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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31542完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳文中 | |
| dc.contributor.author | LiAn Ding | en |
| dc.contributor.author | 丁立安 | zh_TW |
| dc.date.accessioned | 2021-06-13T03:14:31Z | - |
| dc.date.available | 2011-08-09 | |
| dc.date.copyright | 2006-08-09 | |
| dc.date.issued | 2006 | |
| dc.date.submitted | 2006-08-01 | |
| dc.identifier.citation | 1 . Stephen Y. Chou, Peter R. Krauss, and Preston J. Renstorm, “Imprint of sub-25nm vias and trends in polymers ”, Applied Physics Letters, vol. 67, 1995, pp.3114-3116
2. Lloyd R. Harriott, “Limits of Lithography”, Proceeding of the IEEE, vol.89, NO.3, March 2001, pp. 366-374 3. The National Technology Roadmap for Semiconductors, 1997 Edition, SIA Semiconductor Industry Association. 4 . S. Y. Chou, P. R. Krauss, W. Zhang, and L. Guo, L. Zhuang, “Sub-10 nm imprint lithography and applications,” Journal of Vacuum Society and Technology B, Vol. 15, pp. 2897-2904, 1997. 5. Q. Xia and S.Y. Chou, 'Ultrafast nanoimprint lithography', Proc. SPIE 5725, 180-187 (2005). 6. S. C. Johnson, T. C. Bailey, M. D. Dickey, B. J. Smith, E. K. Kim, A. T. Jamieson, N. A. Stacey, J. G. Ekerdt, C. G. Willson, D. P. Mancini, W. J. Dauksher, K. J. Nordquist, and D. J. Resnick, “Advances in Step and Flash imprint lithography,” Proceedings of SPIE, Vol. 5037, pp. 197-202, 2003. 7. T. Bailey, B. J. Smith, B. J. Choi, M. Colburn, M. Meissl, S. V. Sreenivasan, J. G. Ekerdt, and C. G. Willson, “Step and flash imprint lithography: defect analysis,” Journal of Vacuum Society and Technology B, Vol. 19, pp. 2806-2810, 2001. 8. Younan Xia and George M. Whitesides Department of Chemistry and Chemical Biology, Harvard University, Cambridge,”SOFT LITHOGRAPHY”, Proceeding of the IEEE, vol.77, NO.2, March 2000, pp. 127-135. 9. James E. Kloeppel, Physical Sciences Editor “Soft lithography used to fabricate transistors on curved substrates”, Proc. SPIE 3122 , 56-59 (2000). 10. Park, Min J.; Choi, Won M.; Park, O.O “Cell-micropatterning by micromolding in capillary technique based on UV polymerization” Proceedings of the SPIE, Volume 6036, pp. 351-358 (2006). 11. Stephen Y. Chou, Peter R. Krauss and Preston J. Ranstrom “Nanoimprint Lithography ”, Journal of Vacuum Science & Technology B 14(6), 1996. 12. Stefan Sinzinger, Jurgen Jahns “Microoptics” , 1996 13. T. Bailey, B. J. Smith, B. J. Choi, M. Colburn, M. Meissl, S. V. Sreenivasan, J. G. Ekerdt, and C. G. Willson, “Layer-to-Layer alignment for step and flash imprint lithography” , Journal of Vacuum Society and Technology B, Vol. 19, pp. 2806-2810, 2001. 