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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 黃天偉(Tian-Wei Huang) | |
| dc.contributor.author | Shin-Gann Wu | en |
| dc.contributor.author | 巫新淦 | zh_TW |
| dc.date.accessioned | 2021-06-08T05:58:02Z | - |
| dc.date.copyright | 2007-09-03 | |
| dc.date.issued | 2007 | |
| dc.date.submitted | 2007-08-30 | |
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Banyamin, J. Y. Liang, and C. S. Aitchison, “A new high gain distributed amplifier using cascaded single stage distributed amplifiers,” in IEICE APMC’98, Yokohama, Japan, Dec. 1998, pp. 753-756. [17] B. Y. Banyamin, J. Y. Liang, C. S. Aitchison, and M. Berwick, “Low noise high-gain distributed preamplifiers using cascaded single stage distributed amplifier configurations,” IEICE Trans. Electron., vol. E82-C, no. 7, pp. 1039-1046, July 1999. [18] B. Y. Banyamin and M. Berwick, “The gain advantages of four cascaded single stage distributed amplifier configurations,” in IEEE MTT-S Int. Microwave Symp. Dig., Boston, MA, June 11-16, 2000, pp. 1325-1328. [19] Thomas T. Y. Wong, Fundamentals of Distributed Amplification, Artech House, 1993. [20] W. S. Percival, “Thermionic value circuits,” British Patent 460562, Tan. 1937. [21] J. B. Beyer, et al., “Wideband monolithic microwave amplifier study,” ONR Rep. NR243-033, Sept. 1983. [22] M. 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Nauwelaers, “GaAs and InP-based dual-gate HEMTs for high-gain MMIC amplifiers,” 1995 International IEEE GaAs Symposium Digest, vol. 1, pp. 161-166, June, 1995. [28] J. Pusl, et al., “Capacitive-division traveling-wave amplifier with 340 GHz gain-bandwidth product,” IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp. 175-178, 1995. [29] Reza Majidi-Ahy, et al., “5-100 GHz InP coplanar waveguide MMIC distributed amplifier,” IEEE Trans. Microwave Theory and Techniques, vol. 38, pp. 1986-1993, Dec. 1990. [30] K. W. Kobayashi, et al., “A 2-32 GHz coplanar waveguide InAlAs/InGaAs-InP HBT cascode distributed amplifier,” IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp. 195-198, 1995. [31] K. W. Kobayashi, et al., “A 50-MHz-55-GHz multidecade InP-based HBT cascode distributed amplifier,” IEEE Microwave and Guided Wave Letters, vol. 7, pp. 353-355, Oct. 1997. [32] C. J. Madden, R. L. Van, Tuyl/Minh V. Le, L. D. Nguyen, “A 17 dB gain, 0.1-70 GHz InP HEMT amplifier IC,” 1994 International Solid-State Circuits Conference Digest, vol. 1, pp. 178-179, 1994. [33] B. Y. Banyamin, M. Berwick, “Analysis of the performance of four-cascaded single-stage distributed amplifiers ,” IEEE Trans. on Microwave Theory and Tech., vol. 48, no. 12, pp. 2657-2663, Dec., 2000. [34] Derek Shaeffer, Thomas H. Lee, “The Design and Implementation of Low-Power CMOS Radio Receivers,” Kluwer Academic Publishers, 1999. [35] K. Chang, I. Bahl, and V. Nair, “RF and Microwave Circuit and Component Design for Wireless Systems,” John Wiley & Sons, Inc., 2002. [36] 呂學士編譯, 本城和彥原著, “微波通訊半導體電路,” 全華, 2001. [37] 袁帝文, 王岳華, 謝孟翰, 王弘毅編著, “高頻通訊電路設計,” 高立, 2001. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24898 | - |
| dc.description.abstract | 在寬頻系統中，如光纖通訊、超寬頻射頻通訊及無線電天文望遠鏡，由於傳輸速度相當快、資料頻寬大，需要低成本、平坦的頻率響應及高頻之電路。此類電路已是目前的研究重點。本論文主要包括微波分散式放大器之設計及實現。
本論文的目的在於利用分散式架構設計寬頻之放大器。文中回顧了放大器的基本操作原理及基礎定律，並且討論到雜訊和輸出功率。然後再針對兩種寬頻放大器架構討論之：一種為傳統分散式放大器(CDA)，另一種為串接單級分散式放大器(CSSDA)。 本論文共提出四個電路，皆是使用已封裝之離散電晶體，製作於FR4 印刷電路板上： 第一個為2.4GHz單級放大器，這是一個基本且架構簡單的入門放大器，製作於厚度0.6mm的FR4 印刷電路板上，偏壓在VCE=3V、IC=10mA時，於2.4GHz量得增益為6.6dB，輸入及輸出反射損耗分別為31.4dB及30.1dB，隔離度為16dB。 第二個為兩級寬頻放大器，製作於厚度1.6mm的FR4 印刷電路板上，偏壓在VDS=4V、IDS=43.1mA時，於0.5~3GHz量得增益為10.1±1.4dB，輸入及輸出反射損耗分別大於9.1dB及12.4dB，隔離度大於20dB。 第三個為四級寬頻放大器，製作於厚度1.6mm的FR4 印刷電路板上，偏壓在VDS=4V、IDS=94.8mA時，於0.5~3GHz量得增益為15.1±1.6dB，輸入及輸出反射損耗分別大於10.8dB及10.5dB，隔離度大於50dB。 第四個為CSSDA寬頻放大器，製作於厚度1.6mm的FR4 印刷電路板上，偏壓在VDS=2V、IDS=10.6mA時，於0.5~6GHz量得增益為21.5±3.5dB，輸入及輸出反射損耗分別大於8.5dB及11dB，隔離度大於50dB。 | zh_TW |
| dc.description.abstract | Circuits with cost efficiency, flat frequency response and high frequency are required in wideband systems, such as optical communication, ultra-wide band (UWB) communication and the radio astronomy telescope. The designs of such circuits become important research topics recently. This dissertation includes the design methodology and implementation of microwave distributed amplifiers.
