請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40426
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 曹恆偉 | |
dc.contributor.author | Mu-Tsung Lai | en |
dc.contributor.author | 賴木聰 | zh_TW |
dc.date.accessioned | 2021-06-14T16:47:19Z | - |
dc.date.available | 2012-08-06 | |
dc.date.copyright | 2008-08-06 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-07-31 | |
dc.identifier.citation | [1] K. Kobayashi et al., “A 2-50 GHz InAlAs/InGaAs-InP HBT Distributed Amplifier,” GaAs IC Symposium, Technical Digest, pp. 207-210, Nov. 1996.
[2] S. Masuda et al., “An Over-110-GHz InP HEMT Flip-Chip Distributed Baseband Amplifier With Inverted Microstripline Structure for Optical Transmission Systems,” IEEE J. Solid-State Circuits, vol. 38, no. 9, pp. 1479-1484, Sept. 2003. [3] J. Carroll et al., “0.25μm pHEMT 40Gb/s E/O Modulator Drivers,” Microwave Symposium Digest , vol. 1, pp. 489-492, June 2002. [4] J. Kim et al, “A 12 dBm 320GHz GBW distributed amplifier in 0.12 _m SOI CMOS,” in IEEE ISSCC Dig. Tech. Papers, Feb. 2004, pp. 478–479. [5]G. R. Aiello and G. D. Rogerson, “Ultra-wideband wireless systems,” IEEE Microwave Mag., vol. 4, pp. 36-47, June 2003. [6] UWB Multi-Band Coalition [Online]. Available: http://www.uwbmultiband.org [7] IEEE 802.15WPAN High Rate Alternative PHY Task Group 3a (TG3a) [Online]. Available: http://www.ieee802.org/15/pub/TG3a.html [8] K. Siwiak, “Ultra-wide band radio: Introducing a new technology,” in Proc. IEEE Vehicular Technology Conf., 2001, pp. 1088–1093. [9] Andrea Bevilacqua, Ali M. Niknejad, 'An ultra-wideband CMOS low noise amplifier for 3.1-10.6-GHz wireless receivers', IEEE Journal of solid-state circuits, Vol. 39, pp.2259-2268, 2004. [10] Y. Mimino, M. Hirata, K. Nakamura, K. Sakamoto, Y. Aoki, and S. Kuroda, “High gain-density K-band P-HEMT LNA MMIC for LMDS and satellite communication,” in IEEE Radio Frequency Integrated Circuits Symp. Dig. Papers, 2000, pp. 209–212. [11] Y. Yun, M. Nishijima, M. Katsuno, H. Ishida, K. Minagawa, T. Nobusada, and T. Tanaka, “A fully integrated broad-band amplifier MMIC employing a novel chip-size package,” IEEE Trans. Microwave Theory Tech., vol. 50, pp. 2930–2937, Dec. 2002. [12] P. Marsh, S. Chu, S. Lardizabal, R. Leoni III, S. Kang, R. Wohlert, A. Bowlby,W. Hoke, R. McTaggart, C. Whelan, P. Lemonias, P. McIntosh, and T. Kazior, “Low noise metamorphic HEMT devices and amplifiers on GaAs substrates,” in IEEE Microwave Theory and Techniques Symp. Dig. Papers, 1999, pp. 105–108. [13] Y. Greshishchev, P. Schvan, J. L. Showell, M.-L. Xu, J. J. Ojha, and J. E. Rogers, “ A fully integrated SiGe receiver IC for 10-Gb/s data rate,” IEEE J. Solid-State Circuits, vol. 35, pp. 1949–1957, Dec. 2000. [14] J. Cao, M. Green, A. Momtaz, K. Vakilian, D. Chung, K.-C. Jen, M. Caresosa, X. Wang, W.-G. Tan, Y. Cai, I. Fujimori, and A. Hairapetian, “OC-192 transmitter and receiver in standard 0.18-_m CMOS,” IEEE J. Solid-State Circuits, vol. 37, pp. 1768–1780, Dec. 2002. [15] H.-T. Ahn and D. J. Allstot, “A 0.5–8.5-GHz fully differential CMOS distributed amplifier,” IEEE J. Solid-State Circuits, vol. 37, pp. 985–993,Aug. 2002. [16] R.