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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28538完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李允立 | |
| dc.contributor.author | Chih-Ling Wu | en |
| dc.contributor.author | 吳志凌 | zh_TW |
| dc.date.accessioned | 2021-06-13T00:11:21Z | - |
| dc.date.available | 2009-07-30 | |
| dc.date.copyright | 2007-07-30 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-27 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28538 | - |
| dc.description.abstract | 近年來，以InGaN/GaN為主的發光二極體(light-emitting diode, LED)有很大的進展。由於LED具備高亮度、壽命長以及高的穩定性，許多LED的新應用包括交通號誌燈、液晶螢幕的背光源以及一些發光上的應用已經被開發出來了。然而，為了未來的照明上的應用，更加增進LED的外部量子效率是非常重要的。
在本篇論文中，我們成功的利用濕式蝕刻來製作圖案化藍寶石基板。我們使用硫酸：磷酸= 3：1當作蝕刻溶液。與乾式蝕刻比起來，濕式蝕刻具有製程簡易、蝕刻速率高、蝕刻表面平滑以及價格低廉等優點。只要選擇適當的條件，我們就可以得到很高的蝕刻速率並且得到平滑的平面，最高的蝕刻速率可以超過3μm/min。本論文也找到了蝕刻速率與蝕刻時間的關係。同時，我們使用了不同的蝕刻條件製造了蝕刻圖案的不同藍寶石基板。為了之後的側向磊晶在圖案化藍寶石基板，我們可以設計不同的遮罩圖案來蝕刻出我們想要的圖案化藍寶石基板。 | zh_TW |
| dc.description.abstract | For last few years, there have been lots of progresses on InGaN/GaN-based light-emitting diodes (LEDs). Many new applications based on these LEDs including traffic light, backlight of TFT-LCD and some lighting applications, have been developed owing to the merits of LEDs, such as high-brightness, long-lifetime and high stability. However, for future illumination applications, it is very important to further enhance the external quantum efficiency of LED.
In this research, patterned sapphire substrates were fabricated with wet chemical etching technology. A 3H2SO4：1H3PO4 volume mixture was used as the etchant. Compared to the dry etching, wet etching had several merits, such as simpler process, higher etching rate, pit–free etching surface and lower cost. With proper treatment, very high etching rate with smooth and pit-free surface was obtained. The highest etching rate we measured was above 3μm/min. The relation between etching rates and temperatures is investigated in this work. At the same time, different geometrical patterned sapphire substrate is manufactured with different etching conditions. For further LEPS (Lateral Epitaxy on Patterned Substrate) technique, we can design the mask pattern to get patterned sapphire substrate we want. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T00:11:21Z (GMT). No. of bitstreams: 1 ntu-96-R94941038-1.pdf: 3741617 bytes, checksum: b2ec3cf4afc7a819dc08a0e2119ac03d (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 口試委員會審書I
致謝主II 摘要IV 英文摘要V 目綠VI 圓目綠IX 表目綠XIII 第一章 緒論 1 1.1 前言 1 1.2 研究動機與論文架構 2 第二章 理論基礎與文獻回顧 5 2.1 LED之基本原理與結構 5 2.2 LED的發展歷史 8 2.3 GaN磊晶基板的選擇 11 2.4 Elog (Epitaxial Lateral OverGrowth)側向磊晶技術 14 2.5 藍寶石基板的乾式蝕刻技術 15 2.6 藍寶石基板的濕式蝕刻技術原理與回顧 16 第三章 圖案化藍寶石基板濕式蝕刻實驗裝置與實驗流程 19 3.1 圖案化藍寶石基板濕式蝕刻實驗裝置 19 3.1.1 電漿輔助化學氣相沈積法 20 3.1.2 光罩對準曝光機 21 3.1.3 加熱器 21 3.1.4 熱電偶溫度計 21 3.2 圖案化藍寶石基板濕式蝕刻實驗流程與架構 22 3.2.1 實驗藥品及材料 22 3.2.2 圖案化藍寶石基板濕式蝕刻實驗流程 23 3.3 檢測方法 28 3.3.1 表面高度量測儀 28 3.3.2 掃描式電子顯微鏡 28 第四章 圖案化藍寶石基板濕式蝕刻實驗結果與討論 29 4.1 蝕刻溶液的選擇 29 4.2 濕式蝕刻製程在不同溫度與時間下與蝕刻速率之關係 36 4.3 硫酸磷酸混合液對n-GaN的反應 49 4.4 沒有遮罩下，濕式蝕刻製程的影響 52 4.5 大型圖案化藍寶石基板的製作 53 第五章 結論與未來展望 59 5.1 結論 59 5.2 未來展望 63 參考文獻 64 | |
| dc.language.iso | zh-TW | |
| dc.subject | 圖案化藍寶石基板 | zh_TW |
| dc.subject | 濕蝕刻 | zh_TW |
| dc.subject | 側向磊晶 | zh_TW |
| dc.subject | lateral epitaxy | en |
| dc.subject | patterned sapphire substrate | en |
| dc.subject | wet etching | en |
| dc.title | 圖案化藍寶石基板之濕式蝕刻 | zh_TW |
| dc.title | Wet etching of patterned sapphire substrates | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 黃建璋,張允崇 | |
| dc.subject.keyword | 濕蝕刻,側向磊晶,圖案化藍寶石基板, | zh_TW |
| dc.subject.keyword | wet etching,lateral epitaxy,patterned sapphire substrate, | en |
| dc.relation.page | 66 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2007-07-30 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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