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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25009完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 彭隆瀚 | |
| dc.contributor.author | Yin-Shuan Chin | en |
| dc.contributor.author | 金胤軒 | zh_TW |
| dc.date.accessioned | 2021-06-08T06:00:08Z | - |
| dc.date.copyright | 2007-08-01 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-07-30 | |
| dc.identifier.citation | 參考文獻
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/25009 | - |
| dc.description.abstract | 中文摘要
本研究參考傳統歐姆接觸製程，設計元件的歐姆接觸，並利用環形傳輸線模型(Circular transmission line model，CTLM)，蒸鍍金屬鈦/鋁/鈦/金(30 nm/120 nm/30 nm/150 nm)，在800度30秒的熱退火條件下，製作出0.47 Ω-mm的歐姆接觸電阻值；並發展歐姆掘入製程，即在歐姆接觸金屬之製作前，先使用蝕刻法，移去淺層歐姆接觸區域之氮化鋁鎵，期望得到增強的歐姆接觸特性。我們使用原子力顯微鏡(Atomic force microscope, AFM)與X射線光電子能譜儀(X-ray photoelectron spectroscopy, XPS)，分析歐姆掘入製程完成的樣品表面狀態，並量測得其歐姆接觸電阻值為從0.47 Ω-mm降低至0.31 Ω-mm，然而片電阻的變化也從385 Ω/sq增加到489 Ω/sq。 本研究繼而將歐姆掘入製程整合進入氮化鋁鎵/氮化鎵高電子遷移率場效電晶體製程中，並針對整合前後的差異，以閘極長度與寬度為2 | zh_TW |
| dc.description.abstract | Abstract
We investigate methods of improving the electric properties of AlGaN/GaN field effect transistor (FET). An ohmic contact resistance of 0.47 | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T06:00:08Z (GMT). No. of bitstreams: 1 ntu-96-J94941018-1.pdf: 4084332 bytes, checksum: 4994f5b4258e4245529fd9a28c719fe4 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 目錄
第一章 1 導論 1 §1-1 研究動機 1 §1-2 論文架構 3 第二章 4 氮化鋁鎵/氮化鎵異質結構場效電晶體工作原理與感應耦合電漿蝕刻 4 §2-1 氮化鋁鎵/氮化鎵高電子遷移率場效電晶體介紹 4 §2-2 歐姆接觸 10 §2-2-1 歐姆掘入製程 13 §2-3 環形傳輸線模型原理 14 §2-4 蕭特基接觸原理 16 §2-5 感應式耦合電漿蝕刻 19 §2-5-1 物理性蝕刻 20 §2-5-2 化學性蝕刻 20 §2-5-3 離子反應蝕刻 21 §2-6 電流崩塌(CURRENT COLLAPSE)效應 21 第三章 24 氮化鋁鎵/氮化鎵元件製程 24 §3-1 元件隔離製程製作 24 §3-2 感應式電漿蝕刻歐姆掘入製程 25 §3-3 環形傳輸線模型製作 28 §3-5 氮化鋁鎵/氮化鎵高電子遷移率場效電晶體製作 29 第四章 40 氮化鋁鎵/氮化鎵量測結果與討論 40 §4-1 歐姆掘入製程與歐姆接觸量測分析 40 §4-1-1 歐姆掘入製程蝕刻率量測 40 §4-1-2 歐姆掘入製程蝕刻後表面分析 44 §4-1-3 歐姆接觸之表面處理分析 47 §4-2 歐姆接觸與歐姆掘入之環形傳輸線模型量測 50 §4-3 歐姆掘入製程前後之電晶體元件電性量測 55 §4-4 電流崩塌(CURRENT COLLAPSE)量測 59 §4-5 鈍化處理後之元件電性量測 62 第五章 65 結論 65 §5-1 結論 65 §5-2 未來展望 66 參考文獻 67 | |
| dc.language.iso | zh-TW | |
| dc.subject | 歐姆接觸 | zh_TW |
| dc.subject | 氮化鋁鎵/氮化鎵高電子遷移率場效電晶體 | zh_TW |
| dc.subject | 歐姆掘入 | zh_TW |
| dc.subject | Ohmic digging | en |
| dc.subject | Ohmic contact | en |
| dc.subject | AlGaN/GaN HEMT | en |
| dc.title | 氮化鋁鎵/氮化鎵高電子遷移率場效電晶體之製作與特性研究 | zh_TW |
| dc.title | Fabrication and Characterization of AlGaN/GaN High Electron Mobility Field Effect Transistor | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 張守進,郭光宇,黃建璋,李文欽 | |
| dc.subject.keyword | 氮化鋁鎵/氮化鎵高電子遷移率場效電晶體,歐姆接觸,歐姆掘入, | zh_TW |
| dc.subject.keyword | AlGaN/GaN HEMT,Ohmic contact,Ohmic digging, | en |
| dc.relation.page | 70 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2007-07-31 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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| ntu-96-1.pdf 未授權公開取用 | 3.99 MB | Adobe PDF |
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