-C. Liu, K.-L. Deng, and H.Wang, “ A 0.6–22-GHz broadband CMOS distributed amplifier,” in IEEE Radio Frequency Integrated Circuits Symp. Dig. Papers, 2003, pp. 103–106. [17] B. M. Ballweber, R. Gupta, and D. J. Allstot, “A fully integrated 0.5–5.5-GHz CMOS distributed amplifier,” IEEE J. Solid-State Circuits, vol. 35, pp. 231–239, Feb. 2000. [18] C. F. Liao and S. I. Liu, “A Broadband Noise-Canceling CMOS LNA for 3.1-10.6GHz UWB Receiver,” IEEE Custom Integrated Circuits Conference, pp. 161-164, Sep.2005 [19] Mohan, S.S.; Hershenson, M.D.M.; Boyd, S.P.; Lee, T.H. , “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circuits, vol. 35, pp. 346–355 March 2000 [20] T. H. Lee, “The Design of CMOS Radio-Frequency Integrated Circuits,” Cambridge, U.K.: Cambridge Univ. Press, 1998. [21] J.-C. Chien, L.-H. Lu , “40Gb/s High-Gain Distributed Amplifiers With Cascaded Gain Stages in 0.18μm CMOS,” ISSCC Dig. Tech. Papers, pp. 538-620, Feb.,2007. [22] Vendelin, Pavio and Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques, Second Edition Copyright 2005 John Wiley & Sons, Inc. [23] “Code of federal regulations, title 47-telecommunication, chapter I,” Federal Communications Commission (FCC), pt. 15-Radio Frequency Devices, sections: 15.245, 15.249, 15.515 and 15.521,2004. [24] Chih-Lung Hsiao; Ro-Min Weng; Kun-Yi Lin, “A 0.6V CMOS low noise amplifier for 2.4GHz application” IEEE Asia-Pacific Conf. vol.1, 2004 pp.277-280 [25] P. Andreani, and H. Sjoland,“Noise Optimization of an Inductively Degenerated CMOS Low Noise amplifier” IEEE Transaction on Circuit and Systems-1l:Analog and Digital Signal Processing, Vo1.48, No.9, pp. 835-841. September 2001 [26] Chih-Lung Hsiao; Ro-Min Weng; Kun-Yi Lin“A 1V fully differential CMOS LNA for 2.4GHz application” ISCAS vol.1, 2003 pp.245-248 [27] T. Manku, G. Beck, and E. J. Shin, “A low-voltage design technique for RF integrated circuits,” /EEE Transaction on Circuits and System-11: Analog and Digital Signal Processing, volumn 4, issue IO, pp. 1408-1413, Oct. 1998. [28] A. Worapirhet, M. Chongcheawchamnan, and S. Strisathit, “Broadband Amplifier in CMOS Technology using Cascade Singlestage Distributed Amplifier,” ELECRONICS LETTERS, VOL. 38, NO. 14,4th NLY 2002 [29]B. Razavi, “RF Microelectronics,”Prentice Hall, 1998. [30]G. Gonzalez, “Microwave Transistor Amplifier Analysis and Design,” Prentice Hall, 1997 [31] Riemer, P.J.et al., “Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier”, IEEE MTT-S Int. Microwave Symp. Dig., 12-17 June 2005 4 Page(s):4 pp. [32] Byung-Wook Min; Rebeiz, G.M., “Ka-Band SiGe HBT Low Noise Amplifier Design for Simultaneous Noise and Input Power Matching”, IEEE Microwave and Wireless Components Letter, vol. 17, no. 12, December 2007, pp. 891-893. [33] K. H. Chen and C. K. Wang , “A 3.1-10.6 GHz CMOS cascaded two-stage distributed amplifier for ultra-wideband application,” IEEE Asia-Pacific Conference on AdvancedSystem Integrated Circuits, pp. 296-299, Aug. 2004. [34] C.-P. Chang and H.