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DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 舒貽忠 | |
dc.contributor.author | Cheng-Chin Chuang | en |
dc.contributor.author | 莊政縉 | zh_TW |
dc.date.accessioned | 2021-06-14T16:43:43Z | - |
dc.date.available | 2010-08-08 | |
dc.date.copyright | 2008-08-08 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-07-30 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/40268 | - |
dc.description.abstract | 本論文主要著重壓電振動能量擷取之研究,利用壓電材料特有力電耦合特性,吸收外界振動能量轉化為電能,再透過能量擷取電路將其儲存。而物理模型之建立涵蓋了力學以及電學理論為基礎,且描述彼此之間相互轉換的特性。
在能量擷取電路上,區分兩種不同介面電路加以討論。一為傳統普及的標準電路,另一為SSHI的新式電路,並分別在兩種不同力電耦合係數材料下加以討論。在標準電路介面下,中力電耦合係數材料透過電致阻尼效應可發現輸出功率僅具有單一峰值,而強力電耦合係數材料則會有兩個最佳功率輸出。然而,不論是中或強力電耦合係數材料,在SSHI電路下均只有單一峰值。除此之外,在該電路下通過最佳功率點後,持續加大系統阻抗,則兩種不同力電耦合係數材料於頻率偏移之情況下,均會發生功率衰減趨緩的現象,但此效果在強力電耦合係數材料下則較差強人意。因此,考慮外界給予激振頻率偏移共振之前提下,為求輸出功率維持穩定的特質,使用SSHI電路會較標準電路合適,尤其在中力電耦合係數材料效果更加顯著。 實驗上,受到二極體耗能效應的限制,在標準電路下之短路共振點無法被實際應用,同樣,在SSHI電路亦會因此而受到影響,有鑑於此,本文乃透過實驗方式,觀察出加速度的增加對於克服此耗能效應有相關的幫助。最後,本文亦提供了壓電串並聯的方式以提高整體輸出功率。 | zh_TW |
dc.description.abstract | This thesis studies energy harvesting using piezoelectric elements as energy transducer materials. The ambient vibration energy is transmitted into electrical energy via electromechanical coupling. The harvested energy is further stored by choosing suitable energy harvesting circuits. Here we propose an appropriate physical model accounting for the effect of electronic interfaces on the harvested power output.
We analyze the behavior of energy harvesting system for two different electronic circuits. One is the standard interface and the other is the relatively new interface called SSHI (synchronized switch harvesting on inductor). In each circuit, two different magnitudes of electromechanical coupling piezoelectric materials are adopted and studied. In the case of standard interface, it is found that there is only a single peak for optimal power when the coupling effect is in the medium range. On the other hand, there is a pair of optimal power for the case of strongly coupled electromechanical system. Further, it is found that there is always a single peak of power in the case of SSHI system. In this case, the output power drops significantly when the applied frequency deviates from the resonance, in particular, in the case of strongly coupled materials. Therefore, the desired