請用此 Handle URI 來引用此文件:
http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25696
完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 管傑雄 | |
dc.contributor.author | I-Kuan Wu | en |
dc.contributor.author | 吳奕寬 | zh_TW |
dc.date.accessioned | 2021-06-08T06:25:20Z | - |
dc.date.copyright | 2011-08-12 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-08-03 | |
dc.identifier.citation | [1] Y.C. King, T.J. King, C. Hu, “Charge-trap memory device fabrication by oxidation of Si1-xGex” IEEE Trans. Electron Devices, vol. 48, pp. 696-699,Apr. 2001
[2] C.W. Chiu, T.W. Liao, K.Y. Tsai, F.M. Wang, Y.W. Suen and C.H. Kuan, “Fabrication method of high-quality Ge nanocrystals on patterned Si substrates by local melting point control” Nanotechnology, 22 (2011), 275604 (5pp) [3] S.H. Tang, Edward Yi Chang, Mantu Hudait, J.S. Maa, C. W. Liu, G.L. Luo, H.D. Trinh, and Y.H. Su, ”High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate” Appl. Phys. Lett. 98,161905 (2011) [4] C.H. Tu, T.C. Chang, P.T. Liu, T.H. Yang, H.W. Zan, C.Y. Chang,” A novel method for growing polycrystalline Ge layer by using UHVCVD” Surface & Coatings Technology, 200, (2006), pp.3261 – 3264 [5] K.I. Han, Y.M. Park, S. Kim, S.H. Choi, K.J. Kim, I.H. Park, and B.G. Park, “Enhancement of Memory Performance Using Doubly Stacked Si-Nanocrystal Floating Gates Prepared by Ion Beam Sputtering in UHV” IEEE Transactions on Electron Devices, VOL. 54, NO. 2, Feb. 2007, pp.359-362 [6] B.C. Hsu, S.T. Chang, T.C. Chen, P.S. Kuo, P.S. Chen, Z. Pei and C.W. Liu, “A High Efficient 820 nm MOS Ge Quantum Dot Photodetector” IEEE Electron Device Letters, VOL. 24, NO. 5, May. 2003, pp.318-320 [7] P. Schittenhelm, C. Engel, F. Findeis, and G. Abstreiter, “Self-assembled Ge dots: Growth, characterization, ordering, and applications” Journal of Vacuum Science & Technology B, Vol. 16.(1998) [8] A.R. Woll, P. Rugheimer, M.A. Lagally, “Strain engineering, self-assembly, and nanoarchitectures in thin SiGe films on Si” Materials Science and Engineering B, pp.94-101, (2002). [9] Y.R. Chen, C.H. Kuan, Y.W. Suen, Y.H. Peng, P.S. Chen, C.H. Chao, E.Z. Liang, C.F. Lin, and H.C. Lo, ”High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array”, Appl. Phys. Lett, 93, 083101, (2008) [10] 賴衍溥 ”於具二維孔洞陣列結構之矽(001)基板上成長有序排列之鍺點” 國立台灣大學電子工程研究所 碩士論文 Jun.2009 [11] K.H. Chiang, S.W. Lu, Y.H. Peng, C.H. Kuan,”Characterization and modeling of fast traps in thermal agglomerating germanium nanocrystal metal oxide semiconductor capacitor” Journal of Applied Physics 104, 014506 (2008) [12] 呂紹維 “利用陷阱模型研究鍺奈米晶體金氧半結構” 國立台灣大學電子工程研究所 碩士論文 Jul.2006 [13] Kerim R. Allakhverdiev, Deliani Lovera, Volker Altstädt, Philipp Schreier, and Lothar Kador, ” Confocal raman microscopy: non-destructive materials analysis with micrometer resolution” Rev. Adv. Mater. Sci., 20(2009), pp.77-84 [14] R. Loudon, “The