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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 許仁華(J. H. Hsu) | |
| dc.contributor.author | Jia-Rui Huang | en |
| dc.contributor.author | 黃家睿 | zh_TW |
| dc.date.accessioned | 2021-06-13T06:45:48Z | - |
| dc.date.available | 2005-08-01 | |
| dc.date.copyright | 2005-08-01 | |
| dc.date.issued | 2005 | |
| dc.date.submitted | 2005-07-29 | |
| dc.identifier.citation | References
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/35259 | - |
| dc.description.abstract | Many researchers have been looking for the way to fabricate new devices by integrating metal-based electronics with present semiconductor technology. Since Datta et al. [3] proposed the idea of ‘spin-based’ field-effect transistor (Spin-FET) in 1990, much of effort was exhausted in the realization of spin-FET because it adds additional spin-degree of freedom in conventional ‘charge-based’ field-effect transistor. One might wonder how Spin-FET devices can work at all instead of a large conductivity mismatch between ferromagnetic metal and semiconductor. One solution is to employ a tunnel barrier to inject a spin-polarized current. However, no report has addressed a successful Spin-FET device yet.
This study is to follow spin-FET dream and, at the very beginning, we focus our research on design and fabrication of a spin injection source using ferromagnetic metal with tunnel barrier. For integration of ferromagnetic metal and semiconductor, surface oxides on GaAs substrate were removed effectively by using atomic hydrogen. To measure spin injection efficiency for the injection source, we also designed and calculated quantum well (QW) structure for detection of spin-polarized current. However, there is no available measurement apparatus in NTU yet, and so we put much of our effort on the study of design and fabrication of a theoretically high spin injection source. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T06:45:48Z (GMT). No. of bitstreams: 1 ntu-94-P92222002-1.pdf: 1665023 bytes, checksum: 3ff2cfde678856a38846a63b1b7cf033 (MD5) Previous issue date: 2005 | en |
| dc.description.tableofcontents | Contents
1. Introduction 7 1.1 Why do we study room-temperature spin injection? 7 1.2 Spin Injection and Detection: Early Experiments 10 1.2.1 Spin Polarized Tunneling: “First Experiments” (1971) 10 1.2.2 Spin Injection in Clean Bulk Metals (1986) 11 1.2.3 Datta-Das Spin-FET Model (1990) 12 1.3 Spin Dynamics in Semiconductor (SC) 15 1.3.1 Depolarization due to Oblique Magnetic Field (Oblique Handle Effect) 15 1.3.2 Spin Precession due to Bulk Inversion Asymmetry (Dresselhaus Effect) 17 1.3.3 Spin Precession due to Structural Inversion Asymmetry (Rashba Effect) 19 1.3.4 Spin Decoherence due to Native Interface Asymmetry (NIA) 20 1.4 Spin Injection and Detection: After Datta and Das 23 1.4.1 Spin Injection in Impure Metal Films (1993) 23 1.4.2 Gate Control of Spin-Orbit Interaction in Inverted MODFET (1997) 24 1.4.3 Spin Injection at Ferromagnetic Metal (FM)-SC Interface (1999) 25 1.4.4 Spin Injection and Detection in DMS Spin-LED with QW (1999) 26 1.4.5 Spin Injection and Detection in FM Spin-LED with QW (2000-2002) 29 1.5 Our Studies in Spin Injection 33 2. Theory 35 2.1 Theory of Carrier Transport in SC 35 2.2.1 Concept of Chemical Potential 35 2.2.2 Boltzmann Transport Equation 36 2.1.1 Carrier Transport by Diffusion Only 41 2.1.2 Transport by Drift and Diffusion 43 2.1.3 Einstein’s Relation 44 2.2 Fundamentals of Spin-Polarized Transport in FM and SC 49 2.3 Conductivity Mismatch in Spin Injection 52 2.4 Spin Injection Using Tunnel Contacts 60 2.5 Drift-Diffusion Equations for Spin in SC 66 2.6 Electric Field Dependence in Spin Diffusion 71 2.7 Standard Symmetric QW in Spin Detection 77 3. Experiments 86 3.1 Sample Preparation 86 3.1.1 Epi-wafer Prepared by Molecular Beam Epitaxy 86 3.1.2 Oxide Removal Process Using Atomic Hydrogen 88 3.1.3 Thin-film Deposition by DC Sputtering System 91 3.2 Sample Characterization 96 3.2.1 Measurement of Film Thickness by AFM 96 3.2.2 Fabrication and Characterization of Cross-section TEM Samples 98 3.2.3 Measurement of Interface Roughness by XRR 103 3.2.4 Measurement of X-ray Diffraction by XRD 108 3.2.5 Measurement of Magnetic Properties by VSM 109 3.2.6 Measurement of Photoluminescence by PL 112 3.2.7 Measurement of Junction Resistance by MTJ pattern 115 4. Results and Discussion 116 4.1 Characterization of Oxides Removal Process (for integration) 116 4.2 Investigation of Interface Sharpness (To reduce spin-flipping) 120 4.3 Crystallinity of Ni80Fe20(Py) films on n-Si(100) (for spin polarization) 126 4.4 Magnetic properties of Py films on n-GaAs(100) (for spin injection) 128 4.5 Characterization of Al0.3Ga0.7As/GaAs QW (for spin detection) 134 4.6 Characterization of AlOx Quality (for tunnel barrier) 137 5. Summary 139 References 143 Acknowledgements 147 | |
| dc.language.iso | en | |
| dc.title | Study of Room-temperature Spin Injection in Ni80Fe20/AlOx/GaAs-based QW (MIS Spin-LED) System | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 93-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張慶瑞(C. R. Chang),張顏暉(Y. H Chang),林浩雄(H. H. Lin),盧志權(C. K. Lo) | |
| dc.subject.keyword | 自旋射入, | zh_TW |
| dc.subject.keyword | Spin Injection, | en |
| dc.relation.page | 148 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2005-07-29 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
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