請用此 Handle URI 來引用此文件：
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28713完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 楊照彥 | |
| dc.contributor.author | Yu-Hsuan Chuang | en |
| dc.contributor.author | 莊宇軒 | zh_TW |
| dc.date.accessioned | 2021-06-13T00:18:58Z | - |
| dc.date.available | 2012-07-31 | |
| dc.date.copyright | 2007-07-31 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-27 | |
| dc.identifier.citation | [1] Larry D.Hartsough, “Electrostatic wafer holding”Solid State Technology, pp. 87-90, January 1993
[2] J.-F.Daviet, L.Peccoud and F.Modon, “Electrostatic clamping applied to semiconductor plasma processing, I.Theroetical modeling,”J.Electrochem.Soc, vol.140, no.11, pp.3256-3261, November 1993 [3] Hongching Shan, Bryan Y. Pu, Hua Gao, Kuang-Han Ke, Jenny Lewis, Michael Welch, and Chandra Deshpandey, “process kit and wafer temperature effects on dielectric etch rate and uniformity of electrostatic chuck,”J.Vac.Sci.Technol.B, vol.14, no.1, pp.521-526, Jan/Feb 1996 [4] J.-F.Daviet, L.Peccoud and F.Modon, “Heat transfer in a microelectronics plasma reactor,”J.Appl.Phys., vol.73, no.3, pp1471-1479, Feb 1993 [5] Mamour Nakasuji, Hiroyasu Shimizu, Takaaki Kato, “Low voltage and high speed operating electrostatic wafer chuck using sputtered tantalum oxide membrane,”J.Vac, Sci.Tcehnol.A., vol.12, no.5, pp.2834-2839, Sep/Oct 1994 [6] Kurt A.Olson, David E.Kotecki and Anthony J. Ricci, “Characterization modeling and design of an electrostatics chuck with improved wafer temperature uniformity,”Rev.Sci.Instrum., vol.66, no.2, pp.1108-1114, Feb 1995 [7] K.Donpoh, “Mondeling of rarefied gas heat conduction between wafer and susceptor,”IEEE Transaction on Semiconductor Manufacturing, vol.11, no.1, pp.25-29, Feb 1998 [8] K.Asano, F.Hatakeyama and K.Yatsuzuka, “Fundamental study of an electrostatic chuck silicon wafer holding,”IEEE Industry Applications Conference, vol.3, pp.1998-2003, 1997 [9] K.Asano, F.Hatakeyama and K.Yatsuzuka, “Fundamental study of an electrostatic chuck silicon wafer holding,”IEEE Industry Applications Conference, vol.38, no.3, pp.840-845, May/June, 2002 [10] J.A.Meyer, K.H.R.Krimse, “Experiments with backside gas cooling using an electrostatic wafer holder in an electron cyclotron resonance etching tool,”Appl.Phys.Lett., April 1994 [11] D.R.Wright, D.C.Hartman, “Low temperature etch chuck:modeling and experimental results of heat transfer and wafer temperature,”J.Vac.Sci.Technol.A, vol.10, no.4, pp.1910-1916, July/Aug 1995 [12] Chris M.Horwitz, “Electrostatic Chucks,”electrogrip [13] George A.Wardly, “Electrostatic wafer Chuck for electron beam microfabrication,”Rev.Sci.Instrum., vol.44, no.10, pp.1506-1509, Oct/1973 [14] Toshiya Watanabe, Tetsuo Kitabayashi, “Relationship between Electrostatic Resistivity and Electrostatic Force of Alumina Electrostatic Chuck,”Jpn.J.Appl.phys., p864 1993 [15] Toshiya Watanabe, Tetsuo Kitabayashi, “Electrostatic Force and Absorption Current of Alumina Electrostatic Chuck,”Jpn.J.Appl.Phys., July 1992 [16] Mamour Nakasuji, Hiroyasu Shimizu, “Low voltage and high speed operating electrostatic wafer chuck ,”J.Vac, Sci.Tcehnol., Nov/Dec 1992 [17] A.Johnsen, K.Rehbek, “A physical phenomenon and its application to telegraphy,telephony,etc,” IEEE.Journal,July 1923 [18] C.Balakrishnan, M.A.,“Johnsen-Rehbek effect with an electronic Semi-conductor,”British Journal of applied phys, Aug 1950 [19] Toru Tojo and Kazuyashi Sugihara, “Low voltage electrostatic wafer chuck for microfabrication systems,”Bull.Japan Soc.of Prec.Engg., vol.19, no.3, pp.211-213.Sep 1985 [20] US patent 5467249,Electrostatic chuck with reference electrode [21] US patent 5625526,Electrostatic chuck [22] US patent 5612851,Guard ring electrostatic chuck [23] 賴建裕, 台灣大學2003碩士論文,晶圓與靜電吸盤之熱傳分析 [24] 林志隆, 台灣大學2005碩士論文,電漿製程環境中雙極性靜電吸盤的量測與開發 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28713 | - |
