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  1. NTU Theses and Dissertations Repository
  2. 理學院
  3. 應用物理研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/39373
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor陳永芳
dc.contributor.authorJyong-Kuen Lianen
dc.contributor.author連炯堃zh_TW
dc.date.accessioned2021-06-13T17:27:03Z-
dc.date.available2021-07-13
dc.date.copyright2011-07-26
dc.date.issued2011
dc.date.submitted2011-07-13
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dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/39373-
dc.description.abstract在本論文中,我們討論兩種半導體複合材料的光學及壓電性質:氮化銦鎵/氮化鎵多重量子井、氧化鋅奈米柱。我們利用氧化鋅的壓電特性,當氧化鋅奈米柱在感測器表面產生形變時,其電偶極會影響氮化銦鎵/氮化鎵多層量子井的內電場,而因為量子侷限史塔克效應的關係,量子井的光致螢光光譜、拉曼散射光譜會有所改變。這些現象代表著氧化鋅與氮化銦鎵/氮化鎵多層量子井複合材料可開發成壓力感知器的可能性。zh_TW
dc.description.abstractIn this thesis, we will study a novel semiconductor composite consisting of InGaN/GaN multiple quantum well (MQW) and zinc oxide nanorods, we have found some interesting phenomena. Relying on the piezoelectric-potential created in zinc oxide under strain, which will alter the electric field in MQWs. It will induce the change of photoluminescence spectra and Raman spectra could be changed due to the quantum confined Stark effect. As a result, the composite consisting of InGaN/GaN MQWs and ZnO nanorods has a great opportunity in the development of pressure detectors or strain sensors.en
dc.description.provenanceMade available in DSpace on 2021-06-13T17:27:03Z (GMT). No. of bitstreams: 1
ntu-100-R98245012-1.pdf: 4542201 bytes, checksum: 0029f0c2cedf89ec6cf49bdc3ba5dd8d (MD5)
Previous issue date: 2011
en
dc.description.tableofcontents致謝…………….………………………………………………………………… I
摘要…………….………………………………………………………………… II
Abstract…………………………………………………………………………. . III
Contents………………………………………………………………………….. IV
Figure captions…………………………………………………………………... VI
1. Introduction…………………………………………………………………. 1
References……………………………………………………………………. 3
2. Theoretical background…………………………………………………….. 4
2.1 Growth methods ………….……….……………………………………... 4
2.1.1 Metal-organic vapor phase epitaxy……………………………..... 4
2.1.2 Vapor-liquid-solid growth……………………………………....... 8
2.1.3 DC sputtering deposition…………………………………………. 10
2.2 Photoluminescence……………………………………………………….. 11
2.3 Scanning electron microscopy…………………………………………..... 17
2.4 Raman scattering…………………………………………………………. 22
References………………………………………………………………… 29
3. Optical detection of strain induced effects in ZnO-nanorods-decorated
InGaN/GaN multiple quantum wells……………………………………… 30
3.1 Introduction……………………………………………………………… 30
3.2 Experiment……………………………………………………………..... 31
3.3 Results and discussion……………………………………………..…..... 34
3.4 Summary………………………………………………………………… 38
References………………………………………………………………. 47
4. Conclusion………………………………………………………………….. 49
dc.language.isoen
dc.subject氮化鎵zh_TW
dc.subject壓電效應zh_TW
dc.subject氧化鋅zh_TW
dc.subject奈米柱zh_TW
dc.subject多層量子井zh_TW
dc.subject氮化銦鎵zh_TW
dc.subjectnanorodsen
dc.subjectGaNen
dc.subjectInGaNen
dc.subjectmultiple quantum wellen
dc.subjectpiezoelectricen
dc.subjectpiezotronicen
dc.subjectZnOen
dc.title奈米壓電材料之研究與應用:
氧化鋅奈米柱與氮化銦鎵/氮化鎵多重量子井
zh_TW
dc.titleStudy and application of nano-piezoelectric materials:
ZnO nanorods and InGaN/GaN multiple quantum wells
en
dc.typeThesis
dc.date.schoolyear99-2
dc.description.degree碩士
dc.contributor.oralexamcommittee林泰源,梁啟德
dc.subject.keyword壓電效應,氧化鋅,奈米柱,多層量子井,氮化銦鎵,氮化鎵,zh_TW
dc.subject.keywordpiezoelectric,piezotronic,ZnO,nanorods,multiple quantum well,InGaN,GaN,en
dc.relation.page49
dc.rights.note有償授權
dc.date.accepted2011-07-13
dc.contributor.author-college理學院zh_TW
dc.contributor.author-dept應用物理所zh_TW
顯示於系所單位:應用物理研究所

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