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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電子工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29139
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dc.contributor.advisor黃俊郎(Jiun-Lang Huang)
dc.contributor.authorWu-Sheng Wangen
dc.contributor.author汪戊生zh_TW
dc.date.accessioned2021-06-13T00:42:25Z-
dc.date.available2007-07-30
dc.date.copyright2007-07-30
dc.date.issued2007
dc.date.submitted2007-07-25
dc.identifier.citation[1] Ki-Seok Chung, Taewhan Kim, and C. L. Lin, “A Complete Model for Glitch Analysis in Logic Circuits,” in Proc. ASIC/SOC, 2000, pp. 137-154.
[2] M. Favalli and L. Benini, “Analysis of Glitch Power Dissipation in CMOS ICs,” in Proc. ISLPED, 1995, pp. 123-128.
[3] D. Rabe and W. Nebel, “Short Circuit Power Consumption of Glitches,” in Proc. ISLPED, 1996, pp. 125-128.
[4] P. Ruiz de Clavijo Vazquez, J. Juan-Chico, M. J. Bellido, A. Acosta, and M.Valencia,“HALOTIS: High Accuracy Logic TIming simulator with inertial and degradation delay model,” in Proc. DATE, 2001, pp. 467-471.
[5] Laung-Terng Wang, Cheng-Wen Wu, and Xiaoqing Wen, VLSI Test Principles and Architectures: Design for Testability. Morgan Kaufmann, 2006.
[6] Sung-Mo Kang and Yusuf Leblebigi, CMOS Digital Intergrated Circuits Analysis and Design second edition. McGraw-Hill, 1999.
[7] C. V. Schimpfle, S. Simon, and J. A. Nossek, “Device Level Based Cell Modeling for Fast Power Estimation,” in Proc. ISCAS, 1999, pp. 90-93.
[8] M. Hafed, M. Oulmane, and N. C. Rumin, “Delay and Current Estimation in a CMOS Inverter with an RC Load,” IEEE Trans. Computer-Aided Design, Vol. 20, pp. 80-89, January 2001.
[9] J. Qian, S. Pullela, and L. Pillage, “Modeling the “Effective Capacitance” for the RC Interconnect of CMOS Gates,” IEEE Trans. Computer-Aided Design, Vol. 13, pp. 1526-1535, December 1994.
[10] P. Israsena and S. Summerfield, “Novel Pattern-based Power Estimation Tool with Accurate Glitch Modeling,” in Proc. ISCAS, 2000, pp.721-724.
[11] V. Chandramouli, and K, A. Sakallah, “Modeling the Effects of Temporal Proximity of Input Transitions on Gate Propagation Delay and Transition Time,” in Proc DAC, 1996, pp. 617-622.
[12] X. Liu and M. C. Papaefthymiou, “A Statistical Model of Input Glitch Propagation and its Application in Power Macromodeling,” in Proc. MWSCAS, 2002, pp. 380-849.
[13] X. Liu and M. C. Papaefthymiou, “Incorporaton of Input Glitches into Power Macromodeling,” in Proc. ISCAS, 2002, pp. 846-849.
[14] G. Bernacchia and M. C. Papaefthymiou, “Analytical Macromodeling for High-Level Power Estimation,” in Proc. ICCAD, 1999, pp. 280-283.
[15] M. J. Bellido, J. Juan-Chico, P. Ruiz de Clavijo, A. J. Acosta, and M. Valencia, “Gate-Level Simulation of COMS Circuits Using the IDDM Model,” in Proc. ISCAS, 2001, pp. 483-486.
[16] M. J. Bellido-Diaz, J. Juan-Chico, A. J. Acosta, M. Valencia, and J. L. Huertas, “Logical Modelling of Delay Degradation Effect in Static CMOS Gates,” in Proc. Circuits, Devices and Systems, 2000, pp. 107-117.
[17] J. Juan-Chico, P. Ruiz de Clavijo, M. J. Bellido, A. J. Acosta, and M. Valenia, “Inertial and Degradation Delay Model for CMOS Logic Gates,” in Proc. ISCAS, 2000, pp. 459-462.
[18] Ki-Seok Chung, Taewhan Kim, and C. L. Lin, “G-vector: A New Model for Glitch Analysis,” in Proc. ASIC, 1999, pp. 159-162.
[19] Ki-Seok Chung, Taewhan Kim, and C. L. Lin, “A Non-Zero Delay Model for Glitch Analysis in Logic Circuits,” in Proc. MWSCAS, 2000, pp. 1244-1247.
[20] D. Rabe, G. Jochens, L. Kruse, and W. Nebel, “Power-Simulation of Cell Based ASICs: Accuracy- and Performance Trade-Offs,” in Proc. DATE, 1998, pp. 356-361.
[21] D. Rabe and W. Nebel, “New Approach in Gate-Level Glitch Modelling,” in Proc. EDAC, 1996, pp. 66-71.
[22] Adel S. Seder and Kenneth C. Smith, Microelevtronic Circuits fourth edition. Oxford, 1998.
