利用陽極氧化鋁奈米模版製造有序且等長銀奈 米線陣列

Abstract

在本篇論文中，我們利用陽極氧化的方式製造了氧化鋁奈米孔洞模板。藉由適當地調控陽極氧化的條件，孔徑與孔洞深度的比例可以達到1:1000之譜。同時，利用電化學電鍍的方式，我們可以將銀長入此奈米管陣列模板的孔洞之中。此外，我們更發展了一套新穎的方式，製造長程有序且等長的銀奈米線，進而利用氧化鋁奈米孔洞模板的厚度準確調控銀奈米線的長度。對於未來更進一步研究其奈米電性及光學性質奠定了重要的基礎。

Anodic alumina nanochannel arrays with high aspect ratio have many existing and upcoming potential applications in nanotechnology. Many researchers have tried to use anodic alumina as the template for the growth of nanowires of different materials by electrodeposition, but still facing the undesired problem of deposition non-niformity in each anodic alumina nanochannel. There are, for example, always significant statistical fluctuations in length of the formed nanowires in the anodic alumina nanochannels. To solve the above mentioned undesired problem, we have therefore developed a new way that can control the deposition of silver in each nanochannel of the anodic alumina. The length of the nanowires can be controlled precisely by the anodic alumina film thickness.