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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29033完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李嗣涔 | |
| dc.contributor.author | Ren-Jye Shiue | en |
| dc.contributor.author | 薛仁杰 | zh_TW |
| dc.date.accessioned | 2021-06-13T00:36:00Z | - |
| dc.date.available | 2008-07-27 | |
| dc.date.copyright | 2007-07-27 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-24 | |
| dc.identifier.citation | [1] A. D. Arnold, P. E. Castro, T. K. Hatwar, M. V. Hettel, P. J. Kane, J. E. Ludwicki, M. E. Miller, M. J. Murdoch, J. P. Spindler, S. A. Van Slyke, K. Mameno, R. Nishikawa, T. Omura, S. Matsumoto, J. SID 13, 525 (2005).
[2] Ho-Kyoon Chung, Ki-Yong Lee, Seong Taek Lee, J. SID 14, 49 (2006). [3] M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, IEEE Trans. Electron Devices 48, 845 (2001). [4] Y. Hong, J. Y. Nahm and J. Kanicki, IEEE Tran. Electron Device, 10, 16 (2004). [5] Y. C. Lin and H. P David Shieh, IEEE Tran. Electron Device, 51, 1037(2004). [6] J. H. Kim, Y. Hong and J. Kanicki, IEEE Tran. Electron Device, 7, 451(2004). [7] C. Hosokawa et al., SID, p. 7, 1998. [8] C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987). [9] M.-H. Lu, M. S. Weaver, T. X. Zhou, M. Rothman, R. C. Kwong, M. Hack, and J. J. Brown, Appl. Phys. Lett. 81, 3921 (2002). [10] H. Aziz, Y.-F. Liew, H. M. Grandin, and Z. D. Popovic, Appl. Phys. Lett. 83, 186 (2003). [11] C.-J. Yang, C.-L. Lin, and C.-C. Wu, Appl. Phys. Lett. 87, 143507 (2005). [12] W. E. Spear and P.G. LeComber, Philos. Mag., 33, 935 (1976). [13] W. E. Spear and P.G. LeComber, Solid state Comm., 17, 1193(1975). [14] D. E. Carlson, U.S. Patent 4,064, 521, (1977a). [15] D. E. Carlson,, and C. R. Wronski, Appl. Phys. Lett. 28, 671, (1976). [16] A. Madan, J. McGill, W. Czubatyj, J. Yang, and S.R. Ovshinsky, Appl. Phys. Lett. 37, 826, (1980). [17] G. Nakamura, K. Sato, H. Kondo, Y. Yudimoto. And K. Shirahato, Eur. Community Photovoltaic Sol. Energy Conf. 4 th Stressa. Italy, p. 616. D. Reidil. Doredrect. Holland.(1982). [18] D. E. Carlsont, “Semiconductors And Semimetals,” Vol 21, Part D , Chapter 2, Academic Press. Inc. (1984). | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/29033 | - |
| dc.description.abstract | 在本論文中，先探討兩種元件的特性包括用準分子雷射退火的多晶矽薄膜電晶體以及非晶矽p-i-n太陽能電池。太陽能電池被導入在薄膜電晶體和有機發光二極體之間以解決對比降低的問題。經由這種新的設計，太陽光和有機二極體所發出來的光都可以被太陽能電池所吸收，同時這兩種被回收的光也可以被視為一種新的能源來達成能量回收型的有機發光二極體。而以每個能量回收型單元為核心，將能量回收型元件中薄膜電晶體連接成閘極的掃描線以及汲極的資料線的方式，擴展為能量回收型有機發光二極體的矩陣來展示此種能量回收型元件能應用在現今的面板產品中，特別是對於省電節能需求很高的可攜式的電子產品。三個元件的整合製程中需要運用低溫絕緣層a-SiNX薄膜以及特殊設計的有機發光二極體電極。最後，我們成功的製作出包含16組三種元件的4x4能量回收型有機發光二極體矩陣。 | zh_TW |
| dc.description.abstract | The performance of poly-Si TFT fabricated by excimer laser annealing and the current-voltage characteristics of a-Si:H p-i-n solar cell were studied in the thesis. Solar cell was introduced between thin film transistor (TFT) and organic light emitting diode (OLED) to solve the contrast problem. Through the new design, both the sun light and the emitted light from OLED can be absorbed by the solar cell to achieve the energy-recycling OLED. By connecting every TFT drain with data lines and gate with scan lines, we will expand this energy-recycling device to a 4x4 energy-recycling array, which has practical applications in some mobile/portable electronic devices which are particularly power-aware. The integration of the three devices (TFT and OLED and solar cell) requires a low temperature a-SiNx passivation layer and a specially designed electrodes for OLED. Finally, the 4x4 energy-recycling OLED array consisting of 16 TFT, 16 solar cell and 16 OLEDs has been fabricated successfully. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T00:36:00Z (GMT). No. of bitstreams: 1 ntu-96-R94943137-1.pdf: 790935 bytes, checksum: 50ac6c2cac775027613a13d110cdf976 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | Contents
Chapter 1 Introduction 1 Chapter 2 Experiments 5 2.1 Deposition System --Plasma Enhanced Chemical Vapor Deposition（PECVD）………………………..5 2.2 Substrate Preparation 8 2.3 Deposition Procedures 10 2.4 Measurement Techniques 11 2.4.1 Film Thickness 11 2.4.2 Current–Voltage Characteristics 12 2.4.3 Transmittance and Reflectance…………………………..12 2.4.4 Spectral Response………………………………………..12 2.4.5 Introduction of FTIR………………………………………….15 Chapter 3 Poly-Si Thin Film Transistor and a-Si:H p-i-n Solar Cell………………………..18 3.1 The fabrication of poly-Si TFT by ELA………18 3.2 The Performance of Poly-Si TFT by ELA…………23 3.3 The fabrication processes of a-Si:H p-i-n Solar Cell..23 3.4 Current-Voltage Characteristics of a-Si:H p-i-n SolarCell………………………………………25 Chapter 4 4x4 Energy-Recycling OLED array…………………………..35 4.1 The fabrication of 4x4 energy-recycling OLED array..............................................................................36 4.2 The Performance of TFT and a-Si:H p-i-n Solar Cell as a part of 4x4 energy-recycling array……………44 4.3 The 4x4 energy-recycling OLED array ……………55 Chapter 5 Conclusions 68 References 70 | |
| dc.language.iso | en | |
| dc.subject | 非晶矽p-i-n太陽能電池 | zh_TW |
| dc.subject | 多晶矽薄膜電晶體 | zh_TW |
| dc.subject | 有機發光二極體 | zh_TW |
| dc.subject | poly-Si TFT | en |
| dc.subject | oled | en |
| dc.subject | a-Si:H p-i-n solar cell | en |
| dc.title | 用於 4x4 能量回收型有機發光二極體陣列之多晶矽薄膜電晶體及非晶矽p-i-n太陽能電池 | zh_TW |
| dc.title | The poly-Si Thin Film Transistor and a-Si:H p-i-n Solar Cell for 4x4 Energy-Recycling Organic Light Emitting Diode Array | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 李君浩,蔡熊光 | |
| dc.subject.keyword | 多晶矽薄膜電晶體,非晶矽p-i-n太陽能電池,有機發光二極體, | zh_TW |
| dc.subject.keyword | poly-Si TFT,a-Si:H p-i-n solar cell,oled, | en |
| dc.relation.page | 71 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-07-26 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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