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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26636完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 李嗣涔 | |
| dc.contributor.author | Hui-Wen Lin | en |
| dc.contributor.author | 林慧雯 | zh_TW |
| dc.date.accessioned | 2021-06-08T07:18:34Z | - |
| dc.date.copyright | 2008-08-05 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-25 | |
| dc.identifier.citation | [1]Zhao J, Wang A, Green M, Prog. Photovolt. 7 471-474 (1999).
[2]Luque A, Ruiz J, Cuevas A, Agost M, Proc. 1st Euro. Conf. Photovoltaic Solar Energy Conversion, 269-277 (1977). [3]Green M, Silicon Solar cells. Advanced Principles and Practice , Chap. 7, Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney (1995). [4]Tiedje T, Yablonovitch E, Cody G, Brooks B, IEEE Trans, Electron Devices 31, 711-716 (1984). [5]Waver P, Schmidt A, Wagemann H, Proc. 14th Euro, Conf, Photovoltaic Solar Energy Conversion , 2450-2453 (1997). [6]Green M, Prog. Photovolt. 8, 443-450 (2000). [7]Jianhua Zhao, Solar Energy Materials & Solar Cells 82,53 (2004) [8]W. Fuhs *, S. Gall, B. Rau, M. Schmidt, J. Schneider, Solar Energy 77, 961 (2004). [9] B. Zimmermann, M. Glatthaar, M. Niggemann, M. Riede, A. Hinsch, Thin Solid Films 493, 170-174 (2005) [10] Q.L. Song, F.Y. Li, H. Yang, H.R. Wu, X.Z. Wang, W. Zhou, J.M. Zhao ,X.M. Ding, C.H. Huang, X.Y. Hou, Chemical Physics Lett. 416,42-46 (2005). [11]Maycock P (Ed), PV Energy System, PV NEWS 20(3), 2 (2001). [12]W.E. Spear and P.G. LeComber, Philos. Mag., 33, 935 (1976) [13]W.E. Spear and P.G. LeComber, Solid State Comm., 17,1193 (1975) [14]D.E. Carlson, U.S. Patent 4,064, 521, (1977a). [15] D. E. Carlson, and C. R. Wronski, Appl. Phys. Lett. 28, 671, (1976). [16] A. Madan, J. McGill, W. Czubatyj, J. Yang, and S. R. Ovshinsky, Appl. Phys. Lett. 37, 826, (1980). [17] G. Nakamura, K. Sato, H. Kondo, Y. Yudimoto, and K. Shirahato, Eur. Community Photovoltaic Sol. Energy Conf. 4 th Stressa. Italy, p. 616. D. Reidil. Doredrecht. Holland. (1982). [18] D. E. Carlsont, “Semiconductors And Semimetals,” Vol 21, Part D, Chapter 2, Academic Press. Inc. (1984). [19]M. A. Green, Solar Cells, Prentice Hall, 1982. [20] Threshold and Grayscale Stability of Microcup® Electronic Paper. IS&T/SPIE 16th Annual Symposium, San Jose, California, USA [21]G. Nakamura, K. Sato, H. Kondo, Y. Yudimoto. And K. Shirahato, Eur, Community Photovoltaic Sol, Energy Conf. 4th Stressa. Italy, p616. D. Reidil, Doredrect, Holland. (1982) [22]I.M. Dharmadasa, Solar Energy Materials & Solar Cells 85,293 (2005) | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26636 | - |
| dc.description.abstract | 一個p-i-n非晶矽太陽能電池僅能提供不到0.7伏特的開路電壓,本論文中,為了達到更高的高開路電壓以應用在電子紙之電源供應,首先利用堆疊兩顆非晶矽p-i-n太陽能電池來提升開路電壓,經由初步的厚度理論計算以及一連串改進製程參數,兩個p-i-n太陽能電池可以達到1.51伏特的開路電壓。接著藉由堆疊三個非晶矽p-i-n太陽能電池希望能再將開路電壓往上提升,由實驗數據發現,開路電壓可以提升至2.06伏特。為了實際的應用,我們希望太陽能電池的開路電壓能夠高於10伏特以應用在軟性電子上,因此,我們串接了九顆的pin-pin-pin非晶矽太陽能電池。此外,為了能與可捲曲式的元件整合,例如電子紙,我們將原先的玻璃基板換成塑膠基板。最後,我們成功的串接9組太陽能電池在塑膠基板上且得到13.8伏特的高開路電壓。 | zh_TW |
