氮化鎵微型共振腔的製作與特性分析

Abstract

近年來，氮化鎵材料已經引起各界廣泛的注意，尤其是在藍紫外光發光元件上的潛力。由於傳統乾式蝕刻所造成的種種材料上的破壞，我們需要尋找另一種能夠有效的提高元件效率及壽命的新製程方式。本論文討論了濕式蝕刻在氮化鎵材料上的製程應用。光致蝕刻反應在本文中有詳細的特性討論及可能應用的方向。另外，蝕刻的晶格特性也一併的在本文中被探討。分散式布拉格反射鏡雷射二極體亦成功的由濕式蝕刻的方式製作出來。不同形狀及大小的氮化鎵微型共振腔使用同樣的濕式蝕刻方式也成功的被製作出來。所有元件的光學特性分析一併再論文中有詳細的描述，詳細的理論在論文中亦有提及。最後，可能的應用及發展在最後一章有概略的介紹以及本篇論文的結論。

In the last decades, gallium nitride materials have drawn much attention and have great potential for the UV-Blue light emitting devices. Due to the disadvantages such as material damages in dry etch, new fabrication processes are needed to enhance the efficiency and lifetime of light emitting devices. This thesis explores the use of wet chemical etching technique as processing tool for GaN – based semiconductors. The general properties of the photo-enhanced chemical (PEC) reaction have been inspected and described in detail for application purpose. Crystallographic etching properties were presented and provided a useful route to different kinds of application. The blue laser diode with distributed Bragg reflectors (DBR) was successfully obtained by the PEC method. In addition, this technique has been used to fabricate GaN microcavities of different geometry and sizes according the crystal nature of GaN. All the fabricated devices were analyzed with optically pumped experiment apparatus. Theoretical investigation of these devices have been proposed and demonstrated in the same thesis. The general conclusions and possible applications in the future were discussed in the last chapter of this work.