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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/34902完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李君浩 | |
| dc.contributor.author | Yan-Hau Chen | en |
| dc.contributor.author | 陳彥豪 | zh_TW |
| dc.date.accessioned | 2021-06-13T06:36:31Z | - |
| dc.date.available | 2008-01-06 | |
| dc.date.copyright | 2006-01-06 | |
| dc.date.issued | 2005 | |
| dc.date.submitted | 2005-12-14 | |
| dc.identifier.citation | [1.1] C. W. Tang, and S. A. VanSlyke, “Organic electroluminescent diodes,” App. Phys. Lett. 51, 913 (1987).
[1.2] C. W. Tang, and S. A. Vanslyke, “Electroluminescence of doped organic thin films,” J. Appl. Phys. 65, 3610 (1989). [1.3] D. Braun, and A. J. Heeger, “Visible light emission from semiconducting polymer diodes,” App. Phys. Lett. 58, 1982 (1991). [1.4] D. V. Khramtchenkov, H. Bässler, and V. I. Arkhipov, “A model of electroluminescence in organic double-layer-light-emitting diodes,” J. Appl. Phys. 79, 9283 (1996). [1.5] B. K. Crone, P. S. Davids, I. H. Campbell, and D. L. Smith, “Device model investigation of single layer organic light emitting diodes,” J. Appl. Phys. 84, 833 (1998). [1.6] B. K. Crone, P. S. Davids, I. H. Campbell, and D. L. Smith, “Device model Investigation of bilayer organic light emitting diodes,” J. Appl. Phys. 87, 1974 (2000). [1.7] I. D. Parker, “Carrier tunneling and device characteristics in polymer light-emitting diodes,” J. Appl. Phys. 75, 1656 (1994). [1.8] 吳孟修, “Performance improvement of organic light-emitting device by using metal-dopant technology and a red dye,” 碩士論文 (2005) [1.9] M. A. Baldo, and S. R. Forrest, “Interface-limited injection in amorphous organic semiconductors,” Phys. Rev. B 64, 085201 (2001). [1.10] W. Brutting, S. Berleb, and A. G. Muckl, “Device physics of organic light emitting diodes based on molecular materials,” Org. Electron. 2, 1 (2001). [1.11] P. S. Davids, I. H. Campbell, and D. L. Smith, “Device model for single carrier organic diodes,” J. Appl. Phys. 82, 6319 (1997). [1.12] D. L. Scharfetter, and H. K. Gummel, “Large-signal analysis of a silicon read diode oscillator,” IEEE Trans. Electron Device ED-16, 64 (1969). [1.13] B. Masenelli, E. Tutis, M. N. Bussac, and L. Zuppiroli, “Numerical model for injection and transport in multilayers OLEDs,” Synth. Met. 122, 141 (2001). [1.14] E. Tutis, M. N. Bussac, B. Masenelli, M. Carrard, and L. Zuppiroli, “Numerical model for organic light-emitting diodes,” J. Appl. Phys. 89, 430 (2001). [1.15] J. C. Scott, and G. G. Malliaras, “Charge injection and recombination at the metal and organic interface,” Chem. Phys. Lett. 299, 115(1999). [1.16] S. J. Martin, A. B. Walker, A. J. Campbell, and D. D. C. Dradley, “Electrical transport characteristics of single layer organic devices from theory and experiment,” (to be submitted to J. Appl. Phys.). [2.1] P. S. Davids, I. H. Campbell, and D. L. Smith, “Device model for single carrier organic diodes,” J. Appl. Phys., 82, 6319 (1997). [2.2] H. Meyer, D. Haarrer, H. Naarmann, and H. H. Hohold, “Trap distribution for charge carriers in poly (paraphenylene vinylene) (PPV) and its substituted derivative DPOP-PPV,” Phys. Rev. B 52, 2587 (1995). [2.3] V. N. Abakumov, V. I. Perel, and I. N. Yassievich, in Nonradiative Recombination in Semiconductors (North-Holland, Amsterdam, 1991). [2.4] S. M. Sze, Physics of semiconductor devices (Murray Hill, New Jersey, 1969). [2.5] C. C. Lee, M. Y. Chang, Y. D. Jong, T. W. Huang, C. S. Chu, and Y. Chang, “Numerical simulation of electrical and optical characteristics of multilayer organic light-emitting devices,” J. J. Appl. Phys. 43, 7560 (2004). [2.6] D. A. Neamen, Semiconductor Physics and Devices (The Mcgraw-Hill Companies, Inc, 1997). [2.7] J. Staudigel, M. Stößel, F. Steuber, and J. Simmerer, “A