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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳永芳(Yang-Fang Chen) | |
| dc.contributor.author | Kuo-Yu Chen | en |
| dc.contributor.author | 陳國裕 | zh_TW |
| dc.date.accessioned | 2021-06-13T15:32:52Z | - |
| dc.date.available | 2008-07-16 | |
| dc.date.copyright | 2008-07-16 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-14 | |
| dc.identifier.citation | chapter.1
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/37563 | - |
| dc.description.abstract | 在本文中, 首先利用不同厚度金屬蒸鍍在MOCVD法長在C平面的氮化銦鎵/氮化鎵(InGaN/GaN)的多層量子井以便研究光致螢光的強度改變, 其理論涉及到表面電漿子共振現象. 再者我們探討氮化銦鎵/氮化鎵(InGaN/GaN)的多層量子井及蒸鍍在其上的金屬層對沉積在表面上之硒化鎘/硫化鋅(CdSe/ZnS)的發光特性改變, 其涉及能量轉移(FRET)和表面電漿子共振現象之合併效應. 我們發現 CdSe/ZnS量子點之發光能被增強四倍. 因此本研究提供了一個可以增強光學元件發光及發展高效率光學元件的方法, 對日後之應用會很有幫助. | zh_TW |
| dc.description.abstract | By combining InGaN/GaN (MQWs) multiple quantum wells with different thickness of metal films, we have investigated the change of optical properties of CdSe/ZnS quantum dots. It is found that the photoluminescence intensity of CdSe/ZnS quantum dots can be enhanced by up to 4 times. The underlying mechanism arises from the combined effect of Förster resonance energy transfer and surface plasmon resonance. Our result is useful for the creation of highly efficient solid state emitters. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T15:32:52Z (GMT). No. of bitstreams: 1 ntu-97-R95222064-1.pdf: 3327090 bytes, checksum: 5b0b1db33f63721f5131968e72c91f6e (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 1. Introduction: ……………………………………………………………………….1
1.1 References............................................3 2. Theoretical background: ……………………………………………………...........4 2.1: Band gap structure………………………………………………………………4 2.2: Photoluminescence excitation spectrum (PLE)…………………………………7 2.3: Surface plasmon resonance (SPR)………………………………………………9 2.4: Time-domain lifetime…………………………………………………………..12 2.4.1: Introduction…………………………………………………………………12 2.4.2: Time Resolved PL Apparatus………………………………………………12 2.5: Förster energy transfer (FRET)………………………………………………...15 2.5.1: Introduction…………………………………………………………………15 2.5.2: Basic requirements of FRET………………………………………………..15 2.6: Recombination processes………………………………………………………17 2.7: Quantum confinement effect…………………………………………………...20 2.8:References..........................................22 3. Experimental setup………………………………………………………………...23 3.1: Photoluminescence Apparatus…………………………………………………23 3.2: Measurement in Photoluminescence Excitation……………………………….24 3.3: Scanning Electron Microscopy………………………………………………...25 4. Results and discussion……………………………………………………………..31 4.1: Enhancement of bandgap emission of InGaN/GaN multiple quantum wells by surface plasmon resonance……………………………..…….…….36 4.2: Enhancement of bandgap emission of CdSe/ZnS quantum dots by the combination of Förster energy transfer and surface plasmon resonance……………………………………………..................................................40 4.3:References..........................................46 5. Conclusion…………………………………………………………………………48 | |
| dc.language.iso | zh-TW | |
| dc.subject | 能量轉移 | zh_TW |
| dc.subject | 表面電漿子共振現象 | zh_TW |
| dc.subject | 氮化銦鎵/氮化鎵 | zh_TW |
| dc.subject | InGaN/GaN | en |
| dc.subject | F&ouml | en |
| dc.subject | rster resonance energy transfer | en |
| dc.subject | surface plasmon resonance | en |
| dc.title | 奈米尺度氮化銦鎵/氮化鎵多層量子井及金屬薄層增強硒化鎘/硫化鋅量子點光學特性之研究 | zh_TW |
| dc.title | Enhanced optical properties of CdSe/ZnS nanoparticles by using InGaN/GaN Multiple Quantum Wells and metal films | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張顏暉(Yuan-Huei Chang),沈志霖(Ji-Lin Shen) | |
| dc.subject.keyword | 能量轉移,表面電漿子共振現象,氮化銦鎵/氮化鎵, | zh_TW |
| dc.subject.keyword | F&ouml,rster resonance energy transfer,surface plasmon resonance,InGaN/GaN, | en |
| dc.relation.page | 48 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2008-07-14 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
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