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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33161完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳文中 | |
| dc.contributor.author | Kuo-Chiang Shang | en |
| dc.contributor.author | 商國強 | zh_TW |
| dc.date.accessioned | 2021-06-13T04:27:22Z | - |
| dc.date.available | 2006-07-27 | |
| dc.date.copyright | 2006-07-27 | |
| dc.date.issued | 2006 | |
| dc.date.submitted | 2006-07-20 | |
| dc.identifier.citation | [1] L. B. Coleman, M. J. Cohen, D. J. Sandman, F. G. Yamagishi, A. F. Garito, and A. J. Heeger, “superconducting fluctuations and the peierls instability in an organic solid,” Solid State Communacations, vol. 12,p.1125 (1973)
[2] M. Pope, H. P. Kallmann, and P. Magnante, “Electroluminescence in organic crystals,” Journal of Chemistry and Physics, vol. 38, p.2042 (1963) [3] W. Helfrich and W. G. Schneider, “Recombination radiation in anthracene crystals,” Physical Review Letters, vol. 14, p.229 (1965) [4] Z. Bao, A. Dodabalapur, and A. Lovinger, “Soluble and processable regioregular poly(3-hexylthiophene) for thin-film field-effect transistor applications with high mobility” Applied Physics Letters, Vol. 69, p.4108 (1996) [5] H. Sirringhaus, N. Tessler, and R. H. Friend, “Integrated optoelectronic devices based on conjugated polymers,” Science, vol. 280, p.1741 (1998) [6] Y. Y. Lin, D. J. Gundlach, S.F. Nelson, T. N. Jackson, “Stacked pentacene layer organic thin-film transistors with improved charactors, ” IEEE Electronics Device Letters, vol. 18, p.606 (1997) [7] M. Shtein, J. Mapel, J. B. Benziger, and S. R. Forrest, “Effects of film morphology and gate dielectric surface preparation on the electrical charactors of organic-vapor-phase-deposited pentacene thin film transistors ” Applied Physics Letters, vol. 81, p.268 (2002) [8] D. Knipp, R. A. Street, A. Völkel, and J. Ho, “Pentacene thin-film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport, ” Jounal of Applied Physics, vol.93, p.347 (2003) [9] C. K. Chiang, C. R. Fincher, Y. W. Park, A. J. Heeger, H. Shirakawa, E. J. Louis, S.C. Gau, and A. G. MacDiarmind, “Electrical conductivity indoped polyacetylene,” Physical Review Letters, vol. 39, p.1098 (1977) [10] Y. Jang, D. H. Kim, Y. D. Park, J. H. Cho, M. Hwang, and K. Cho, “Influence of the dielectric constant of a polyvinyl phenol insulatoron the field-effect mobility of a pentacene-based thin-film transistor, ” Applied Physics Letters, vol. 87, 152105 (2005) [11] M. H. Yoon, A. Facchetti, C. E. Stern, and T. J. Marks, “ Fluorocarbon- Modified Organic Semiconductors : Molecular Architecture, Electronic, and Crystal Structure Tuning of Arene-versus Fluoroarene-Thiophene Oligomer Thin-Film Properties, ” JACS. America. Chemistry. Society vol. 128, No. 17 (2006) [12] S. K. Volkman, S. Molesa, B. Mattis, P. C. Chang, and Vivek