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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳永芳 | |
| dc.contributor.author | Fu-Yu Shih | en |
| dc.contributor.author | 施甫諭 | zh_TW |
| dc.date.accessioned | 2021-06-13T02:45:31Z | - |
| dc.date.available | 2014-08-02 | |
| dc.date.copyright | 2011-08-02 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-07-31 | |
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Chen, High-Quality Graphene p-n Junctions via Resist-free Fabrication and Solution-Based Noncovalent Functionalization, Acs Nano, 5 (2011) 2051 [43]Stanford Research Systems (Revision 2.4),SR830 DSP Lock-In Amplifier Operating Manual and Programming Reference [44] Digital Instruments (Version 3.0), Scanning Probe Microscopy Training Notebook [45] Digital Instruments (Version 4.31ce), MultiModeTM SPM Instruction Manual | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/31362 | - |
| dc.description.abstract | Graphene, a two-dimensional material consisting of single-layer carbon atoms, is found to exhibit remarkably high carrier mobility. However, conventional graphene devices deposited on SiO2/Si substrates suffer from charge impurity and electron-phonon scattering. Therefore, the extrinsic transport properties of graphene are degraded. In order to minimize the effects of carrier scattering due to SiO2/Si substrates, removing the substrate beneath graphene could improve its transport properties significantly. In 2008, Philip Kim’s group at the Columbia University reported the first suspended graphene devices. They observed more intrinsic transport properties in suspended graphene devices.
Different from conventional graphene devices, we carried out resist-free method to fabricate suspended graphene devices. Experiment data shows that conductance is sub-linearly dependent on density of states at low temperature. Also, temperature dependence of resistivity exhibits approximately linear relation instead of activated behavior at high temperature (>100 K). This indicates that the remote interfacial phonon scattering due to surface phonon on SiO2 substrate is excluded by removing the substrates. Furthermore, owing to the reduced charged impurities from SiO2 substrates, the fluctuation energy of suspended graphene samples, E_F^sat≈15 meV, is much smaller than the value of non-suspended graphene samples. Our resist-free fabrication technique provides a feasible route to access the intrinsic transport properties of graphene. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T02:45:31Z (GMT). No. of bitstreams: 1 ntu-100-R98222039-1.pdf: 2590316 bytes, checksum: 74635bad6d8319babb61747bf849f2e9 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | Contents
Chapter 1 Introduction 1 Chapter 2 Paper Review: Transport Properties in Graphene 7 2.1 Scattering in graphene 7 2.1.1 Charged impurity scattering 7 2.1.2 Phonon scattering & limits of graphene on SiO2 10 2.2 Hysteresis behavior in graphene transistor devices 16 2.3 Suspended graphene 17 Chapter 3 Experiment Apparatus and Methods 25 3.1 Semiconductor Device Fabrication Processes 25 3.1.1 Lithography process and material synthesis 25 3.1.2 Etching Process 27 3.2 Fabrication of Resist-free Suspended Graphene 29 3.2.1 Electron beam lithography 29 3.2.2 Fabrication of Resist-Free Device 33 3.3 Electrical Measurement and Structure Characterization 35 3.3.1 Electrical Measurement Systems 35 3.3.2 Atomic Force Microscopy System 38 Chapter 4 Result and Discussion 41 4.1 Electronic transport analysis of suspended graphene 41 4.1.1 Effective capacitance of the periodic trench structure 41 4.1.2 Thermal Annealing 42 4.1.3 Electric field effect of suspended graphene 43 4.1.4 Analysis of temperature dependent transport 44 4.2 Atomic force Microscopy of suspended graphene 46 4.2.1 Graphene which cross by the trench partially 47 4.2.2 Graphene which cross the trench completely 48 Chapter 5 Conclusion 51 | |
| dc.language.iso | en | |
| dc.subject | 石墨烯 | zh_TW |
| dc.subject | 元件 | zh_TW |
| dc.subject | suspended graphene | en |
| dc.title | 懸浮石墨烯的製作與傳輸特性 | zh_TW |
| dc.title | Fabrication and transport properties of suspended graphene | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 王偉華,林泰源 | |
| dc.subject.keyword | 石墨烯,元件, | zh_TW |
| dc.subject.keyword | suspended graphene, | en |
| dc.relation.page | 51 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-08-01 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
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