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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳志毅(Chih-I Wu) | |
dc.contributor.author | Juo-Chiun Ruan | en |
dc.contributor.author | 阮卓群 | zh_TW |
dc.date.accessioned | 2021-06-13T00:01:44Z | - |
dc.date.available | 2012-08-01 | |
dc.date.copyright | 2007-08-01 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-07-30 | |
dc.identifier.citation | 參考文獻:
[1]:Kabachinski, Jeff, “An introduction to RFID”, Biomedical Instrumentation and Technology, v 39, n2, p 131-134(2005) [2]:Ranky, PG, 'An introduction to radio frequency identification (RFID) methods and solutions', Assembly Automation, vol. 26, no.1, pp. 28-33 [3]:Finkenzeller, K. RFID Handbook Vol. 1 Ch. 5, 114 (Wiley, New York, 2002). [4]:Kent N Gourdin, Logistics management : a global perspective : a competitive advantage for the new millennium(Oxford : Blackwell, 2005) [5]:Roman Rochel, Dr Donald Joyce, “Impact of RFID Technology on Supply Chain Management Systems”, 19th Annual Conference of the National Advisory Committee on Computing Qualifications (NACCQ 2006) [6]:D. Molnar, A. Soppera, and D. Wagner, “Privacy For RFID Through Trusted Computing”, ACM Workshop on Privacy in the Electronic Society,, p 31-34 (2005) [7]:PF Baude, DA Ender et. al., “Organic semiconductor RFID transponders,” IEEE Int.Elect. Dev. Meeting Tech. Digest, pp.8.1.1-4.(2003) [8]:O. Shchekin et. al., “13.56 MHz Organic transistor based Rectifier circuits for RFID tags”, MRS April 2005 abstracts, p.246(2005) [9]:Soeren Steudel et. al.,“ Comparison of organic diode structures regarding high-frequency rectification behavior in radio-frequency identification tags“, J. Appl. Phys. 99, 114519 (2006) [10]:Gutmann, Felix, “Organic semiconductors”, New York : Wiley, 1967 [11]:陳金鑫,黃孝文, 有機電激發光材料與元件, 五南圖書出版(2005) [12]:Subhash Chand and Jitendra Kumar, “Effects of barrier height distribution on the behavior of a Schottky diode”, J. Appl. Phys., Vol. 82, No. 10, 15 November(1997) [13]:Donald A. Neamen, “Semiconductor Physics & Devices”, McGraw-Hill Companies, July (2002) [14]:李嗣涔,管傑雄,孫台平, “半導體元件物理”, 三民書局印行 [15]:R. Want, “An Introduction to RFID Technology,” IEEE Pervasive Computing, Vol.5, No.1, pp.25-33, Jan.-Mar.(2006) [16]:Tae-Woo Lee, Ohyun Kwon et. al., ” Hole-injecting conducting-polymer compositions for highly efficient and stable organic light-emitting diodes”, Appl. Phys.Lett. 87, 231106 (2005) [17]:S. Timpanaro, M. Kemerink et. al., “Morphology and conductivity of PEDOT/PSS films studied by scanning–tunneling microscopy”, Chemical Physics Letters 394, 339–343 (2004) [18]:Andreas Elschner et. al., “ High-Conductive PEDOT/PSS for ITO-substitution in OLEDs“, IDW 2006 p.479-480 (2006) [19]:T. Dobbertin,O. Werner, J. Meyer, “Inverted hybrid organic light-emitting device with polyethylene dioxythiophene-polystyrene sulfonate as an anode buffer layer”, Appl. Phys.Lett. VOLUME 83, NUMBER 24 15 DECEMBER (2003) [20]:D. Jurchescu, J. Baas, “Effect of impurities on the mobility of single crystal pentacene”, Appl. Phys.Lett., Vol. 84, No. 16, (2004) [21] By Peter T. Herwig and Klaus MUllen,” A Soluble Pentacene Precursor: Synthesis,Solid-State Conversion into Pentacene and Application in a Field-Effect Transistor”, Ac/v. Mater., No. 6, Nov (1999) [22] http ://chrom.tutms.tut. ac.jp/J1NNO/DATABASE/ 1 7pentacene .html#Prope, Physical properties of pentacene [23] JOHN R. VIG, JOHN W. LE BUS,” UV/Ozone Cleaning of Surfaces”, IEEE TRANSACTIONS ON PARTS, HYBRIDS, AND PACKAGING, VOL. PHP-12, NO.4, Dec (1976) [24] Pope, M. & Swenberg, C. E. Electronic Processes in Organic Crystals and Polymers 2nd edn Vol. lCh. VI, 663 (Oxford Univ. Press, New York, Oxford, 1999). [25] V. I. Arkhipova) and H. von Seggern,” Charge injection versus space-charge-limited current in organic light-emitting diodes”, Appl. Phys.Lett., 83 5074 (2003). [26] Lampert, M. A. &Mark, P., “Current Injection in Solids” (Academic, New York, 1970). [27] Rongbin Ye, Mamoru Baba, Yoshiyuki Ohishi, and Kunio Mori, Kazunori Suzuki,” GROWTH CONDITIONS EFFECTS ON MORPHOLOGY AND