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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.advisor | 陳奕君(I-Chun Cheng) | |
dc.contributor.author | I-Chung Chiu | en |
dc.contributor.author | 邱義忠 | zh_TW |
dc.date.accessioned | 2021-06-08T07:06:20Z | - |
dc.date.copyright | 2008-09-02 | |
dc.date.issued | 2008 | |
dc.date.submitted | 2008-09-01 | |
dc.identifier.citation | 第一章參考文獻
[1] R. A. Street, Hydrogen amorphous silicon. Cambridge University Press, 1991, pp.1-2. [2] I. C. Cheng and S. Wagner, “Nanocrystalline silicon thin film transistors,” IEE Proc.-Circuits, Devices and Systems, vol. 150, no.4, pp.339-344, 2003. [3] P. Roca Cabarrocas, R. Brenot, P. Bulkin, R. Vanderhaghen, and B. Drevillon, “Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique,” J. Appl. Phys., vol.86, pp.7079-7082, 1999. [4] C. H. Lee, A. Sazonov, and A. Nathan, “High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett., vol.86, pp.222106-1-3 (2005). [5] F. Finger, P. Hapke, M. Luysberg, R. Carius, H. Wagner, M. Scheib, “Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge,” Appl. Phys. Lett., vol.65, pp.2588-2590, 1994. [6] O. Vetterl, A. lamberts, A. Dasgupta, F. Finger, B. Rech, O. Kluth, H. Wagner, “Thickness dependence of microcrystalline silicon solar cell properties,” Sol. Energy Mater. Sol. Cells, vol.66, pp.345-351, 2001. [7] Cherie R. Kagan and Paul Andry, Thin-Film Transistors. Marcel Dekker, Inc., 2003, pp.1-4. [8] R. A. Street, Hydrogen amorphous silicon. Cambridge University Press, 1991, pp.213-214. [9] Cherie R. Kagan and Paul Andry, Thin-Film Transistors. Marcel Dekker, Inc., 2003, pp.54-55. [10] D. L. Staebler and C. R. Wronski, “Reversible conductivity changes in discharge-produced amorphous Si,” Appl. Phys. Lett., vol.31, pp.292-294, 1977. [11] B. Stannowski, J. K. Rath and R. E. I. Schropp, “Thin-film transistors deposited by hot-wire chemical vapor deposition,” Thin Solid Films, vol.430, pp.220-225, 2003. [12] I Chun Cheng and Sigurd Wagner, “Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C,” Appl. Phys. Lett., vol.80, p.440-442, 2002. [13] B. B. Jagannathan, R. L. Wallace, and W. A. Anderson, “Structural and electrical properties of thin microcrystalline silicon films deposited by an electron cyclotron resonance plasma discharge of 2% SiH4/Ar further diluted in H2,“ J. Vac. Sci. Technology A, vol.16, pp.2751-2756,1998. [14] Sumita Mukhopadhyay, Chandan Das and Swati Ray, “Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique,” J. Phys. D: Appl. Phys., vol. 37, pp.1736-1741,2004. [15] F. Finger, R. Carius, T. Dylla, S. Klein, S. Okur and M. Gunes, “Stability of microcrystalline silicon for thin film solar cell applications,” IEE Proc. -Circuits Devices Syst., vol.150, no.4, pp.300-308, 2003. [16] I. C. Cheng, “Nanocrystalline silicon thin film transistors on plastic substrates,” Ph.D. thesis, Univ. of Princeton, 2004. [17] L. Houben, M. Luysberg, P. Hapke, R. Carius, F. Finger and H. Wagner, “Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth,” Philosophical Magazine A, vol.77, no.6, pp.1447-1460, 1998. [18] Mohammad R. Esmaeili-Rad, Flora