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標題: | 低功率互補式金氧半射頻前端發射器之研製 Design and Implementation of a Low Power CMOS RF Transmitter Front-end |
作者: | Ping-Hsi Hung 洪秉熙 |
指導教授: | 呂良鴻 |
關鍵字: | 金氧半,低功率,發射器,射頻, Transmitter,CMOS,low power,RF, |
出版年 : | 2005 |
學位: | 碩士 |
摘要: | 近年來無線通訊市場的快速成長促進了全世界相關領域的研究和發展,在單晶片上實現低成本高效能的無線通訊積體電路是一大趨勢。一個完整的無線通訊系統主要是由射頻(Radio Frequency, RF),中頻(Intermediate Frequency, IF)以及基頻(Base band, BB)所組成。由於技術上的限制以及系統上的需求,這些晶片被分別使用了不同的製程來設計。在無線通訊系統的研發上,即使可以在各個晶片的設計分別取得最佳的效能,但在改善成本、良率、功率損耗以及整體系統的效能(System performance)上仍然有許多的挑戰。
如今,先進的技術使得射頻電路能夠在低成本的CMOS製程上實現。因此將射頻前端(RF front-end)電路與基頻電路整合在一個單晶片上的方式成為無線通訊設計領域的主流。如此一來,可以大幅地降低成本以及有效地縮短研發週期。 在本論文中。我們實現了一個應用於5GHz頻段使用二極體線性化技術的低功率發射端放大器以及一個超低功率射頻發射器。我們所採用的製程為CIC所提供的TSMC 0.18um RFCMOS process。在二極體線性化技術的低功率發射端放大器中我們採用NMOS電晶體來實現二極體的線性器,此種方試可以有效地提升放大器的線性度而不增加額外的晶片面積。在1V的電源供應,5.1mW的靜態功率損耗之下,低功率發射端放大器可以達到4.9dBm的輸出功率以及29%的功率增加效率。另一方面,在超低功率射頻發射器的線路設計上。我們提出了一個創新的直接轉頻發射器架構,它採用了一個創新的雙端轉單端的轉換器,此種架構的雙端轉單端的轉換器提供了絕佳的增益及相位的平衡,且僅需要極低的功率損耗。在0.6V的電源供應,5.6mW的靜態功率損耗之下,超低功率射頻發射器可以達到-1.5dBm的輸出功率以及11.4dBm的轉換增益。兩顆晶片的面積分別為1×0.845 mm2 (低功率發射端放大器)和1.09×1.09 mm2(超低功率射頻發射器)。 Recently, the fast-growing market of wireless communication has motivated research and development on related topics all over the world. The current trend of wireless technology focuses on low-cost and high-performance integrated circuits. Typically, a complete wireless communication system can be divided into radio-frequency (RF) front-end, intermediate frequency (IF) module and base-band transceiver. Due to the technology limitation and required system specifications, these modules are normally designed and fabricated in different process technologies. Though the performance of individual modules can be optimized in a multi-chip solution, the issues such as yield, power dissipation and overall system performance have long impeded the development of high-volume and low-cost wireless communication systems. Fortunately, the possibility of implementing RF circuits using sub-micron CMOS process has been demonstrated with recent advances in semiconductor technology. Integration of RF front-end and base-band digital circuits in a single chip becomes the mainstream of wireless communication industry. In this thesis, a low-power transmitter amplifier with diode linearizer for 5-GHz short-range wireless applications and an ultra-low power transmitter front-end are presented. The integrated NMOS diode which serves as the function of diode linearizer effectively improves the linearity of the fabricated transmitter amplifier with insignificant increase in chip area. It exhibits an output power of 4.9dBm and a PAE 29% with a power dissipation of 5.1mW at quiescent condition under a 1-V power supply. As for the proposed direct-conversion transmitter (DCT), a novel differential to single-ended converter with driver amplifier (D2S-converter with DA) is introduced, exhibiting an excellent performance on the gain balance and the phase balance. The designed transmitter front-end demonstrates an output power of -1.5dBm @P1dB and conversion gain of 11.4dB, while consuming a dc power of 5.6mW from an ultra-low supply voltage of 0.6 V. The die sizes of two prototypes are 1×0.845 mm2 and 1.09×1.09 mm2, respectively. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/39264 |
全文授權: | 有償授權 |
顯示於系所單位: | 電子工程學研究所 |
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