| dc.description.abstract | 靜電吸盤（Electrostatic Chuck,ESC）已經廣泛的被半導體界所使用，而現在更應用到其他的業界中，例如應用在面版廠中可拿來固定ITO導電玻璃。此零組件之應用範圍日漸增加。在早期，靜電吸盤只用於吸附晶圓這方面，但是靜電吸盤還有能力可以去吸附其他類別的材料，所以根據觀察，靜電吸盤的應用範圍應該會越來越廣。本論文即是再討論各種不同介電性質之材料對於靜電吸盤吸附力之影響。本實驗利用靜電吸盤之測試平台，針對五種不同介電性質之材料做靜電吸盤之吸附力測試，由實驗結果中發現，靜電吸盤對於不同材料之吸附力會因其介電常數之不同而不同，其吸附力大小與吸附材料之介電常數呈現一正比的關係。經由理論中解釋會發生此現象的原因是因為影響靜電吸盤吸附力中的一項參數ε(介電常數,Dielectric constant)會因吸附物之介電常數不同而改變，原本之ε值會因為靜電吸盤與材料並聯而改變，進而影響吸附力之大小，此現象之推測在本論文中有詳細之解釋。 | zh_TW |
| dc.description.abstract | The Electrostatic Chuck (ESC) has been widely used in semiconductor industries, and now is being increasingly applied by other industries, for example, Flat Panel Display (FPD) industry, to hold ITO glasses. Previously, ESC was used only for silicon wafer. Based on our observations, however, the application of ESC might increase to a broader range because of its ability to chuck other materials as well. In this thesis, we discuss the effect of the chucking force on dielectric constants between different materials. We designed a chucking force experiment to test five different materials on an ESC test platform. We found different chucking forces of ESC due to variations in dielectric constant of the material and the chucking force was directly proportional to dielectric constant. We observed that one of the parameters of the chucking force could change with changing chucking material. As a result, original value of dielectric constant will change because ESC becomes multiple to the chucked material. A detailed explanation of this phenomenon has been provided in the thesis. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T00:18:58Z (GMT). No. of bitstreams: 1 ntu-96-R93543041-1.pdf: 3083158 bytes, checksum: 21995fe3fee9b9acf2793f644267b2cd (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 目錄
致謝..................................................I 摘要.................................................II 英文摘要............................................III 目錄.................................................IV 圖表目次.............................................VI 第一章 緒論 1.1 前言......................................1 1.2 研究動機..................................1 1.3 文獻回顧..................................2 第二章 傳統式晶圓座與ESC簡介.........................4 2.1 傳統式晶圓座簡介...........................4 2.1.1 力學式晶圓座.........................4 2.1.2 真空式晶圓座.........................6 2.2 靜電式晶圓座(ESC)之簡介與應用.............6 2.2.1 靜電式晶圓座之簡介.................8 2.2.2 靜電式晶圓座應用...................8 第三章 Electrostatic Chuck工作原理...................15 3.1 ESC工作原理.............................15 3.2單極 ESC................................21 3.3雙極 ESC................................23 第四章 實驗架構......................................25 4.1 量測方式與概念............................25 4.2 實驗儀器架設..............................26 4.3 實驗流程..................................32 第五章 實驗結果與討論................................39 5.1 實驗設定.................................39 5.1.1 材料尺寸設定.......................39 5.1.2 實驗環境設定......................42 5.2 實驗結果.................................43 5.3 討論.....................................50 第六章 未來工作與展望................................53 參考文獻.............................................54 | |
| dc.language.iso | zh-TW | |
| dc.subject | 靜電吸盤 | zh_TW |
| dc.subject | 介電材料 | zh_TW |
| dc.subject | 介電常數 | zh_TW |
| dc.subject | 吸附力 | zh_TW |
| dc.subject | 氦氣測漏率 | zh_TW |
| dc.subject | Dielectric materials | en |
| dc.subject | He Leakage Rate | en |
| dc.subject | Chucking Force | en |
| dc.subject | Dielectric Constant | en |
| dc.subject | Electrostatic Chuck | en |
| dc.title | 介電材料之靜電吸盤吸附力探討 | zh_TW |
| dc.title | A Study on Electrostatic Chucking Force of Dielectric Materials | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 王興華,黃俊誠,洪榮泰 | |
| dc.subject.keyword | 靜電吸盤,介電材料,介電常數,吸附力,氦氣測漏率, | zh_TW |
| dc.subject.keyword | Electrostatic Chuck,Dielectric materials,Dielectric Constant,Chucking Force,He Leakage Rate, | en |
| dc.relation.page | 55 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-07-27 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 應用力學研究所 | zh_TW |
| 顯示於系所單位： | 應用力學研究所 | |
文件中的檔案：
| 檔案 | 大小 | 格式 | |
|---|---|---|---|
| ntu-96-1.pdf 未授權公開取用 | 3.01 MB | Adobe PDF |
系統中的文件，除了特別指名其著作權條款之外，均受到著作權保護，並且保留所有的權利。