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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳志毅 | |
| dc.contributor.author | Ming-Lei Chen | en |
| dc.contributor.author | 陳明磊 | zh_TW |
| dc.date.accessioned | 2021-06-13T07:47:35Z | - |
| dc.date.available | 2008-08-01 | |
| dc.date.copyright | 2005-08-01 | |
| dc.date.issued | 2005 | |
| dc.date.submitted | 2005-07-26 | |
| dc.identifier.citation | 1：High transparency low resistance oxidized Ni/Au–ZnO contacts
to p-GaN for high performance LED applications Sung-Pyo Jung*, 1, Chien-Hung Lin1, Hon Man Chan1, Zhiyong Fan2, J. Grace Lu1, 2, and Henry P. Lee1 1 Department of Electrical Engineering and Computer Science 2 Department of Chemical Engineering and Material Science, Henry Samueli School of Engineering, University of California, Irvine, USA 2：ZnO–GaN tunnel junction for transparent ohmic contacts to p-GaN E. Kaminska a,., A. Piotrowskaa, K. Golaszewskaa, R. Kruszka a, A. Kuchuk a, J. Szade b,A. Winiarski b, J. Jasinski c, Z. Liliental-Weber c a Institute of Electron Technology, Al. Lotników 32/46, Warsaw 02-668, Poland b University of Silesia, Katowice, Poland c Lawrence Berkeley National Laboratory, Berkeley, CA, USA 3：Formation of ohmic contacts to p-type ZnO Makoto Kurimoto*, 1, A. B. M. Almamun Ashrafi2, Masato Ebihara1, Katsuhiro Uesugi1, Hidekazu Kumano1, and Ikuo Suemune1 1 Laboratory of Optoelectronics, Nanotechnology Research Center, Research Institute for Electronic Science, Hokkaido University, Kita 21, Nishi 10, Kita-ku, Sapporo 001-0021, Japan 2 Laboratory for Photophysics, Photodynamics Research Center, The Institute of Physical and Chemical Research, 519-1399, Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan 4：Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature V. Assuncao , E. Fortunato *, A. Marques , H. Aguas , I. Ferreira , M.E.V. Costa , R. Martins a a, a a a b a ´ . ¸ Department of Materials ScienceyCENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, a2829-516 Caparica, Portugal Department of Ceramics and Glass EngineeringyCICECO, University of Aveiro, 3810-193 Aveiro, Portugal b 5：Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN 6：Specific contact resistance of Ti/Al/Pt/Au ohmic contacts to phosphorus-doped ZnO thin films 7：Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices C. L. Tseng, M. J. Youh, G. P. Moore, and M. A. Hopkins Department of Physics, University of Bath, Bath, BA2 7AY United Kingdom R. Stevensa) Department of Engineering and Applied Science, University of Bath, Bath, BA2 7AY United Kingdom W. N. Wang Department of Physics, University of Bath, Bath, BA2 7AY United Kingdom 8：Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN June O Song, Kyoung-Kook Kim, Seong-Ju Park, and Tae-Yeon Seonga) Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea 9：Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO Ji-Myon Lee, Kyoung-Kook Kim, and Seong-Ju Parka) Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangju Institute of Science and Technology, Kwangju 500-712, Korea Won-Kook Choi Thin Film Technology Research Center, Korea Institute of Science and Technology, Cheongryang P.O. Box 131, Seoul 130-650, Korea 10：Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer Han-Ki KIM1;2_, Tae-Yeon SEONG1y, Koung-Kook KIM1, Seoug-Ju PARK1, Young Soo YOON3 and Ilesanmi ADESIDA2 1Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea 2Department of Electrical and Computer Engineering and Micro and Nanotechnology Laboratory, University of Illinois, Urbana, Illinois 61801, U.S.A. 11：Metal’Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor K. Nishizono,a) M. Okada, M. Kamei, D. Kikuta, K. Tominaga, and