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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 陳永芳(Yang-Fang Chen) | |
dc.contributor.author | Yu-Sheng Ou | en |
dc.contributor.author | 歐育陞 | zh_TW |
dc.date.accessioned | 2021-06-12T17:54:18Z | - |
dc.date.available | 2008-02-19 | |
dc.date.copyright | 2008-02-19 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-02-04 | |
dc.identifier.citation | 1.C. JULIAN CHEN, Introduction to Scanning Tunneling Microscopy (1993)
2.J. DABROWSKI and H.-J. MÜSSIG, Silicon Surfaces and Formation of Interfaces (2000) 3.A. Roth, Vacuum Technology (1976) 4.R. M. Feenstra et al., Observation of Bulk Defects by Scanning Tunneling Microscopy and Spectroscopy: Arsenic Antisite Defects in GaAs, Phys. Rev. Lett. 71, 1176 (1993) 5.J. F. Zheng et al., Scanning Tunneling Microscopy Studies of Si Donors ( ) in GaAs, Phys. Rev. Lett. 72,1490 (1994) 6.M. C. M. M. van der Wielen et al., Direct Observation of Friedel Osicllation around Incorporated Dopants in GaAs by Low-Temperature Scanning Tunneling Microsopy, Phys. Rev. Lett. 76, 1075 (1996) 7.C. Domke et al., Microscopic Identification of the compensation mechanisms in Si-doped GaAs, Phys. Rev. B 54, 10288 (1996) 8.Chr. Wittneven et al., Scattering States of Ionized Dopants Probed By Low Temperature Scanning Tunneling Spectroscopy, Phys. Rev. Lett. 81, 5616 (1998) 9.R. M. Feenstra, G. Meyer, F. Moresco and K. H. Rieder, Low-temperature scanning tunneling spectroscopy of n-type GaAs (110) surfaces, Phys. Rev. B 66, 165204 (2002) 10.A. M. Yakunin et al., Spatial Structure of an Individual Mn Acceptor in GaAs, Phys. Rev. Lett. 92, 216806 (2004) 11.G. Mahieu et al., Direct Evidence for Shallow Acceptor States with Nonspherical Symmetry in GaAs, Phys. Rev. Lett. 94, 026407 (2005) 12.T. Trappmann et al., Observation of P donors on the Si (111) surface by scanning tunneling microscopy, Europhys. Lett. 38, 177-182 (1997) 13.Maya Schöck et al., Investigation of Single boron acceptors at the cleaved Si:B (111) surface, Phys. Rev. B 61, 7622 (2000) 14.J. K. Garleff et al., Identification of P dopants at nonequivalent lattice sites of the Si (111)-2x1 surface, Phys. Rev. B 76, 125322 (2007) 15.L. Liu et al., Atom-resolved three-dimensional mapping of boron dopants in Si(100) by scanning tunneling microscopy, Appl. Phys. Lett. 78, 386 (2001) 16.L. Liu et al., Subsurface Dopant-Induced Features on the Si (100) 2x1: H Surface: Fundamental Study and Applications, IEEE Trans. Nanotech. 1, 176 (2002) 17.Yuji Suwa et al., Dopant-Pair Structures Segregated on a Hydrogen-Terminated Si(100) Surface, Phys. Rev. Lett. 90, 156101 (2003) 18.G. W. Brown et al., Observation of buried phosphorus dopants near clean Si(100)-2x1 surfaces with scanning tunneling microscopy, Phys. Rev. B 70, 121301 (2004) 19.M. Nishizawa et al., Scanning Tunneling Microscopy Observation of Individual Boron Dopant Atoms beneath Si(001)- 2x1 Surfaces, J. J. Appl. Phys. 44, L1436 (2005) 20.G. W. Brown et al., Observation of substitutional and interstitial phosphorus on clean Si(100)-(2x1) with scanning tunneling microscopy, Phys. Rev. B 72, 195323 (2005) 21.T. Komeda and Y. Nishioka, STM and cluster Calculation Study of Segregated B on Si(001) surface, Jpn. J. Appl. Phys. 37, 1188 (1998) 22.S.R. Schofield et al., Atomically Precise Placement of Single Dopants in Si, Phys. Rev. Lett. 91, 136104 (2003) 23.D. Riedel et al., Atomic-scale analysis of hydrogen bond breaking from Si(100):H induced by optical electronic excitation, Phys. Rev. B 72, 233304 (2005) 24.J. E. Vasek et al., Effects of hydrogen impurities on the diffusion, nucleation and growth of Si on Si(001), Phys. Rev. B 51, 17207 (1995) 25.John J. Boland, Role of bond-strain in the chemistry of hydrogen on the Si(100) surface, Surf. Sci. 261, 17-28 (1992) 26.M. Nishizawa, Origin type-C defects on the Si(100)-2x1 surface, Phys. Rev. B 65, 161302 (2002) 27.J. Y. Maeng et al., S.K. Jo and W. P. Fitts et al., Adsorption of gas-phase atomic hydrogen by Si(100): Effect of surface atomic structures, Appl. Phys. Lett. 79, 36 (2001) 28.國立交通大學物理研究所碩士論文”雙原子分子在半導體表面孤立懸鍵上的吸附研究” 吳曉婷撰 (2007) | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/27038 | - |
