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| ???org.dspace.app.webui.jsptag.ItemTag.dcfield??? | Value | Language |
|---|---|---|
| dc.contributor.advisor | 張慶瑞(Ching-Ray Chang) | |
| dc.contributor.author | Yih-Fu Wong | en |
| dc.contributor.author | 翁逸夫 | zh_TW |
| dc.date.accessioned | 2021-06-13T06:38:52Z | - |
| dc.date.available | 2005-08-19 | |
| dc.date.copyright | 2005-08-19 | |
| dc.date.issued | 2005 | |
| dc.date.submitted | 2005-08-09 | |
| dc.identifier.citation | 第一章
[1] E. Kasper, Properties of strained and relaxed Silicon Germanium, 94 (1995). 第二章 [1] 張俊彥,李秉傑,劉文超,雷添福,林浩雄,陳振芳,科儀新 知, 13, 4, 25 (81). [2] 林蔚;林浩雄,劉珀瑋,張福裕,科儀新知, 24, 2, 13 (91). [3] M. A. Herman H. Sitter, Molecular Beam Epitaxy, Springer (1996). [4] K. Watanabe,N. Koguchi and Y. Gotoh,Jpn. J. Appl. Phys.,39, 79 (2000). [5] Paul F Fewster , Semicond. Sci. Technol., 15, 370 (2000). [6] X-Ray Scattering from Semiconductors, Paul F Fewster. [7] J M Hartmann, B Gallas, J Zhang and J J Harris, Semicond. Sci.Technol., 15, 370 (2000). [8] 黃文雄, 表面分析儀器, 行政院國家科學委員會精密儀器發 展中心 (87.10). [9] James D. Plummer, Michael D. Deal, Peter B. Griffin, Silicon VLSI Technology: Fundamentals, Practice and Modeling. [10] W.-X. Nia, K. Lyutovichb, J. Alamia, C. Tengstedta, M. Bauerb, E. Kasperb, Journal of Crystal Growth, 227–228, 756–760 (2001). [11] S. W. Lee, H. C. Chen, L. J. Chen, Y. H. Peng, C. H. Kuan, H. H. Cheng, J. Appl. Phys., 92, 11, 6880 (2002). 第三章 [1] J.C. Tsang, P.M. Mooney, F. Dacol, and J.O. Chu, J. Appl. Phys. 75, 8098 (1994). [2] E. Anastassakis, A. Pinczuk, E. Burstein, F. H. Pollak, M. Cardona, Solid State Commun., 8, 133 (1970). [3] F. Cerdeira, C. J. Buchenauer, F. H. Pollak, M. Cardona, Phy. Rev. B, 5, 580 (1972). [4] M. Chandrasekhar, J. B. Renucci, M. Cardona, Phy. Rev. B, 17, 1623 (1978). [5] E. Anastassakis, NATO ASI Ser. B, Phys., .273, 173 (1991). [6] B. Dietrich, E. Bugiel, J. Klatt, G. Lippert, T. Morgenstern, H.J. Osten, and P. Zaumseil,J. Appl. Phys. 74, 3177 (1993). [7] E. Anastassakis, Light Scattering in Semiconductor Structures and Superlattices, Eds.D.J. Lockwood and J.F. Young, Plenum Press, 173 (1991). [8] G. Bhagavannarayana, B. Dietrich, P. Zaumseil,and K.F. Dombrowski , phys. stat. sol. (a) 172, 425 (1999). [9] B. Dietrich, E. Bugiel, J. Klatt, G. Lippert, T. Morgenstern, H. J. Osten, P. Zaumseil, J. Appl. Phys. 74, 5, 3177 (1993). [10] J. C. Tsang, P. M. Mooney, F. Dacol, J. O. Chu, J. Appl. Phys. 75, 12, 8098 (1994). [11] Maria Gerling, Burkhart Dietrich, Semi. Sci. Tech. 16, 614 (2001). [12] E. Kasper, Properties of strained and relaxed Silicon Germanium, 121 (1995). 第四章 [1] E. Kasper, Properties of strained and relaxed Silicon Germanium, 121 (1995). [2] C.G. Van de Walle, Phys. Rev. B, 39, 1871 (1989). [3] J.Bardeen W. Shockley, Phys. Rev.B, 80, 72 (1950). [4] C.G. Van de Walle, R.M. Martin, Phys. Rev. Lett., 62, 2028, 1989. [5] R. Resta, L. Colombo, S. Baroni, Phys. Rev. B, 41, 12358, 1990; 43, 14273 (1991). [6] F.H. Pollak, M. Cardona, Phys. Rev. B, 172, 816 (1968). [7] C. Herring, E. Vogt, Phys. Rev., 101, 944 (1956). [8] I. Balslev, Phys. Rev.,143, 636 (1966). [9] E.O. Kane, Phys. Rev., 178, 1368 (1969). [10] E. Kasper, Properties of strained and relaxed Silicon Germanium, 87 (1995). [11] J. Weber, M.I.Alonso, Phys. Rev. B, 40, 5683 (1989). [12] N.O. Lipari,A.Baldereschi, Phy. Rev. B, 3, 2497 (1971). [13] Properties of Advanced Semiconductor Materials,Michael E. Levinshtein,Sergey L. Rumyantsev, Michael S. Shur. (2001). 附錄A [1] C.G. Van de Walle, R.M. Martin, Phys. Rev. B, 34, 5621 (1986). [2] L.D. Laude, F.H. Pollak, M. Cardona, Phys. Rev. B, 3, 2623 (1971). [3] C.G. Van de Walle, Phys. Rev. B, 39, 1871 (1989). [4] M. Cardona, G. Harbeke, O. Madelung, U. Rosler, in Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology vol. III/17a, Ed. O. Madelung, Springer Verlag, New York (1982). [5] M.Chandrasekhar, F.H. Pollak, Phys. Rev. B, 15, 2127 (1977). [6] G.S. Cargill III, J. Angilello, K.L. Kavanagh, Phys. Rev. Lett , 61, 1748 (1988). 附錄B E. Kasper, Properties of strained and relaxed Silicon Germanium, 121, 1995. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/35016 | - |
| dc.description.abstract | 運用拉曼光譜分析以分子束磊晶成長短週期Si/Si1-xGex應變超晶格之應變弛豫度。探測到幾個來自於虛擬基材、超晶格之矽鍺合金層和超晶格之應變矽晶層的聲子信號，藉分析聲子峰位可求得合金成份比和晶格弛豫度。
基於應變的檢測結果，考慮應變對能帶結構的調制效應，藉以求出樣品的能帶結構，以推論出激子之躍遷能量。經由比對自磁光光譜中觀察到的激子躍遷信號，獲得契合之結果。 | zh_TW |
| dc.description.abstract | The molecular-beam-epitaxial-grown short-period strained-layer Si/Si1-xGex superlattices were examined by Raman spectroscopy. By using several excitation sources, the Raman depth probe reveals the phonon signals from the virtual substrate, the Si1-xGex alloy of superlattices, strained Si-layer of superlattices, and unstrained Si-substrate separately. The Ge composition of virtual substrate and Si1-xGex alloy of superlattices can be determined, and the degree of relaxation of virtual substrate and strained Si-layer are found as well.
