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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26524完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 馮哲川(Zhe Chuan Feng) | |
| dc.contributor.author | Tsung-Lung Huang | en |
| dc.contributor.author | 黃從龍 | zh_TW |
| dc.date.accessioned | 2021-06-08T07:13:40Z | - |
| dc.date.copyright | 2008-08-05 | |
| dc.date.issued | 2008 | |
| dc.date.submitted | 2008-07-29 | |
| dc.identifier.citation | References
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26524 | - |
| dc.description.abstract | 氧化鋅是下個世代最熱門的光電材料，有著3.3eV的寬能隙，以及60meV的激子侷限能，加上可以與鎂及鎘共同組成三元或四元化合物，與氮化鎵基的光電材料相類似。在本論文中將會討論氧化鋅塊材、氧化鋅薄膜成長於業界常用的藍寶石基板以及氧化鎂鋅薄膜成長於藍寶石基板。另外由於有相近的晶格及熱擴張係數，氧化鋅被考慮用來當作三族氮化物磊晶成長的基板材料。因此我的工作包含了使用有機金屬化學氣相沈積磊晶技術在晶格匹配的氧化鋅基板上成長氮化銦鎵及氮化鎵磊晶層的分析及研究。因為在成長氮化鎵基底材料元件上，有機金屬化學氣相沈積磊晶為一個主要的生長技術，因此在其成長氧化鋅基板上有需要再全面完整的探索。然而，在使用有機金屬化學氣相沈積磊晶在氧化鋅上成長氮化鎵仍有數個議題待解決。其中一個是氧化鋅基板的熱穩定性，鋅原子會向外擴散到氮化鎵層並且氫氣會背向蝕刻氧化鋅基板，這會造成氮化鎵較不佳的品質。高解析度X光繞射量測可確認出在氧化鋅上成長的氮化銦鎵及氮化鎵薄膜。而透過可變角度橢圓偏振儀、X光電子能譜、二次質譜儀縱深剖面圖、以及歐傑電子能譜縱深剖面圖我們可得到樣品的光學及結構特性。另外，為了避免鋅及氧原子擴散到磊晶層，我們採用兩種方法：
1.在氧化鋅基板上先成長一層氮化鎵緩衝層。 2.在氧化鋅上加上一層氧化鋁的過渡層。 利用歐傑電子縱深剖面能譜以及二次離子質譜儀縱深剖面能譜來研究氧以及鋅原子擴散情形，並以X射線光電子能譜量測並分析表面鍵結。另外最重要的是以可變角度橢偏儀量測並模擬此系列樣品氮化鎵與氮化銦鎵的厚度、介電常數以及折射率與消光係數。 而我論文的第二個部份，是氮化鋁材料的研究。研究的主要課題是討論由有機金屬化學氣相沈積磊晶之氮化鋁的性質。分成兩個主題： 1.C- face的氮化鋁薄膜成長於A，C，M，R- plane的藍寶石基板 2.氮化鋁薄膜成長於不同基板 (藍寶石基板以及碳化矽基板) 利用深紫外光光致發光能譜與陰極發光能譜來研究氮化鋁薄膜缺陷工程，以及掃瞄電子顯微鏡研究表面特性，可變角度橢偏儀量測並模擬此系列樣品厚度、介電常數以及折射率與消光係數。X射線光電子能譜量測並分析不同面向氮化鋁薄膜的表面鍵結。 | zh_TW |
| dc.description.provenance | Made available in DSpace on 2021-06-08T07:13:40Z (GMT). No. of bitstreams: 1 ntu-97-R95941082-1.pdf: 2959855 bytes, checksum: 74c6c20c4781200e9c2bc910a30ff655 (MD5) Previous issue date: 2008 | en |
| dc.description.tableofcontents | 口試委員會審定書........................................................................................................i
致謝...............................................................................................................................ii 摘要..............................................................................................................................iii Abstract.........................................................................................................................iv Content.........................................................................................................................vi Lists of Figures.............................................................................................................ix Lists of Tables...........................................................................................................xvii Chapter 1 Introduction 1.1. Nature and applications of ZnO-based semiconductor materials………….1 1.2. Nature and applications of AlN……………………………………………3 References……………………………………………………………………….4 Chapter 2 Theoretical Background and Experimental Details 2.1 Variable Angle Spectroscopic Ellipsometry (VASE) data analysis…...……..6 2.1.1. Introduction…………………………………………………………...6 2.1.2 Cauchy model……...…………………………………………………..8 2.1.3 Oscillator models……………...……………………………………...11 2.1.3.1 Lorentz model………………….……..……………….........………..…...12 2.1.3.2Gaussian model…………………………………………………..............12 2.1.3.3 Tauc-Lorentz model………………………………………………….......13 2.1.3.4 Fitting procedure………………………………………………………...14 2.2 X-ray photoelectron spectroscopy (XPS)…………………………………16 2.2.1 Introduction………………………………………………………..16 2.2.2 Spectral Features of XPS: Chemical Shifts………………………..18 2.2.3 Spectral Features of XPS: Doublet and Multiplet Splitting……….19 2.2.4 The application of XPS: Analysis of the composition…………….20 References…………………………………………………………………….…21 Chapter 3 Investigations of ZnO bulk and ZnO-based thin film 3.1. Introduction………………………………………………………………....23 3.2. Investigations of ZnO bulk………………………………………………....24 3.2.1 VASE investigation of ZnO bulk…………………………………………….….24 3.2.2 XPS investigation of ZnO bulk………………………………………………….27 3.3. Investigations of ZnO on c-sapphire………...……………………………...29 3.3.1VASE investigations of ZnO thin films on c-sapphire………………………….29 3.3.2 XPS investigations of ZnO thin films on c-sapphire……………………..