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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 藍崇文(Chung-Wen Lan) | |
dc.contributor.author | Wen-Chieh Lan | en |
dc.contributor.author | 藍文杰 | zh_TW |
dc.date.accessioned | 2021-06-12T18:35:49Z | - |
dc.date.available | 2009-08-28 | |
dc.date.copyright | 2007-08-28 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-07-30 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/28052 | - |
dc.description.abstract | 氫化物氣相磊晶法(Hydride vapor phase epitaxy,HVPE)是生長氮化鎵的一種方式。主要是利用氯化氫和金屬鎵反應產生氫化鎵,再由氫化鎵與氨氣在基材上反應得到氮化鎵的厚膜。本研究主要的目的是透過模擬的方法設計一個HVPE反應器,期望在這個HVPE反應器中,藉由改變基材擺設的位置,以及不同的反應物出口,能得到均勻的氮化鎵生長速度,得到均勻性更好的氮化鎵厚膜。從模擬的結果得到氮化鎵的平均長速大約為100 μm/hr,而基材上最快的長速與最慢的長速差別大約在10%左右,與實驗的結果相差不遠。透過模擬,我們找到ㄧ個最適合的氮化鎵生長的幾何形狀之外,也證明了我們使用的反應機構用在研究氮化鎵的生長方面是可行的。 | zh_TW |
dc.description.abstract | The growth of GaN by HVPE is a popular method. HCl reacts with liquid gallium and generates GaCl. Then the reaction of formation of GaN from GaCl and NH3 occurs on the substrate. This study purpose is to design a HVPE reactor with the uniform growth rate by computer simulations. By changing the wafer position and the shower head’s angle we expect to get uniform growth rate in this HVPE reactor. The average growth rate is about 100 μm/hr from results of the simulations. The fastest growth rate on the wafer and the slowest growth rate are comparable. The results form simulations are consistent with the results of the experiments. We not only find an optimistic geometry for growth of GaN, but also the kinetic model we use in this study is suitable for the growth of GaN. | en |
dc.description.provenance | Made available in DSpace on 2021-06-12T18:35:49Z (GMT). No. of bitstreams: 1 ntu-96-R94524081-1.pdf: 46924801 bytes, checksum: 01e0f06ad71476939a369a2d0cb862a7 (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | 目 錄
中文摘要 Ⅰ 英文摘要 Ⅱ 目錄 Ⅲ 符號說明 Ⅴ 圖目錄 Ⅷ 表目錄 Ⅹ 第一章 緒論 1 1.1 前言 1 1.2 文獻回顧 2 1.3 研究動機 5 第二章 物理模式與電腦模擬 7 2.1 反應原理與系統介紹 7 2.2 主導方程式 15 2.3 表面反應 20 2.4 電腦模擬 23 第三章 結果與討論 30 3.1 不同shower head角度對反應器內部流場與濃度分布的影響 30 3.2 不同Shower head角度對氮化鎵生長的影響 37 3.3 不同晶片位置對氮化鎵生長速度的影響 41 第四章 結論 50 參考文獻 52 | |
dc.language.iso | zh-TW | |
dc.title | 氮化鎵生長之HVPE反應器模擬與設計 | zh_TW |
dc.title | Simulations and Designs for
Growth of GaN in the HVPE Reactor | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 張正陽,陳志臣,高振宏 | |
dc.subject.keyword | 氮化鎵,氣相磊晶,電腦模擬, | zh_TW |
dc.subject.keyword | HVPE,GaN,simulations, | en |
dc.relation.page | 56 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2007-07-31 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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