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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 吳志毅(Chih-I Wu) | |
| dc.contributor.author | Wen-Jie Wang | en |
| dc.contributor.author | 王文杰 | zh_TW |
| dc.date.accessioned | 2021-06-08T05:38:19Z | - |
| dc.date.copyright | 2011-07-29 | |
| dc.date.issued | 2011 | |
| dc.date.submitted | 2011-07-26 | |
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24720 | - |
| dc.description.abstract | 本篇論文以溶膠凝膠法研究以一無毒性製程製備P及N型氧化鋅透明導電薄膜，探討不同退火氛圍：氧氣、氮氣與真空下，對P及N型氧化鋅薄膜的特性影響。
第一部分為P型氧化鋅透明導電薄膜的製備，前驅物溶液以醋酸鋅為溶質溶解於2-丙醇溶劑中，並添加乙醇胺作為穩定劑，藉由醋酸胺、硝酸銦共摻雜的方式製備P型氧化鋅薄膜，於不同退火氛圍：氧氣、氮氣與真空中，僅在氧氣退火後的氧化鋅薄膜呈現P型的導電性，其電洞濃度、電阻率與載子遷移率分別為+1.58×10^17cm^-3、55.11Ω•cm與0.72cm^2V^-1s^-1。 第二部份為N型氧化鋅透明導電薄膜的製備，前驅物溶液同樣以醋酸鋅為溶質，2-丙醇為溶劑，搭配乙醇胺作為穩定劑，摻雜物則以硝酸銦為主。藉由探討不同的摻雜濃度 (0.75%、1.00%、2.00%、3.00%、5.00%)以及不同的退火氛圍：氧氣、氮氣與真空，對N型氧化鋅特性的影響以得出最佳的結果。實驗結果顯示，於摻雜濃度2.00%，氮氣退火後的N型氧化鋅薄膜有最佳的電性，其電子濃度、電阻率與載子遷移率分別為-1.35×10^18cm^-3、2.62Ω•cm與1.77cm^2V^-1s^-1。另一方面，當摻雜濃度2.00%的N型氧化鋅薄膜，經由第一次的氮氣退火以及第二次的真空退火後可使電性再次提升，其電子濃度、電阻率與載子遷移率分別為-2.34×10^19cm^-3、2.16×10^-2Ω•cm與12.33 cm^2V^-1s^-1。 | zh_TW |
| dc.description.abstract | We investigate nontoxic fabrication processes to derive P and N-type ZnO transparent conductive thin films by sol-gel method and discuss how anneal condition effect the characteristics of P and N-type ZnO thin films.
In the first part of the thesis, in order to fabricate P-type ZnO transparent conductive thin films, zinc acetate dehydrate was firstly dissolved in 2-propanol with ethanolamine as the stabilizer and ammonium acetate and indium(Ш) nitrate pentahydrate were used as co-doping materials. In three kinds of different anneal ambients(O2、N2 and vacuum), ZnO thin films exhibit p-type electrical properties only when they were annealed in oxygen ambient, with hole concentration of +1.58×10^17cm^-3、resistivity of 55.11Ω•cm and carrier mobility of 0.72cm^2V^-1s^-1. The second part of the thesis describes the fabrication processes for N-type ZnO transparent conductive thin films. The preparation of precursor solution is similar to P-type ZnO, except that the doping material is only indium(Ш) nitrate pentahydrate. We discuss how different doping concentration(0.75%、1.00%、2.00%、3.00%、5.00%) and anneal ambients(O2、N2 and vacuum) effect the characteristics of N-type ZnO to get the better result. The result show that the N-type ZnO thin films with electron concentration of -1.35×10^18cm^-3、resistivity of 2.62Ω•cm and carrier mobility of 1.77cm^2V^-1s^-1 at doping concentration of 2.00% in nitrogen ambient were achieved. On the other hand, the electrical properties of N-type ZnO thin films at doping concentration of 2.00% can be enhanced again with electron concentration of -2.34×10^19 cm^-3、resistivity of 2.16×10^-2Ω•cm and carrier mobility of 12.33 cm^2V^-1s^-1 after first anneal in nitrogen ambient and second anneal in vacuum ambient. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T05:38:19Z (GMT). No. of bitstreams: 1 ntu-100-R98941024-1.pdf: 2437154 bytes, checksum: 6c336e49832a99e6ecc2ae619c141161 (MD5) Previous issue date: 2011 | en |
