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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 陳永芳 | |
| dc.contributor.author | Jia-Syu Lin | en |
| dc.contributor.author | 林家旭 | zh_TW |
| dc.date.accessioned | 2021-06-08T06:10:58Z | - |
| dc.date.copyright | 2007-07-20 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-06 | |
| dc.identifier.citation | 1 a) J. Hu, T. W. Odom, C. M. Lieber, Acc. Chem. Res. 1999, 32, 435; b) G. R. Patzke, F. Krumeich, R. Nesper, Angew. Chem. 2002, 114, 2554; Angew. Chem. Int. Ed. 2002, 41, 2446; c) J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H. Choi, P. Yang, Nature 2003, 422, 599; d) S. B. Lee, D. T. Mitchell, L. Trofin, T. K. Nevanen, H. Scderlund, C. R. Martin, Science 2002, 296, 2198; e) J. Sha, J. Niu, X. Ma, J. Xu, X. Zhang, Q. Yang, D. Yang, Adv. Mater. 2002, 14, 1219.
2 a) C. R. Martin, Science 1994, 266, 1961; b) T. M. Whitney, J. S. Jiang, P. C. Searson, C. L. Chien, Science 1993, 261, 1316. 3 T. Yanagishita, M. Sasaki, K. Nishio, H. Masuda, Adv. Mater. 2004, 16, 429. 4 W.-C. Yoo, J.-K. Lee, Adv. Mater. 2004, 16, 1097 5 a) K. Peng, Z. Huang, J. Zhu, Adv. Mater. 2004, 16, 73; b) J. Luo, Z. Huang, Y. Zhao, L. Zhang, J. Zhu, Adv. Mater. 2004, 16, 1512. 6 C. R. Martin, Adv. Mater. 1991, 3, 457. 7 a) Q. Lu, F. Gao, S. Komarneni, T. E. Mallouk, J. Am. Chem. Soc. 2004, 126, 8650; b) F. Matsumoto, K. Nishio, H. Masuda, Adv. Mater. 2004, 16, 2105. 8 a) H. Q. Cao, Z. Xu, H. Sang, D. Sheng, C. Y. Tie, Adv. Mater. 2001, 13, 121; b) H. Q. Cao, C. Y. Tie, Z. Xu, J. M. Hong, H. Sang, Appl. Phys. Lett. 2001, 78, 1592; c) H. Q. Cao, Z. Xu, D. Sheng, J. M. Hong, H. Sang, Y. W. Du, J. Mater. Chem. 2001, 11, 958. 9 a) H. Masuda, K. Fukuda, Science 1995, 268, 1466; b) J. Verbeeck, O. I. Lebedev, G. V. Tendeloo, L. Cagnon, C. Bougerol, G. Tourillon, J. Electrochem. Soc. 2003, 150, E468 10 C. M. Lieber, Sci. Am. 2001, 285, 58. 11 F. Favier, E. C. Walter, M. P. Zach, T. Benter, R. M. Penner, Science 2001, 293, 2227. 12 C. J. Miller, C. A. Widrig, D. H. Charych, M. Majda, J. Phys. Chem. 92 (1988) 1928. 13 C. J. Brumlik, C. R. Martin, Anal. Chem. 64 (1992) 1201 14 H. Masuda, M. Ohya, K. Nishio, H. Ashio, M. Nakao, M. Nohtomi, A. Yokoo, T. Tamamura, Jpn. J. Appl. Phys. 39 (2000) 1039. 15 P. Takhistov, Biosens. Bioelectron. 19 (2004) 1445. 1. Scanning Electron Microscopy and X-ray Microanalysis, Dick Briggs, John Brady and Bob Newton, 2000 2. Scanning electron microscopy and x-ray microanalysis, Grahame Lawes, 1987 3. Scanning electron microscopy and X-ray microanalysis : a text for biologists, materials scientists, and geologists, 1939 4. SEM : a user's manual for materials science, Barbra L. Gabriel, 1985 1. J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H.-J. Choi, and P. Yang, Nature 422, 599 (2003). 2. Z. Liu, D. Zhang, S. han, C. Li, B. Lei, W. Lu, J. Fang, and C. Zhou, J. Am. Chem. Soc. 127, 6 (2005). 