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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28308完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 劉致為(Cheewee Liu) | |
| dc.contributor.author | Hsuan-Chih Li | en |
| dc.contributor.author | 黎軒志 | zh_TW |
| dc.date.accessioned | 2021-06-13T00:04:51Z | - |
| dc.date.available | 2014-08-10 | |
| dc.date.copyright | 2011-08-10 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-08-08 | |
| dc.identifier.citation | [1] Yu-Sheng Chen et al, “Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation”, VLSI-TSA, p.37-38, 2009.
[2] Huan-Lin Chang, Hsuan-Chih Li, and C. W. Liu, F. Chen, M.–J. Tsai, “Physical Mechanism of HfO2-based Bipolar Resistive Random Access Memory”, VLSI-TSA, 2011. [3] HY Lee et al, “Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM,” IEDM Tech. Dig., p.297-300, 2008. [4] HY Lee et al, “HfOx Bipolar Resistive Memory with Robust Endurance Using AlCu as Buffer Electrode” IEEE Electron Device Letters, p.703-705, 2009. [5] Yu-Sheng Chen, “Impact of Compliance Current Overshoot on High Resistance State, Memory Performance, and Device Yield of HfOx Based Resistive Memory and Its Solution”, VLSI-TSA, 2011. [6] Lee H Y, Chen Y S, Chen P S, et al., “Evidence and solutions of Over-RESET problem for HfOx-based resistive memory with sub-ns switching speed and high endurance”, IEDM, p.460–463, 2010. [7] Yu-Sheng Chen, “An Ultrathin Forming-Free HfOx Resistance Memory With Excellent Electrical Performance”, IEEE Electron Device Letters, 2010. [8] Enrique A. Miranda et al., “Model for the Resistive Switching Effect in HfO2 MIM structures Based on the Transmission Properties of Narrow Constrictions”, IEEE Electron Device Letters, vol. 31, 2010. [9] Ch. Walczyk et al., “Resistive switching in TiN/HfO2/Ti/TiN MIM devices for future nonvolatile memory applications”, IEEE Non-Volatile Memory Technology Symposium (NVMTS), p.1-4, 2009. [10] M.Y. Chan et al., 'Resistive switching effects of HfO2 high-k dielectric', Microelectronic Engineering, Volume 85, Issue 12, p. 2420-2424, 2008. [11] Zheng Fang, et al., 'High Performance HfOx -Based Resistive RAM Devices and Its Temperature Dependent Switching', Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on, p.14-16, 2009. [12] Sungho Kim, et al. 2009 - Solid-State Electronics - Highly durable and flexible memory based on resistance switching, Solid-State Electronics, Volume 54, Issue 4, pp. 392-396, April 2010. [13] Chikako Yoshida, et al., 'High speed resistive switching in Pt & TiO2 & TiN film for nonvolatile memory application', Applied Physics Letters, Volume 91, Issue 22 , 223510, 2007. [14] A. L. McWhorter, “1/f noise and germanium surface properties”, Semiconductor Surface Physics, p.207-228. University of Pennsylvania Press, Philadelphia, 1957. [3] F. N. Hooge. “1/f noise”, Physica, 83B (1):14-23, May 1976. [15] Kwok K. Hung et al., “A Unified Model for the Flicker Noise in Metal-Oxide-Semiconductor Field-Effect Transistors”, IEEE Transactions On Electron Devices, vol. 37, No.3, 1990. [16] Mouhamed Rahal et al., “Flicker Noise in Gate Overlapped Polycrystalline Silicon Thin-Film Transistors,” IEEE Transactions On Electron Devices, vol. 49, p. 319-323, 2002. [17] A. Corradetti et al., “Evidence of carrier number fluctuation as origin of 1/f noise in polycrystalline silicon thin film transistors,” Apply Physics Letters, vol. 67, p. 1730-1732, 1995. [18] E. Simoen and C. Claeys, “On the flicker noise in submicron silicon MOSFETs,” Solid-State Electron., vol. 43, p. 865-882, 1999. [19] Charalabos A. Dimitriadis et al., “Origin of low frequency noise in polycrystalline silicon thin-film transistors”, Thin Solid Films, vol.427, p. 113-116, 2003. [20] Charalabos A. Dimitriadis et al., “1/fγ noise in polycrystalline silicon thin-film transistors”, Journal of Applied Physics, vol.85, p. 3934-3936, 1999. [21] A. Bove et al., “Low-frequency excess noise induced by hot-carrier injection in polysilicon thin-film transistors”, Thin Solid Films, vol.383, p. 147-150, 2001. [22] Charalabos