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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/32307完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 彭隆瀚 | |
| dc.contributor.author | Jen-Cheng Chang | en |
| dc.contributor.author | 張仁誠 | zh_TW |
| dc.date.accessioned | 2021-06-13T03:41:55Z | - |
| dc.date.available | 2021-07-28 | |
| dc.date.copyright | 2011-08-10 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-07-28 | |
| dc.identifier.citation | H. R. Wu, Y. W. Wang, and M. P. Houng, “Liquid Phase Deposited SiO2 on GaN and Its Application to MOSFET”, Thesis For Master of Science, Department of Electrical Engineering, National Cheng Kung University, 2001.
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Good results and great expectations, ” Compound Semiconductors 1996, pp. 25-31, 1997. S. J. Pearton, F. Ren, A. P. Zang, and K. P. Lee, “Fabrication and performance of GaN electronic devices,” Mater. Sci. Eng., vol. 30, pp. 55-56,Dec. 2000. T. P. Chow, and R. Tyagi, “Wide bandgap compound semiconductors for superior high-voltage unipolar power devices,” IEEE Trans. Electron Devices., vol. 41, no. 8, pp.1481-1483,Aug. 1994. F. A. Ponce, “Group III Nitride Semiconductor Compounds Physics and Applications,” Oxford University Press, pp.123-133, 1998. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 85, no. 6, pp. 3222-3233,Mar. 1999. R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Ambacher, and M. Stutzmann, “Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire,” J. Appl. Phys., vol. 87, pp. 3375-3380,Apr. 2000. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, “Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” J. Appl. Phys. vol. 87. pp. 334-344,Jan. 2000. I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck, and U. K. Mishra, “Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy,” J. Appl. Phys. vol. 86, pp. 4520-4526,Oct. 1999. 金胤軒, “氮化鋁鎵/氮化鎵金氧半高電子遷移率場效電晶體之製作與特性研究”,國立台灣大學光電工程研究所碩士論文, 2007. D. A. Neamen, “Semiconductor Physics and Devicess,” Third Edition, McGraw-Hill, University of New Mexico, pp.395-398, 2005 T. C. Shen, G. B. Gao, and H. Morkoc, “Recent Developments in Ohmic Contacts to III-V Compound Semiconductors,” J. Vac. Sci. Tech., vol. 10, pp. 2113-2132,Sep. 1992. R. E. Williams, “Galliun Arsenide processing Techniques,” chapter 11, pp.225-253,1984. 許旻棟, “高頻應用之氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體之製作與特性研究, ”國立台灣大學光電工程研究所碩士論文, 2009. D. K. Schroder, “Semiconductor material and device characterization,” Wiley Interscience , New York, pp.133, 1998. 李嗣涔, 管傑雄, 孫台平, 半導體元件物理, 三民書局, 臺北市. pp.61, 1995. 黃立賢, “以光電化學氧化法成長氮化鋁鎵/氮化鎵金屬-氧化物-半導體高速電子移動率場效電晶體閘極氧化物之製作與研究”,國立成功大學微電子工程研究所博士論文, 2009. D.A. Stocker,and E.F.Schubert, “Crystallographic wet chemical etching of GaN,” Appl. Phys. Lett., vol. 73, no. 18, pp. 2654-2656,Nov. 1998. M. Itoh, T. Kinoshita, C. Koike, M. Takeuchi, K. Kawasaki, and Y. 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Kishimoto, and K. Maezawa, “Current collapse in AlGaN/GaN HEMTs investigated by electrical and optical characterizations,” Phys.Stat. Sol.(a), vol. 194, no. 2, pp. 447-451,Oct. 2002. L .Shen “Advanced Polarization-Based Design of AlGaN/GaN HEMTs,” University of California Santa Barbara, 2002. Y. Ando, Y. Okamoto, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, and M. Kuzuhara, “12 W/mm recessed-gate AlGaN/GaN heterojunction field-plate FET,” IEEE IEDM, pp. 23.1.1-23.1.4, 2003. Y. Okamoto, Y. Ando, T. Nakayama, K. Hataya, H. Miyamoto, T. Inoue, M. Senda, K. Hirata, M. Kosaki, N. Shibata, and M. Kuzuhara, “High-power recessed-gate AlGaN-GaN HFET with a field-modulating plate,” IEEE Trans. Electron Devices, vol. 51, no. 12, pp. 2217-2222,Dec. 2004. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/32307 | - |
| dc.description.abstract | 本論文主要討論兩大部分，第一為使用晶格面蝕刻法與光致電化學氧化法在氮化鋁鎵/氮化鎵結構上成長氧化鎵氧化膜，第二為氮化鋁鎵/氮化鎵金氧半高電子遷移率場效電晶體元件之製作與研究。
使用晶格面蝕刻法在氮化鋁鎵/氮化鎵上製作平滑側壁並使用光致電化學氧化法成長氧化鎵氧化膜，利用SEM與AFM量測結果，觀察與討論氧化鎵氧化膜之品質。 另外，本研究參考傳統歐姆接觸製程，設計元件的歐姆接觸，並利用傳輸線模型(Transmission line model，TLM)，濺鍍金屬鈦/鋁/鈦/金(15 nm/100 nm/60 nm/200 nm)，在825度60秒的熱退火條件下，製作出2.1627*10-6Ω-cm2的歐姆接觸特徵電阻值，並改良電晶體元件結構為奈米線之高台；再應用光致電化學氧化法，即在氮化鋁鎵/氮化鎵表面生成氧化物，藉此得到自我鈍化的作用。當閘極偏壓為2V，閘極長度為2μm時，我們調變汲極與源極間距為8μm、6μm及4μm，進行直流飽和電流、轉導增益以及高頻特性分析。實驗結果發現，縮短間距不但可提升直流特性，並可增加截止頻率由原來的27.8GHz提升至28.6GHz。此外，本研究濺鍍二氧化矽保護層使漏電流從10-4A減少到10-10A，並將汲極與源極間距縮為2μm，使截止頻率提高至30GHz，最後，本研究對其電流崩塌效應做討論。 | zh_TW |
| dc.description.abstract | There are two issues in this thesis. The first issue is on wet chemical crystallographically etching and the growth of native gallium oxide by photoelectric chemical method(PEC method) on AlGaN/GaN substrate. The second issue is on the fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor high electron mobility field effect transistors(MOS-HEMTs).
