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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/35303完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 馮哲川 | |
| dc.contributor.author | Hung-Chiao Lin | en |
| dc.contributor.author | 林宏橋 | zh_TW |
| dc.date.accessioned | 2021-06-13T06:47:22Z | - |
| dc.date.available | 2007-08-01 | |
| dc.date.copyright | 2005-08-01 | |
| dc.date.issued | 2005 | |
| dc.date.submitted | 2005-07-28 | |
| dc.identifier.citation | chapter 1
[1] L. Rayleigh, G. G. Stokes, Proc. Royal Soc. London 75, 199 (1905). [2] A. Smekal, Naturwiss. 11, 873 (1923). [3] G. Herzberg, ‘Infrared and Raman spectra of Polyatomic Molecules’, Van Nostrand, New York (1945). [4] Sir C. V. Raman, K. S. Krishnan, Ind. J. Phys. 2, 387 (1928). [5] Sir C. V. Raman, K. S. Krishnan, Nature 121, 501 (1928). [6] G. S. Landsberg, L. I. Mandelstam, Naturwiss. 16, 557 (1928). [7] G. Placzek, in Handbuck der Radiologie, ed. E. Marx, Vol. 6, part2, p. 209, Akademische Verlagsgesellschaft, Leipzig (1934). [8] Th. Gessmann, E.F. Schubert, J. Appl. Phys. 95, 2203 (2004). [9] W.C. Peng, Y.S. Wu, Appl. Phys. Lett. 84 (2004) 1841. [10] J.R. Dong, J.H. Teng, S.J. Chua, B.C. Foo, Y.J. Wang, L.W. Zhang, H.R. Yuan, S. Yuan, J. Appl. Phys. 95, 5252 (2004). [11] A. Shima, M. Kato, Y. Nagai, T. Motoda, T. Nishimura, E. Omura, M. Otsubo, IEEE J. Selected Topics Quantum Electron. 1, 734 (1995). [12] H.K. Yow, P.A. Houston, C.C. Button, T.W. Lee, J.S. Roberts, J. Appl. Phys. 76, 8135 (1994). [13] X.B. Zhang, R.D. Heller, M.S. Noh, R.D. Dupuis, G. Walter, N. Holonyak, J. Appl. Phys. Lett. 83, 1349 (2003). [14] C.Y. Liu, S. Yuan, J.R. Dong, S.J. Chua, M.C. Y. Chan, S.Z. Wang, J. Appl. Phys. 94, 2962 (2003). [15] A. Zunger, S. Mahjan, in Handbook on Semiconductors, ed. T. S. Moss, Vol. 3, ed. S. Mahajan, (Elsevvier Scince B. V., 1994), pp. 1399. [16] G.B. Stringfellow, L.C. Su, Y.E. Strausser, J.T. Thomton, Appl. Phys. Lett. 66, 3155 (1995). [17] Z.C. Feng, E. Armour, I. Ferguson, R.A. Stall, L. Malikova, T. Holden, J.Z. Wan, F.H. Pollak, M. Pavlosky, J. Appl. Phys. 85 3824, (1999). [18] K.H. Chang, R. Gibala, D.J. Srolovitz, P.K. Bhattacharya and J.F. Mansfield, J. Appl. Phys. 67, 4093 (1990). [19] R. Beanland, M. Aindow, T.B. Joyce, P. Kidd, M. Lourenco and P.J. Goodhew, J. Crystal Growth 149, 1 (1995). [20] A.M. Andrews, A.E. Romanov, J.S. Speck, M. Bobeth and W. Pompe, Appl. Phys. Lett. 77, 3740 (2000). [21] T. Asano, T. Nakao, H. Matada, T. Tambo, H. Ueba and C. Tatsuyama, J. Appl. Phys. 87, 8759 (2000). [22] H.L. Seng, T. Osipowicz, T.C. Sum, E.S. Tok, G. Breton, N.J. Woods and J. Zhang, Appl. Phys. Lett. 80, 2940 (2002). [23] A. Portavoce, I. Berbezier, P. Gas and A. Ronda, Phys. Rev. B 69, 155414 (2004). [34] S.H. Olsen, A.G. O”Neil, S. Chattopahyay, K.S.K. Kwa, L.S. Driscoll, D.J. Norris, A.G. Cullis, R.D. Robbins and J. Zhang, Semicond. Sci. Technol. 19, 707 (2004). [25] M. Kondow, S. Minagawa and S. Satoh, Appl. Phys. Lett. 51, 2001 (1987). [26] M. Kubo, M. Mannoh and T. Narusawa, J. Appl. Phys. 66, 3767 (1989). [27] H. Richter, Z.P. Wang and L. Ley, Solid State Commu. 39, 625 (1981). [28] P. Parayanthal and Fred H. Pollak, Phys. Rev. Lett. 52, 1822 (1984). [29] T. Ruf, J. Serrano, M. Cardona, P. Pavone, M. Pabst, M. Krisch, M. D'Astuto, T. suski, I. Grzegory, M. Leszczynski, Phys. Rev. Lett. 86 906, (2001). [30] I. H. Campbell, P. M. Fauchet, Solid State Commun. 