TRANSPORT PROPERTIES OF PENTACENE THiN FILMS”, Mol. Ciyst. Liq. Cryst., Vol. 407, pp. 147/[543]—155/[551], 2003 [28] I.P.M. Bouchoms, W.A. Schoonveld), J. Vrijmoeth 1, T.M. Klapwijk, “Morphology identification of the thin film phases of vacuum evaporated pentacene on SlO substrates”, Synthetic Metals lO’Ip.l’7S—l’78 (1999) [29] Claudia Menozzi, Valdis Corradini et. al., “Pentacene self-aggregation at the Au(110)-(1 x2) surface: growth morphology and interface electronic states”, Thin Solid Films 428 227—23 1 (2003). [30] Fengliang Xue, Yi Su, Member, IEEE, and Kody Varahramyan, “Modified PEDOT-PSS Conducting Polymer as S/D Electrodes for Device Performance Enhancement of P3HT TFTs”, IEEE TRANSACTIONS ON ELECTR ON DE VICES, VOL. 52, NO. 9, Sep (2005) [31] D.K. Hwang, Kibum Kim et al.,” Structural and optical properties of 6,13-pentacenequinone film”, Applied Surface Science 244 615—618(2005) [32] Soeren Steudel et al. Nature materials Lett. Vol. 4 August, 597-600(2005) [33] Humidity sensors based on pentacene thin-film transistors Appl. Phys.Lett. 81 , 24 2002 . | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28150 | - |
dc.description.abstract | 本論文中,我們採用了pentacene來製作能在高頻元件下工作的有機二極體元件。它在無線射頻辨識系統(RFID,Radio Frequency Identification)的元件中,扮演著能夠持續穩定的整流電壓給晶片內的其他元件使用的重要角色。由於目前商業上RFID可實行的頻率是13.56MHz,而遺憾的是大部分的有機材料的載子遷移率太低,以至於無法在此頻率下發揮功能。因此,我們選擇了用pentacene為基礎來製作有機二極體,這是由於pentacene的載子遷移率遠較一般的有機材料來的高的原因。除此之外,我們本來還使用了PEDOT:PSS當作電洞注入層來增加元件的注入能力,藉此提升其載子遷移率。然而,卻也使得漏電流同時增加,大大降低了最大順向電流與最大逆向電流比,使得元件無法達到原先的高頻整流之目的。為此緣故,實驗上最後並不使用PEDOT:PSS,雖然載子遷移率因而降低,卻不至於無法在所希望的頻率下使用。最後,我們成功的在10MHz這個數量級下整流出4.14V的直流電壓,元件的載子遷移率約為0.019cm2/Vs。 | zh_TW |
dc.description.abstract | In this thesis, we adopt pentacene to fabricate organic diodes working on RF devices. It plays an important role which continuously offers stable voltage to other components in RFID tag chips. By far, commercial RFIDs operate at 13.56MHz. Unfortunately, the mobility of most organic materials is too low to work at such high frequency. Accordingly, we fabricate organic diodes based on pentacene as a result of higher mobility of pentacene as compared with other common organic materials. Besides, we use PEDOT:PSS as HIL(Hole Injection Layer) to improve carrier injection, thus promoting the carrier mobility. However, it also increases leakage current and lowers current of forward bias/reverse bias ratio so that organic diodes can not rectify at high frequency. Consequently, we decide not to use PEDOT:PSS in our experiment. Although the carrier mobility lowers, it still can rectify at 13.56MHz. Finally, we successfully complete organic diode devices operating at the order of 10MHz. The device has the rectifying voltage about 4.14V and carrier mobility about 0.019cm2/Vs. | en |
dc.description.provenance | Made available in DSpace on 2021-06-13T00:01:44Z (GMT). No. of bitstreams: 1 ntu-96-R94941085-1.pdf: 2043787 bytes, checksum: dc0eaf4796ea39e06d776a797118c440 (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | 內容
第一章 簡介 1 1-1有機RFID之發展 1 1-2有機薄膜電晶體與有機二極體的比較 5 1-3有機元件載子傳輸及原理介紹 7 第二章 實驗介紹 17 2-1材料介紹 17 2-1.1 PEDOT:PSS 17 2-1.2 pentacene 18 2-2 實驗儀器介紹 19 2-2.1 超音波震洗機 19 2-2.2 紫外光/臭氧處理機(UV/Ozone) 19 2-2.3 旋轉塗佈機 20 2-2.4 加熱平台 21 2-2.5 真空蒸鍍機 21 2-3 量測儀器介紹 22 2-3.1 IV量測儀器 22 2-3.2 child`s law介紹 22 2-3.3 高頻量測 24 2-4 實驗步驟 24 第三章 實驗結果與討論 31 3-1 pentacene與成長條件的關係 31 3-2 兩種PEDOT:PSS的比較 33 3-3元件特性分析及量測結果 35 3-3.1不同厚度對元件特性的影響 35 3-3.2增加PEDOT:PSS層對元件特性的影響 36 3-3.3 10.2MHz交流高頻整流結果 38 第四章 總結與未來展望 57 4-1總結 57 4-2未來展望 58 參考文獻: 59 | |
dc.language.iso | zh-TW | |
dc.title | 利用有機二極體在13.56MHz有機RFID標籤上的整流元件之應用 | zh_TW |
dc.title | 13.56MHz Rectification Device Based on Organic Diode for Application of Organic RFID Tag | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 黃建璋(Jian-Jang Huang),陳奕君(I-Chun Cheng) | |
dc.subject.keyword | 無線射頻標籤,高頻整流, | zh_TW |
dc.subject.keyword | RFID,tag,rectifier, | en |
dc.relation.page | 61 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2007-07-31 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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