output power for the SSHI system is in the case of mid-range of electromechanical coupling. The effect of diode loss is also studied here via experiment. This effect is significant when the applied frequency is close to the short circuit resonance in both cases of standard and SSHI interfaces. One approach to overcome it is to increase the magnitude of applied acceleration. Finally, the piezoelectric elements in series and parallel forms are proposed to enhance the output power. | en |
dc.description.provenance | Made available in DSpace on 2021-06-14T16:43:43Z (GMT). No. of bitstreams: 1 ntu-97-R95543016-1.pdf: 4013643 bytes, checksum: 752cc6270700a20291a1843629d53002 (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 誌謝 i
摘要 iii Abstract iv 目錄 v 圖目錄 vii 表目錄 xiii 第一章 序論 1 1.1研究動機 1 1.2文獻回顧 2 第二章 壓電理論簡介 5 2.1壓電原理概述 5 2.2壓電材料本構方程式 6 第三章 壓電能量擷取器理論模型建立與電路分析 9 3.1統御方程式之推導 9 3.2壓電樑之等效電路模型建立 19 3.3標準電路介面型式 22 3.4 SSHI電路介面型式 29 第四章 實驗與結果討論 37 4.1實驗器材與架構 37 4.2實驗材料與等效參數之量測 40 4.3 SSHI電路設計 44 4.4頻率響應 50 4.5標準電路介面下實驗結果與分析 53 4.6 SSHI電路介面下實驗結果與分析 71 4.7加速度效應與壓電材料之分析討論 89 4.8壓電在串聯形式以及並聯形式之分析討論 92 第五章 結論與未來展望 103 5.1結論 103 5.2未來展望 105 參考文獻 106 圖目錄 圖2-1 正壓電效應示意圖……………………………………………………………5 圖2-2 逆壓電效應示意圖……………………………………………………………5 圖3-1 {3-1}型式壓電材料示意圖…………………………………………………9 圖3-2 壓電樑位移配置圖…………………………………………………………10 圖3-3 壓電樑幾何參數定義圖……………………………………………………10 圖3-4 壓電樑自由體圖……………………………………………………………11 圖3-5 壓電樑斷面內應力示意圖…………………………………………………13 圖3-6 壓電樑邊界條件定義圖……………………………………………………15 圖3-7 壓電簡易等效電路模型示意圖……………………………………………19 圖3-8 壓電完整等效電路模型示意圖(1)…………………………………………20 圖3-9 壓電完整等效電路模型示意圖(2)…………………………………………21 圖3-10 壓電樑在標準電路示意圖…………………………………………………22 圖3-11 標準電路下自由端相對位移與寄生電容電壓值示意圖…………………24 圖3-12 壓電樑在SSHI電路示意圖………………………………………………29 圖3-13 SSHI電路下自由端相對位移與寄生電容電壓值示意圖………………30 圖3-14 開關關上之振盪電路示意圖………………………………………………31 圖4-1 振盪機………………………………………………………………………37 圖4-2 訊號產生器…………………………………………………………………37 圖4-3 光纖測距儀…………………………………………………………………37 圖4-4 阻抗分析儀…………………………………………………………………38 圖4-5 示波器………………………………………………………………………38 圖4-6 加速度規……………………………………………………………………38 圖4-7 實驗架構示意圖……………………………………………………………39 圖4-8 TKB型壓電材料及其幾何尺寸示意圖……………………………………40 圖4-9 QA型壓電材料及其幾何尺寸示意圖……………………………………40 圖4-10 阻抗分析儀之等效電路示意圖……………………………………………41 圖4-11 高通濾波之頻率響應增益與相角圖………………………………………44 圖4-12 位移與相位平移訊號相角相差 示意圖………………………………45 圖4-13 位移與相位平移訊號透過極限放大器示意圖……………………………45 圖4-14 XOR數位邏輯閘真值表…………………………………………………46 圖4-15 位移與觸發訊號示意圖……………………………………………………46 圖4-16 