58 (1986) 739. [31] Leah Bergman, Michael D. Bremser, William G. Perry, Robert F. Davis, Mitra Dutta and Robert J. Nemanich, Applied Physics Letters 71, 2157 (1997). chapter 2 [1] S. Nakamura, S. Pearton, G. Fasol, ‘The Blue Laser Diode – the complete story, Springer, Berlin (2000). [2] H. Spohn, ‘Dynamics of Charged Paticles and Their Radiation Field’, Camberige University Press (2004). [3] L. I. Schiff, ‘Quantum Mechanics’, 3rd ed: McGraw- Hill, New York (1968). [4] G. Abstreiter, M. Cardona, A. Pinczuk, in ‘Light Scattering in Solids IV’, ed. M. Cardona, G. Gűntherodt, p.5, Springer-Verlag, Berlin (1984). [5] J. J. Sakurai, ‘ Modern Quantum Mechanics’, Rev. ed. S. F. Tuan, Addison-Wesley Pub. Co., New York (1994). [6] P. M. Platzman, N. Tzoar, Phys. Rev. 136, A11 (1964). [7] R. Loudon, ‘The Quantum Theory of Light’, 3rd ed., Oxford University Press, New York (2000). [8] S. S. Jha, Comments Solid State Phys., 4, 111 (1972). [9] G. D. Mahan, ‘Many-Particle Physics’, 2nd ed., Plenum Express, New York (1990). [10]P. M. Platzman, P. A. Wolf, ‘Waves and interactions in solid state plasmas’, Academic Press, New York, (1973). [11] P. M. Platzman, Phys. Rev. 139, A379 (1965). [12] N. W. Ashcroft, N. D. Mermin, ‘Solid State Physics’, Saunders College, Philadelphia (1976). [13] P. A. Wolff, Phys. Rev. Lett. 16, 225 (1966). [14] M. Cardona, in ‘Light Scattering in Solids II’, ed. M. Cardona, G. Gűntherodt, p.19, Springer-Verlag, Berlin (1982). [15] R. Shankar, ‘Principles of Quantum Mechanics’, 2nd ed., Plenum Press (1994). [16] J. D. Jackson, ‘Classical electrodynamics’, 3rd ed., Wiley, New York (1999). [17] W. Hayes, R. Loudon, ‘Scattering of Light by Crystals’, Wiley, New York, (1978). [18] A. Mooradian, G. B. Wright, Phys. Rev. Lett. 16 (1966) 999. [19] D. J. Griffiths, ‘Introduction to electrodynamics', Prentice Hall, New Jersey (1999). [20] M. V. Klein, in ‘Light Scattering in Solids I’, ed. M. Cardona, p.147, Springer-Verlag, Berlin (1983). [21] W. A. Harrison, ‘Solid State Theory’, McGraw-Hill, New York (1970). [22] Merzbacher. e., ‘Quantum Mechanics’, 3rd ed., Wiley, New York (1998). [23] L. D. Landau, E. M. Lifschitz, ‘Classical Field Theory’, Addison-Wesley, New York (1962). [24] D. T. Hon, W. L. Faust, Appl. Phys. 1, 241 (1973). [25] R. A. Cowley, J. Phys. (Paris) 26, 659 (1965). [26] J. F. Scott, T. C. Damen, J. Ruvalds, Zawadowski, Phys. Rev. B 3, 1295 (1971). [27] M. V. Klein, B. N. Ganguly, P, J. Colwell, Phys. Rev. B 6, 2380 (1972). [28] C. Y. Chen, Phy. Rev. B 27, 1436 (1983). [29] P. J. Colwell, M. V. Klein, Phys. Rev. B 6, 498 (1972). [30] G. Irmer, V. V. Toporov, B. H. Bairamov, J. Monecke, Phys. Stat. Sol.(b) 119, 595 (1983). [31] L. D. Landau, E. M. Lifshitz, ‘Statistical physics’, Oxford, New York (1980). [32] W. L. Faust, C. H. Henry, Phys. Rev. Lett. 17, 1265 (1966). [33] J. Menèndez, M. Cardona, Phys. Rev. Lett. 3, 1297 (1983). [34] F. Demangeot, C. Pinquier, J. Frandon, M. Gaio, O. Briot, B. Maleyre, S. Ruffenach, B. Gil, Phys. Rev. B 71, 104305 (2005). [35] M. Ramsteiner, O. Brandt, K. H. Ploog, Phys. Rev. B 58, 1118 (1998). [36] N. D. Mermin, Phys. Rev. B 1, 2362 (1970). [37] Peter Y. Yu, Manuel Cardona, ‘Fundamentals of Semiconductors’, p. 288, Springer, New York (1996). [38] L. J. van der Pauw, Philips Res. Repts. 