A. Dimitriadis et al., “Model of Low Frequency Noise in Polycrystalline Silicon Thin-Film Transistors”, IEEE Electron Device Letters, vol.22, p. 381-383, 2001. [23] S. Giovannini et al., “Low-frequency noise in gate overlapped lightly doped drain polycrystalline silicon thin-film transistors”, Applied Physics Letters, vol.76, p. 3268 - 3270, 2000. [24] National Device Laboratory website: http://www.ndl.org.tw/web/department/hftc/docs/007_1.pdf [25] ProPlus Design Solutions INC. website: http://www.proplussolution.com/html/doc/Datasheet_NoisePro.pdf [26] Christoforos G. Theodorou et al., “Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors”, IEEE Electron Device Letters, 2011. [27] Songhun Jeon et al., “Low –Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications”, IEEE Electron Device Letters, vol.31, 2010. [28] Toshio Kamiya et al., “Present status of amorphous In–Ga–Zn–O thin-film transistors,” Sci. Technol. Adv. Mater, 2010. [29] Byungki Ryu et al., “O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors,” Appl. Phys. Letters. Vol. 97, 2010. [30] In-Tak Cho et al., “Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics,” IEEE Electron Device Letters, vol. 30, No.8, August 2009. [31] Jae Chul Park et al., “Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation,” Appl. Phys. Letterst. Vol. 97, 2010. [32] Jong-Ho Lee et al., “Electrical Instabilities and Low-Frequency Noise in InGaZnO Thin Film Transistors,” IEEE, Physical and Failure Analysis of Integrated Circuits (IPFA), 2010. [33] Sanghun Jeon, Sun Il Kim, Sungho Park et al., “Low-Frequency Noise Performance of a Bilayer InZnO–InGaZnO Thin-Film Transistor for Analog Device Applications,” IEEE Electron Device Letters, vol. 31, p.1128-1130, 2010. [34] Sungchul Kim, Yongwoo Jeon et al. “Relation Between Low-Frequency Noise and Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors” IEEE Electron Device Letters, vol. 31, 2010. [35] Tze-Ching Fung, Gwanghye Baek, Jerzy Kanicki, “Low frequency noise in long channel amorphous In–Ga–Zn–O thin film transistors” Journal of Applied Physics, vol. 108, 2010. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28308 | - |
| dc.description.abstract | 在本論文中，第一部分為電阻式記憶體 (RRAM)的物理機制模型。RRAM是一種非揮發性記憶體，被視為最可能取代目前傳統快閃(flash)記憶體的候選者之一。RRAM的操作模式為利用外加電壓，可將其在低電阻態(LRS)與高電阻態之(HRS)間轉換，由此記錄邏輯之0或1。其優點在於具有低功率消耗與低操作電壓(寫入電壓 < 3V,讀取電壓~0.1V)、結構簡單(在過鍍金屬氧化物上下各夾金屬電極)、可多階操作 (可大幅提升記憶體密度)、讀取與寫入速度非常快 (< 10 ns)、耐用度高 (> 10 年)等優勢。元件的製備由工研院(ITRI)提供，量測一部分為工研院所提供，一部分則在台灣大學量測。我們對RRAM做了許多不同的實驗，例如改變電流限流(current compliance), 最大負電壓VSTOP,以及分析RRAM 元件之串、並聯之操作。我們發現串聯SET時會發生所謂的浮動端影響，進而提出物理模型來解釋，並提出方法來避免此現象之發生。
第二部份為薄膜電晶體低頻雜訊的理論分析。元件的製備為友達光電(AUO)所提供，並在國家奈米中心(NDL)進行低頻雜訊量測。一開始先分析McWhorter Model之物理，並與其他在文獻上其他兩組模型做比較。接下來從量測結果進一步探討物理機制並加以解釋。 第三部分為IGZO材料之低頻雜訊量測，元件的製備為奇美光電(CMO)所提供，並在國家奈米中心(NDL)進行低頻雜訊量測。因這部分目前比較少人再研究，希望透過低頻雜訊的量測了解其物理特性。 | zh_TW |
| dc.description.abstract | In this thesis, the first part is the model and physical mechanism of Resistive random access memory (RRAM). RRAM is one of the many types nonvolatile memory, which is the most promising candidate to replace traditional flash memory. External voltage is added on RRAM to switch the device between low resistance state (LRS) and high resistance state (HRS), and recorded to Logic 0 or 1. RRAM has advantages of low power consumption and low operation voltage (write voltage <3V, read voltage ~0.1V), a simple structure (a transition metal oxide layer between top and bottom layer electrode), multilevel operation (can dramatically increase memory density), very fast read and write speed (<10ns), high durability (>10yrs). Our device is prepared by Industrial Technology Research Institute (ITRI), some measurements are done in ITRI, and others and done in NTU. We have did different experiment test on RRAM, such as different current compliance, maximum negative voltage Vstop, and analysis of series operation of two RRAM cell. We discover for series SET test, there will be so-called floating terminal effect; we will propose a model for thi phenomenon, and a way to prevent this.