Subramanian, “Inkjetted Organic Transistors using a Novel Pentacene Precursor, ” Material Research Society, vol. 769 (2003) [13] J. Veres, S. Ogier, and G. Lloyd, “Gate Insulator in Organic Field-Effect Transistors, ” Cheical. Mateial, vol. 16, p.4543 -4555 (2004) [14] S. Molesa, D. R. Redinger, D. C. Huang, and Vivek Subramanian, “High-quality inkjet-printed multilevel interconnects and inductive components on plasticfor ultra-low-cost RFID applications, ” Material Research Society, vol. 769 (2003) [15] J. A. Lim, J. H. Cho, Y. D. Park, D. H. Kim, M. Hwang, and K. Cho, “Solvent effect of inkjet printed source/drain electrodes on electrical properties of polymer thin-film transistors, ” Applied Physics Letters, vol. 88, 082102 (2006) [16] Y. Liu, T. Cui, and Kody Varahramyan, “ All-polymer capacitor fabricated with inkjet printing technique, ” Solid-State Electronics, Vol 47, p.1543-1548 (2003) [17] Z. Liu, Y. Su, and K. Varahramyan, ”Inkjet Printed Silver Conductors Using Silver Nitrate Ink and Their Electrical Contacts with Conducting Polymers, “ Thin Solid Films, vol. 478, p.275 (2005) | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/33161 | - |
| dc.description.abstract | 目前產業上的電子元件、IC晶片與印刷電路板的製作方式主要都是以半導體製程為主，包含了曝光顯影、化學蝕刻、電鍍、高溫長晶和薄膜沉積等製程。雖然這樣的製程方式已經發展的相當成熟，並且不斷有新的突破，但他仍然有先天上的缺點存在。
半導體製程的方式往往步驟繁雜，完成一片IC晶圓就得花上數百道的製程，因而降低了產品的良率。並且在製程中，許多步驟對於材料來說都相當浪費，像是塗佈旋轉、薄膜沉積等，製作在元件上的材料與所使用的材料比例相當小，也因此大幅增加了製程的成本。 有鑑於此，噴墨製程的發展就相當具有潛力，只要能夠適當的處理材料可溶性，找到適當的溶劑，維持材料原有的半導體特性，配合基板的控制及自動化的噴墨控制系統，便可獲得精準且迅速的製程。在製程步驟來說，單一的噴墨方式搭配溶液處理與其他溶液製程，步驟相當簡單，可大幅改善產品良率的問題；並且由於噴墨先天的可即時性修改特性，也大大的增加了製程的彈性。而材料上的使用，噴墨製程可以完全的將材料運用於元件上，不會造成浪費而減省了製程的成本。 此外，噴墨所需的工作環境需求相對半導體製程更為降低，不需高的真空度與高溫環境，對於設備的條件與環境的潔淨狀況需求更為簡易。尤其是噴墨只需低溫製程的高度優勢，能夠將其應用與軟性電子基板上，由於塑膠基板對於溫度的忍耐度不高，因此噴墨製程對於可撓性電子產品，像是軟性螢幕、RFID TAG等發展上，將更具有潛力。 | zh_TW |
| dc.description.abstract | Semiconductor manufacturing process is the main fabricating method for today’s electronic device, such as IC chips and motherboards of personal computers. Although semiconductor manufacturing process is highly matured nowadays, there is still some inherent deficiency.
The way to semiconductor manufacturing process usually contains many fabricating steps, which limited its throughput in many cases. Furtheremore, too much material was wasted during the fabrication process, for example, spin-coating, and thin film epitoxy, increases the costs. It is based on the above-mentioned discussions that to develop an inkjet printing process to print semiconctoring material becomes more and more attractive. All solution-based material can be used in an automatically manufacturing inkjet printing system, and fortunately, preparation of solution based semiconductoring material is very easy. In addition, inkjet printing system eliminates the waste of material with high patterning precision without the help of mask, which