13, 1 (1958). [39] W. R. Runyan, T. J. Shaffner, ’Semiconductor Measurements and Instrumentation’, McGraw-Hill, New York (1998). [40] R. Trommer, A. K. Ramds, in ‘Physics of Semiconductors 1978’, ed. B. L. H. Wilson, Ins. Phys. London, London (1979). [41] C. F. Klingshirn, ‘Semiconductor Optics’, Springer, Berlin (1997). [42] V. Yu. Davydov, Yu. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, R. A. Evarestov, Phys. Rev. B 58, 12899 (1998). [43] F. Demangeot, J. Frandon, M. A. Renucci, N. Grandjean, B. Beaumont, J. Massies, P. Gibart, Solid State Commun. 106, 491 (1998). [44] F. Demangeot, C. Pinquier, J. Frandon, M. Gaio, Obriot, B. Maleyre, S. Ruffenach, B. Gil, Phys. Rev. B 71, 104305 (2005). [45] H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, C. Thomsen, Phys. Rev. B 55, 7000 (1997). [46] A. V. Rodina, B. K. Meyer, Phys. Rev. B. 64, 245209 (2001). [47] T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, K. Ohtsuka, J. Appl. Phys. 82, 3528 (1997). [48] T. Kozawa, T. Kachi, H. Kano, Y. Taga, M. Hashimoto, N. Koide K. Manabe, J. Appl. Phys. 75, 1098 (1994). [49] C. Wetzel, W. Walukiewicz, J. W. III. Ager, Mat. Res. Soc. Symp. Proc. 149, 567 (1997). [50] Z. C. Feng, Opt. Eng. 41, 202 (2002). [51] D. Olego, M. Cardona, Phys. Rev. B 24, 7217 (1981). [52] D. Oligo, M. Cardona, Solid State Commu. 32, 375 (1979). [53] M. Ramsteiner, O. Brandt, K. H. Ploog, Phys. Rev. B. 58, 1118 (1998). [54] J. S. Thakur, D. Haddad, V. M. Naik, R. Naik, G. W. Auner, H. Lu, W. J. Schaff, Phys. Rev. B 71, 115203 (2005). [55] G. Irmer, M. Wenzel, J. Monecke, Phys. Rev. B 56, 9524 (1997). [56] U. Nowak, W. Richter, G. Sachs, Phys. Stat. Sol.(b) 108, 131 (1981). [57] S. Buchner, E. Burstein, Phys. Rev. Lett. 33, 908 (1974). [58] B. Abstreiter, R. Trommer, M. Cardona, A. Pinczuk, Solid State Commun. 30, 703 (1979). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/35303 | - |
| dc.description.abstract | chapter 1, we will first discuss the development of Raman scattering and its basic theory. Further, the spacial correlation model which is used in the this chapter to realize the characterization of AlInGaP thin films will be performed. And about the thin films, two series of (AlxGa1-x)0.5In0.5P films were grown on lattice-matched GaAs by low pressure metalorganic chemical vapor deposition under different conditions and studied by Nomarski microscopy (NM), atomic force microscopy (AFM), photoluminescence (PL) and Raman scattering. NM and AFM images show cross-hatch patterns, related to dislocations and lattice mismatch, from one set of samples, but none from another set of films. Comparative PL and Raman measurements and analyses indicated the correlation between surface and optical properties. The degree of variations in compositions and film quality with the growth conditions were found from the spectral analyses. Raman spectral features are more sensitive to the sample growth parameter variations. The line shape analysis of line width, integrated intensity ratio and spacial correlation model fittng leads to information about the order of the sample crystalline quality. And comparison of these measurement results, the results from spacial correlation model analysis will be identified with the others. Accordingly, this method is more convenient method to characterize the crystalline quality.