555IC單穩態電路示意圖…………………………………………………47 圖4-17 位移與輸出訊號示意圖……………………………………………………48 圖4-18 NMOS簡易示意圖………………………………………………………48 圖4-19 位移與壓電寄生電容電壓示意圖…………………………………………49 圖4-20 壓電樑等效電路理論模型…………………………………………………50 圖4-21 (a)TKB/(b)QA型壓電材料之位移頻率響應……………………………51 圖4-22 壓電樑通過全橋整流之理論模型示意圖…………………………………51 圖4-23 壓電樑在標準電路下之理論模型示意圖…………………………………53 圖4-24 (a)、(b)分別為TKB型壓電材料在標準電路下外加等效阻抗9.9kohm之位移與輸出電壓頻率響應理論與實驗結果………………………………54 圖4-25 (a)、(b)分別為TKB型壓電材料在標準電路下外加等效阻抗26kohm之位移與輸出電壓頻率響應理論與實驗結果………………………………54 圖4-26 (a)、(b)分別為TKB型壓電材料在標準電路下外加等效阻抗48kohm之位移與輸出電壓頻率響應理論與實驗結果………………………………55 圖4-27 (a)、(b)分別為TKB型壓電材料在標準電路下外加等效阻抗107kohm之位移與輸出電壓頻率響應理論與實驗結果……………………………55 圖4-28 (a)、(b)分別為TKB型壓電材料在標準電路下外加等效阻抗212kohm之位移與輸出電壓頻率響應理論與實驗結果……………………………56 圖4-29 (a)、(b)分別為TKB型壓電材料在標準電路下外加等效阻抗500kohm之位移與輸出電壓頻率響應理論與實驗結果……………………………56 圖4-30 (a)、(b)分別為TKB型壓電材料在標準電路下外加等效阻抗1Mohm 之位移與輸出電壓頻率響應理論與實驗結果………………………………57 圖4-31 TKB型壓電材料在標準電路之理論位移頻率響應圖…………………58 圖4-32 TKB型壓電材料在標準電路之實驗位移頻率響應圖…………………58 圖4-33 TKB型壓電材料在標準電路之理論輸出電壓頻率響應圖……………59 圖4-34 TKB型壓電材料在標準電路之實驗輸出電壓頻率響應圖……………59 圖4-35 TKB型壓電材料在標準電路之理論輸出功率頻率響應圖……………60 圖4-36 TKB型壓電材料在標準電路之實驗輸出功率頻率響應圖……………60 圖4-37 (a)、(b)分別為QA型壓電材料在標準電路下外加等效阻抗9.9kohm之位移與輸出電壓頻率響應理論與實驗結果………………………………61 圖4-38 (a)、(b)分別為QA型壓電材料在標準電路下外加等效阻抗26kohm之位移與輸出電壓頻率響應理論與實驗結果…………………………………62 圖4-39 (a)、(b)分別為QA型壓電材料在標準電路下外加等效阻抗48kohm之位移與輸出電壓頻率響應理論與實驗結果…………………………………62 圖4-40 (a)、(b)分別為QA型壓電材料在標準電路下外加等效阻抗107kohm之位移與輸出電壓頻率響應理論與實驗結果………………………………63 圖4-41 (a)、(b)分別為QA型壓電材料在標準電路下外加等效阻抗212kohm之位移與輸出電壓頻率響應理論與實驗結果………………………………63 圖4-42 (a)、(b)分別為QA型壓電材料在標準電路下外加等效阻抗500kohm之位移與輸出電壓頻率響應理論與實驗結果………………………………64 圖4-43 (a)、(b)分別為QA型壓電材料在標準電路下外加等效阻抗1Mohm 之位移與輸出電壓頻率響應理論與實驗結果…………………………………64 圖4-44 QA型壓電材料在標準電路之理論位移頻率響應圖……………………66 圖4-45 QA型壓電材料在標準電路之實驗位移頻率響應圖……………………66 圖4-46 QA型壓電材料在標準電路之理論輸出電壓頻率響應圖………………67 圖4-47 QA型壓電材料在標準電路之實驗輸出電壓頻率響應圖………………67 圖4-48 QA型壓電材料在標準電路之理論輸出功率頻率響應圖………………68 圖4-49 QA型壓電材料在標準電路之實驗輸出功率頻率響應圖………………68 圖4-50 (a)TKB型壓電材料/(b) QA型壓電材料在標準電路下外加阻抗與電致阻尼比關係圖………………………………………………70 圖4-50 (c)TKB型壓電材料/(d) QA型壓電材料在標準電路下之理論輸出功率頻率響應圖…………………………………………………70 圖4-51 壓電樑在SSHI電路下之理論模型示意圖……………………71 圖4-52 (a)、(b)分別為TKB型壓電材料在SSHI電路下外加等效阻抗9.9kohm之位移與輸出電壓頻率響應理論與實驗結果………………72 圖4-53 (a)、(b)分別為TKB型壓電材料在SSHI電路下外加等效阻抗26kohm之位移與輸出電壓頻率響應理論與實驗結果………………72 圖4-54 (a)、(b)分別為TKB型壓電材料在SSHI電路下外加等效阻抗48kohm之位移與輸出電壓頻率響應理論與實驗結果………………73 圖4-55 (a)、(b)分別為TKB型壓電材料在SSHI電路下外加等效阻抗107kohm之位移與輸出電壓頻率響應理論與實驗結果………………73 圖4-56 (a)、(b)分別為TKB型壓電材料在SSHI電路下外加等效阻抗212kohm之位移與輸出電壓頻率響應理論與實驗結果………………74 