| dc.description.tableofcontents | 中文摘要……………………………………………………I
Abstract……………………………………………………II 圖目錄………………………………………………………VI 表目錄………………………………………………………IX 第一章 緒論………………………………………………1 1.1 前言…………………………………………………1 1.2 研究目的……………………………………………2 第二章 理論與文獻回顧…………………………………3 2.1 透明導電氧化物介紹………………………………3 2.1.1 透明導電氧化物的電性質(Drude model)……4 2.1.2 晶格振動散射……………………………………5 2.1.3 晶界散射…………………………………………5 2.1.4 摻雜物散射………………………………………6 2.1.5 透明導電氧化物的光學性質……………………6 2.2 N型透明導電氧化物………………………………8 2.3 P型透明導電氧化物………………………………11 2.4 氧化鋅的特性…………………………………… 11 2.5 P型氧化鋅製備上的困難…………………………14 2.6 溶膠凝膠製備法…………………………………15 2.7 前驅物的化學反應………………………………16 2.8 塗佈方法…………………………………………17 第三章 實驗方法………………………………………19 3.1 厚度與電阻率的關聯性…………………………19 3.2 基板的準備………………………………………20 3.3 P型ZnO薄膜的製備………………………………22 3.3.1 P型ZnO前驅液的製備…………………………22 3.3.2 P型ZnO薄膜製備流程…………………………23 3.4 N型ZnO薄膜的製備………………………………25 3.4.1 N型ZnO前驅液的製備…………………………25 3.4.2 N型ZnO薄膜製備流程…………………………25 3.5 分析儀器及測量原理……………………………27 3.5.1 表面輪廓儀(Alpha-step)……………………27 3.5.2 凡得包測量(Van der pauw method)………28 3.5.3 霍爾效應(Hall effect)……………………30 3.5.4 X射線繞射儀(XRD)…………………………34 3.5.5 紫外-可見光光譜儀(UV-Vis spectrophotometer)…35 3.5.6 二次離子質譜儀(SIMS)………………………………36 3.5.7 X光光電子能譜儀(XPS)………………………………36 3.5.8 原子力顯微鏡(AFM)…………………………………37 第四章 結果與討論……………………………………39 4.1 銦-氮共摻雜的P型氧化鋅薄膜…………………39 4.1.1 P型氧化鋅薄膜熱退火前後的特性…………39 4.1.2 P型氧化鋅薄膜於不同退火氛圍的特性……41 4.2 銦摻雜的N型氧化鋅薄膜………………………53 4.2.1 N型氧化鋅薄膜熱退火前後的特性…………53 4.2.2 N型氧化鋅不同銦摻雜濃度的表現…………54 4.2.3 N型氧化鋅薄膜於不同退火氛圍的特性……57 第五章 結論與未來展望……………………………69 5.1 結論……………………………………………69 5.2 未來展望………………………………………70 參考文獻……………………………………………71 | |
| dc.language.iso | zh-TW | |
| dc.subject | 無毒性 | zh_TW |
| dc.subject | 溶膠凝膠 | zh_TW |
| dc.subject | P型氧化鋅 | zh_TW |
| dc.subject | N型氧化鋅 | zh_TW |
| dc.subject | 透明導電氧化物 | zh_TW |
| dc.subject | nontoxic | en |
| dc.subject | N-type ZnO | en |
| dc.subject | sol-gel | en |
| dc.subject | transparent conductive oxide | en |
| dc.subject | P-type ZnO | en |
| dc.title | 無毒性溶膠凝膠之P及N型氧化鋅透明導電薄膜製程研究 | zh_TW |
| dc.title | Non-toxic sol-gel processes of P- and N-type ZnO transparent conductive thin films | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 99-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 陳奕君,何志浩 | |
| dc.subject.keyword | 無毒性,溶膠凝膠,P型氧化鋅,N型氧化鋅,透明導電氧化物, | zh_TW |
| dc.subject.keyword | nontoxic,sol-gel,P-type ZnO,N-type ZnO,transparent conductive oxide, | en |
| dc.relation.page | 74 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2011-07-26 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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