chapter 2, we will discuss the electronic Raman scattering based on the LO phonon-plasmon interaction effect, and first interpret the motivation and relative application. Furthermore, since the scattering theory is very miscellaneous, the theory from the fundamental to the forming model will be completely performed. Under different considerations, the mechanisms here will focus on the charge density fluctuation, deformation-optical and electro-optical effect and their perturbed result. After the basic theory, the simulation on the GaN and InN material will be also performed and separately predict the both wave vector dependent (long wave length) and wave vector nonconservation effect. We have prepared the Hall measured data of GaN samples to be a contrast and compare with the simulation results respectively. Likewise, the simulation results of the wave vector nonconservation are very unusual to the other published papers but consisted to the basic theory. Accordingly, we will comment on these papers (provide 3 Physical Review B papers). Finally, we will use these points to reform another reasonable model so that the more accurate recursive data to the Hall measurement could be obtained. The result consists with our points. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T06:47:22Z (GMT). No. of bitstreams: 1 ntu-94-R92941026-1.pdf: 5892309 bytes, checksum: 46a2a38a047e3d17c8871c9b286bc818 (MD5) Previous issue date: 2005 | en |
| dc.description.tableofcontents | Figure List III
Table List VII Chapter 1 Characterization of AlInGaP Thin Film 1 Abstract 1 1.1 Introduction 2 1.1.1 Raman scattering 2 1.1.2 AlGaInP Material 4 1.2 Theory 5 1.2.1 Raman spatial correlation model 5 1.3 Experiment 8 1.3.1 Samples and experiment equipment 9 1.3.2 Surface morphology from Nomarski interference microscopy 10 1.3.3 Surface morphology from atomic force microscopy (AFM) 11 1.3.4 Photoluminescence (PL) 12 1.3.5 Raman Scattering 14 1.4 DISCUSSION 16 1.5 CONCLUSIONS 22 Reference 24 Chapter 2 Electronic Raman Scattering in GaN 33 Abstract 33 2.1 Introduction (motivation) 34 2.2 Theory 35 2.2.1 Light Scattering from Free Carrier 35 2.2.2 Light Scattering from the Deformation Potential and Electro-Optical Effect 48 2.2.3 Dielectric Function 54 2.3 Sample Preparation and measurement system 57 2.3.1 Samples 57 2.3.2 Raman measurement 58 2.3.3 Hall measurement 58 2.4 Results and Discussion 60 2.4.1 Simulation of Dielectric Function by Drude Model: the Wave Vector independent Case 60 2.4.2 LO Phonon-Plasmon Interaction Fitting In GaN: the Wave Vector Independent Case 73 2.4.3 Simulation of LO Ponon-Plasmon Interaction in GaN: the Wave Vector Dependent Case 86 2.4.4 LO Phonon-Plasmon Interaction Fitting In GaN: the Wave Vector dependent Case 113 2.5 Conclusion 122 Reference 124 | |
| dc.language.iso | en | |
| dc.title | 三五族相關材料之拉曼分析 | zh_TW |
| dc.title | Raman Studies on III-V Relative Materials:
Especially on LO Phonon-Plasmon Interaction Effect | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 93-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 江衍偉,邱奕鵬 | |
| dc.subject.keyword | 拉曼,氮化鎵,聲子,電漿子,電漿, | zh_TW |
| dc.subject.keyword | Raman,GaN,Phonon,Plasmon,Plasma, | en |
| dc.relation.page | 127 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2005-07-29 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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