初鍍態鍺銻碲相變化薄膜上之記錄點形成研究

Abstract

在本論文中, 我們將利用讀、寫波長分別為633 nm及658nm之雷射泵探系統研究不同膜層結構的初鍍態相變化薄膜之記錄點形式，並討論在不同入射功率及雷射脈衝時間條件下，相變化薄膜所形成的記錄點形式之變化;且經由原子力顯微儀(AFM)對記錄點表面形貌的掃探結果，我們可充份且完整地了解相變化記錄點的形成過程。從這些量測結果中可歸納出記錄點光學影像、表面形貌和反射率變化過程彼此間的對應關係，也釐清了各薄膜膜層對於光熱擴散所扮演的角色。此外，我們亦研究以氧化鋅(ZnOx)薄膜作為近場光學主動層的多層膜結構，發現氧化鋅(ZnOx)薄膜具有提高反射率以及縮小記錄點的效果，此結果說明氧化鋅薄膜可提高對於奈米記錄點的解析能力，在光學儲存的應用上可藉以達到次世代超高儲存容量的目的。最後，本研究中的相變化薄膜之特殊光熱效果也可應用於未來的奈米光子學範疇中。

Abstract In this thesis, we study the formation of recording marks on as-deposited Ge2Sb2Te5 phase-change nano thin film. We use an atomic force microscopy (AFM) and optical pump-probe system to investigate the topographic change and optical-thermal dependence of marks formation. From the experimental results, the process of recording mark formation is well studied in both incident power and pulse duration aspects. Through the complete experiments, the arbitraty pattern of recording marks can be written on phase-change material precisely by changing layerd structure and tuning incident power and pulse duration. For the further study in ultra-high density recording, we apply a zinc oxide (ZnOx) nano thin film on phase-change recording layer. The results show the tiny bright spots and specific properties can be obtained by the interaction between ZnOx nano thin film and the nanostructured recording marks.