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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36891完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳宜良 | |
| dc.contributor.author | Jui-Peng Chang | en |
| dc.contributor.author | 張濬朋 | zh_TW |
| dc.date.accessioned | 2021-06-13T08:21:15Z | - |
| dc.date.available | 2005-07-27 | |
| dc.date.copyright | 2005-07-27 | |
| dc.date.issued | 2005 | |
| dc.date.submitted | 2005-07-19 | |
| dc.identifier.citation | [1] R. Pinnau
A note on boundary conditions for quantum hydrodynamic models Appl. Math. Lett. , 12 : p77 ~ p82 (1999) [2] R. Pinnau Numerical approximation of the transient quantum drift diffusion model Submitted for publication (2000) [3] R. Pinnau and A. Unterreiter The stationary current-voltage characteristics of the quantum drift diffusion model SIAM J. Num. Anal. , 37 : p211 ~ p245 (1999) [4] R. Pinnau and A. Jüngel Global non-negative solutions of a nonlinear fourth order parabolic equation for quantum systems SIAM J. Math. Anal. , 32 : p760 ~ p777 (2000) [5] R. Pinnau and A. Jüngel Convergent semidiscretization of a nonlinear fourth order parabolic system Submitted for publication (2001) [6] P.A Markowich, Ch. Ringhofer, and C. Schmeier Semiconductor Equations Springer (1990) [7] C. L. Gardner The quantum hydrodynamic model for semiconductor devices SIAM J. Appl. Math. , 54 : p409 ~ p427 (1994) [8] C. L. Gardner and Ch. Ringhofer The smooth quantum potential for the hydrodynamic model Phy. Rev (E), 53 : p157 ~ p167 (1996) [9] I. Gasser and P.A. Markowich Quantum hydrodynamics, Wigner transforms and the classical limit Asympt. Anal. , 14 : p97 ~ p116 (1997) [10] M.G Ancona and G.J. Irfrate Quantum correction of the equation of state of an electron gas in semiconductor Phy. Rev (B), 39 : p9536 ~ p9540 (1989) [11] J. Simon. Compact sets in the space Ann. Math. Pura Appl. , 146 : p65 ~ p96 (1987) [12] H.Abebe E. Cumberbatch Quantum mechanical effects correction models for inversion charge and current – voltage (I-V) characteristics of the MOSFET device The 2003 Nanotech Conference Proceeding [13] M.G Ancona Density – Gradient simulations of quantum effects in ultra thin oxide MOS structures IEEE Proceedings. Simulation of semiconductor Process and Devices,International Conference, SISPAD 97 pp97-100, 1997 [14] P.A. Markowich The stationary semiconductor device equations Springer Verlag, Vienna 1990 [15] A. Jüngel Quasi-hydrodynamic Semiconductor Equations Birkhäuser. PNLDE 41. 2001 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36891 | - |
| dc.description.abstract | 我們是研究半導體數學中的量子擴散漂移模型（QDD Model）
又叫做密度梯度模型（DG Model），在這個巨關模型中包含了 電子密度的非線性拋物線方程和電子位能的波松方程。而我們是 利用有限差分方法來離散化這個模型方程，而且利用牛頓疊代法 來解這個離散系統，最後我利用了Ballistic二極體結構來展示 這個數值方法。 | zh_TW |
| dc.description.abstract | We study the quantum drift diffusion model (QDD) which was known (Density Gradient Model DG model) of semiconductor. This macroscopic model consists of a nonlinear parabolic equation for electron density, which coupled with a Poisson equation for electrostatic potential. We solve this system numerically by finite difference method, which can maintain the positivity of density in whole space. Numerical results for a ballistic diode structure are presented. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T08:21:15Z (GMT). No. of bitstreams: 1 ntu-94-R89221017-1.pdf: 960289 bytes, checksum: f46004b5d9b5436d399eb5f6dee8d8ec (MD5) Previous issue date: 2005 | en |
| dc.description.tableofcontents | Content:
中文摘要 5 Abstract 6 1.Introduction 7 1-1 Quantum models of semiconductor 7 2.The Quantum Drift Diffusion model (QDD) 8 2-1 Derivation of the stationary Quantum Drift Diffusion model 8 2-2 Scaling analysis of Quantum Drift Diffusion model 11 2-3 The boundary condition 14 3.Numerical analysis 15 3-1 Discretization in Space 15 3-2 Iteration Method 17 3-3 Numerical results 19 Appendix (A) 22 Appendix (B) 26 | |
| dc.language.iso | en | |
| dc.subject | 半導體數學 | zh_TW |
| dc.subject | 量子模型 | zh_TW |
| dc.subject | 擴散漂移模型 | zh_TW |
| dc.subject | Semiconductor | en |
| dc.subject | Quantum drift diffusion model | en |
| dc.title | 半導體中QDD模型的數值方法 | zh_TW |
| dc.title | Numerical method of the Quantum Drift Diffusion in Semiconductor | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 93-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 王偉成,周謀鴻 | |
| dc.subject.keyword | 半導體數學,擴散漂移模型,量子模型, | zh_TW |
| dc.subject.keyword | Semiconductor,Quantum drift diffusion model, | en |
| dc.relation.page | 27 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2005-07-19 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 數學研究所 | zh_TW |
| 顯示於系所單位： | 數學系 | |
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