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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳永芳(Yang-Fang Chen) | |
dc.contributor.author | Wei-Sheng Su | en |
dc.contributor.author | 蘇偉盛 | zh_TW |
dc.date.accessioned | 2021-06-13T01:41:48Z | - |
dc.date.available | 2007-07-18 | |
dc.date.copyright | 2007-07-18 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-07-11 | |
dc.identifier.citation | chapter1
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/30181 | - |
dc.description.abstract | 摘要
在這本論文中,我們使用掃描探針顯微術去研究許多半導體和壓電材料上的新發展。在這裡發現許多有趣的現象,而新的物理機制也被提出。下面是本文的一些重要結果: 1. 在這裏我們介紹及建立一個新的技術。這技術是在電子力顯微鏡上加一個光源改變表面局部的電性改變,目的就是利用電子力顯微鏡去觀察照光後材料局部的電性的變化。在這裏我們是討論氮化銦磊晶層的局部電性變化。結合原子力顯微術,我們可以發現到表面態位密度在表面的凹處較凸處為大,以及在表面有一層電子層。另外在這裏我們也發現表面態造成的巨大能帶可以與之前的文獻上吻合。在這裏我們也指出光機發電子力光譜技術是觀察局部電子躍遷一個非常強大的工具。 2. 在這裏我們成功的在氮化鎵奈米柱上將力學能轉化成電能。這個實驗是利用導電性原子力顯微術去彎曲氮化鎵奈米柱。機制是結合了壓電及半導體的特性去產生電場及電流。這個結果提供了一個新方法去將周圍環境的力學能轉化成電能,這方法可以利用去做成自我發電的奈米元件。 3. 我們結合氮化鎵本身的內建表面電場、壓電特性、電子電洞對、及外加入射發現了許多新的現象。當入射光強度增加時,我們可以觀察到光激發螢光的峰值紅移,及拉曼聲頻支的聲子頻率紅移。這個機制認為是表面電場被光機發的電子電洞對屏蔽,經由逆壓電效應,內建的應力被降低。這個內建電場的存在可以用表面電位顯微術的觀察得到證明。這些新的現象是由於奈米材料上表面占了很重的比例造成的。這些現象會是製作奈米元件的原理。 4. 最近,(Pb(Mg1/3Nb2/3)O3)0.63(PbTiO3)0.37 (PMN-37PT)被發現當他製作成一個沒有基座的結構時,他的壓電反應在電場約2kV/cm時會增加。這裏我們藉由壓電力顯微術提供了一個直接證據,這證據直接觀察到四十微米的樣品在這個電場下極化方向的轉變。實驗結果顯示他的極化方向傾向於平行樣品表面的方向。而這些平行表面的極化在1.3 kV/cm和1.9 kV/cm之間可以完全轉向。另外將這塊樣品做成懸臂形狀時的量測顯示在1.3 kV/cm和2 kV/cm有增強的現象,且最大的壓電反應為2700 pm/V。這結果跟壓電力顯微術的結果可作一個連結。而極化完全轉巷的店賞遠小於一般的薄膜結構。 | zh_TW |
dc.description.abstract | In this thesis, we have applied the powerful technique called scanning probe microscopy to investigate several newly developed semiconductors as well as piezoelectric materials. A variety of interesting phenomena have been discovered and the related physical mechanisms have also been proposed. The main features of our results are as follow:
(1) Electrostatic force Spectroscopy: Application to local electronic transitions in InN epifilms. A technique based on electrostatic force microscopy in which light is used to change the charge states of the local region in a solid is introduced and demonstrated. This technique provides a unique feature that it can be used to probe local electronic transitions of a solid in a sub-micron scale. As an illustration, it has been applied to study local electronic structure in InN epifilms. Combining with atomic force microscopy, it is found that surface state density in the dale region is larger than that of the pinnacle region, and an electron accumulation layer does exist on the surface. In addition, the magnitude of the surface band bending obtained for the regions with different surface states is consistent with the result measured by other techniques. We point out that light-induced scanning electrostatic force spectroscopy is a very useful tool to probe the local electronic transitions of a solid in a sub-micron scale with high sensitivity. (2) Generation of electricity in GaN nanorods induced by piezoelectric effect. Conversion of mechanical energy into electric energy has been demonstrated in GaN nanorods. The measurement was achieved by deflecting GaN nanorods with a conductive atomic force microscope PtIr tip in contact. The mechanism relies on the coupling between piezoelectric and semiconducting properties in GaN nanorod, which creates a strain field and drives the charge flow across the nanorod. The result shown here opens up a new opportunity for harvesting electricity from wasted mechanical energies in the ambient environment, which may lead to the realization of self-powered nanodevices. (3) Built-in surface electric field, piezoelectricity and photoelastic effect in GaN nanorods for nano-photonic device. Novel behaviors arise from