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http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24411Full metadata record
| ???org.dspace.app.webui.jsptag.ItemTag.dcfield??? | Value | Language |
|---|---|---|
| dc.contributor.advisor | 劉致為 | |
| dc.contributor.author | Hung Hui Lai | en |
| dc.contributor.author | 賴宏諱 | zh_TW |
| dc.date.accessioned | 2021-06-08T05:25:01Z | - |
| dc.date.copyright | 2005-07-26 | |
| dc.date.issued | 2005 | |
| dc.date.submitted | 2005-07-22 | |
| dc.identifier.citation | [1] Steve C. Cripps, “RF Power Amplifiers for Wireless Communications” ARTECH HOUSE, 1999.
[2] Steve C. Cripps, ”Advanced Techniques in RF Power Amplifier Design” ARTECH HOUSE, 1999. [3] Behzad Razavi, ”RF Microelectronics” Prentice Hall, 1998. [4] Guillermo Gonzalez, ”Microwave Transistor Amplifiers Analysis and Design” Prentice-Hall, 1997. [5] Berkhout, M, ”An integrated 200-W class-D audio amplifier”, Solid-State Circuits, IEEE Journal of Volume 38, Issue 7, pp. 1198 – 1206, July 2003 [6] C. Yoo and Q. Huang, ”A common-gate switched 0.9W class E power amplifier with 41%PAE in 0.2um CMOS”, symp. on VLSI circuits, pp 56-57,2000 [7] T. Kuo and B lusigan, ”A 1.5W class F RF power amplifier in 0.2um CMOS technology”, ISSCC Dig. Tech papers, pp 154-155, Feb 2001 [8] IEEE 802.11 a/b/g standards [9] T. Sowlati and D. M. W. Leenaerts, “A 2.4-Ghz 0.18um CMOS Self-Biased Cascode Power Amplifier”, “IEEE JSSC, vol.38, NO.8, Aug 2003. [10] D. Heo, et al. “A High Efficiency 0.25-um CMOS PA with LTCC Multi-layer High-Q Integrated Passives for 2.4GHz ISM Band” IEEE MTT 2001 [11] YunSeong Eo and KwangDu Lee,”High Efficiency 5GHz CMOS Power Amplifier with Adaptive Bias Control Circuit”, RFIC 20004 [12] Cheng-Chi Yen, Huey-Ru Chuang , “A 0.25um 20-dBm 2.4-GHz CMOS Power AmplifierWith an Integrated Diode Linearizer” IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 13, NO. 2, FEB 2003 [13] Mani Vaidyanathan, et al. ”A theory of High-Frequency Distortion in Bipolar Transistor,” IEEE Tran. MTT vol.51 NO.2 Feb 2003. [14] Steve A. Maas, ”Nonlinear Microwave Circuits,” ARTECH HOUSE, 1998. [15] S. Narayanan and H.C. Poon, “An Analysis of distortion in bipolar transistors using integral charge control model and Volterra series,” IEEE Trans. Circuit Theory, vol.CT-20, pp. 341-351, July 1973 [16] Masaya Iwamoto, et al. ”Optimum bias conditions for linear broad-band InGaP/GaAs HBT power amplifiers”, IEEE Tran. MTT pp.2954-2962 vol.50 Dec 2002. [17] A. Raghavan, et al. “ A 2.4 GHz High Efficiency SiGe HBT Power Amplifier with High-Q LTCC Harmonic Suppression Filter, “IEEE MTT-S Digest, pp.1019-1022.2002 [18] R. P. Arnold and D. S. Zoroglu, “A quantitative study of emitter ballasting, “IEEE Trans. Electron Devices, vol.21, pp.385-391, July 1974. [19] Antonino Scuderi1,et al, ”A High Performance Silicon Bipolar Monolithic RF Linear Power Amplifier for W-LAN IEEE802.11g Applications”, 2004 RFIC [20] Winfried Bakalski, et al. “A 5.25 GHz SiGe Bipolar Power Amplifier for IEEE 802.11a Wireless LAN”,RFIC2004 [21] Tao Zhang, William R. Eisenstadt, Robert M. Fox, “A NOVEL 5GHz RF POWER DETECTOR”, ISCAS 2004 [22] Stacy Ho, ”A 45OMHz CMOS RF Power Detector”, IEEE RFIC 2001 [23] http://www.tgnsync.org/ [24] http://www.wwise.org/ [25] CIC course training manual, ”MMIC Design”, July 2003 [26] CIC course training manual, “Design of RF CMOS IC”, July 2003 [27] CIC course training manual, “RF CMOS IC Design Flow”, July 2003 | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/24411 | - |
| dc.description.abstract | 在本論文中，我們介紹了功率放大器基本設計概念與流程。此外，本論文設計與製作了數個應用於IEEE 802.11b/g無線網路通訊協定，以金氧半與矽鍺製程製作的2.4GHz的無線功率放大器。以0.25微米金氧半製程製作的功率放大器，達成了26 dB的線性增益，21.8dBm的飽和功率，18.5dBm的1dB增益壓縮點以及23%的最大功率增加效率。對於0.18微米金氧半功率放大器，經由偏壓控制電路對線性度的改善，1dB增益壓縮點增加了1.3dBm。以0.35微米矽鍺製程製作的功率放大器，達成了27.6 dB的線性增益，20.4dBm的飽和功率，20.7dBm的1dB增益壓縮點以及24%的最大功率增加效率。在符合IEEE802.11b的規格下，可達到17.8dBm的功率輸出；在符合IEEE802.11g的規格下，可達到15.2dBm的功率輸出。此外，我們也以矽鍺製程設計了一個應用於802.11n新通訊協定的雙重功率放大器。為了達成對功率放大器的最佳阻抗匹配，本論文也介紹了如何利用load pull系統將功率放大器與印刷電路板組合成為一個完整的模組。 | zh_TW |
| dc.description.abstract | In this thesis, the basic concepts of power amplifier design are described. And we design and fabricate 2.4 GHz CMOS and SiGe power amplifiers used for IEEE 802.11b/g application. For 0.25 µm CMOS technology, the amplifier achieves linear gain = 26 dB, Psat = 21.8 dBm, P1dB= 18.5 dBm and maximum PAE= 23 %. For 0.18 µm CMOS technology power amplifier, comparing to constant voltage bias, the 1dB compress point improves 1.3 dBm with bias control circuit. For 0.35 µm SiGe HBT power amplifier, it achieves linear gain= 27.6 dB, Psat= 20.4 dBm, P1dB= 20.7 dBm, maximum PAE= 24 %, and maximum output power 17.8 dBm for IEEE 802.11b, 15.2 dBm for IEEE 802.11g. Besides, we designed a dual SiGe power amplifier for IEEE 802.11n application. For optimal impedance matching for power amplifier, we introduce how to assemble the power amplifier module with PCB by load pull system. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T05:25:01Z (GMT). No. of bitstreams: 1 ntu-94-R92943123-1.pdf: 3064772 bytes, checksum: af7ccec8c186440d57fb580bb1680da9 (MD5) Previous issue date: 2005 | en |