dc.description.abstract | 由於表面能態之消除,使氫鈍化之矽(100)-2x1表面下之摻雜得以被觀察。在本篇論文當中,表面下硼誘發於氫鈍化之矽(100)-2x1表面之特徵以超高真空顯微術觀察。對所有在本實驗所觀察到的硼誘發之表面特徵,可以藉著其形貌及振幅的不同而大略的區分不同的誘發特徵。這些硼誘發之表面特徵的差異是由於表面非等向結構所造成表面非等向的電子結構影響處在不同位置的硼摻雜所誘發之表面特徵的行為。更近一步分析於不同偏壓下特定表面特徵的延展行為發現該特徵局部非等向性的延展行為顯現表面非等向晶格結構確實影響摻雜誘發之特徵的行為。 | zh_TW |
dc.description.abstract | Hydrogen-passivated Si (100)-2x1 surface enables the observation of subsurface dopant because of elimination of surface states. In this thesis, boron-induced features on Si(100)-2x1:H surface are studied by ultrahigh vacuum scanning tunneling microscopy. For all the features we have observed, different types of boron-induced features can be roughly distinguished in terms of appearances and amplitudes. The divergence between these features are due to that surface anisotropic lattice structure contributing anisotropic electronic structure affects the behavior of these boron-induced features, induced by boron located in different sites. Furthermore, by analyzing the extension behavior of a specific boron-induced feature at different sample bias, the local anisotropic extension reflects that anisotropic surface lattice structure indeed influence the behavior of the boron-induced feature. | en |
dc.description.provenance | Made available in DSpace on 2021-06-12T17:54:18Z (GMT). No. of bitstreams: 1 ntu-97-R94222013-1.pdf: 2294037 bytes, checksum: 523d1bef6c8da6c58120f15280200bee (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | Table of Contents
Abstract Acknowledgements Table of Contents Chapter 1. Introduction 1 Chapter 2. Experimental principles 7 2.1 Principles of scanning tunneling microscopy (STM) 7 2.2 Local density of state (LDOS) 9 2.3 STM operating modes 10 (a) Constant current mode 10 (b) Constant height mode 11 (c) Current image tunneling spectroscopy (CITS) 12 2.4 Lattice structure of Silicon and Si(100)-2x1 reconstruction 13 2.5 Hydrogen-passivated Si (100)-2x1 surface 17 2.6 Tip-induced band bending effect 19 Chapter 3. Experimental Instruments and Procedures 21 3.1 Experimental Setup 21 3.2 Ultra-high-vacuum (UHV) System 22 3.3 Experimental procedures 25 3.3.1 Sample preparation 25 3.3.2 Hydrogen exposure 26 3.3.3 Hydrogen-cracking system 26 Chapter 4. Results and Discussion 27 4.1 Bare Si(100)-2x1 surface 27 4.2 Hydrogen-passivated Si(100)-2x1 surface 30 4.3 Subsurface dopant-induced features 32 4.4 Local anisotropic extension of subsurface boron-induced features on Si(100)-2x1:H surface 35 4.5 Analyses and comparison for three dopant-induced features 40 4.6 Conclusion 45 | |
dc.language.iso | en | |
dc.title | 以掃描穿隧顯微術研究氫鈍化之矽(100)-2x1表面下摻雜誘發之表面特徵 | zh_TW |
dc.title | Investigation of Subsurface Dopant-Induced Features on Si(100)-2x1:H Surface by Scanning Tunneling Microscopy | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-1 | |
dc.description.degree | 碩士 | |
dc.contributor.coadvisor | 張嘉升(Chia-Seng Chang) | |
dc.contributor.oralexamcommittee | 蘇維彬(Wei-Bin Su) | |
dc.subject.keyword | 超高真空,掃描穿隧能譜術,矽(100)-2x1表面,氫鈍化,硼摻雜,探針誘發能帶彎曲效應,非等向性延展, | zh_TW |
dc.subject.keyword | ultra high vacuum (UHV),scanning tunneling microscopy (STM),Si(100)-2x1,hydrogen passivation,boron dopant,tip-induced band bending effect, | en |
dc.relation.page | 45 | |
dc.rights.note | 有償授權 | |
dc.date.accepted | 2008-02-04 | |
dc.contributor.author-college | 理學院 | zh_TW |
dc.contributor.author-dept | 物理研究所 | zh_TW |
顯示於系所單位: | 物理學系 |
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