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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 薛文証(Wen-Jen Hsueh) | |
dc.contributor.author | Hsing-Chi Chen | en |
dc.contributor.author | 陳星旗 | zh_TW |
dc.date.accessioned | 2021-06-08T06:03:07Z | - |
dc.date.copyright | 2007-07-27 | |
dc.date.issued | 2007 | |
dc.date.submitted | 2007-07-24 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25131 | - |
dc.description.abstract | 本論文的主要目的在於研究砷化鎵/砷化鋁鎵半導體超晶格結構之電子態。我們利用傳輸矩陣法去做分析,推導出超晶格結構之色散關係方程式與表面態方程式。同時藉著改變超晶格結構中之量子阱層厚度、能障層厚度與高度、還有表面層之能障高度等參數,比較出一系列的迷你能帶與表面態圖。由這些圖可以讓我們清楚的看出電子在不同超晶格結構下的傳遞情形。
研究超晶格表面態的部分,在一些特殊例子中,使用傳統方法分析不僅假根數目較多,且容易造成表面態的誤判,而本方法可避免以上缺點。在研究表面態與迷你能帶部分,對於表面對稱式的超晶格結構,我們發現二層的超晶格結構是無法找出表面態的,但在四層的超晶格結構中卻有表面態的出現,尤其是在雙能障基底的例子中,表面態會出現的更明顯。 | zh_TW |
dc.description.abstract | The main purpose of this thesis is to study the electron surface states of GaAs/AlGaAs superlattices. In the study, transfer matrix method is used to derive the dispersion relation equation and the surface states equation of superlattices. In addition, the results of minibands and surface states by changing the parameters of superlattices, including quantum well layer width, barrier layer width and potential height, and surface layer potential height are studied. From these results, the electron transportation in different superlattices structures is presented.
In calculating surface states, it may obtain more spurious solutions and mistakes in some special cases by traditional method. But these problems can be avoided by the present method.When analyzing surface states and minibands, surface states do not appear in the two-layer symmetric termination superlattices, but they appear in the four-layer ones, especially for the two-barrier basis superlattices, surface states appear more obviously. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T06:03:07Z (GMT). No. of bitstreams: 1 ntu-96-R94525037-1.pdf: 1164952 bytes, checksum: 9629bca686c8231a113c250ae845e467 (MD5) Previous issue date: 2007 | en |
dc.description.tableofcontents | 中文摘要 i
英文摘要 ii 目錄 iii 圖目錄 v 表目錄 xi 符號表 xii 第一章 導論 1 1.1 背景與研究動機 1 1.2 文獻回顧 2 1.3 論文架構 4 第二章 半導體超晶格結構特性 5 2.1 半導體基本特性 5 2.2 量子效應9 2.3超晶格結構12 第三章 超晶格分析理論22 3.1二層超晶格色散關係22 3.2 多層超晶格色散關係27 3.3 多層超晶格表面態29 第四章 數值模擬與分析34 4.1色散關係與表面態分析方法比較34 4.1.1色散關係34 4.1.2表面態36 4.2二層超晶格表面態與迷你能帶41 4.2.1超晶格迷你能帶41 4.2.2超晶格表面態與迷你能帶43 4.3四層超晶格表面態與迷你能帶46 4.3.1雙能阱基底超晶格46 4.3.2雙能障基底超晶格48 4.3.3位能高度影嚮50 第五章 結論與展望115 5.1結論115 5.2未來與展望116 參考文獻117 | |
dc.language.iso | zh-TW | |
dc.title | 半導體超晶格之電子表面態 | zh_TW |
dc.title | Electronic surface states of semiconductor superlattices | en |
dc.type | Thesis | |
dc.date.schoolyear | 95-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 吳忠霖(John-Ling Wu),管傑雄(Chieh-Hsiung Kuan),孔慶華(Chin-Hwa Kong) | |
dc.subject.keyword | 超晶格,砷化鎵/砷化鋁鎵,傳輸矩陣,表面態,迷你能帶, | zh_TW |
dc.subject.keyword | superlattices,GaAs/AlGaAs,transfer matrix method,surface states,miniband, | en |
dc.relation.page | 120 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2007-07-26 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 工程科學及海洋工程學研究所 | zh_TW |
顯示於系所單位: | 工程科學及海洋工程學系 |
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