the coupling between built-in surface electric field, piezoelectricity, electron-hole pairs, and external light beam have been observed in GaN nanorods. When optical excitation density was increased, a blueshift in the photoluminescence spectra and a redshift in the frequency of GaN A1(LO) phonon were observed. The underlying mechanism was attributed to the screening of built-in surface electric field by photoexcited carriers, and through the converse piezoelectric effect, the internal strain was reduced. The existence of built-in surface electric field in GaN nanorods has been confirmed by scanning Kelvin probe microscopy. Our results firmly establish that the photoelastic effect does exist in GaN nanorods. This finding reveals novel properties arising from the inherent large surface-to-volume ratio of nanostructures, it thus is applicable to many other nanomaterials. It also underpinns the principle for applications in nano-photonic devices. (4) Piezoelectric Enhancement and Domain Switching in PMN-PT Polycrystalline Sheets by Piezoresponse Force Microscopy. Recently it was found that the piezoelectric response of substrate-free polycrystalline (Pb(Mg1/3Nb2/3)O3)0.63(PbTiO3)0.37 (PMN-37PT) sheets increased by several fold at applied electric fields E ≧ 2 kV/cm. Here we provide direct evidence of polarization switching occurring at such electric fields through piezoresponse force microscopy on a 40 | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T01:41:48Z (GMT). No. of bitstreams: 1 ntu-96-D91222022-1.pdf: 1870515 bytes, checksum: a5a5e686dff7adc7808e473f5e5a304c (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | Contents
Chapter 1 Introduction 1.1 Introduction to Nanotechnology….………………………….………………… 1 1.2 Brief description of Scanning Probe Microscopy…..…...………………….…...3 1.3 Motivation……………………………….………….………….………………..5 1.4 Overview of this thesis…………….………………………….…………………7 Chapter 2 Basic properties of the studied materials 2.1 InN…………….………………………………….…………….........................11 2.1.1 Band structure and fundamental optical properties…………………….…12 2.1.2 Transport properties………………………………………….……………17 2.2 GaN………………….…………………..……………….………………...…..21 2.2.1 Optical and electrical properties of GaN…………………….………...21 2.3 (Pb(Mg1/3Nb2/3)O3)1-x(PbTiO3)x ………………………………........................…25 2.3.1 Piezoelectricity…………………………………………….……………25 2. 3. 2 The Basic Principle of Piezoelectricity………………………………….28 2.3.3 The perovskite structure………………………………………………….30 2. 3. 4. Domain dynamics and structure………………………………………..31 Chapter 3 Experiment 3.1 Atomic Force Microscopy………………….……………………………....…..39 3.1.1 Forces acting between the cantilever and the sample……….....................40 3.1.2 Setup of an Atomic Force Microscope……………………………….…..41 3.1.2.1 Force sensing component……………………………………...…..42 3.1.2.2 Position sensing component…………………………………….…43 3.1.2.3 Feedback component……………………………………………....45 3.1.3 Modes of Operation……………………………..………………………...47 3.2 Scanning Kelvin Microscopy………………………….………………………55 3.2.1 Second Pass Technique……………………………….……………...55 3.2.2 Scanning Kelvin microscopy (SKM)…………….………………….58 3.3 Piezoresponse Scanning Force Microscopy……………………………….......60 3. 3. 1 Operation Principle……………………………………….…………62 3. 3. 2 Spontaneous Polarization Normal to Surface……………………….64 3. 3. 3 Spontaneous Polarization Parallel to the Surface…………………...66 3.4 Raman Scattering………………………………………………………….......67 3.4.1 Principles of Raman Scattering……………………………………….67 3.5 Photoluminescence (PL) measurement……………………………….……….72 Chapter 4 Electrostatic Force Spectroscopy: Application to local electronic transitions in InN epifilms 4.1 Introduction ……………………………………………………………..