The second part is the physical analysis on Thin-Film Transistor (TFT). The device is prepared by AU Optronics Corp.(AUO), and measured at National Nano Device Laboratories (NDL). We will first start from the analysis of physics of McWhorter Model compare with other two models in the literature. Next, we will further discuss and explain the physical mechanism from the measurement results. The third part is the low frequency analysis of α-IGZO, where the device is prepared by Chimei Innolux Corporation (CMO), and measured at National Nano Device Laboratories (NDL). Since there are little research on this topic, we hope with the analysis of low frequency noise, we can learn more about the physical mechanism of α-IGZO. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T00:04:51Z (GMT). No. of bitstreams: 1 ntu-100-R98943158-1.pdf: 2481740 bytes, checksum: 7e3434c7bfc2e71ed44dfb21934c0b50 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | Oral Committee Approval Letter…………………………………………………………………………I
Acknowledgements…………………………………………………………………………………………………………III Chinese Abstract ……………………………………………………………………………………………………………V English Abstract ………………………………………………………………………………………………………VII List of Figures ………………………………………………………………………………………………………XIII List of Tables…………………………………………………………………………………………………………XVIII Publication List…………………………………………………………………………………………………………XIX Chapter 1 Introduction 1.1 Motivation……………………………………………………………………………………………………………………1 1.2 Dissertation Organization……………………………………………………………………………2 Chapter 2 Series and Parallel Measurement of Resistive Random Access Memory with Floating Terminal Effect 2.1 Introduction………………………………………………………………………………………………………………4 2.1.1 Structure of HfO2 based RRAM………………………………………………………………5 2.2 Bipolar Operation and Physical Model of RRAM…………………………6 2.2.1 Switching Behavior and I-V Electrical Characteristic of RRAM ……………………………………………………………………………………………………………………………………6 2.2.2 Resistive switching model based on Electrochemical Redox Process………………………………………………………………………………………………………………………8 2.3 Multi-level Cell Operation (MLC) of RRAM Cell……………………10 2.3.1 Different SET Current Compliance (C.C.)………………………………10 2.3.2 Different VSTOP ……………………………………………………………………………………………12 2.3.3 Summary of Multi-level Operation…………………………………………………15 2.4 Series Measurement test on RRAM…………………………………………………………15 2.4.1 Procedures for Series Measurement SET test………………………16 2.4.2 Floating Terminal Effect………………………………………………………………………19 2.4.3 Measuring Floating Voltage…………………………………………………………………20 2.4.4 Formation of Filament under Floating Terminal Effect………………………………………………………………………………………………………………………………………24 2.4.5 Experiment of Series SET test without Floating Electrode………………………………………………………………………………………………………………………………26 2.4.6 Thicker filament Reduce Influence of Floating Terminal Effect………………………………………………………………………………………………………………………………………28 2.4.7 Summary of Series SET Operation……………………………………………………30 2.5 Parallel SET Measurement test on RRAM…………………………………………31 2.5.1 Ti layer in Parallel SET Measurement………………………………………32 2.5.2 Summary of Parallel SET Operation………………………………………………33 2.6 Summary and Conclusion…………………………………………………………………………………33 Reference………………………………………………………………………………………………………………………………34 Chapter 3 1/f Noise Analysis of Polycrystalline Silicon Thin film Transistor 3.1 Introduction……………………………………………………………………………………………………………36 3.1.1 Fabrication of Poly-Si Thin Film Transistor……………………37 3.2 Analysis of Low frequency Noise Model…………………………………………38 3.2.1 McWhorter’s Number Fluctuation Model & Theory………………38 3.2.2 Hooge’s Mobility