quantitative numerical model of multilayer vapor-deposited organic light emitting diodes,” J. Appl. Phys. 86, 3895 (1999). [2.8] I. D. Parker, “Carrier tunneling and device characteristics in polymer light-emitting diodes,” J. Appl. Phys. 75, 1656 (1994). [2.9] B. Ruhstaller, S. A. Carter, S. Barth, H. Riel, W. Riess, and J. C. Scott, “Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes,” J. Appl. Phys. 89, 4575 (2001) [2.10] S. Selberherr, Analysis and Simulation of Semiconductor Device (Springer-Verlag Wien New York, 1984). [2.11] D. L. Scharfetter, and H. K. Gummel, “Large-signal analysis of a silicon read diode oscillator,” IEEE Trans. Electron Device ED-16, 64 (1969). [2.12] R. L. Burden, and J. Douglas, Numerical Analysis (PWS-KENT Publishing Company, Boston) [2.13] A. Yoshii, H. Kitazawa, M. Tomizawa, S. Horiguchi, and T. Sudo, “A three-dimational analysis of semiconductor devices,” IEEE Trans. Electron. Devices 29, 184 (1982). [2.14] H. K. Gummel, “A self-consistent iterative scheme for one-diminational steady state transistor Calculations,” IEEE Trans. Electron. Device 11, 455 (1964). [2.15] O. Manck, H. H. Heimeier, and W. L. Engl, “High injection in a two-dimensional transistor,” IEEE Trans. Electron Devices, 21, 403 (1974). [3.1] S. J. Martin, A. B. Walker, A. J. Campbell, and D. D. C. Dradley, “Electrical transport characteristics of single layer organic devices from theory and experiment,” (to be submitted to J. Appl. Phys.). [3.2] B. K. Crone, P. S. Davids, I. H. Campbell, and D. L. Smith, “Device model investigation of single layer organic light emitting diodes,” J. Appl. Phys. 84, 833 (1998). [3.3] S. J. Martin, G. L. B. Verschoor, M. A. Webster, and A. B. Walker, “The internal electric field distribution in bilayer organic light emitting diodes,” Organic Electronics, 3, 129 (2002). [3.4] T. Yokoyama, H. Ishii, and Y. Ouchi, “The effect of a LiF layer on Al/LiF/Alq3 interfaces studied with electron spectrocopies,” Surface Review and Letters, 9, 425 (2002). [3.5] Z. Deng, S. T. Lee, D. P. Webb, Y. C. Chan, and W. A. Gambling, “Carrier transport in thin films of organic electroluminescent materials,” Syn. Met. 107, 107 (1999). [3.6] I. H. Campbell, and D. L. Smith, “Schottky energy barriers and charge injection in metal/Alq/metal structures,” Appl. Phys. Lett. 74, 561 (1999). [3.7] P. E. Burrows, Z. shen, V. Bulovic, D. M. McCarty, S. R. Forrest, J. A. Cronin, and M. E. Thompson, “Relationship between electroluminescence and current transport in organic heterojunction light-emitting devices,” J. Appl. Phys. 79, 7991 (1996). [3.8] B. Ruhstaller, S. A. Carter, S. Barth, H. Riel, W. Riess, and J. C. Scott, “Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes,” J. Appl. Phys. 89, 4575 (2001). [3.9] B. J. Chen, W. Y. Lai, Z. Q, Guo, C. S. Lee, S. T. Lee, and W. A. Gambling, “Electron drift mobility and electroluminescent efficiency of tris(8-hydroxyquinolinolato) aluminum,” Appl. Phys. Lett. 75, 4010 (1999). [3.10] D. Liu, C. G. Zhen, X. S. Wang, D. C. Zou, B. W. Zhang, and Y. Cao, “Enhancement in brightness and efficiency of organic electroluminescent device using novel N,N-di(9-ethylcarbaz-3-yl)-3-methylaniline as hole injection and transporting material, ” Syn. Met. 146, 85 (2004). [3.11] B. Chen, C. S. Lee, S. T. Lee, P. Webb, Y. C. chan, W. Gambling, H. Tian, and W. Zhu, “Improved time-of-flight technique for measuring carrier mobility in thin films of organic electroluminescent materials,” J. J. Appl. Phys. 39, 1190 (2000). [3.12] H. Fong, K. Jun, and S. So, “Extrinsic electron traps in tris(8-hydroxyquinoline) aluminum,” J. J. Appl. Phys. 41, L1122 (2000). [3.13] B. K. Crone, P. S. Davids, I. H. Campbell, and D. L. Smith, “Device model Investigation of bilayer organic light emitting diodes,” J. Appl. Phys. 87, 1974 (2000). [3.14] H. C. Chen, J. H. Lee, Y. W. Kiang, C. C. Yang, and Y. Chang, “Simulations on the radiation characteristics of an organic light-emitting diode,” The Fifth Pacific Rim Conference on Lasers and Electro-Optics (CLEO/PR), Taipei, Taiwan, Dec. (2003). [3.15] K. B. Kahen, “Rigorous optical modeling of multiplayer organic light-emitting diode devices,” Appl. Phys. Lett., 78, 1649 (2001). [3.16] 林典群, “High-efficiency blue organic light-emitting device and the study of the mixed-host emitting layer,” 碩士論文 (2005). [4.1] M. A. Lampert, and P. mark, Current injection in solids (Academic Press. New York, 1970). [4.2] B. Ruhstaller, S. A. Carter, S. Barth, H. Riel, W. Riess, and J. C. Scott, “Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes,” J. Appl. Phys. 89, 4575 (2001). [4.3] C. C. Lee, Y. D. Jong, P. T. Huang, Y. C. Chen, P. J. Hu, and Y. Chang, “Numerical simulation of electrical model of organic light-emitting devices with fluorescent dopant in the emitting layer,” J. J. Appl. Phys. 44, 8147 (2005). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/34902 | - |
| dc.description.abstract | 在本篇論文中，我們建立一個程式來模擬有機電激發光元件的電氣特性。這個程式的基礎是載子漂移和擴散模型，該模型考慮：（1）與電場相關的載子遷移率，（2）載子由金屬電極注入有機層或於有機層間遷移，（3）載子在有機層傳輸及復合。首先我們使用該程式來模擬文獻中單載子元件的電流電壓特性並得到相同的趨勢。接下來我們使用該程式來模擬異質接面元件和混合層元件的電性特性，模擬的結果和實驗量測的結果有相同的趨勢。最後我們使用光學模擬程式來模擬異質接面元件和混合層元件的光學特性，藉由結合光學模擬的結果和電性模擬的結果，來幫助我們來判斷不同比例的混合層元件中發光區的位置。 | zh_TW |
| dc.description.abstract | In this thesis, we demonstrate a numerical model for electrical simulation of organic light-emitting devices (OLEDs). This calculation is based on the drift-diffusion model that contains charge carrier drift with field dependent mobility, thermionic emission, heterojunction interface and recombination process. First we got the same results of the current-voltage characteristics published in literatures. Then we used our program to fit the electrical characteristics of our OLEDs, which includes conventional heterojunction (HJ) and mixing-host (MH) devices. Similar trends are obtained between the simulation and experiment results. Finally an optical simulation program was used to model the optical characteristics of HJ and MH devices which help to define the recombination zone in MH devices. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T06:36:31Z (GMT). No. of bitstreams: 1 ntu-94-R91941032-1.pdf: 976432 bytes, checksum: 18624ced6082632e42b876d0bffbc6a8 (MD5) Previous issue date: 2005 | en |
| dc.description.tableofcontents | Chapter 1 Introduction 1
1.1 Introduction of OLED 2 1.2 Fundamental mechanisms of carrier injetion and transport in an OLED 5 1.3 Review of the electrical simulation model of an OLED 6 1.4 Motivation 11 1.5 Thesis Organization 12 References 18 Chapter 2 Theoretical Formulation 21 2.1 Drift-diffusion model 21 2.2 Carrier injection in OLED 23 2.3 Numerical method 26 2.3.1 Discretized method 27 2.3.2 Gummel's iteration method 30 References 34 Chapter 3 Simulation Results and Dicussions 37 3.1 J-V characteristics of an ITO/PPV/Al device 37 3.2 Bipolar devices 39 3.3 Fitting experimental device characteristics 40 3.3.1 Heterojunction (HJ) devices 41 3.3.2 Mixed layer devices 43 References 76 Chapter 4 Summary and Future Works 80 References 86 | |
| dc.language.iso | en | |
| dc.subject | 有激電機發光元件 | zh_TW |
| dc.subject | OLED | en |
| dc.title | 有機電激發光元件之電性模擬 | zh_TW |
| dc.title | Electrical Simulation of Organic Light-emitting Devices | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 94-1 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 吳志毅,林晃嚴,邱奕鵬 | |
| dc.subject.keyword | 有激電機發光元件, | zh_TW |
| dc.subject.keyword | OLED, | en |
| dc.relation.page | 86 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2005-12-14 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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