圖4-57 (a)、(b)分別為TKB型壓電材料在SSHI電路下外加等效阻抗500kohm之位移與輸出電壓頻率響應理論與實驗結果………………74 圖4-58 (a)、(b)分別為TKB型壓電材料在SSHI電路下外加等效阻抗1Mohm 之位移與輸出電壓頻率響應理論與實驗結果………………75 圖4-60 TKB型壓電材料在SSHI電路之理論位移頻率響應圖………76 圖4-61 TKB型壓電材料在SSHI電路之實驗位移頻率響應圖………76 圖4-62 TKB型壓電材料在SSHI電路之理論輸出電壓頻率響應圖…77 圖4-63 TKB型壓電材料在SSHI電路之實驗輸出電壓頻率響應圖…77 圖4-64 TKB型壓電材料在SSHI電路之理論輸出功率頻率響應圖…78 圖4-65 TKB型壓電材料在SSHI電路之實驗輸出功率頻率響應圖…78 圖4-66 (a)、(b)分別為QA型壓電材料在SSHI電路下外加等效阻抗9.9kohm 之位移與輸出電壓頻率響應理論與實驗結果……………80 圖4-67 (a)、(b)分別為QA型壓電材料在SSHI電路下外加等效阻抗26kohm 之位移與輸出電壓頻率響應理論與實驗結果………………80 圖4-68 (a)、(b)分別為QA型壓電材料在SSHI電路下外加等效阻抗48kohm 之位移與輸出電壓頻率響應理論與實驗結果………………81 圖4-69 (a)、(b)分別為QA型壓電材料在SSHI電路下外加等效阻抗107kohm 之位移與輸出電壓頻率響應理論與實驗結果……………81 圖4-70 QA型壓電材料在SSHI電路下外加等效阻抗9.9kohm之輸出電壓理論、實驗與模擬結果圖………………………………………82 圖4-71 QA型壓電材料在SSHI電路之理論位移頻率響應圖…………83 圖4-72 QA型壓電材料在SSHI電路之實驗位移頻率響應圖…………83 圖4-73 QA型壓電材料在SSHI電路之理論輸出電壓頻率響應圖……84 圖4-74 QA型壓電材料在SSHI電路之實驗輸出電壓頻率響應圖……84 圖4-75 QA型壓電材料在SSHI電路之理論輸出功率頻率響應圖……85 圖4-76 QA型壓電材料在SSHI電路之實驗輸出功率頻率響應圖……85 圖4-77 (a)TKB型壓電材料/(b) QA型壓電材料在SSHI電路下外加阻抗與電致阻尼比關係圖………………………………………………87 圖4-77 (c)TKB型壓電材料/(d) QA型壓電材料在SSHI電路下之理論輸出功率頻率響應圖…………………………………………………87 圖4-78 TKB型壓電材料輸出功率在SSHI電路與標準電路之比較圖…88 圖4-79 (a)加速度1.5 /(b)加速度2.2 在標準電路下外加等效阻抗 26kohm之輸出電壓頻率響應…………………………………………89 圖4-79 (c)加速度3 在標準電路下外加等效阻抗26kohm之輸出電壓頻率響應…………………………………90 圖4-80 雙片壓電等效電路於串聯下之模組…………………………92 圖4-81 單片壓電等效電路圖…………………………………………92 圖4-82 雙片壓電於串聯情形下之等效電路模型……………………94 圖4-83 雙片壓電等效電路於並聯下之模組…………………………94 圖4-84 雙片壓電於並聯情形下之等效電路模型……………………95 圖4-85 (a)雙片壓電於串聯下等效電路/(b)雙片壓電於並聯下等效電路………96 圖4-86 (a)雙片壓電掛載固定阻抗串聯實驗結果/(b)雙片壓電串聯實驗結果與理論比較…………………………………………………97 圖4-87 雙片壓電串聯以及並聯輸出功率…………………………98 表目錄 表2-1 IEEE標準下標對應表……………………………………………………….7 表4-1 TKB/QA型壓電材料之相關係數表………………………………………43 表4-2 單片壓電等效參數及雙片壓電串並聯等效參數表………………………99 | |
dc.language.iso | zh-TW | |
dc.title | 壓電振動能量擷取器在標準介面與SSHI介面之分析 | zh_TW |
dc.title | The Analysis of Piezo Vibration Energy Harvester in Standard Interface and SSHI Interface | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃世欽,陳俊杉 | |
dc.subject.keyword | 壓電振動能量擷取,壓電材料,能量擷取電路, | zh_TW |
dc.subject.keyword | piezoelectric vibration energy harvesting,piezoelectric materials,energy harvesting circuits, | en |
dc.relation.page | 110 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-08-01 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 應用力學研究所 | zh_TW |
顯示於系所單位: | 應用力學研究所 |
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