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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 呂宗昕 | |
dc.contributor.author | Chung-Hsien Wu | en |
dc.contributor.author | 吳忠憲 | zh_TW |
dc.date.accessioned | 2021-06-08T05:10:39Z | - |
dc.date.copyright | 2011-07-25 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-07-11 | |
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23825 | - |
dc.description.abstract | 本研究利用非真空法製備Cu(In,Ga)Se2粉體與薄膜,可克服過去於真空系統下製備Cu(In,Ga)Se2薄膜太陽電池之高生產成本之問題。非真空技術操作簡單、可快速製備薄膜、薄膜之組成易於控制且符合大面積生產之需求。本論文除以水熱法製備CuInSe2粉體與薄膜外,亦利用改良式塗佈法製備Cu(In,Ga)Se2薄膜,深入探討不同製備條件對於元件效率之影響。
論文第一部份使用水熱法製備CuInSe2粉體,克服過去傳統需使用溶熱法長時間製備CuInSe2粉體的缺點,成功以水做為溶劑於180oC短時間製備CuInSe2粉體。當水熱溫度提高時,可以有效去除粉體中的In(OH)3雜相,而獲得結晶性良好之單相CuInSe2粉體,水熱法製備之粉體亦利用於粉體塗佈上,藉由助熔劑的添加可以製備較為緻密的薄膜。另可直接沈積CuInSe2薄膜於軟性鈦基板上,有效降低過去粉體塗佈時所需之溫度,可避免基材與薄膜之間發生其他反應。當增加水熱反應溫度時,薄膜結晶性上升同時薄膜中之晶粒大小亦隨之成長。 本論文第二部份改以改良式溶液法製備Cu(In,Ga)Se2薄膜,利用本方法可成功製備緻密之Cu(In,Ga)Se2薄膜,且薄膜中鎵離子分佈均勻,避免元件開路電壓下降的問題。隨著薄膜中銅離子對IIIA族離子的比例增加,薄膜之晶粒大小亦隨之增加,當薄膜中銅離子過多時會形成硒化銅,而硒化銅的形成會導致元件效率的下降。研究中亦發現當硒化溫度提高時,薄膜晶粒大小會隨之增大。 第三部份探討鎵含量與鎵離子的分佈對於元件特性的影響。不同鎵含量與鎵離子梯度之薄膜均以改良式塗佈法製備,Cu(In,Ga)Se2之晶格常數隨著鎵離子的添加量增加而減少。藉由鎵離子梯度的調整,可以改變元件之效率,當Cu(In,Ga)Se2薄膜擁有雙鎵離子梯度時,元件效率提升。 本研究最後一部份以改良式溶液法製備含鈉之Cu(In,Ga)Se2薄膜於無鈉玻璃上,鈉離子之添加可以提升Cu(In,Ga)Se2薄膜之結晶性與薄膜粒徑大小,而薄膜之載子濃度亦大幅提昇,元件效率亦可有效提升。本研究並結合改良式塗佈法與濺鍍法來製備含鈉之Cu(In,Ga)Se2薄膜,藉由調整改良式塗佈法成分來控制Cu(In,Ga)Se2薄膜中鈉離子之擴散量。 本研究成功以兩種非真空法製備CuInSe2系列之粉體與薄膜,對所製備之粉體與薄膜進行結構與特性分析,藉由調整薄膜中之組成、硒化條件、鎵離子梯度與鈉離子之添加量,元件效率可有效提升。並建立可應用於無鈉基材上製備含鈉Cu(In,Ga)Se2薄膜之技術。 | zh_TW |
dc.description.abstract | To overcome the shortcomings of the vacuum process for preparing Cu(In,Ga)Se2 films, including the requirement for high-cost equipment, a low production rate and high complexity, alternative low-cost and simple methods must be developed. In this investigation, two non-vacuum processes which were the hydrothermal process and the modified spin coating method were utilized to prepare Cu(In,Ga)Se2 powders and films. The effects of preparation conditions on the efficiency of Cu(In,Ga)Se2 solar cells are thoroughly investigated.