-R. Chuang, “0.18 m 3-6 GHz CMOS broadband LNA for UWB radio,” Electron. Lett., vol. 41, no. 12, pp. 696–698,Jun. 2005. [35] Moez, K.K.; Elmasry, M.I.,” A 10-GHz 15-dB Four-Stage Distributed Amplifier in 0.18μm CMOS Process” European Solid-State Circuits Conference,vol.1, pp. 535–538,2006. [36] H. Shigematsu, M. Sato, I. Hirose, et al., “40Gb/s CMOS Distributed Amplifier for Fiber-Optic Communication Systems,” ISSCC Dig. Tech. Papers, pp. 476-477,Feb., 2004. [37] J. Kim, J.O. Plouchart, N. Zamdmer, et al., “A 12dBm 320GHz GBW Distributed Amplifier in a 0.12μm SOI CMOS,” ISSCC Dig. Tech. Papers,pp. 478-479, Feb.,2004. [38] R.-C. Liu, T.-P. Wang, L.-H. Lu, et al., “An 80GHz Traveling-Wave Amplifier in a 90nm CMOS Technology,” ISSCC Dig. Tech. Papers, pp. 154-155, Feb., 2005. [39] M.-D. Tsai, H. Wang, J.-F. Kuan, et al., “A 70GHz Cascaded Multi-Stage Distributed Amplifier in 90nm CMOS Technology,” ISSCC Dig. Tech.Papers, pp. 402-403, Feb., 2005. [40] J.-C. Chien, T.-Y. Chen, L.-H. Lu, et al., “A 9.5-dB 50-GHz Matrix Distributed Amplifier in 0.18μm CMOS,” Dig. Symp. VLSI Circuits , pp.146-147, Jun., 2006. [41] K. Moez, M. Elmasry,“ A 10dB 44GHz Loss-Compensated CMOS Distributed Amplifier”ISSCC Dig. Tech. Papers, pp. 548-621, Feb.,2007. [42] S. Masuda et al., “An Over-110-GHz InP HEMT Flip-Chip Distributed Baseban Amplifier with Inverted Microstripline Structure for Optical Transmission Systems,” IEEE J. Solid-State Circuits, vol. 38, no. 9, pp.1479-1484, Sept., 2003. [43] S. Galal, B. Razavi, “40Gb/s Amplifier and ESD Protection Circuit in 0.18μm CMOS Technology,” ISSCC Dig. Tech. Papers, pp. 480-481, Feb.,2004. [44]M. Anowar Masud, et al., “90 nm CMOS MMIC amplifier,” IEEE Radio Frequency Integrated Circuits Symp. Dig. Papers, 2004, pp. 971–974. [45] M.A.T. Sanduleanu, et al., “31-34GHz Low Noise Amplifier with On-chip Microstrip Lines and Inter-stage Matching in 90-nm Baseline COMS,” | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40426 | - |
dc.description.abstract | 於信號接收路徑上,低雜訊放大器是系統前端中相當重要的零組件。因為訊號經由天線進來之後,立即進入低雜訊放大器來放大,所以它決定了整個系統的雜訊指數以及輸入電壓駐波比。而寬頻放大器亦有廣泛應用,如在高速的光纖通訊系統中做為寬頻放大器,感測器、微波及毫米波通訊系統或是一個寬頻結構中當作是一個放大單元來使用。分散式放大器正是一個適合於上述應用的結構,它具有相當大的增益頻寬乘積,以及很低的輸入輸出反射損耗。
本論文內容可分為三大主題,分別為超寬頻無線通訊系統和寬頻技術的原理介紹、利用標準互補式金氧半導體製程來實現K頻段之低雜訊放大器以及利用分散式的架構來實現寬頻放大器。 基本原理部分,分別介紹了超寬頻無線通訊和寬頻技術的概念,及電路所須要的規格。 之後,會先介紹一個新穎類似摺疊疊接架構的K頻段之低雜訊放大器。在34.76GHz時量測得到的增益為12.4dB,功率消耗為74.8mW。 第三個部分為,利用分散式的結構來實現寬頻放大器。論文中一共提出兩個使用標準互補式金氧半導體製程之分散式放大器。其中之一採用類似摺疊疊接架構做為增益級,其量測得到的頻寬為3.2~6.57GHz,增益為12.6dB。另外一個設計則應用了增益提升的技巧,模擬結果具有23dB的增益,41.7GHz的頻寬且消耗136mW。 | zh_TW |
dc.description.abstract | In the receiving path, low noise amplifier (LNA) is a very important building block at the front end of the communication system. Because the received signal is amplified through LNA, which is behind the antenna, it dominates the noise figure (NF) and input voltage standing-wave ratio (VSWR) of the overall system. On the other hand, wideband amplifiers are widely used in high-speed optical communication systems, microwave/millimeter-wave communications, sensor systems, or wideband instruments. Distributed amplifiers (DA) provide very high gain-bandwidth products, together with lower input and output return losses for broadband applications.