14. Hua Tan , Linshu Kong, Mingtao Li, Colby Steere and Larry Koecher, ”Current status of nanonex nanoimprint solutions” Nanonex corporation, Monmouth Junction, NJ, USA 08552 15. 陳釧鋒, “奈米轉印製程與設備發展現況介紹”, 機械工業雜誌255期 16. D L White, O R Wood Ⅱ, “Novel alignment system for imprint lithography ”, Journal of Vacuum Science & Technology B, vol. 18, 2000, pp.3552-3556 17. C.-f Chen, R.L. Engelstad, and E.G. Lovell, “Adaptive alignment of photomasks for overlay improvement”, Journal of Vacuum Science & Technology B, vol. 20, 2002, pp.3552-3556 18. Oded Kafri, ILana Glatt “The physics of moire metrology”, New York : Wiley, c1990. 19. Isaac Amidror “The theory of the Moire phenomenon”, Boston : Kluwer Academic, 1999 20. Daniel Post, Bongtae Han, Peter Ifju, “High sensitivity moire : experimental analysis for mechanics and materials”, New York : Springer-Verlag, c1994. 21. GSOLVER V2.0 Manual, Grating Solver Development Company, Allen, Texas, 1995. 22. 陳文中(2003), “創新型多功能光學顯微系統之設計與研製” ,國立台灣大學機械工程研究所博士論文,台北市,台灣 23. R.E. Fischer, Optical System Design, McGraw-Hill Companies Inc., Chap. 11, pp. 207, 2000. 24. 吳錦源(1997), “創新雷射都卜勒振動干涉儀之研製-高性能微光機電系統之量測”,國立台灣大學應用力學研究所博士論文,台北市,台灣 25. 袁琪葦(2005), “奈米壓印對位系統之研製:影像檢測技術與雷射干涉儀於多層壓印機台之應用”, 國立台灣大學工程科學與海洋工程研究所碩士論文,台北市,台灣 26. 吳乾埼(2001), ”繞射式光學尺系統之研製” , 國立台灣大學機械工程研究所博士論文,台北市,台灣 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31542 | - |
| dc.description.abstract | 當全球各大半導體商努力追求製造出更小線寬的晶片時,對於次世代微影製程設備的需求也逐漸增加。但是傳統紫外光顯影技術由於複雜的光源與光學系統,造成微影製程設備的成本也隨之提高。在100奈米以下線寬的需求下奈米壓印,奈米壓印提供了一個高精密度,高解析度,高產量與低成本的替代方案。但是對位精度必須達到解析度的範圍之內才能符合商業量產的需求。對位誤差主要源自於壓印過程中壓模面與晶圓面的平行度誤差,儘管如此,由於壓模面與晶圓面之間的極小間距,使得壓印對位系統的光學誤差大幅減少,並且可提升線寬的解析度。奈米壓印提供了一條已證明CD(critical dimension)可達到10奈米以下的另一路徑。但是無論是步進掃描的系統或是奈米壓印的方式,其相關定位技術仍必須一起進步以實現10奈米的尺寸之下之製程。
論文主體在於設計一個適用於奈米壓印製程的對位(alignment)光學系統,當光路調校理想的情況下,母模面與晶圓面之間的對位僅包含二維平面以及Z軸旋轉共三個自由度的調整。壓印系統之對位重點有二:其一為對位光學系統的調校,包含入射光零度入射、對焦控制以及光柵面平行度校正,其中將採用輔助的光路控制機構使之自動平行校準;其二為壓印母模與晶圓本身之二軸精密對位,論文將使用類似於目前掃描步進機的對位控制方式,使用兩段式控制 (dual-stage control),第一階段使用下層的位移平台配合傳統的對位記號與白光顯微術做微米等級的粗定位,第二階段的對位系統採用近場量測(near-field measurement)模式配合壓電致動器作奈米等級的精準對位。近場量測模式採用光柵耦合原理,以正負一階光強變化的曲線作為檢測的依據。我們將量測結果與G-solver模擬做比較,發現誤差來源主要為位移平台振動以及光柵結構缺陷,兩者只要控制得宜,系統就可以在光柵週期之內得到高靈敏度的光電訊號變化,突破傳統的對位精度限制。 | zh_TW |
| dc.description.abstract | The main subject of this thesis is to design an optical system applied to the alignment of nano-imprint lithography. Under the premise of all optical elements being well-aligned, the alignment between the mold plane and the wafer plane only involves 2-D plane and rotation of z axis. There are two emphases on the thesis. The first is the alignment procedure of the entire optical elements, including zero-degree incidence, focus control and the horizontal adjustment of grating planes.