Y. Ohno Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1, Minami-jyosanjima, Tokushima 770-8506, Japan J. P. Ao Satellite Venture Business Laboratory, The University of Tokushima, 2-1, Minami-jyosanjima, Tokushima 770-8506, Japan 12：Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction Ching-Ting Lee,a) Qing-Xuan Yu, Bang-Tai Tang, Hsin-Ying Lee, and Fu-Tsai Hwang Institute of Optical Sciences, National Central University, Chung-Li 32054, Taiwan, Republic of China 13：Inductively-coupled-plasma reactive ion etching of ZnO using BCl -based3 plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO Han-Ki Kim , J.W. Bae , K.-K. Kim , S.-J. Park , Tae-Yeon Seong *, I. Adesida a,b a b b b, a Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801, USA a Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, South Korea b 14：Improved External E.ciency InGaN-Based Light-Emitting Diodes with Transparent Conductive Ga-Doped ZnO as p-Electrodes Ken NAKAHARA_, Kentaro TAMURA, Mitsuhiko SAKAI, Daisuke NAKAGAWA, Norikazu ITO, Masayuki SONOBE, Hidemi TAKASU, Hitoshi TAMPO1, Paul FONS1, Koji MATSUBARA1, Kakuya IWATA1, Akimasa YAMADA1 and Shigeru NIKI1 15：Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p-type GaN Jae-Hong Lim, Dae-Kue Hwang, Hyun-Sik Kim, Jin-Yong Oh, Jin-Ho Yang, R. Navamathavan, and Seong-Ju Parka) Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea 16：半導體物理與元件 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/35853 | - |
| dc.description.abstract | 摘 要
在本論文中，我們將比較使用傳統的鎳/金(Ni/Au)和氧化鋅摻雜 鎵(ZnO:Ga)以及Ni/Au/ZnO:Ga作為p型氮化鎵( p-GaN)的陽極接觸端 之特徵接觸阻抗和穿透率的大小，利用所觀測之電流-電壓( I-V ) 的特性曲線來判別所鍍之陽極材料與p-GaN間為歐姆接觸或蕭基接 觸，並利用傳輸線模型法(TLM)來求得特徵接觸阻抗。 發現Ni/Au和Ni/Au/ZnO:Ga之薄層能與p-GaN形成完美的歐姆接 觸，而Ni/Au薄層的厚度為200Å/200Å時，其特徵接觸阻抗在氮氣環境中經過600℃退火5分鐘後可以達到約2×10-3Ω㎝2，而Ni/Au/ZnO:Ga厚度為50Å/50Å/1000Å時，其特徵接觸阻抗在氮氣環境中經過600℃退火5分鐘後可以達到約1.7×10-2Ω㎝2，雖然比起Ni/Au薄層差了將近一個數量級，不過對於波長470nm的光之穿透率，Ni/Au/ZnO:Ga薄層卻高了15％左右，而ZnO:Ga薄膜厚度約1500Å時，與p-GaN間並不能形成完美的歐姆接觸，發現經過800℃退火1分30秒後可以達到最接近歐姆接觸，其特徵接觸阻抗約6×10-2Ω㎝2，比起Ni/Au和Ni/Au/ZnO:Ga之薄層都還要高，然而其對於波長470nm的光之穿透率卻高達約93％，比之前面二者都高出許多。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-13T07:47:35Z (GMT). No. of bitstreams: 1 ntu-94-R92941058-1.pdf: 565267 bytes, checksum: 34186d76390018c8c7c0795377a7476e (MD5) Previous issue date: 2005 | en |
| dc.description.tableofcontents | [論文目次]
第一章 緒論 摘要……………………………1 1-1 藍光氮化鎵的由來及發展…………………2 1-2 發光二極體的原理及結構…… ……………6 1-3 研究動機…… ………………………8 第二章 金屬與半導體間接觸之機制 2-1 金屬與半導體接觸的原理…..…..………………10 2-1-1 金屬與半導體之接面機制…………………………10 2-1-2 蕭基能障的形成…………………………10 2-1-3 金屬與n 或p 型半導體間形成歐姆接觸之原理及辦法…14 2-2 量測載子濃度及特徵接觸阻抗之方法…………17 2-2-1 霍爾量測………………………17 2-2-2 傳輸線模型法（Transmission line method）………20 第三章 實驗流程及材料分析結果 3-1 ZnO：Ga 薄膜特性及分析……………………24 3-1-1 ZnO：Ga 之薄膜特性…………………………24 3-1-2 不同濺鍍條件下的ZnO：Ga 之薄膜特性分析………25 3-2 實驗製程步驟……………………………32 3-3 實驗結果……………………………36 3-3-1 Ni/Au 對於P 型氮化鎵之結果…………………36 3-3-2 Ni/Au/ZnO：Ga(50Å/50Å/1000Å)………………43 3-3-3 ZnO：Ga 對於P 型氮化鎵的研究…………45 第四章 結果討論與展望 4-1 Au/Ni/p-GaN 歐姆接觸之原理……………………51 4-2 ZnO：Ga/Au/Ni/ZnO：Ga和ZnO：Ga /p-GaN 結構討論……53 參考文獻…………………………………………54 | |
| dc.language.iso | zh-TW | |
| dc.title | 歐姆接觸和特徵接觸阻抗在p型氮化鎵上的研究 | zh_TW |
| dc.title | The research of ohmic contact and specific contact resistance on p-GaN | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 93-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 楊志中,黃建璋 | |
| dc.subject.keyword | 氮化鎵,氧化鋅摻雜鎵,傳輸線模型法,特徵接觸阻抗,穿透率, | zh_TW |
| dc.subject.keyword | GaN,ZnO:Ga,Transmission line method,specific contact resistance,transmission, | en |
| dc.relation.page | 56 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2005-07-26 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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