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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 鄭鴻祥(Henry H. Cheng) | |
| dc.contributor.author | Tzung-Hsian Wu | en |
| dc.contributor.author | 吳宗憲 | zh_TW |
| dc.date.accessioned | 2021-06-13T00:02:20Z | - |
| dc.date.available | 2011-08-08 | |
| dc.date.copyright | 2011-08-08 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-08-08 | |
| dc.identifier.citation | Bibliography
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28186 | - |
| dc.description.abstract | 我們的實驗研究內容為利用分子束磊晶技術，成長厚度超過臨界厚度之鍺錫薄
膜。一系列鍺錫薄膜樣品是於接近錫熔點之低溫條件下，成長於鍺緩衝層之上， 內含最高可達百分之十四之相異的錫成份。特別的是，一層低溫鍺緩衝層被成長 於鍺錫薄膜與鍺基板之間，用以捕捉晶格缺陷。數個量測分析展現了在穿透式電 子顯微鏡橫截面影像裡，鍺錫薄膜幾無缺陷，而且在錫成份低於百分之九點三的 樣品裡錫非常均勻地分布在鍺錫薄膜當中。我們所成長的鍺錫合金內含之錫成分， 超過了理論預測裡鍺可由非直接能隙轉變為直接能隙的錫成分。因此，此份研究 目的為提供一個可成長出直接能隙鍺錫薄膜的方法，亦可被應用於光電元件技術 之中。 | zh_TW |
| dc.description.abstract | We report on experimental investigations of the growth of Ge1-xSnx film with thickness above the critical thickness using Molecular Beam Epitaxy. A series of Ge1-xSnx films with various Sn compositions up to 14% are deposited on a Ge buffer layer for growth at low temperatures close to the melting point of Sn. Especially, a low temperature Ge buffer layer was grown between GeSn film and Ge substrate for
trapping defects. Analysis of various measurements shows that the Ge1-xSnx film is defect free in the XTEM image and that Sn is distributed almost uniformly in the film for Sn compositions up to 9.3%. The Sn composition of the films is higher than the Sn composition that is theoretically predicted to cause the energy band of Ge to change from an indirect to a direct bandgap; thus, the present nvestigation provides a method for growing direct bandgap GeSn film, which is desired for use in applications involving optoelectronic devices. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-13T00:02:20Z (GMT). No. of bitstreams: 1 ntu-100-R98943113-1.pdf: 2434516 bytes, checksum: 067b9d294129e2884626f0a8a468bd08 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | Contents
口試委員會審定書 # 誌謝 i 中文摘要 ii Abstract ……………………………………………………..………………………….iii Contents………….……………………….......................................................................iv List of Figures……………………………………..………………………………….vii List of Table…….…………………………….………………………………………….x CHAP1 Introduction……………………………………………………...1 1.1 Motivation…………………………………………………………...1 1.2 Ge…………………………………………………………………..3 1.3 GeSn Alloy…………………………………………………………..…7 1.3.1 Material Properties…………………………………………………………...7 1.3.2 Growth Challenges………………………………………………………….10 CHAP 2 Growth Equipments and Charaterization Techniques……...13 2.1 Molecular Beam Epitaxy……………………………………………...13 2.2 Reflection High-Energy Electron Diffraction………………………...15 2.3 Transmission Electron Microscopy…………………………………...16 2.4 Energy-Dispersive X-ray Spectroscopy………………………………17 2.5 Scanning Electron Microscope………………………………………..18 2.6 X-Ray Diffraction……………………………………………………..20 2.7 Fourier Transform Infra-Red spectroscopy…………………………...21 2.8 Raman Scattering……………………………………………………..22 CHAP 3 MBE Growth of GeSn Alloys…………………………………24 3.1 Sample Growth of GeSn Alloys………………………………………24 3.2 Material Quality Characterization…………………………………….28 3.2.1 Transmission Electron Microscopy…………………………………………28 3.2.2 Energy-Dispersive X-ray Spectroscopy…………………………………….32 3.2.3 Scanning Electron Microscope……………………………………………...33 CHAP 4 Physical properties of GeSn Alloys…………………………...36 4.1 Strain Analysis………………………………………………………...36 4.1.1 Experimental Results………………………………………………………..36 4.1.2 Theoretical Calculations…………………………………………………….38 4.1.3 Results and discussion………………………………………………………40 4.2 Optical Characterization………………………………………………42 4.2.1 Fourier Transform Infra-Red spectroscopy…………………………………42 4.2.2 Raman Scattering……………………………………………………………46 CHAP 5 Conclusions and Future Work………………………………..48 5.1 Conclusions…………………………………………………………...48 5.2 Future work…………………………………………………………...49 Bibliography……………………………………………………………...50 | |
| dc.language.iso | en | |
| dc.subject | 穿透式電子顯微鏡 | zh_TW |
| dc.subject | 分子束磊晶 | zh_TW |
| dc.subject | 鍺錫合金 | zh_TW |
| dc.subject | 直接能隙 | zh_TW |
| dc.subject | GeSn alloy | en |
| dc.subject | MBE | en |
| dc.subject | direct bandgap | en |
| dc.subject | TEM | en |
| dc.title | 低溫下高成分錫之鍺錫成長研究 | zh_TW |
| dc.title | Investigation of Ge1-xSnx/Ge with high Sn composition grown at low temperature | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 孫剛(Greg Sun),洪冠明(K. M. Hung),賈至達(C. T. Chia),張國恩(Guo-En Chang) | |
| dc.subject.keyword | 分子束磊晶,鍺錫合金,直接能隙,穿透式電子顯微鏡, | zh_TW |
| dc.subject.keyword | MBE,GeSn alloy,direct bandgap,TEM, | en |
| dc.relation.page | 52 | |
| dc.rights.note | 有償授權 | |
| dc.date.accepted | 2011-08-08 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位： | 電子工程學研究所 | |
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