The second emphasis is two-axis alignment setup between the mold and the wafer. A scanner-like, dual-stage control method is used . In the first stage we use the underneath position stage along with traditional alignment marks and white light microscopy to achieve micron-level coarse alignment. In the second stage, we adopt the near-field measurement along with piezo-electric actuator in the alignment system to achieve nano-range positioning. The near-field measurement is based on grating-coupled principle, using the curve of first-order light intensity variation as the alignment reference. We compare the results with G-solver simulation and found out that the error sources are primarily from vibration of the position stages and defects of the grating structure. From the experiment results, the clear signal variation within a grating pitch movement can be obtained while both factors are under control. The signal can then used for second stage fine alignment, and break the limitation of convertional optical | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T03:14:31Z (GMT). No. of bitstreams: 1 ntu-95-R93525043-1.pdf: 2403068 bytes, checksum: 856d9670d484a432df2a84b2f0cdb59a (MD5) Previous issue date: 2006 | en |
| dc.description.tableofcontents | 中文摘要 i
英文摘要 ii 目錄 iii 圖目錄 v 表目錄 ix 第1章 緒論 1 1.1 研究動機.........................................................................................................1 1.2 文獻回顧…………………………………………………………………….2 1.2.1 奈米壓印製程………………………………………………………..2 1.2.2 微影疊對技術………………………………………………………..7 1.2.3 奈米壓印疊對方式………………………………………………....10 1.3 論文架構和綱要…………………………………………………...............16 第二章 光學定位系統之原理………………………………………………………17 2.1疊紋原理……………………………………………………………………17 2.2光柵耦合效應…………………………………………………………...….20 2.3繞射式光柵原理……………………………………………………………23 第三章 系統架構與規格……………………………………………………………27 3.1 奈米壓印機台架構………………………………………………………...27 3.2 光學定位系統設計………………………………………………………...28 3.3 系統元件規格之制定……………………………………………………...32 3.3.1 光源與聚焦元件……………………………………………………32 3.3.2 聚焦物鏡的選擇……………………………………………………33 3.3.3 光柵規格……………………………………………………………35 3.3.4 電子系統……………………………………………………………36 3.3.4.1 光二極體接收器…………………………………………...36 3.3.4.2 電子信號前級放大器……………………………………...36 3.3.4.3 電子信號後級放大器與濾波器…………………………...38 3.3.4.4 類比-數位信號轉換卡……………………………………..38 3.3.5精密壓電致動平台………………………………………………….39 3.3.6光柵耦合分析與人機介面………………………………………….40 第四章 光路架設與調校…………………………………………………………....43 4.1 零度入射調校……………………………………………………………...43 4.1.1 三維繞射理論……………………………………………………....43 4.1.2 零度入射校正光路………………………………………………....45 4.2 對焦校正…………………………………………………………………...49 4.3 光柵姿態校正……………………………………………………………...51 4.4 光路調校結果……………………………………………………………...51 第五章 壓印定位系統之校驗與結果………………………………………………53 5.1 實驗方法…………………………………………………………………...53 5.2 實驗量測…………………………………………………………………...53 第六章 結論與未來展望……………………………………………………………60 6.1 結論………………………………………………………………………...60 6.2 未來展望…………………………………………………………………...60 附錄A 嚴格耦合波理論……………………………………………………………62 A.1 光柵耦合分析G-solver…………………………………………………...69 A.2 建立模擬基礎……………………………………………………………..69 附錄B 三軸精密位移平台規格……………………………………………………77 參考文獻…………………………………………………………………………….80 | |
| dc.language.iso | zh-TW | |
| dc.subject | 對位技術 | zh_TW |
| dc.subject | 奈米壓印 | zh_TW |
| dc.subject | 位移平台 | zh_TW |
| dc.subject | 近場量測 | zh_TW |
| dc.title | 奈米壓印對位光學系統之研製 | zh_TW |
| dc.title | Development of an Optical Alignment System
for Nanoimprint Lithography | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 94-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李世光,黃君偉,李佳翰 | |
| dc.subject.keyword | 奈米壓印,對位技術,位移平台,近場量測, | zh_TW |
| dc.subject.keyword | nano-imprint lithography,overlap control,precision alignment,near-field measurement, | en |
| dc.relation.page | 83 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2006-08-02 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
| 顯示於系所單位: | 工程科學及海洋工程學系 | |
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