The purpose of this dissertation is using distributed configurations to design wideband amplifiers. The basic operation and fundamental principles of the amplifiers are reviewed. The noise and power performances of the amplifiers are also discussed. Then we discussed two kinds of broadband amplifier configurations. One is the conventional distributed amplifier (CDA), and the other is the cascaded single-stage distributed amplifier (CSSDA). Four circuits are proposed in this thesis. All of them are implemented using packaged discrete transistors on a FR4 PCB. The first is a 2.4GHz single-stage amplifier. This is an amplifier with the most basic and simple configuration. The amplifier is fabricated on a 0.6-mm thick FR4 PCB. When the bias is VCE=3V and IC=10mA, at 2.4GHz, the measured gain is 6.6dB, and the input return loss is 31.4dB, and the output return loss is 30.1dB, and the isolation is 16dB. The second is a two-stage wideband amplifier. It is fabricated on a 1.6-mm thick FR4 PCB. When the bias is VDS=4V and IDS=43.1mA, around the 0.5-3GHz, the measured gain is 10.1±1.4dB, and the input return loss is better than 9.1dB, and the output return loss is better than 12.4dB, and the isolation is better than 20dB. The third is a four-stage wideband amplifier. It is fabricated on a 1.6-mm thick FR4 PCB. When the bias is VDS=4V and IDS=94.8mA, in the 0.5-3GHz range, the measured gain is 15.1±1.6dB, and the input return loss is better than 10.8dB, and the output return loss is better than 10.5dB, and the isolation is better than 50dB. The fourth is a CSSDA wideband amplifier. It is fabricated on a 1.6-mm thick FR4 PCB. When the bias is VDS=2V and IDS=10.6mA, about the 0.5-6GHz range, the measured gain is 21.5±3.5dB, and the input return loss is better than 8.5dB, and the output return loss is better than 11dB, and the isolation is better than 50dB. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T05:58:02Z (GMT). No. of bitstreams: 1 ntu-96-J94921057-1.pdf: 2002340 bytes, checksum: 7000b8ba5ac8eed915da721c090dc654 (MD5) Previous issue date: 2007 | en |
| dc.description.tableofcontents | 第1章 緒論 1
1.1 研究動機 1 1.2 文獻探討 2 1.3 論文貢獻 3 1.4 論文架構 4 第2章 放大器原理 5 2.1 簡介 5 2.2 增益與穩定性(Gain and Stability) 6 2.2.1 雙埠網路功率增益 6 2.2.2 穩定性 8 2.2.3 轉移功率增益(Transducer Power Gain) 11 2.3 雜訊(Noise) 13 2.3.1 雜訊的種類 13 2.3.2 電晶體的雜訊 17 2.3.3 雜訊指數(Noise Figure) 19 2.3.4 等雜訊指數圓(Constant Noise Figure Circles) 21 2.4 線性度(Linearity) 22 2.4.1 交互調變(Intermodulation) 23 2.4.2 增益壓縮點(Gain Compression) 24 2.4.3 靈敏度(Sensitivity) 25 2.4.4 動態範圍(Dynamic Range, DR) 26 第3章 寬頻放大器 29 3.1 UWB系統 29 3.1.1 UWB的研究背景 29 3.1.2 UWB的定義 30 3.1.3 UWB的特性 30 3.2 寬頻放大器架構比較 33 3.3 分散式主動電路系統 35 3.3.1 無限長傳輸線 35 3.3.2 有限長傳輸線 38 3.4 傳統分散式放大器(Conventional Distributed Amplifier, CDA) 41 3.4.1. 影像參數法 41 3.4.2. 傳統分散式放大器的增益 44 3.5 串接單級分散式放大器(Cascaded Single-Stage Distributed Amplifier, CSSDA) 52 3.6 CDA與CSSDA的比較 54 第4章 放大器設計、製作與量測 57 4.1 簡介 57 4.2 設計流程 58 4.3 直流偏壓電路 60 4.4 TRL校準 62 4.5 2.4GHz單級放大器 71 4.5.1 簡介 71 4.5.2 元件介紹 71 4.5.3 電路設計及分析 74 4.5.4 模擬與量測結果 75 4.6 兩級寬頻放大器 78 4.6.1 簡介 78 4.6.2 元件介紹 78 4.6.3 電路設計及分析 80 4.6.4 模擬與量測結果 81 4.7 四級寬頻放大器 84 4.8 CSSDA寬頻放大器 88 4.8.1 簡介 88 4.8.2 元件介紹 88 4.8.3 電路設計及分析 90 4.8.4 模擬與量測結果 91 4.9 介面與寄生效應 94 第5章 結論 97 參考文獻 99 | |
| dc.language.iso | zh-TW | |
| dc.subject | 寬頻放大器 | zh_TW |
| dc.subject | 分散式 | zh_TW |
| dc.subject | distributed | en |
| dc.subject | broadband amplifiers | en |
| dc.title | 應用分散式架構設計之寬頻放大器 | zh_TW |
| dc.title | Design of Broadband Amplifiers Using Distributed Configurations | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 95-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 蔡政翰(Jeng-Han Tsai),林坤佑(Kun-You Lin) | |
| dc.subject.keyword | 分散式,寬頻放大器, | zh_TW |
| dc.subject.keyword | distributed,broadband amplifiers, | en |
| dc.relation.page | 102 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2007-08-30 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電機工程學研究所 | zh_TW |
| 顯示於系所單位： | 電機工程學系 | |
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