Li, Andrei Sazonov, and Arokia Nathan, “Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric,” J. Appl. Phys., vol.102, pp.064512-1-7, 2007. [19] Michio Kondo, Makoto Fukawa, Lihui Guo, Akihisa Matsuda, “High rate growth of microcrystalline silicon at low temperatures,” J. Non-Crys. Solids, vol.266-269, pp.84-89, 2000. [20] Koel Adhikary, Swati Ray, “Characteristics of p-type nanocrystalline silicon thin films developed for window layer of solar cells,” J. Non-Crys. Solids, vol.353, pp.2289-2294, 2007. [21] A. Poruba, A. Fejfar, Z. Remes, J. Springer, M. Vanecek, and J. Kocka, “Optical absorption and light scattering in microcrystalline silicon thin films and solar cells,” J. Appl. Phys., vol.88, pp.148-160, 2000. [22] P. Alpuim and V. Chu, J. P. Conde, ‘Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition,” J. Vac. Sci. & Tech.A, vol.21, pp.1048-1054, 2003. [23] B. C. Pan, R. Biswas, “On the influence of short and medium range order on the material band gap in hydrogenated amorphous silicon,” J. Appl. Phys., vol.96, pp.3818-3826, 2004. [24] Hyun Jung Lee, “Top-Gate Nanocrystalline Silicon Thin Film Transistors,” Ph.D. thesis, Univ. of Waterloo, 2008. [25] A. Matsuda, “Growth mechanism of microcrystalline silicon obtained from reactive plasmas,” Thin Solid Films, vol.337, no.1, pp.1-6, 1999. 第二章參考文獻 [1] 羅吉宗(民94)。薄膜科技與應用。頁數:第四章24-26。 [2] 白木 靖寬 / 吉田 貞史(民95)。薄膜工程學(二版)。台北市:全華科技圖書股份有限公司。頁數:第二章66-71。 [3] William Chang, “AKT PECVD Process Introduction.” [4] 汪建民(民95)。材料分析(Materials Analysis)。新竹縣:中國材料科學學會。頁數:122-124 [5] 羅聖全, “電子顯微鏡介紹-SEM,” http://www.materialsnet.com.tw, 2004. [6] C. V. Raman, K. S. Krishnan, “A New Type of Secondary Radiation,” Nature, vol.121, pp.501-502, 1928. [7] Rajinder Singh, “C. V. Raman and the Discovery of the Raman Effect,” Phys. perspect., vol.4, pp.399-420, 2002. [8] 汪建民(民95)。材料分析(Materials Analysis)。新竹縣:中國材料科學學會。頁數:659-665 [9] Y. Q. Fu, J. K. Luo, S. B. Milne, A. J. Flewitt, W. I. Milne, “Residual stress in amorphous and nanocrystalline Si films prepared by PECVD with hydrogen dilution,” Mater. Sci. and Eng. B, vol.124, pp.132-137, 2005. [10] V. Paillard, P. Puech, and R. Sirvin, “Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry,” J. Appl. Phys., vol.90, pp.3276-3279, 2001. [11] 奈米中心,Jasco V-570 UV/Vis/NIR Spectrophotometer使用教學手冊 [12] Light Ports Inc, http://www.lightports.com. [13] Ferdinand P. Bear, E. Russell Johnston, John T. DeWolf, Mechanics of materials. McGraw-Hill, 2002, pp.61-67. [14] C. F. Anthony, Introduction to Contact Mechanics. Springer, Berlin, 2000, pp.201-218. [15] K. L. Johnson, Contact Mechanics. Cambridge University Press, 1985. [16] C. F. Anthony, Introduction to Contact Mechanics. Springer, Berlin, 2000, pp.189-199. [17] Rong Yang, Taihua Zhang, Peng Jiang, and Yilong Bai, “Experimental verification and theoretical analysis of the relationships between hardness, elastic modulus, and the work of indentation,” Appl. Phys. Letts., vol. 92, pp.231906-231909, 2008. [18] ISO 14577-1, “Metallic Materials-Instrumented Indentation Test for Hardness and Materials Parameters Part 1: Test