Fluctuations Model…………………………………………43 3.2.3 Carrier Number with Correlated Mobility Fluctuation Model ………………………………………………………………………………………………………………………………………44 3.2.4 Summary of the Three Models………………………………………………………………45 3.3 Analysis of 1/f Noise of Poly-Si TFT by Correlated Model…………………………………………………………………………………………………………………………………………45 3.3.1 Noise Spectral at Varying Gate Bias and Channel Length………………………………………………………………………………………………………………………………………45 3.3.2 Discrimination of 1/f noise expressions………………………………48 3.3.3 Fitting of Parameter K……………………………………………………………………………50 3.3.4 Analysis of scattering parameter…………………………………………………54 3.4 Analysis of Frequency Exponent……………………………………………………………57 3.4.1 Relationship between Frequency Exponent and Lorentzian Spectrum…………………………………………………………………………………………………………………………………57 3.4.2 Analysis of with the relationship to Overdrive Gate Voltage……………………………………………………………………………………………………………………………………59 3.4.3 Electron’s Wavefunction and Traps in Oxide………………………60 3.5 Summary and Conclusion…………………………………………………………………………………64 Reference………………………………………………………………………………………………………………………………65 Chapter 4 1/f Noise Analysis of α-IGZO Thin Film Transistor 4.1 Introduction……………………………………………………………………………………………………………67 4.1.1 Cross-sectional of α-IGZO TFTs………………………………………………………68 4.2 Noise measurement Setup………………………………………………………………………………68 4.3 Noise Properties of the α-IGZO TFTs………………………………………………69 4.3.1 Dependence of Drain Current Noise Spectrum with Gate Voltage……………………………………………………………………………………………………………………………………70 4.3.2 Dependence of Noise with Channel Area …………………………………71 4.4 Determination of Noise Model for α-IGZO……………………………………73 4.4.1 Extraction of Threshold Voltage by Saturation Method ……………………………………………………………………………………………………73 4.4.2 Normalized Drain Current Noise as function of Overdrive Gate Voltage……………………………………………………………………………………………76 4.4.3 Input Gate Noise Spectral Density as function of Overdrive Gate Voltage……………………………………………………………………………………………78 4.5 Calculation of Trap Density for α-IGZO TFT……………………………79 4.6 Frequency Exponent γ vs. Overdrive Gate Voltage………………81 4.7 Summary and Conclusion…………………………………………………………………………………83 Reference………………………………………………………………………………………………………………………………85 Chapter 5 Summary and Future work 5.1 Summary…………………………………………………………………………………………………………………………87 5.2 Future work………………………………………………………………………………………………………………88 Appendix A – Calculation of attenuation length λ………………………90 | |
| dc.language.iso | en | |
| dc.subject | 電阻式記憶體 | zh_TW |
| dc.subject | 薄膜電晶體 | zh_TW |
| dc.subject | 低頻雜訊 | zh_TW |
| dc.subject | 1/f雜訊 | zh_TW |
| dc.subject | α-IGZO | zh_TW |
| dc.subject | α-IGZO | en |
| dc.subject | 1/f noise | en |
| dc.subject | low frequency noise | en |
| dc.subject | TFT | en |
| dc.subject | resistive random access memory | en |
| dc.title | 電阻式記憶體串、並聯之量測與浮動端之影響與多晶矽薄膜電晶體及非晶相銦鎵鋅氧化物薄膜電晶體之低頻雜訊分析 | zh_TW |
| dc.title | Series and Parallel Measurement of Resistive Random Access Memory with Floating Terminal Effect and 1/f Noise Analysis of Poly-Silicon Thin Film Transistor and α-IGZO Thin Film Transistor | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 林中一(Lin Chung-Yi),張書通(Shu-Tong Chang),張廖貴術(Chang-Liao, Kuei-Shu),郭宇軒(Yu-Hsuan Kuo) | |
| dc.subject.keyword | 電阻式記憶體,薄膜電晶體,低頻雜訊,1/f雜訊,α-IGZO, | zh_TW |
| dc.subject.keyword | resistive random access memory,TFT,low frequency noise,1/f noise,α-IGZO, | en |
| dc.relation.page | 90 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-08-08 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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