…...36 3.4. VASE investigations of MgZnO on c-sapphire…………………….......…..41 References……………………………………………………………….………50 Chapter 4 InGaN/GaN on ZnO substrate with and without Al2O3 transition layer by atomic layer deposition 4.1 Introduction…………………………………………………….……….52 4.2 Investigations of InGaN/GaN on ZnO without GaN buffer layer………54 4.2.1VASE investigations of InGaN/GaN on ZnO without GaN buffer layer………55 4.2.2 XPS investigations of InGaN/GaN on ZnO without GaN buffer layer………..60 4.2.3 SIMS analysis of InGaN/GaN on ZnO without GaN buffer layer…………….65 4.3 Investigations of n-type InGaN on ZnO with GaN buffer layer………...66 4.3.1VASE investigations of n-type InGaN on ZnO with GaN buffer layer…….…..67 4.3.2 XPS investigations of n-type InGaN on ZnO with GaN buffer layer…………77 4.3.3 SIMS analysis of n-type InGaN on ZnO with GaN buffer layer………….…..83 4.4 Investigations of p-type InGaN on ZnO with GaN buffer layer…….…..84 4.4.1VASE investigations of p-type InGaN on ZnO with GaN buffer layer…….…..85 4.4.2 XPS investigations of p-type InGaN on ZnO with GaN buffer layer…………87 4.4.3 SIMS analysis of p-type InGaN on ZnO with GaN buffer layer…….…….…..92 4.5 Investigations of InGaN/GaN/Al2O3 (atomic layer deposition) on ZnO…..…..93 4.5.1 Introduction……………………………………………………………………93 4.5.2 HRXRD investigations of InGaN/GaN/Al2O3 (atomic layer deposition) on ZnO …………………………………………………………………………………….…96 4.5.3 VASE investigations of InGaN/GaN/Al2O3 (atomic layer deposition) on ZnO…………………………………………….…………………………….98 4.5.4 XPS investigations of InGaN/GaN/Al2O3 (atomic layer deposition) on ZnO …………………………………………………………………………….…100 4.5.5 SIMS analysis of InGaN/GaN/Al2O3 (atomic layer deposition) on ZnO…….108 4.5.6 AES analysis of InGaN/GaN/Al2O3 (atomic layer deposition) on ZnO…...…109 References…………………………………………………………………..….111 Chapter 5 Investigations of AlN semiconductor materials 5.1 Analysis of AlN thin films on various faces sapphires by XPS………..113 5.2 VASE investigations of AlN thin films on different substrates………..117 Lists of Figures Figure1.1(a) ZnO-based materials bandgap diagram (b) GaN-based materials bandgap diagram.........................................................................................................................2 Figure2.1. Ellipsometry theory chart...................................................................................................6 Figure 2.2 VASE analysis flow chart ...................................................................................................7 Figure 2.3 Properties of what ellipsometry measures……………........................................................7 Figure 2.4 Initial fitting set of Al2O3 on Si………….............................................................................9 Figure 2.5 Thickness and An values of Cauchy layer...........................................................................9 Figure 2.6 Final fitting results of Cauchy layer..................................................................................10 Figure 2.7 The fitting parameter of Al2O3 layer..................................................................................11 Figure 2.8 The real dielectric constant ‘ | |
| dc.language.iso | en | |
| dc.subject | 氮化鋁 | zh_TW |
| dc.subject | 光電子能譜 | zh_TW |
| dc.subject | 橢偏儀 | zh_TW |
| dc.subject | 氧化鋅 | zh_TW |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | AlN | en |
| dc.subject | XPS | en |
| dc.subject | SE | en |
| dc.subject | ZnO | en |
| dc.subject | GaN | en |
| dc.title | 氧化鋅基及氮化鋁半導體材料之光學與結構分析 | zh_TW |
| dc.title | Optical and Structural Analysis of ZnO-based and AlN Semiconductor Materials | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 96-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張哲政,許世欣 | |
| dc.subject.keyword | 氮化鎵,氮化鋁,氧化鋅,橢偏儀,光電子能譜, | zh_TW |
| dc.subject.keyword | GaN,AlN,ZnO,SE,XPS, | en |
| dc.relation.page | 121 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2008-07-30 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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