| dc.description.abstract | One a-Si:H p-i-n solar cell can only provide open-circuit voltage Voc~0.7V. In this thesis, to achieve higher open-circuit voltage for the application as a power supply for electronic paper, the tandem a-Si:H p-i-n solar cell is used to increase the Voc. After the theoretical calculation of film thickness and a series of process improvement, the open-circuit voltage of the double-junction tandem solar cell could be increased to 1.51 V. In order to get higher Voc, the triple-junction a-Si:H p-i-n solar cell is fabricated, and the Voc is raised to 2.06 V. For practical applications in flexible electronics, the Voc of the solar cell is better to be larger than 10 V. Therefore, the nine triple-junction solar cells connected in series have been developed. Furthermore, for the integration with flexible devices, such as electronic paper, the glass substrate for nine triple-junction solar cells is replaced by the plastic substrate. Finally, nine cells in series on the plastic substrate has been fabricated successfully and its Voc of that achieves 13.8 V. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T07:18:34Z (GMT). No. of bitstreams: 1 ntu-97-R95943051-1.pdf: 4030413 bytes, checksum: bda2342b1cad77ff7d85bb495ce188ee (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 致謝 i
摘要 ii Abstract iii Contents………………………………...……….…iv Figure Index……………………………………..…vi Table Index……………………………………….viii Chapter 1 Introduction 1 Chapter 2 Experiments 4 2.1 Deposition System - PECVD 4 2.2 Substrate Preparation 8 2.3 Deposition Procedures 10 2.3.1 PECVD 10 2.4 Measurement Techniques 12 2.4.1 Film Thickness 12 2.4.2 Current – Voltage Characteristics 12 2.4.3 Transmittance and Reflectance 12 2.4.4 Spectral Response 13 2.4.5 Introduction of FTIR 13 Chapter 3 Double-junction and Triple-junction a-Si:H p-i-n Solar Cells 18 3.1 The Physical Principle of Multi-junction Solar Cell 18 3.2 The Fabrication of Tandem a-Si:H p-i-n Solar Cell 23 3.3 Current-Voltage Characteristics of Tandem a-Si:H p-i-n Solar Cell 24 3.4 Fabrication Process of Triple-junction a-Si p-i-n Solar Cell 37 3.5 Current-Voltage Characteristics of Triple-junction a-Si:H p-i-n Solar Cell 38 Chapter 4 Nine Triple-junction a-Si:H p-i-n Solar Cells In Series 44 4.1 The Fabrication Of Nine Triple-junction a-Si Solar Cells in Series 45 4.2 Results and Discussion 46 Chapter 5 Conclusion 57 Reference 59 | |
| dc.language.iso | en | |
| dc.subject | 開路電壓 | zh_TW |
| dc.subject | 太陽能電池 | zh_TW |
| dc.subject | 非晶矽 | zh_TW |
| dc.subject | a-Si:H | en |
| dc.subject | Open-circuit voltage | en |
| dc.subject | Solar cell | en |
| dc.title | 可撓式高開路電壓之串接非晶矽薄膜太陽能疊電池 | zh_TW |
| dc.title | High Open-circuit Voltage Tandem a-Si:H p-i-n Solar Cells in Series on Flexible Substrate | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 吳忠幟,劉致為,鄭鴻祥 | |
| dc.subject.keyword | 非晶矽,太陽能電池,開路電壓, | zh_TW |
| dc.subject.keyword | a-Si:H,Solar cell,Open-circuit voltage, | en |
| dc.relation.page | 60 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2008-07-27 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| 顯示於系所單位: | 電子工程學研究所 | |
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