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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33358完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林浩雄(Hao-Hsiung Lin) | |
| dc.contributor.author | Chien-Ming Wu | en |
| dc.contributor.author | 吳建民 | zh_TW |
| dc.date.accessioned | 2021-06-13T04:36:21Z | - |
| dc.date.available | 2007-01-01 | |
| dc.date.copyright | 2006-07-21 | |
| dc.date.issued | 2006 | |
| dc.date.submitted | 2006-07-19 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33358 | - |
| dc.description.abstract | 本論文以k．p法來研究砷化銦/砷化鎵量子結構(量子井、量子點)之電子結構。在價電帶的部分，我們採用四能帶的Luttinger k．p 理論，而導電帶的部分，我們採用單能帶的等效質量法。於應變(strain)部分，則是採用由Andreev et al.提出之應變張量於傅立葉空間中的解析解。於數值方法部分，我們採用較簡單的平面波展開法，我們可計算出量子結構於單載子情況下之能階，以及其波函數。而且我們根據單粒子電子結構的計算結果，進一步的計算單激子(exciton)之束縛能。
我們所採用的數值模擬方法，可運用於成長在(001)方向及(111)方向之量子井，和成長在(001)方向之量子點與帽層(capping layer)成份不同於位能障(barrier)之量子點。我們在計算時可考慮系統所受之應變以及壓電場，於位能障與量子點(量子井)界面之界面擴散(interdiffusion)效應也可納入我們的計算。並且把我們的模擬結果與實驗量測結果作個比較，有助於了解以砷化銦鎵為帽層之量子點基態發光波長紅移之現象。 | zh_TW |
| dc.description.abstract | In this thesis, we use k．p theory to study the electronic structure of InAs/GaAs nanostructure, such as quantum well and quantum dot. We present a numerical calculation to calculate the single particle properties of conduction electrons and valence holes of the strained quantum wells (QWs) and quantum dots(QDs), calculated by using one-band effective mass and four-band Luttinger theories, respectively. In the calculation for strain in dots, we adapt the analytic solution of strain tensor in the Fourier representation. In the numerical implementation, we take the plane wave basis to expand the single-particle wave function, and diagonalize the strained Hamiltonian matrix employing the “ARPACK” algorithm. Finally, we can calculate the exciton binding energy from the wave function we obtained.
Our program is applied to two case studies: (001)、 (111)-orientated InGaAs/GaAs QWs and InAs/GaAs self-assembled QDs with InGaAs or GaAs capping layer. In the (111)-orientated QW, the piezoelectric effect reduces the transition energy. We study the InAs QD with InGaAs capping layer and we can find that the transition energy of InAs dots is red shift. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T04:36:21Z (GMT). No. of bitstreams: 1 ntu-95-R93941027-1.pdf: 4534892 bytes, checksum: 4554f969adb3b8980cf55b4cc23f9446 (MD5) Previous issue date: 2006 | en |
| dc.description.tableofcontents | 摘要....................................................Ⅰ
Abstract................................................Ⅲ 目錄....................................................Ⅴ 附表索引.................................................Ⅶ 附圖索引.................................................Ⅷ 第一章 序論...............................................1 第二章 原理...............................................7 2.1 k．p 原理............................................7 2.1.1 單能帶模型(One-band model)..........................9 2.1.2 四能帶模型(4-band Luttinger model)..................10 2.2 封包函數近似法(Envelope function approximation)........12 2.3 應變(Strain)..........................................13 2.3.1 量子井中的變 ........................................14 2.3.2 格林函數(Green`s function)..........................15 2.3.3 應變張量的傅立葉轉換..................................18 2.3.4 Strain Hamiltonian.................................19 2.4 (111)方向的Hamiltonian ...............................20 2.5 壓電效應(Piezoelectric effect)........................22 2.5.1 量子井中的壓電場.....................................22 2.5.2 量子點中的壓電效應....................................24 第三章 方法................................................25 3.1量子井.................................................26 3.2量子點.................................................29 3.3介面擴散(Interdiffusion)...............................31 3.4量子點之分析............................................33 3.4.1 基態單基底之分析.....................................34 3.4.2 Px、Py軌域能態之分析................................35 3.5材料參數...............................................36 第四章 結果與討論..........................................42 4.1量子井之模擬...........................................42 4.2量子點中的應變分佈......................................46 4.3量子點之電子結構........................................48 4.3.1 激子(exciton) ......................................48 4.3.2 InAs量子點..........................................50 4.3.3 InAs/InGaAs量子點...................................52 第五章 結論...............................................72 附錄......................................................73 附錄 A QD特徵函數........................................73 附錄 B 應變張量(Strain tensor)的傅立葉轉換.................76 附錄 C 材料參數...........................................81 參考文獻..................................................83 | |
| dc.language.iso | zh-TW | |
| dc.subject | 砷化銦 | zh_TW |
| dc.subject | 量子點 | zh_TW |
| dc.subject | 應變張量 | zh_TW |
| dc.subject | 砷化銦鎵 | zh_TW |
| dc.subject | quantum dot | en |
| dc.subject | InGaAs | en |
| dc.subject | strain | en |
| dc.subject | InAs/GaAs | en |
| dc.title | 以k．p法研究砷化銦/砷化鎵之奈米結構 | zh_TW |
| dc.title | Studies of the Electronic Properties of InAs/GaAs Nanostructure using k．p Method | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 94-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 鄭舜仁(Shun-Jen Cheng),張文豪(Wen-Hao Chang) | |
| dc.subject.keyword | 量子點,應變張量,砷化銦鎵,砷化銦, | zh_TW |
| dc.subject.keyword | InAs/GaAs,quantum dot,strain,InGaAs, | en |
| dc.relation.page | 87 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2006-07-20 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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