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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林清富(Ching-Fuh Lin) | |
| dc.contributor.author | Zhao-Ren Huang | en |
| dc.contributor.author | 黃昭仁 | zh_TW |
| dc.date.accessioned | 2021-06-13T08:04:22Z | - |
| dc.date.available | 2006-07-28 | |
| dc.date.copyright | 2005-07-28 | |
| dc.date.issued | 2005 | |
| dc.date.submitted | 2005-07-21 | |
| dc.identifier.citation | 第一章
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/36530 | - |
| dc.description.abstract | 本論文研究新一代的矽奈米結構製作技術，利用準分子雷射穿過石英模熔化矽表面，再施壓將石英表面奈米結構轉印至矽晶片上。石英模可用兩種方式製作而得：第一種是以金奈米顆粒做為乾蝕刻遮罩，在石英表面蝕刻出奈米柱狀結構。藉由調整高溫爐升溫和急速降溫等熱處理條件，可控制金奈米顆粒的外型尺寸。實作之石英奈米柱最小直徑可達20 nm，高度約20∼30 nm，彼此的間距也被控制在20 nm左右。第二種則是以電子束微影方式製作石英模，光阻/導電材料/石英之多層結構被提出來縮小電子束描劃之線寬尺寸。完成石英模製作後，我們嘗試多種壓印方式，成功將石英奈米結構轉印至矽晶片上，並且認為矽熔化狀態極低的黏滯係數和液相轉固相體積膨脹等特徵是雷射輔助壓印能夠成功的原因。最後我們以高溫熱擴散方式製作矽奈米pn接面發光元件，室溫下電激發光之最高外部量子效率為6x10-5，其頻譜峰值對應於矽能隙，載子復合放光機制為激子和橫向光學聲子碰撞所主導。此外，藉由矽晶片之少數載子生命期量測可得知乾蝕刻和高溫擴散等奈米結構製作方式對於矽晶格品質破壞極大，而雷射輔助壓印相較之下為低度破壞製程。基於此原因，我們提出以雷射輔助壓印和擴散製程來製作矽奈米pn接面發光元件，以期矽發光效率能夠進一步突破。 | zh_TW |
| dc.description.abstract | Technology of nano-structures on silicon is investigated. An excimer laser pulse melts a thin surface layer of silicon through a quartz mold, and it is embossed into the resulting liquid layer. There are two methods for quartz mold fabrication. First, etch the surface of quartz to form nano-pillars using nano-grains of gold as dry etching mask. The pattern and size of gold nano-grains can be controlled by different thermal treatment conditions. The resulting quartz nano-pillars are as small as 20 nm in diameter, 20~30 nm in height, and the gaps among them are about 20 nm. Second, E-beam lithography is used to fabricate quartz molds. Multi-layer structures of resist/electro-conductive materials/quartz are proposed to narrow down the linewidth and pitch of designed patterns. Nano-structures are successfully imprinted on silicon with fabricated quartz molds. The result of laser-assisted imprint is attributed to the low viscosity of molten silicon and the characteristic of volume expansion when silicon transforms from liquid to solid. Finally, thermal diffusion is used to fabricate nano-structured silicon pn junction LEDs, the external quantum efficiency of EL of which is up to 6x10-5 at room temperature. Phonon-assisted and exciton-involved radiative recombination dominates the EL spectra, the main peak of which corresponds to the bandgap of silicon. In addition, the fabrication of dry etching or thermal diffusion is high damage process to silicon crystal quality known by measuring minority carrier lifetime from bulk silicon, while laser-assisted imprint is low damage one. Based on the reason, laser-assisted imprint and diffusion are proposed to fabricate nano-structured silicon pn junction LEDs for the breakthrough of light from silicon. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T08:04:22Z (GMT). No. of bitstreams: 1 ntu-94-R92941023-1.pdf: 42813014 bytes, checksum: 3a3ac64d1c46f6b65142f01928dac930 (MD5) Previous issue date: 2005 | en |
| dc.description.tableofcontents | 第一章 引言 1
1-1 研究動機 1 1-2 論文導覽 24 參考文獻 25 第二章 以金奈米顆粒做為乾蝕刻遮罩製作石英奈米柱狀結構 29 2-1 簡介 29 2-2 製程與金遮罩效果實驗 31 2-3 石英奈米柱外型與尺寸控制 37 2-4 結論 54 參考文獻 55 第三章 以電子束微影製作規則性石英奈米結構 57 3-1 簡介 57 3-2 電子束微影製程與條件測試 58 3-3 溝渠型與屋脊型之石英奈米結構製作 65 3-4 以導電材料層進一步縮小電子束微影之線寬尺寸 77 3-5 結論 81 參考文獻 82 第四章 準分子雷射輔助之奈米壓印微影技術 85 4-1 簡介 85 4-2 壓印方法嘗試與壓印結果 88 4-3 壓印結果之解釋與探討 98 4-4 結論 101 參考文獻 102 第五章 矽奈米pn接面發光元件之製作與特性量測 105 5-1 以鋁/二氧化矽奈米粒子混合之高溫擴散製程 105 5-2 以二氧化矽奈米粒子遮罩阻擋硼摻雜之高溫擴散製程 110 5-3 元件電激發光特性之量測與分析 116 5-4 準分子雷射輔助之奈米壓印與擴散製程 118 5-5 結論 121 參考文獻 122 第六章 總結 123 6-1 論文回顧 123 6-2 未來展望 126 | |
| dc.language.iso | zh-TW | |
| dc.subject | 矽發光元件 | zh_TW |
| dc.subject | 奈米結構 | zh_TW |
| dc.subject | 奈米壓印 | zh_TW |
| dc.subject | nano-imprint | en |
| dc.subject | silicon light-emitting diodes | en |
| dc.subject | nano-structures | en |
| dc.title | 矽奈米結構之製作和應用 | zh_TW |
| dc.title | Fabrication and Applicaion of Silicon Nano-structures | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 93-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李嗣涔(Si-Chen Lee),陳永芳(Y. F. Chen) | |
| dc.subject.keyword | 奈米結構,奈米壓印,矽發光元件, | zh_TW |
| dc.subject.keyword | nano-structures,nano-imprint,silicon light-emitting diodes, | en |
| dc.relation.page | 127 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2005-07-21 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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| ntu-94-1.pdf 未授權公開取用 | 41.81 MB | Adobe PDF |
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