…....79 4.2 Experiment…………………………………………………………….…….....81 4.3 Results and discussion…………………………………..…………..….………86 4.4 Summary………….……………………………………….……………..…….90 Chapter 5 Built-in surface electric field, piezoelectricity and photoelastic effect in GaN nanorods for nano-photonic devices 5.1 Introduction …………………………………………………………...…..…...94 5.2 Sample preparation……………………………………………………...……...96 5.3 Experimental measurements…………………………………….………...……97 5.4 Result and discussion……….…………………………………….……………97 5.5 Summary……………………………………………………………………...105 Chapter 6 Generation of electricity in GaN nanorods induced by piezoelectric effect 6.1 Introduction …………………………………….……………………..….....110 6.2 Experiment……………………………………….………………….………..111 6.3 Results and discussion…………………………………..……...………….....113 6.4 Summary………….………………………………………….……………….119 Chapter 7 Piezoelectric Enhancement and Domain Switching in PMN-PT Polycrystalline Sheets by Piezoresponse Force Microscopy 7.1 Introduction ……………………………………………………………..…...121 7.2 Sample and Experiment…………………………………….………….……..123 7.3 Results and discussion…………………………………..….………….……..125 7.4 Summary………….………………………………………………………..…131 Chapter 8 Conclusion ....................................................................................................................................135 Lists of Figures Fig. 2-1 The bandgaps of AlN, GaN, and InN as a function of lattice constants……12 Fig. 2-2 The structure of (a) wurtzite InN (h-InN) and (b) zinc blende InN (c-InN)...13 Fig. 2-3 The wurtzite InN band structure calculated using (a) density functional theory (b) linearized augmented plane wave method. EB denotes the well-known branch-point energy. The energy zero is set at the valence band maximum.……………………….…….……………………………………15 Fig. 2-4 Energy gaps of wurtzite InN and other common semionductors as a function of lattice constants. The dotted lines indicate the range of the visible spectrum. ………………….…….……………………………………….…………….16 Fig. 2-5 The velocity–field characteristics associated with wurtzite GaN, InN, AlN, and zinc-blende GaAs. In all cases, the temperature was set to 300 K and the doping concentration was set to 1017 cm-3. The critical field at which the peak drift velocity was achieved for each velocity–field characteristic is clearly marked; 140 kV/cm for GaN, 65 kV/cm for InN, 450 kV/cm for AlN, and 4 kV/cm for GaAs……………………………………………………….....…19 Fig. 2-6 The diagrams show the wurtzite structure for the Ga-face, N-face and the relation of the two lattice constants………………….…………………....22 Fig. 2-7 The diagrams show the wurtzite structure for the Ga-face, N-face and the relation of the two lattice constants…..……………..…………….………23 Fig. 2-8 Applied stress causes : (a) non-piezoelectric effect (b) and (c) piezoelectric effect………………….…….……………………………………………..28 Fig. 2-9 Schematic of the ABO3 perovskite structure…………...………….……….31 Fig. 2-10 Dependence of grains and domains of piezoelectric ceramics……………32 Fig. 3-1 The force of interaction between two atoms varies with the distance between them. Likewise, the energy is also dependent on the separation between the two atoms. ………………………………………....………………………41 Fig. 3-2 Interaction scheme of the SPM head main components.…………………...42 Fig. 3-3 Position sensing component…………………………………………...……45 Fig. 3-4 The AFM can be operated in three modes: Contact, non-contact and intermittent contact or tapping. ……………………………….................…47 Fig. 3-5 Schematic of the second pass technique…………………………………....56 Fig. 3-6 Schematic of scanning Kelvin Probe Microscopy….................………….