Raman effect in crystals” Advances in Physics, 2001, Vol.50, No. 7, pp.813-864 [15] Akhilesh K. Arora, M. Rajalakshmi, T. R. Ravindran, “Phonon Confinement in Nanostructured Materials” Encyclopedia of Nanoscience and Nanotechnology, (2004), Edited by H. S. Nalwa, Volume 8, pp.499–512 [16] H. Richter, Z.P. Wang, and L. Ley, “The one phonon Raman spectrum in micro- crystalline silicon” Solid State Communications, Vol. 39, Aug. 1981, pp. 625-629 [17] I. H. Campbell, and P. M. Fauchet, “The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors” Solid State Commun. Volume 58, Issue 10, June 1986, pp. 739-741 [18] A.V. Kolobov, “Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations” Journal of Applied Physics, Volume 87, Number 6, Mar. 2000, pp. 2926-2930 [19] T.R. Yang, M.M. Dvoynenko, Z.C. Feng, and H.H. Cheng” Raman spectroscopy of self-assembled Ge islands on Si” Eur. Phys. J. B 31, (2003), pp. 41-45 [20] U. Serincan, G. Kartopu, A. Guennes, T.G. Finstad, R. Turan,Y. Ekinci and S.C. Bayliss, ” Characterization of Ge nanocrystals embedded in SiO2 by Raman spectroscopy” Semicond. Sci. Technol. 19, (2004), pp. 247–251 [21] X. Wang, Ali Shakouri, B. Yu, X. Sun, and Meyya Meyyappan, “Study of phonon modes in germanium nanowires” Journal of Applied Physics, 102, (2007), 014304 [22] R. Jalilian, G.U. Sumanasekera, H. Chandrasekharan, and M.K. Sunkara, ” Phonon confinement and laser heating effects in Germanium nanowires” Physical Review B,74, (2006), 155421 [23] K.R. Zhu, M.S. Zhang, Q. Chen, Z. Yin, “Size and phonon-confinement effects on low-frequency Raman mode of anatase TiO2 nanocrystal” Physics Letters A, 340 (2005), pp. 220–227 | |
dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25696 | - |
dc.description.abstract | 在本論文中,我們將以電子束微影搭配雷射熱退火技術,在平面矽基板上製作出規則排列的結晶奈米鍺點,因其在空間上具有規則排列以及大小均勻等的特性,在光學及電子元件上均能有多樣的應用。首先我們使用了電子束微影系統在矽基板上的光阻層定義出規則性排列的孔洞,接著經由電子束熱蒸鍍上一層非晶鍺薄膜,經lift-off步驟後,可得到如圖形定義的整齊排列非晶鍺柱。最後再以準分子雷射進行熱退火,即可得到自我聚集的球型結晶奈米鍺點。在此,我們發現以單發低能量雷射對樣品進行多次逐步修補的方式,會得到最佳的結晶效果。
經由拉曼光譜系統對樣品分析檢測,我們可以確信所形成的量子點已具有結晶的品質,另外由FEB影像的輔佐,可看出形成的奈米鍺點大小十分的均勻,且在空間上可維持整齊的規則排列。 | zh_TW |
dc.description.abstract | In our study, we fabricated the sample of ordered germanium nanocrystals by means of E-beam lithography and excimer-laser annealing on a plane silicon substrate. The technique would be useful at electron and optical applications due to its well-organized appearance and uniformity in size. E-beam lithography is firstly used to define ordered hole array on the photo resist coating on silicon substrate ,then a amorphous germanium film is deposited by E-beam thermal evaporator. After lifting-off and excimer-laser annealing, ordered self-assembled germanium nanocrystals can be obtained. We noticed that with lower laser energy and multiple shots, the crystallinity is better than high laser energy with single shot.