Method,” http://www.iso.org/iso/iso_catalogue/catalogue_tc/catalogue_detail.htm?csnumber=30104, 2002. [19] ISO 14577-2, “Metallic Materials-Instrumented Indentation Test for Hardness and Materials Parameters Part 2: Verification and Calibration of Testing Machines,” http://www.iso.org/iso/iso_catalogue/catalogue_tc/catalogue_detail.htm?csnumber=30543, 2002. [20] ISO 14577-3, “Metallic Materials-Instrumented Indentation Test for Hardness and Materials Parameters Part3: Calibration of Reference Blocks,” http://www.iso.org/iso/iso_ catalogue/catalogue_tc/catalogue detail.htm?csnumber =32193, 2002. [21] ISO 14577-4, “Metallic Materials-Instrumented Indentation Test for Hardness and Materials Parameters Part 4: Test Method for Coatings,” http://www.iso.org/iso/iso_catalogue/catalogue_tc/catalogue_detail.htm?csnumber=39228, 2002. [22] ASTM E 2546–07, “Standard Practice for Instrumented Indentation Testing,” http://www.astm.org/SNEWS/SEPTEMBER_2007/acte_sep07.html, 2007. [23] W. C. Oliver and G. M. Pharr, “An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments,” J. Mater. Res., vol.7, pp.1564-1583, 1992. [24] Jiann Shiung Chen, Jenq Gong Duh, “Indentation behavior and Young’s modulus evaluation in electroless Ni modified CrN coating on mild steel,” Surface and Coatings Technology, vol.139, pp.6-13, 2001. 第三章參考文獻 [1] P. K. Weimer, “An Evaporated Thin Film Triode,” IRE-AIEE Device Res. Conf., 1961. [2] P. K. Weimer, “The TFT-A New Thin-Film Transistor,” Proc. IRE, vol.50, pp.1462-1469, 1962. [3] P. G. LeComber, W. E. Spear, and A. Gaith, Electronic Letters, “Amorphous silicon Field-Effect Devices and Possible Applications,” vol.15, pp.179-181, 1979. [4] Cherie R. Kagan and Paul Andry, Thin-Film Transistors. Marcel Dekker, Inc., 2003, pp.38-39. [5] Cherie R. Kagan and Paul Andry, Thin-Film Transistors. Marcel Dekker, Inc., 2003. [6] D. Dosev, T. Ytterdal, J. Pallares, L. F. Marsal, and B. Iñíguez, “DC SPICE model for nanocrystalline and microcrystalline silicon TFTs” IEEE Trans. on electron devices, vol.49, no.11, pp.1979-1984, 2002. [7] Martin J. Powell, “The physics of amorphous-silicon thin-film transistors,” IEEE Trans. on Electron Devices, vol.36, no.12, pp.2753-2763, 1989. [8] 施敏(民92)。半導體元件物理與製作技術(二版)。新竹市:國立交通大學出版社。頁數:607 第四章參考文獻 [1] U. K. Das, E. Centurioni, S. Morrison, and A. Madan, “A critical role of p/i interface in nanocrystalline single junction p-i-n solar cells,” 3rd World Conference on Photovoltaic Energy Conversion, vol.2, pp.1776-1779, 2003. [2] P. Kumar, F. Zhu, A. Madan, “Electrical and structural properties of nano-crystalline silicon intrinsic layers for nano-crystalline silicon solar cells prepared by very high frequency plasma chemical vapor deposition,” Int. J. Hydrogen Energy, vol.33, no.14, pp3938-3944, 2008. 第五章參考文獻 [1] S. Zhang, X. Liao, L. Raniero, E. Fortunato, Y. Xu, G. Kong, H. Aguas, I. Ferreira, R. Martins, “Silicon thin films prepared in the transition region and their use in solar cells,” Solar Energy Materials & Solar Cells, vol.90, pp.3001-3008, 2006. [2] Huiying Hao, Xianbo Liao, Xiangbo Zeng, Hongwei Diao, Ying Xu, Guanglin Kong, “Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon,” Journal of Crystal Growth, vol.281, pp344-348,2005. | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/26323 | - |