…59 Fig. 3-7 Setup used for the piezoresponse SFM. The cantilever deformation is measured by laser deflection onto a four quadrant detector. The up/down deflection is fed into a feedback loop adjusting the static force. The ac voltage applied between the electrode and the tip results, depending on the direction of the spontaneous polarization below the tip, in oscillations of the cantilever. These are detected by the two lock-in amplifiers………………………………...................………………….……63 Fig. 3-8 Principle of the SFM measuring technique based on the inverse effect. (a) The electric field created by the voltage applied to the tip is antiparallel to the spontaneous polarization leading to a local contraction of the sample. The tip follows this movement and the reflected laser spot on the photo detector moves accordingly. (b) and (c) For a spontaneous polarization parallel to the surface a local lateral shear of the sample results (for clarity the whole crystal is sheared in the figure). These movements can also be sensed by the deflected laser beam. (b) is the side view for Ps parallel to y. (c) is the front view for Ps parallel to x …………………………………………....………………………………..64 Fig. 3-9 This spectrum shows the photoluminescence peak and the Raman phonon mode of a CdMnTe film on a GaAs substrate (Perkowitz, 1991). The diagram illustrates the much smaller Raman intensity compared with the signal from a strong PL emitter. It also shows clearly that both the PL and Raman data can be obtained with the same experimental setup. …………………………...…68 Fig. 3-10 The diagram shows the conservation rules for Raman scattering, where νi and νs are the incoming and scattered photon frequencies respectively, ki and ks are the incoming and scattered photon wave vectors respectively, while Ω and K are the phonon frequency and wave vector respectively………………………………………..…………………....…69 Fig. 3-11 The Raman spectrum of CCl4………………………………….……..…...69 Fig. 3-12 The schematic representation of photoluminescence (after R. A. Strading and P. C. Klipstein).…………………………………………….....……...73 Fig. 3-13 Illustration of the different processes that can give rise to light emission in semiconductors. (a) The band to band recombination, (b) Excitonic recombination, (c) free hole-neutral donor recombination, (d) free electron recombination with a hole on a neutral acceptor, and (e) donor-acceptor recombination.…………………………………………………….………..75 Fig. 4-1 Schematic diagram of light induced electrostatic force microscopy. A halogen lamp dispersed by triple-grating monochromator was used as the pumping light source and the light was focused onto the sample. The EFM signal is measured by a metallic tip……………………….……………………..83 Fig. 4-2 X-Ray diffraction analysis of InN films.………………….………………84 Fig. 4-3 Photoluminescence spectra of InN epifilms at room temperature. The peak energy is at 0.7 eV. ………………………………………………...…... 85 Fig. 4-4 Atomic force microscope image of the topography of the InN sample. Both the pinnacle and dale were shown clearly. ………….…………………86 Fig. 4-5 EFM signal as a function of the bias voltage for the (a) pinnacle and (b) dale regions. The contact potential of the pinnacle and dale are 0.25 eV and 0.31 eV.……………………………………………………..……87 Fig. 4-6 Band alignment of the dale and pinnacle regions. The band offset between the pinnacle and dale is 60 meV. …………………………..88 Fig. 4-7 Contact potential measured by light induced electrostatic force microscopy as a function of photon energy for the (a) dale and (b) pinnacle regions. The energy difference of the minimum in the contact potential spectra is in good agreement with the band offset of the pinnacle and dale regions in Fig. 4-6………………………….…......89 Fig. 5-1 Scanning electron microscopy images of GaN nanorods…………..…..…96 Fig. 5-2 Excitation power dependence of the photoluminescence spectra of the nanorods and epifilm………………………………..