potentially brings us a very low cost and easily adaptable fabricating process. Besides the virtue of low material cost, the inkjet manufacturing process requires less stringent fabricating environment, which may include lower vacuum condition and lower temperature condition. With the ease of adaption to any environment, it’s possible to design some new fabricating methodology and associated instrument with lower energy consumtion.Since plastic substrates are easily damaged by heating, the low temperature inkjet printing process thus exhibits the potentials to various applications such as plastic displays and flexible RFID tags, and so on. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T04:27:22Z (GMT). No. of bitstreams: 1 ntu-95-R93525012-1.pdf: 4931564 bytes, checksum: 01363f044b8c05161139ebcd05877734 (MD5) Previous issue date: 2006 | en |
| dc.description.tableofcontents | 致謝 i
中文摘要 iii Abstract v 目錄 vii 圖目錄 x 表目錄 xvi 第 1 章 緒論 1 1-1 前言與研究動機 1 1-2 文獻回顧 3 1-3 論文架構 7 第 2 章 全有機噴墨電路系統之理論與架構 9 2-1 有機小分子、高分子材料 9 2-1-1 有機導體材料 10 2-1-2 有機介電材料 13 2-1-3 有機半導體材料 15 2-2 有機元件原理與介紹 16 2-2-1 有機電阻元件 16 2-2-2 有機電容元件 18 2-2-3 有機場效電晶體(OFET)元件 20 2-3 溶液有機製程 26 2-3-1 咖啡環現象 26 2-3-2 表面成膜性 27 第 3 章 噴墨系統原理與介紹 30 3-1 噴頭部份 30 3-1-1 壓電噴嘴原理與訊號 30 3-1-2 資料截取卡與壓電噴頭訊號 35 3-1-3 不同溶液與訊號關係 37 3-2 壓力控制與馬達運動部份 38 3-2-1 壓力控制 38 3-2-2運動控制卡與馬達動作程序 40 3-3多噴頭系統 44 3-3-1 多噴頭系統架構 44 3-3-2 噴頭校正對位與馬達運動關係 45 3-3-3 加熱烘烤裝置 48 3-3-4 人性化多噴頭系統軟體介面 51 第 4 章 全有機全噴墨電子元件製作過程 56 4-1 單噴頭控制與電阻 56 4-2 多噴頭系統與電容 59 4-2-1 單絕緣層電容 59 4-2-2 第一個全有機全噴墨電容 63 4-2-3 親疏水結構設計減少絕緣層厚度 66 4-3 半導體材料與全有機電晶體 68 4-3-1 第一個全有機全噴墨場效電晶體 68 4-3-2 氧氣與濕度影響 71 第 5 章 量測方法與實驗結果分析 74 5-1 量測儀器介紹 74 5-2 電阻元件結果分析 81 5-2-1 噴墨層數L參數與電阻關係 81 5-2-2 加入DMSO的影響 84 5-2-3 衛星墨滴 88 5-3 電容元件結果分析 89 5-3-1 單雙層絕緣層電容與結構抗疏水設計電容結果 89 5-3-2絕緣層裂縫漏電流測試 97 5-4場效電晶體元件結果分析 99 5-4-1 半導體P3HT溶液製程場效電晶體 99 5-4-2 半導體Pentacene蒸鍍製程場效電晶體 105 5-4-3 與無機底端結構的場效電晶體比較 109 5-4-4 全氮氣環境製程之評估 113 第 6 章 結論與未來展望 116 6-1 結論 116 6-2 未來展望 118 6-2-1 元件品質再改善 119 6-2-2 全有機全噴墨電路嚐試製作 121 參考文獻 123 | |
| dc.language.iso | zh-TW | |
| dc.subject | 漏電流 | zh_TW |
| dc.subject | 有機 | zh_TW |
| dc.subject | 噴墨 | zh_TW |
| dc.subject | 絕緣層 | zh_TW |
| dc.subject | P3HT | en |
| dc.subject | PVP | en |
| dc.subject | dielectric | en |
| dc.subject | Pentacene | en |
| dc.title | 創新噴墨系統在全有機電子元件之研發與應用 | zh_TW |
| dc.title | Development and application of inkjet system in all organic electronic devices | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 94-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李世光,許覺良,黃漢邦,蔡進發 | |
| dc.subject.keyword | 有機,噴墨,絕緣層,漏電流, | zh_TW |
| dc.subject.keyword | Pentacene,P3HT,PVP,dielectric, | en |
| dc.relation.page | 124 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2006-07-22 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
| 顯示於系所單位： | 工程科學及海洋工程學系 | |
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