3. Y. J. Xing, Z. H. Xi, Z. Q. Xue, X. D. Zhang, J. H. Song, R. M. Wang, J. Xu, Y. Song, S. L. Zhang, and D. P. Yu, Appl. Phys. Lett. 83, 1689 (2003). 4. M. S. Sander, M. J. Côté, W. Gu, B. M. Kile, and C. P. Tripp, Adv. Mater. 16, 2052 (2004). 5. P. Kohli, M. Wirtz, and C. R. Martin, Electroanalysis 15, 9 (2004). 6. S. B. Lee, D. T. Mitchell, L. Trofin, T. K. Nevanen, H. Soderlund, and C. R. Martin Science 296, 2198 (2002). 7. Y. Feldman, E. Wasserman, D. J. Srolovitz, and R. Tenne, Science 267, 222 (1995). 8. L. Qu, G. Shi, X. Wu, and B. Fan, Adv. Mater. 16, 1200 (2004). 9. H. Shin, D.-K. Jeong, J. Lee, M. M. Sung, and J. Kim, Adv. Mater. 16, 1197 (2004). 10. Y. Li, J. Wang, Z. Deng, Y. Wu, X. Sun, D. Yu, and P. Yang, J. Am. Chem. Soc 123, 9904 (2001). 11. Y. Sun and Y. Xia, Adv. Mater. 16, 264 (2004). 12. R. Fan, Y. Wu, D. Li, M. Yue, A. Majumdar, and P. Yang, J. Am. Chem. Soc. 125, 5254 (2003). 13. H. Masudaand K. Fukuda, Science 268, 1466 (1995). 14. K. Nielsch, F. Muller, A. P. Li, and U. Gosele, Adv. Mater. Weinheim, Ger. 12, 582 (2000). 15. C. R. Martin, Science 266, 1961 (1994) 16. M. Lahav, T. Sehayek, A. Vaskevich, and I. Rubinstein, Angew. Chem. 116, 5734 (2004); Angew. Chem. Int. Ed. 42, 5576 (2003). 17. S. Yu, U. Welp, L. Z. Hua, A. Rydh, W. K. Kwok, and H. H. Wang, Chem. Mater. 17, 3445 (2005). 18. J. Bao, C. Tie, Z. Xu, Q. Zhou, D. Shen, and Q. Ma, Adv. Mater. 13, 1631 (2001). 19. A. P. Li, F. Mu..ler, A. Birner, K. Nielsch, and U. Go..sele, J Appl. Phys 84, 6023 (1998) 20. E.R. Holland, Y. Li, P. Abbott, P.R. Wilshaw, Displays 21 (2000) 99. 21. D. Almawlawi, N. Coombs, M. Moskovits, J. Appl. Phys. 70(1991) 4421. 22. V. F. Henley, in Anodic Oxidation of Aluminum and its Alloys, (Pergamon Press, New York, 1982), p. 1. and p. 51. 23. a) H. Masuda, M. Ohya, H. Asoh and K. Nishio, Jpn. J. Appl. Phys. Pt. 2 40, L1217 b) A. P. Li, F.Multer, A. Birner, K. Nielsch and U. Gosele, J. Vac. Sc. Technol. A 17, 1428 (1999) 24. G. E. Thompson, Thin Solid Films 297, 192 (1997). 25. O. Jessensky, F. Muller, and U. Gosele, J. Electrochem. Soc. 145, 3735 (1998). 26. A. P. Li, F. Muller, A. Birner, K. Nielsch, and U. Gosele, J. Appl. Phys. 84, 6023 (1998). 27. A. P. Li, F. Muller, A. Birner, K. Nielsch, and U. Gosele, J. Vac. Sci. Technol. A 17, 1428 (1999). 28. J. Randon, P. P. Mardilovich, A. N. Govyadinov, and R. Paterson, J. Coll. Int. Sci. 169, 335 (1995). 29. O. Jessenky, F. Muller, and U. Gosele, Appl. Phys. Lett. 72, 1173 (1998). 30. G. K. Singh, A. A. Golovin, and I. S. Aranson, Phys. Rev. B 73, 205422 (2006) 31. S. Zhao, H. Roberge, A. Yelon, and T. Veres, J. Am. Chem. Soc. 128, 12352 (2006). 32. E. C. Walter, B. J. Murray, F. Favier, G. kaltenpoth, M. Grunze, and R. M. Penner, J. Phys. Chem. B 106, 11407 (2002) 33. D. M. Davis and E. J. Podlaha, Electrochem. Solid-State Lett. 9, C62 (2006). 1. C. M. Lieber, Sci. Am. 285, 58 2001 2. Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, and H. Yan, Adv. Mater. ( Weinheim, Ger.) 15, 353 2003. 3. S. R. Nicewarner-Pena, R. G. Freeman, B. D. Reiss, L. He, D. J. Pena, I. D. Walton, R. Cromer, C. D. Keating, and M. J. Natan, Science 294, 137 2001. 4. D. J. Pena, J. K. N. Mbindyo, A. J. Carado, T. E. Mallouk, C. D. Keating, B. Razavi, and T. S. Mayer, J. Phys. Chem. B 106, 7458 2002. 5. J. Luo, L. Zhang, Y. J. Zhang, and J. Zhu, Adv. Mater. Weinheim, Ger. 14, 1413 2002. 6. C. H. Liu, W. C. Yiu, F. C. K. Au, J. X. Ding, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 83, 3168 2003. 7. Semiconductor Physics & Devices, Second Edition, Donald A. Neamen 1998 8. 半導體工程原理 李世鴻 2002 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25375 | - |
| dc.description.abstract | Anodic aluminum oxide membranes consisting of a well ordered hexagonal array of bottom-up nanopore were created by a two-step anodization process. The AAO membranes with various diameters have be synthesized by charging applied voltage. We use the AAO membranes as templates to grow (Cu, Ag)/(Zn, Sn) nanowires/nanotubes arrays by electrodeposition method. Well aligned Cu and Zn nanowires have been successfully fabricated. In addition, a double-layered structure of Cu/Zn was synthesized, after oxidization which turns into a p-Cu2O/n-ZnO junction, and can be used for nanoscale light emitting devices. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T06:10:58Z (GMT). No. of bitstreams: 1 ntu-96-R94222038-1.pdf: 1526391 bytes, checksum: 9788811ab06aee214ca4813137676861 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | Contents
List of Figures…………………………………………………………. ..Ⅲ Chapter 1 Introduction 1 References 3 Chapter 2 Background 5 2.1 Scanning Electron Microscopy (SEM) 5 2.2 Energy-dispersive X-ray spectroscopy (EDX) 13 References 16 Chapter 3 Growth Mechanism of Metal Nanotubes/Nanowires with AAO as template 17 3.1 Introduction 17 3.2 The structure and fabrication of AAO films 19 3.3 Growth mechanism of AAO 23 3.3.1 Barrier-type AAO films 23 3.3.2 Porous-type AAO films 26 3.4 Experimental details 29 3.5 Results and Discussion 35 References 47 Chapter 4 Cu2O-ZnO P-N Junction 50 4.1 Introduction 50 4.3 Experimental results 57 References 64 Chapter 5 Conclusion 65 | |
| dc.language.iso | en | |
| dc.title | 金屬奈米線/奈米管之成長機制與氧化銅-氧化鋅接面之製作 | zh_TW |
| dc.title | Growth Mechanism of Metal Nanowires/Nanotubes and Fabrication of Cu2O-ZnO Junction | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張顏暉,林泰源 | |
| dc.subject.keyword | 半導體,奈米管,奈米線,陽極氧化鋁,pn接面,電鍍, | zh_TW |
| dc.subject.keyword | semiconductor,nanowire,nanotube,anodic aluminum oxide,pn junction,electroplate, | en |
| dc.relation.page | 65 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2007-07-09 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 物理研究所 | zh_TW |
| 顯示於系所單位： | 物理學系 | |
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