…………………….98 Fig. 5-3 Room-temperature micro-Raman spectra of the GaN nanorods under different excitation densities…………………..........................................99 Fig. 5-4 The effect of band bending on the luminescent peak energy. (a) Low excitation intensity. (b) High excitation intensity………………..…….….101 Fig. 5-5 SKPM measurement on the top of the GaN nanorod. (a) The distributions of the surface potential on the top of nanorod. (b) The distribution of the Fermi level position relative to the bottom of the conduction band on the top of the nanorod. The inset shows the top-view SEM image and scan direction…………………………………………..….……………………..102 Fig. 5-6 The relationship of the A1(LO) phonon mode and internal strain vs. excitation power…………………………………………………………………….105 Fig. 6-1 (a) Scanning electron microscopy image of the GaN nanorods. (b) The experimental setup and procedures for generating electricity by deforming a piezoelectric nanorod with a conductive atomic force microscopy (AFM) tip. The AFM scans across a nanorod in the contact mode. (c) Topography image and (d) corresponding output current image of the nanorod arrays.(e) The line profiles from the topography and output current images across a nanorod…………………………………………………..….112 Fig. 6-2 Scanning electron microscopy image of the GaN nanorods. (a) Before etching (b) After etching. (c) Schematic definition of a nanorod and the coordination system. (d) The corresponding longitudinal piezoelectricity induced electric field Ez distribution in the nanorod. (e and g) Contacts between the AFM tip and the semiconductor GaN nanorod at two reversed local contact potentials (positive and negative). (f) Reverse and forward biased Schottky rectifying behavior…………………………………...115 Fig. 6-3 The variation of current output vs. scanning speed of the bent GaN nanorod. The red line is plotted according to the characteristics of the current flow in a Schottky diode given by Eq. 6-1…………………….118 Fig. 7.1: (a) A schematic of the PFM, the correlation of the VPFM with the vertical component of the polarization and that of the LPFM with the lateral component of the polarization long the width direction of the PFM cantilever, (b) the atomic force microscopy image of the PMN-37PT freestanding film. The insert in Fig. 7-1(b) shows the region where detailed PFM measurements were carried out…………………………………………………………124 Fig. 7.2: The VPFM image of the insert of Fig. 7-1(b) at (a) 0 (b), 1.3 (c), 1.9, and (d) back to 0 kV/cm and the LPFM of the same region at (e) 0, (f) 1.3, (g) 1.9, and (h) back to 0 kV/cm………………………………………………….126 Fig. 7.3: The distribution of the VPFM (a) and that of the LPFM (b) at various DC fields……………………………………………………………………..128 Fig. 7.4: (a) VPFM and LPFM at region I and region II versus DC electric field, and (b) a schematic of the polarization reorientation evolution with DC field. Note that the corresponding DC field is labeled on the top of (a)………..129 Fig. 7.5: d31 versus DC electric field of 40 | |
dc.language.iso | en | |
dc.title | 掃描探針顯微術在半導體及壓電材料上奈米尺度的光電現象研究 | zh_TW |
dc.title | NANOSCALE ELECTRIC AND OPTICAL PHENOMENA IN SEMICONDUCTORS AND PIEZOELECTRIC MATERIALS INVESTIGATED BY SCANNING PROBE MICROSCOPY | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 黃鶯聲(Ying-Sheng Huang),梁啟德(Chi-Te Liang),林泰源(Tai-Yuan lin),沈志霖(Ji-Lin Shen) | |
dc.subject.keyword | 原子力顯微術,電力顯微術,氮化銦,氮化鎵,壓電效應,PMN-37PT,壓電力顯微術, | zh_TW |
dc.subject.keyword | AFM,EFM,InN,GaN,Piezoelectric effect,PMN-37PT,PFM, | en |
dc.relation.page | 138 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2007-07-11 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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