In first part of this thesis, CuInSe2 powders and films were successfully prepared via a hydrothermal method. Well-crystallized CuInSe2 particles were obtained after heating at 180oC for 1 h at low temperatures. When the hydrothermal temperature was increased, the crystallinity and particle size both increased. In the second part of the thesis, a modified spin coating method followed by a subsequent selenization process was developed to prepare Cu(In,Ga)Se2 films. Densified Cu(In,Ga)Se2 films with homogeneously distributed gallium ions were successfully prepared. The grain sizes of the prepared films increased with the increase of the molar ratio of copper ions to IIIA ions. As the selenization temperature increased, the crystallinity and the grain size of the prepared films both increased. The third part of this thesis the effects of the gallium-ion content and the band-gap grading on the microstructure and the electrical properties of Cu(In,Ga)Se2 films . The efficiency of the solar cells was increased as Cu(In,Ga)Se2 was prepared with double grading of gallium-ion contents. In the fourth part of this thesis, Cu(In,Ga)Se2 films with various contents of sodium ions were coated onto a sodium-free substrate. The efficiency of the solar cell was significantly increased when sodium ions were added. In this thesis, Cu(In,Ga)Se2 film were prepared using two non-vacuum methods which were the hydrothermal method and the modified spin coating method. CuInSe2 powders were prepared at low temperature in a short time. Densified Cu(In,Ga)Se2 films were fabricated via the modified spin coating method followed by selenization. Carefully controlling the preparation conditions increased the efficiency of solar cells. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T05:10:39Z (GMT). No. of bitstreams: 1 ntu-100-F94524089-1.pdf: 19207012 bytes, checksum: 3b8f254aed19381d66dad6391a4f2b93 (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | 摘要.......................................................I
Abstract.................................................III List of Figures...........................................IX List of Tables..........................................XIII Chapter 1 Introduction and background 1 1.1 Preface................................................1 1.2 Photovoltaic technology ...............................3 1.2.1 Evolution of solar cell..............................3 1.2.2 Solar cell device physics............................5 1.2.2.1 Semiconductor......................................6 1.2.2.2 p-n junction.......................................7 1.2.2.3 Theory of operation of solar cells.................9 1.2.2.4 Current-voltage characteristics...................11 1.2.2.5 Effect of series and shunt resistances............13 1.2.3 Thin-film solar cell................................14 1.3 CuInSe2-based solar cells.............................19 1.3.1 Material properties.................................19 1.3.2 Defects in CuInSe2-based materials..................22 1.3.3 Principle of operation for Cu(In,Ga)Se2 solar cells.23 1.3.4 Structure of CuInSe2-based solar cells..............25 1.3.5 Band gap grading....................................28 1.3.6 Sodium effect.......................................30 1.4 Technology for the preparation of absorber layers.....30 1.4.1 Multisource evaporation.............................31 1.4.2 Sequential process..................................32 1.4.3 Non-vacuum process..................................34 1.5 Hydrothermal method...................................36 1.6 Solution coating method...............................37 1.7 Sputtering method.....................................38 1.8 Research objective....................................39 Chapter 2 Experimental 60 2.1 Preparation of the absorber materials.................60 2.1.1 Synthesis of CuInSe2 powders via the hydrothermal method....................................................60 2.1.2 Synthesis of CuInSe2 films via the hydrothermally-assisted chemical bath deposition process.................61 2.1.3 Preparation of Cu(In,Ga)Se2 films via the modified spin coating process......................................61 2.1.4 Preparation of Cu(In,Ga)Se2 films via the combination of the sputtering process and the spin coating method.....63 2.2 Measurement procedures................................64 2.3 Cell fabrication and characterization.................65 Chapter 3 Preparation and characterization of CuInSe2 powders and films via the hydrothermal route for thin-film solar cells 69 3.1. Introduction.........................................69 3.2. Results and discussion ..............................71 3.2.1 Effects of the reaction conditions on the microstructures of CuInSe2 powders in hydrothermal process...................................................71 3.2.2 Formation mechanism of CuInSe2 powders in hydrothermal process......................................75 3.2.3 Preparation of CuInSe2 films........................76 3.2.4 Effects of hydrothermal temperature on the formation of CuInSe2 films..........................................78 3.2.5 Effects of the hydrothermal duration on the formation of CuInSe2 films..........................................80 3.2.6 Electrical properties of CuInSe2 films..............83 3.3. Conclusions..........................................84 Chapter 4 Preparation and characterization of Cu(In,Ga)Se2 films via the modified spin coating method 102 4.1 Introduction.........................................102 4.2 Results and discussion...............................103 4.2.1 Effects of the molar ratio of copper ions to IIIA ions on the formation of Cu(In,Ga)Se2 films..............103 4.2.2 Effects of the selenization temperatures on the microstructures of Cu(In,Ga)Se2 films....................106 4.2.3 Electrical properties of Cu(In,Ga)Se2 films........108 4.3 Conclusions..........................................110 Chapter 5 Effects of gallium contents on the structure and electrical properties of Cu(In,Ga)Se2 films prepared via the modified spin coating method 123 5.1 Introduction.........................................123 5.2 Results and discussion...............................124 5.2.1 Effects of the gallium-ion content on the formation of Cu(In,Ga)Se2 films....................................124 5.2.2 Effects of the gallium-ion content on the microstructures and the optical properties of Cu(In,Ga)Se2 films....................................................126 5.2.3 Effects of gallium-ion grading on the properties of Cu(In,Ga)Se2 films.........................................127 5.3 Conclusions..........................................130 Chapter 6 Influence of the incorporation of sodium ions on the structural and electrical properties of Cu(In,Ga)Se2 films 141 6.1 Introduction.........................................141 6.2 Results and discussion...............................142 6.2.1 Effects of the amounts of sodium ions on the formation of the films prepared via the spin coating method...................................................143 6.2.2 Effects of the sodium contents on the microstructures of Cu(In,Ga)Se2 films prepared via the spin coating......143 6.2.3 Electrical properties of Cu(In,Ga)Se2 films prepared via the spin coating method..............................144 6.2.4 Effects of the selenization temperature on the microstructures of Cu(In,Ga)Se2 films prepared via the sputtering method........................................147 6.2.5 Formation process and electrical properties of Cu(In,Ga)Se2 films prepared via the sputtering method......150 6.2.4 Microstructures of Cu(In,Ga)Se2 films prepared via the combination of the spin coating method and the sputtering process.......................................151 6.2.4 Effects of sodium contents in Cu(In,Ga)Se2 films prepared via the combination of spin coating method and sputtering process.......................................153 6.3 Conclusions..........................................154 Chapter 7 Conclusions....................................172 References...............................................177 | |
dc.language.iso | en | |
dc.title | 硒化銅銦鎵薄膜太陽電池之光吸收層粉體與薄膜製備及特性分析 | zh_TW |
dc.title | Preparation and Characterization of Copper Indium Gallium Diselenide Powders and Films Used in the Absorber Layer of Thin-Film Solar Cells | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-2 | |
dc.description.degree | 博士 | |
dc.contributor.oralexamcommittee | 萬本儒,吳紀聖,林麗瓊,陳啟東 | |
dc.subject.keyword | 薄膜太陽電池,硒化銅銦鎵, | zh_TW |
dc.subject.keyword | Thin-film solar cell,Copper indium gallium selenide, | en |
dc.relation.page | 192 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2011-07-11 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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