| dc.description.tableofcontents | Chapter1 Introduction
1.1 Background---------------------------------------------------------------------------------1 1.2 Motivation-----------------------------------------------------------------------------------2 1.3 Thesis organization------------------------------------------------------------------------4 Chapter2 Analysis and Design Flow of the Power Amplifier 2.1 Introduction--------------------------------------------------------------------------------5 2.2 Classification of power amplifier-------------------------------------------------------6 2.2.1 linear power amplifier---------------------------------------------------------6 2.2.2 nonlinear power amplifier----------------------------------------------------8 2.3 Load-line theory-------------------------------------------------------------------------16 2.3.1 Introduction of load-line theory-------------------------------------------16 2.3.2 Characteristic of load-line theory-----------------------------------------19 2.4 Specification—IEEE 802.11b, 802.11g----------------------------------------------25 2.5 Design flow of power amplifier-------------------------------------------------------29 Chapter 3 2.4GHz Self-biased Cascode CMOS Power Amplifier 3.1 Introduction------------------------------------------------------------------------------30 3.2 Advantages of self-biased cascode topology----------------------------------------31 3.3 Design of 0.25um CMOS power amplifier------------------------------------------32 3.3.1 Compositions of 0.25um CMOS power amplifier----------------------32 3.3.2 Design parameters of 0.25um CMOS power amplifier---------------34 3.3.3 Measured results of 0.25um CMOS power amplifier-----------------36 3.4 Design of 0.18um power amplifier---------------------------------------------------40 3.4.1 Composition of 0.18um power amplifier---------------------------------40 3.4.2 Operation principle of bias control circuit------------------------------41 3.4.3 Simulation of 0.18um power amplifier-----------------------------------43 Chapter4 2.4 GHz SiGe Power Amplifier with Temperature Compensation and Linearity Improvement Bias Circuit 4.1 Introduction------------------------------------------------------------------------------48 4.2 Analysis of nonlinearity effect in HBT (refers to [13])---------------------------49 4.3 Design of 0.35um SiGe power amplifier---------------------------------------------54 4.3.1 HBT devices selection--------------------------------------------------------54 4.3.2 HBT bias point selection----------------------------------------------------54 4.3.3 Analysis of active bias circuit----------------------------------------------55 4.3.4 Schematic and parameters of 0.35um SiGe power amplifier--------57 4.3.5 Measured results of 0.35um SiGe power amplifier--------------------59 4.4 RF Power detector-----------------------------------------------------------------------65 4.4.1 Introduction of power detector--------------------------------------------65 4.4.2 Circuit design of power detector (I)--------------------------------------66 4.4.3 Circuit design of power detector (II)-------------------------------------69 4.5 Dual Power amplifier for IEEE 802.11n---------------------------------------------71 4.5.1 Introduction of IEEE 802.11n---------------------------------------------- 71 4.5.2 Dual power amplifier for IEEE 802.11n----------------------------------72 Chapter5 Assembly of Power Amplifier Module with PCB 5.1 Introduction------------------------------------------------------------------------------74 5.2 Load-pull system-------------------------------------------------------------------------74 5.3 Matching of power amplifier module------------------------------------------------76 Chapter6 Summary and Future Work 6.1 Summary-----------------------------------------------------------------------------------78 6.2 Future work--------------------------------------------------------------------------------79 | |
| dc.language.iso | en | |
| dc.subject | 射頻 | zh_TW |
| dc.subject | 功率放大器 | zh_TW |
| dc.subject | power amplifier | en |
| dc.subject | 2.4GHz | en |
| dc.subject | RF | en |
| dc.title | CMOS/SiGe BiCMOS製程之2.4GHz 射頻功率放大器與PCB模組製作 | zh_TW |
| dc.title | CMOS/SiGe BiCMOS 2.4GHz RF Power Amplifier on PCB Module | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 93-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 馬金溝,楊子毅,林泓均,江逸群 | |
| dc.subject.keyword | 功率放大器,射頻, | zh_TW |
| dc.subject.keyword | power amplifier,RF,2.4GHz, | en |
| dc.relation.page | 81 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2005-07-22 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| Appears in Collections: | 電子工程學研究所 | |
Files in This Item:
| File | Size | Format | |
|---|---|---|---|
| ntu-94-1.pdf Restricted Access | 2.99 MB | Adobe PDF |
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