Raman spectrum is used to analyze these nanocrystals, besides, FEB image can be a proof that the nanocrystal size is quite uniform. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T06:25:20Z (GMT). No. of bitstreams: 1 ntu-100-R98943114-1.pdf: 12474192 bytes, checksum: d3aaefb369c7fa76d93f212781687b29 (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | 第一章 概論…………………………………………………………………………… 1
1.1 前言………………………………………………………………………… 1 1.2 鍺奈米晶體的發展………………………………………………………… 2 1.3 規則排列之鍺晶體製作技術……………………………………………… 3 1.4 隨機排列與二維規則排列鍺奈米晶體綜合比較………………………… 4 第二章 基本理論……………………………………………………………………… 5 2.1 準分子雷射………………………………………………………………… 5 2.2 準分子雷射加熱效應……………………………………………………… 7 2.3 拉曼光譜系統……………………………………………………………… 9 2.3.1 基本理論……………………………………………………………… 9 2.3.2 共軛焦顯微鏡(Confocal microscope)……………………………… 10 2.3.3 C-focus……………………………………………………………… 11 2.3.4 半高寬(FWHM)檢測結晶品質…………………………………… 11 2.4 聲子侷限效應(Phonon confinement)…………………………………… 12 第三章 元件製備…………………………………………………………………… 15 3.1 製程/量測儀器簡介……………………………………………………… 15 3.1.1 電子槍蒸鍍系統(E-Gun)…………………………………………… 15 3.1.2 電子束微影(E-Beam Lithography)………………………………… 16 3.1.3 掃描式電子顯微鏡(SEM)………………………………………… 17 3.1.4 聚焦離子束(FIB)…………………………………………………… 18 3.2元件製作流程……………………………………………………………… 19 3.2.1 光阻塗佈(Spin Coating)…………………………………………… 20 3.2.2 電子束微影(E-beam lithography)………………………………… 20 3.2.3 顯影(Develop) ……………………………………………………… 22 3.2.4 E-gun熱蒸鍍鍺層…………………………………………………… 22 3.2.5 Lift-off……………………………………………………………… 23 3.2.6 RIE蝕刻基板……………………………………………………… 23 3.2.7 準分子雷射熱退火………………………………………………… 24 3.2.8 鍺奈米點形成……………………………………………………… 24 3.3 一維規則排列奈米鍺點………………………………………………… 25 3.4 直線參數推論至孔洞陣列……………………………………………… 28 3.4.1 熱蒸鍍及lift-off問題……………………………………………… 29 3.4.2 基板結構問題……………………………………………………… 31 3.4.3 雷射能量問題……………………………………………………… 31 3.5 二維規則排列奈米鍺點………………………………………………… 32 第四章 實驗結果與討論…………………………………………………………… 33 4.1 二維規則排列鍺奈米點-拉曼分析……………………………………… 33 4.2 共軛焦系統(Confocal)…………………………………………………… 35 4.3 Confocal修正-拉曼重新量測…………………………………………… 40 4.4 樣品最終形貌…………………………………………………………… 42 第五章 結論………………………………………………………………………… 45 參考文獻……………………………………………………………………………… 46 | |
dc.language.iso | zh-TW | |
dc.title | 以電子束微影與準分子雷射熱退火技術製作規則排列之結晶奈米鍺點 | zh_TW |
dc.title | Fabrication of Ordered Germanium Nanocrystals Using E-beam Lithography and Excimer Laser Annealing | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 林致廷,孫允武,孫建文,田維誠 | |
dc.subject.keyword | 電子束微影,電子束熱蒸鍍,準分子雷射,規則排列,奈米鍺點,拉曼, | zh_TW |
dc.subject.keyword | E-beam lithography,E-beam thermal evaporation,Excimer-laser,ordered,Germanium nanocrystal,Raman, | en |
dc.relation.page | 48 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2011-08-03 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
顯示於系所單位: | 電子工程學研究所 |
文件中的檔案:
檔案 | 大小 | 格式 | |
---|---|---|---|
ntu-100-1.pdf 目前未授權公開取用 | 12.18 MB | Adobe PDF |
系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。