dc.description.abstract | 我們利用電漿輔助化學氣相沈積法在玻璃及聚亞醯胺基板上成長不同氫稀釋比率的非晶及奈米矽薄膜。利用紫外光反射光譜技術與拉曼光譜技術我們獲知薄膜的結晶性以及其本質應力。矽薄膜的彈性模數則由拉伸試驗及奈米壓痕試驗中獲得。
在紫外光反射光譜中,我們發現矽薄膜約從氫稀釋比率為20至30間開始產生結晶,也就是非晶與奈米晶的轉換相點在氫稀釋比率為20至30間;轉換相點與拉曼光譜結果相同,且隨著氫稀釋比率增加,奈米矽的結晶率會隨著增加,氫稀釋比率為90有最大的結晶率為71%。另外從拉曼光譜中我們發現直接沈積在玻璃基板上的奈米矽薄膜呈現張應力,此張應力隨著氫稀釋比增加而增加;但鍍有氮化矽緩衝層上的矽薄膜則呈現相反的趨勢,其張應力隨著氫稀釋比增加而降低。由拉伸試驗及奈米壓痕試驗可以發現其楊氏模數隨著氫稀釋比率變化的趨勢類似,當矽薄膜從非晶相轉變成奈米相時,其楊氏模數會有明顯增加。由拉伸試驗與奈米壓痕試驗,我們可以估計奈米矽的楊氏模數約在110GPa左右。 我們接著將不同氫稀釋比率的矽薄膜,即從非晶到奈米晶一系列的薄膜,應用於下閘極結構之薄膜電晶體中,並探討其電性與穩定性的差異。針對電穩定性的研究,利用偏壓與偏流的方式來測試薄膜電晶體的穩定性。製作的奈米矽薄膜電晶體的臨界電壓約在6V左右,我們發現隨著氫稀釋比率提高,場效遷移率有漸增的趨勢,場效遷移率約在0.22~0.73cm2 V-1S-1,開關比約在105-107之間;且氫稀釋比率為60的薄膜電晶體有最大場效遷移率,可達0.73cm2 V-1S-1。在電穩定性測試方面,我們發現不管是偏壓或偏流的測試,主動層的氫稀釋比率在轉換相之間時,也就是氫稀釋比率為20至30,其薄膜電晶體有最佳的電穩定性。 | zh_TW |
dc.description.abstract | Silicon thin films with different hydrogen dilution ratios (H2/SiH4) are deposited on glass and polyimide at a substrate temperature of 200 | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T07:06:20Z (GMT). No. of bitstreams: 1 ntu-97-R95941034-1.pdf: 9776225 bytes, checksum: e1d7fa0ab55e5aa3dd21c5e7267da8a3 (MD5) Previous issue date: 2008 | en |
dc.description.tableofcontents | 致謝 I
中文摘要 II Abstract III 內容 IV 圖目錄 VI 表目錄 IX 第一章 簡介 p.1 1.1 奈米矽薄膜背景與動機 1 1.2 奈米矽薄膜成長機制 3 1.2.1 表面擴散模型 3 1.2.2 蝕刻模型 4 1.2.3 化學退火模型 4 1.3 論文架構 5 1.4 第一章參考文獻 6 第二章 薄膜沈積設備及量測儀器介紹 p.8 2.1 基板清洗流程 8 2.2 薄膜沈積儀器介紹 8 2.2.1 薄膜沈積-電漿輔助化學氣相沈積系統 8 2.2.2 金屬薄膜沈積-電子束蒸鍍 10 2.3 量測儀器介紹 10 2.3.1 表面輪廓儀 (surface profiler) 10 2.3.2 掃描式電子顯微鏡 (scanning electron microscopy) 11 2.3.3 拉曼光譜 (Raman spectroscopy) 11 2.3.4 紫外光反射光譜(UV-reflectance spectroscopy) 13 2.3.5 拉伸試驗 (tensile test) 14 2.3.6 奈米壓痕試驗 (nano-indentation test) 16 2.4 第二章參考文獻 20 第三章 矽薄膜電晶體簡介與製造流程介紹 p.22 3.1 薄膜電晶體簡介 22 3.2 微影流程及參數設定 25 3.2.1 光阻塗佈 25 3.2.2 旋轉塗佈機 (spin coater) 26 3.2.3 曝光 (exposure) 26 3.2.4 顯影 (develop) 26 3.3 蝕刻流程及參數設定 27 3.4 下閘極薄膜電晶體的製作流程 27 3.5 電性量測參數設定與參數擷取 31 3.6 第三章參考文獻 32 第四章 非晶矽到奈米晶矽薄膜結構與機械特性 p.33 4.1 薄膜沈積參數 33 4.2 沈積速率結果與討論 34 4.3 掃描式電子顯微鏡分析結果與討論 35 4.4 拉曼光譜結果與討論 37 4.5 紫外光反射光譜結果與討論 45 4.6 拉伸試驗結果與討論 49 4.7 奈米壓痕試驗結果與討論 51 4.8 第四章參考文獻 54 第五章 非晶矽到奈米晶矽薄膜電晶體特性 p.55 5.1 薄膜電晶體完成圖 55 5.2 電性結果與討論 56 5.3 電穩定性結果與討論 63 5.3.1 偏壓(voltage bias stress)電穩定性 63 5.3.2 偏流(current bias stress )電穩定性 67 5.4 第五章參考文獻 71 第六章 結論及未來待續研究 p.72 | |
dc.language.iso | zh-TW | |
dc.title | 奈米矽薄膜機械性質及其在薄膜電晶體應用之研究 | zh_TW |
dc.title | The Mechanical Properties of Nanocrystalline Silicon Thin Films and Their Applications on Thin Film Transistors | en |
dc.type | Thesis | |
dc.date.schoolyear | 96-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳志毅(Chi-Hi Wu),魏大欽(Ta-Chin Wei),陳建彰(Jian-Zhang Chen),李敏鴻(Min-Hung Lee) | |
dc.subject.keyword | 奈米矽,拉曼光譜,機械性質,薄膜電晶體,穩定度, | zh_TW |
dc.subject.keyword | nanocrystalline silicon,Raman spectrum,mechanical property,thin film transistor,stability, | en |
dc.relation.page | 72 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2008-09-01 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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