On the basis of the results of strain examination and consideration for the influence of the band structure, we know that the band structure of the sample belongs to type-II band alignment. It gives the preliminary explanation about the source of exciton transition observed from Magneto-optics spectra. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T06:38:52Z (GMT). No. of bitstreams: 1 ntu-94-R91222051-1.pdf: 3677622 bytes, checksum: aa2c67d140ad23f32e77f99e69722552 (MD5) Previous issue date: 2005 | en |
| dc.description.tableofcontents | 第一章 緒論
1.1 研究背景與動機•••••••••••••••••••••••••••••••13 1.2 研究目的••••••••••••••••••••••••••••••••••••17 1.3 論文架構與研究流程•••••••••••••••••••••••••••18 參考文獻••••••••••••••••••••••••••••••••••••••••20 第二章 晶體的成長技術 2.1 分子束磊晶技術•••••••••••••••••••••••••••••••21 2.2 晶體的應力及應變張量••••••••••••••••••••••••••35 2.3 利用雙晶X射線繞射校正成長參數••••••••••••••••••43 2.4 硼摻雜元素在矽鍺中的擴散行為•••••••••••••••••••51 2.5 X射線倒易空間圖觀測應變弛豫程度••••••••••••••••57 2.6 樣品的製備••••••••••••••••••••••••••••••••••68 2.7 實驗的條件••••••••••••••••••••••••••••••••••74 參考文獻••••••••••••••••••••••••••••••••••••••••76 第三章 拉曼光譜檢測晶體應變 3.1 矽鍺的拉曼光譜•••••••••••••••••••••••••••••77 3.2 形貌模型分析應變薄膜之晶格弛豫度•••••••••••••••83 3.3 Si/Si1-xGex應變超晶格之縱深應變分佈分析•••••••••95 參考文獻••••••••••••••••••••••••••••••••••••••••105 第四章 應變對矽鍺能帶結構的影響 4.1 應變對價帶結構的影響•••••••••••••••••••••••••107 4.2 應變對導帶結構的影響•••••••••••••••••••••••••110 4.3 Si/Si1-xGex應變超晶格之能帶結構•••••••••••••••112 4.4 Si/Si1-xGex應變超晶格之磁光光譜•••••••••••••••119 4.5 結論•••••••••••••••••••••••••••••••••••••••131 參考文獻••••••••••••••••••••••••••••••••••••••••132 附錄： 附表A 矽鍺半導體材料參數一覽表••••••••••••••••••••••133 附表B 無應變矽鍺半導體光學函數一覽表•••••••••••••••••135 | |
| dc.language.iso | zh-TW | |
| dc.subject | 矽鍺 | zh_TW |
| dc.subject | 分子束磊晶 | zh_TW |
| dc.subject | 超晶格 | zh_TW |
| dc.subject | 拉曼光譜 | zh_TW |
| dc.subject | 應變矽 | zh_TW |
| dc.subject | superlattices | en |
| dc.subject | strained silicon | en |
| dc.subject | Raman spectroscopy | en |
| dc.subject | Silicon Germanium | en |
| dc.subject | molecular-beam-epitaxial | en |
| dc.title | 以分子束磊晶成長矽鍺應變超晶格及其光學性質之研究 | zh_TW |
| dc.title | Growth and Optical Properties of Si/SiGe Strained-Layer Superlattices by MBE | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 93-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 賈至達(Chih-Ta Chia),鄭鴻祥(Hung-Hsiang Cheng) | |
| dc.subject.keyword | 矽鍺,分子束磊晶,超晶格,拉曼光譜,應變矽, | zh_TW |
| dc.subject.keyword | Silicon Germanium,molecular-beam-epitaxial,superlattices,Raman spectroscopy,strained silicon, | en |
| dc.relation.page | 135 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2005-08-11 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理研究所 | zh_TW |
| Appears in Collections: | 物理學系 | |
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| ntu-94-1.pdf Restricted Access | 3.59 MB | Adobe PDF |
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