以光致電化學蝕刻法在p型氮化鎵上製作次微米分佈式布拉格反射鏡雷射元件

Abstract

近年來，氮化鎵材料已經引起各界廣泛的注意，尤其是在藍紫外光發光元件上的潛力。由於傳統乾式蝕刻所造成的種種材料上的破壞，我們需要尋找另一種能夠有效的提高元件效率及壽命的新製程方式。本論文討論了濕式電化學蝕刻在氮化鎵材料上的製程應用。光致電化學蝕刻反應在本文中有詳細的特性討論及可能應用的方向。另外，蝕刻的晶格特性也一併的在本文中被探討。分散式布拉格反射鏡雷射二極體亦成功的由濕式蝕刻的方式製作出來。元件的光學特性分析一併再論文中有詳細的描述，並與ICP-RIE製作出的元件做一比較。詳細的理論在論文中亦有提及。最後，可能的應用及發展再為後一章有概略的介紹以及本篇論文的結論。

In the last decades, gallium nitride materials have drawn much attention and have great potential for the UV-Blue light emitting devices. Due to the disadvantages such as material damages in dry etch, new fabrication processes are needed to enhance the efficiency and lifetime of light emitting devices. This thesis explores the use of wet chemical etching technique as processing tool for GaN–based semiconductors. The general properties of the photo-electro-chemical (PEC) etching have been inspected and described in detail for application purpose. Crystallographic etching properties were presented and provided a useful route to different kinds of application. The blue laser diode with distributed Bragg reflectors (DBR) was successfully obtained by the PEC method. The fabricated devices were analyzed with optically pumped experiment apparatus , and compared with the same devices fabricated by ICP-RIE . Theoretical investigation of these devices have been proposed and demonstrated in the same thesis. The general conclusions and possible applications in the future were discussed in the last chapter of this work.