The sidewalls of stripes became smooth and straight on AlGaN/GaN by wet chemical crystallographic etching and we found the growth of native gallium oxide on AlGaN/GaN by the PEC method. The characteristics and quality of the native oxide layer is studied by using in SEM and AFM analysis. Furthermore, we investigate the methods to improve the electric properties of AlGaN/GaN MOS-HEMTs. Using a transmission line model (TLM) analysis, we obtained an ohmic contact with specific resistance of 2.1627*10-6Ω-cm2 on the AlGaN/GaN samples patterned with a stack electrode of Ti/Al/Ti/Au (15nm/100nm/60nm/200nm) and annealed at 825℃ for 60s.We applied a new transistor structure with a nanostructure mesa and use the PEC method to form native oxide passivation oxide layers on the surfaces of AlGaN/GaN. By varying the drain-source LDS distance from 8 to 4μm with a fixed gate length LG=2μm, it not only can improve the DC properties but also increase the cut off frequency (fT) of unity current gain from 27.8GHz to 28.6GHz. Furthermore, the leakage current is decreased from 10-4A to10-10A by sputtering silicon oxide, and the fT is increased to 30GHz with LDS=2μm. Finally, we discussed the current collapse effect of the transistors. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T03:41:55Z (GMT). No. of bitstreams: 1 ntu-100-R98941070-1.pdf: 6805762 bytes, checksum: 5c9a83dd1246b37bce54bb7f2ff5b42e (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 第一章 緒論 1
1-1 研究動機 1 1-2 論文架構 4 第二章 氮化鋁鎵/氮化鎵異質結構電晶體原理 5 2-1 氮化鋁鎵/氮化鎵高電子遷移率電晶體介紹 5 2-2 金屬接觸原理 9 2-2-1 歐姆接觸原理 9 2-2-2 傳輸線模型原理 12 2-2-3 蕭特基接觸原理 14 2-3 光致電化學氧化法原理 17 2-3-1 光致電化學氧化法 17 2-3-2 實驗架構設計 19 2-4 晶格面蝕刻法 21 2-5 高頻量測原理與元件校正模型 22 2-6 電流崩塌(Current collapse)效應 26 第三章 氮化鋁鎵/氮化鎵元件製程與研究 29 3-1 元件隔離之製程 29 3-2 晶格面蝕刻之製程 31 3-3 光致電氧化膜成長製程 32 3-4 歐姆接觸製程 33 3-5 氮化鋁鎵/氮化鎵電晶體製程 34 3-5-1 元件隔離製程(Mesa isolation) 34 3-5-2 歐姆接觸製程(Ohmic contact) 36 3-5-3 閘極氧化層之製程(Gate oxide) 38 3-5-4 蕭特基閘極之製程(Gate metal) 39 3-6 奈米結構電晶體元件製程 41 3-7 閘極氧化層保護層之製程 44 3-8 氮化鋁鎵/氮化鎵電晶體高頻元件製程 46 3-8-1 表面鈍化處理(Passivation film) 47 3-8-2 高頻量測電極之製程(RF pad) 48 第四章 氮化鋁鎵/氮化鎵直流及高頻量測與討論 49 4-1 元件隔離製作 49 4-1-1 2μm隔離高台之製作與研究 49 4-1-2 500nm隔離高台之製作與研究 53 4-2 光致電化學氧化之研究 58 4-3 傳輸線模型量測與分析 61 4-4 閘極氧化層製程量測與分析 63 4-5 調變汲極與源極間距之電晶體元件量測與分析 66 4-6 光致電化學氧化之電晶體元件量測與分析 68 4-6-1 2μm高台之電晶體元件量測與分析 68 4-6-2 500nm高台之電晶體元件量測與分析 75 4-6-3 有無二氧化矽氧化層之電晶體元件量測與分析 80 4-7 電流崩塌(Current collapse)量測與分析 87 第五章 結論 91 5-1 結論 91 5-2 未來展望 93 參考文獻 95 | |
| dc.language.iso | zh-TW | |
| dc.subject | 氮化鋁鎵/氮化鎵 | zh_TW |
| dc.subject | 氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體 | zh_TW |
| dc.subject | 光致電化學氧化裝置 | zh_TW |
| dc.subject | AlGaN/GaN MOS-HEMTs | en |
| dc.subject | PEC method | en |
| dc.subject | AlGaN/GaN | en |
| dc.title | 氮化鋁鎵/氮化鎵金屬氧化物半導體高電子遷移率場效電晶體之研究 | zh_TW |
| dc.title | The Study of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Field Effect Transistors | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林晃巖,吳育任,賴志明,黃永孟 | |
| dc.subject.keyword | 氮化鋁鎵/氮化鎵,氮化鋁鎵/氮化鎵金氧半高電子遷移率電晶體,光致電化學氧化裝置, | zh_TW |
| dc.subject.keyword | AlGaN/GaN,AlGaN/GaN MOS-HEMTs,PEC method, | en |
| dc.relation.page | 99 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-07-29 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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