This thesis is divided into three parts. First, some fundamental concepts of UWB wireless communication systems and wideband circuit techniques are introduced. Second, the design and performance of a K-band LNA using standard CMOS process is presented. Finally, two distributed amplifiers are described. Some important fundamental theories of UWB wireless communication and wideband circuit techniques are reviewed. Some essential circuit performance specifications are also introduced. Also presented in this thesis is the design of a K-band LNA using a modified folded cascade structure that achieved a measured gain of 12.4 dB at 34.76 GHz with associated power consumption of 74.8mW. Finally, two broadband amplifiers are implemented using distributed circuit techniques. A 3.2~6.57 GHz DA architecture with a modified folded cascade gain stage achieves a measured gain of 12.6 dB. Another DA with gain-enhancement in its gain stage achieves a simulated 23 dB gain with a bandwidth of 41.7 GHz bandwidth and power consumption of 136 mW. | en |
dc.description.provenance | Made available in DSpace on 2021-06-14T16:47:19Z (GMT). No. of bitstreams: 1 ntu-97-R95943115-1.pdf: 3043658 bytes, checksum: 4324250de9f16e2b30ee5431b5e1bf36 (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 摘要 Ⅰ
Abstract Ⅲ 目錄 Ⅴ 圖目錄 Ⅷ 表目錄 XII 第一章 概論 1 1.1研究動機 2 1.2設計挑戰 2 1.3論文概要 4 第二章 背景與基本理論 7 2.1超寬頻無線通訊之介紹 7 2.2頻寬提升技巧 12 2.2.1負回授式 12 2.2.2Inductive Peaking 14 2.2.3分佈式電路 18 2.3高頻設計的基本概念 23 2.3.1非線性的影響 23 2.3.2穩定度 28 2.3.3雜訊指數 30 第三章 K-band低雜訊放大器 33 3.1介紹 33 3.2K-band低雜訊放大器 34 3.2.1電感源極退化 35 3.2.2LC諧振 37 3.2.3類似摺疊式疊接結構 38 3.2.4串接增益級 40 3.3模擬結果 41 3.4量測結果 45 第四章 多級串接式分佈式放大器 51 4.1介紹 51 4.2超寬頻之分佈式放大器 53 4.2.1類似摺疊疊接增益級 53 4.2.2雙級串接式分佈式放大器 55 4.2.3模擬結果 57 4.2.4量測結果 61 4.3 40GHz分佈式放大器 66 4.3.1增益提升技巧 66 4.3.2模擬結果 69 第五章 總結 75 5.0結果與討論 75 5.1未來展望 76 | |
dc.language.iso | zh-TW | |
dc.title | 低雜訊放大器與分散式放大器之設計與實作 | zh_TW |
dc.title | Design and Implementation of Low Noise Amplifiers and Distributed Amplifiers | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林宗賢,瞿大雄,陳淳杰 | |
dc.subject.keyword | 低雜訊放大器,超寬頻,分散式放大器,增益提升技巧, | zh_TW |
dc.subject.keyword | Low noise amplifier,ultra-wideband,distributed amplifier,gain-enhancement technique, | en |
dc.relation.page | 82 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-07-31 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-97-1.pdf 目前未授權公開取用 | 2.97 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。