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29139-
dc.description.abstract最近幾年來,功率消耗是一項很重要的議題,並且工程師在設計IC時,必頇詳加考慮的一項因數。雖然HSPICE在於估計功率消耗方面,有相當不錯的準確度,然而,在於Circuit-level下模擬所消耗的時間,卻是非常可觀,近來比較複雜的電路設計,往往無法在HSPICE平台上模擬。而一般常用的模擬軟體在於Gate-level下模擬,雖然沒有消耗那麼多的模擬時間,卻往往無法得到所需要的準確度。 我們提出了一個模擬的方法,兼具了兩項的優點,不但可以得到準確的結果,而且可以模擬時間比HSPICE快。我們基於Event Driven模擬器之上,先於Circuit-level下模擬每個邏輯閘的運作狀況,並且紀錄許多參數,以獲得較準確的模擬結果,之後在於速度比較快的Gate-level下模擬整個電路,進而分析整個電路的功率消耗以及時序。我們用平面方程式為模型模擬邏輯閘的延遲時間以及功率消耗,並且我們也提出模型模擬一些被認為是定數的參數,例如負載電容量等。 我們的模擬結果,比HPICE快上約一千倍,平均誤差卻只有六%左右。zh_TW
dc.description.abstractIn recent years, power consumption has become an important issue that engineers must take into account. Although circuit-level simulators like HSPICE are capable of accurate power consumption estimation, the long simulation time makes them impractical for large designs. Gate-level simulators, on the other hand, are much faster, but the resulting inaccuracy is often unacceptable. In this thesis, we propose a simulator that combines the advantages of the gate and circuit-level simulators — it extends the capability of an event-driven gate-level simulator to obtain power estimation accuracy comparable to that of HSPICE. To achieve this goal, HSPICE is utilized to construct a comprehensive timing model for each logic gate. Using these timing models, accuracy in timing and glitch estimation is much improved. In the past, many logic gate timing models were proposed; however, most of them were over-simplified or fail to consider all the timing related factors or the interactions among the factors. In our simulator, we use a linear model for the delay and the power consumption of each logic gate. The linear model also considers the variable cut value of inertial model and the load capacitance. The simulator has been implemented. Compared to HSPICE, our simulator is about three orders faster, while the simulation results are within 6% of HSPICE.en
dc.description.provenanceMade available in DSpace on 2021-06-13T00:42:25Z (GMT). No. of bitstreams: 1
ntu-96-R94943151-1.pdf: 1664010 bytes, checksum: 344446e464308e906e422ac33b6ed99f (MD5)
Previous issue date: 2007
en
dc.description.tableofcontents摘要 ....................................................................................................................... I
ABSTRACT ............................................................................................................ III
CONTENTS ........................................................................................................... IV
FIGURES .............................................................................................................. VI
TABLES .............................................................................................................. VIII
1. INTRODUCTION ........................................................................................... 1
1.1. POWER ESTIMATION ISSUE .......................................................................... 1
1.2. OVERVIEW OF POWER ESTIMATION TECHNIQUES ........................................ 1
1.3. THE PROPOSED SIMULATOR ........................................................................ 5
2. BACKGROUND .............................................................................................. 8
2.1. DEFINITION .................................................................................................. 8
2.2. RISING AND FALLING TRANSITINONS ........................................................ 10
2.3. THE LOAD EFFECT ON TIMING ................................................................... 11
2.4. LOAD MODELING ...................................................................................... 13
2.5. EFFECT OF RISE/FALL TIMES ON DELAY ................................................... 14
2.6. POWER CONSUMPTION OF STATIC CMOS CIRCUITS ................................. 16
2.7. LOAD EFFECT ON POWER CONSUMPTION .................................................. 17
2.8. EFFECT OF TEMPORAL PROXIMITY OF INPUT TRANSITIONS ....................... 18
2.9. GLITCH MODELS ....................................................................................... 21
3. PROPOSED MODEL .................................................................................... 24
3.1. THE RISE/FALL TIME MODEL .................................................................... 24
3.2. PROPAGATION DELAY MODEL .................................................................. 26
3.3. POWER CONSUMPTION MODEL .................................................................. 32
3.4. LOAD MODEL ............................................................................................ 37
4. IMPLEMENTATION OF THE SIMULATOR .......................................... 41
4.1. PRIORITY QUEUE EVENT SCHEDULER ....................................................... 41
4.2. THE EVENT DRIVEN SIMULATION STRATEGY ............................................ 43
4.3. POWER ESTIMATION .................................................................................. 46
4.4. THE PROCESS OF PROPOSE SIMULATOR ..................................................... 46
5. SIMULATION RESULTS ............................................................................ 49
5.1. THE ACCURCY OF PROPOSED MODELS ....................................................... 49
5.2. THE ISCAS 85 BENCHMARK CIRCUITS ..................................................... 51
5.3. TIMING SIMULATION RESULTS .................................................................. 52
5.4. POWER ESTIMATION RESULTS ................................................................... 55
5.5. CPU TIME ................................................................................................. 58
6. DISCUSSION ................................................................................................. 59
7. CONCLUSION .............................................................................................. 64
8. REFERENCE ................................................................................................. 65
dc.language.isoen
dc.subject模擬zh_TW
dc.subject功率消耗zh_TW
dc.subjectpower modelen
dc.subjectgate-levelen
dc.subjectsimulatoren
dc.subjectglitchen
dc.title數位電路功率消耗及時序分析zh_TW
dc.titleA Logic Simulator for Timing and Power Analysisen
dc.typeThesis
dc.date.schoolyear95-2
dc.description.degree碩士
dc.contributor.oralexamcommittee李建模,陳竹一
dc.subject.keyword功率消耗,模擬,zh_TW
dc.subject.keywordpower model,glitch,simulator,gate-level,en
dc.relation.page66
dc.rights.note有償授權
dc.date.accepted2007-07-25
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept電子工程學研究所zh_TW
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