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DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 呂宗昕(Chung-Hsin Lu) | |
dc.contributor.author | Hao-Yu Cheng | en |
dc.contributor.author | 鄭皓宇 | zh_TW |
dc.date.accessioned | 2021-06-08T05:10:37Z | - |
dc.date.copyright | 2011-07-25 | |
dc.date.issued | 2011 | |
dc.date.submitted | 2011-07-11 | |
dc.identifier.citation | 參考文獻
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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23823 | - |
dc.description.abstract | 本研究第一部份結合化學浴沉積法和硒蒸氣之退火處理,成功合成Cd(S,Se)薄膜。藉由XRD與EDS分析,探討不同硒化溫度與持溫時間對Se摻雜量的影響,並使用SEM與AFM分析來觀察其薄膜表面型態的變化,以及使用UV-visible探討Se摻雜量變化對能隙值的影響。本研究中經由硒化條件的改變可調整Se摻雜比例。所製備之薄膜以Hall effect量測皆為n-type之導電型態,且具有高載子濃度與低電阻率之特性。
本研究第二部分使用無氨化學浴沉積法。經由調整前驅物濃度、水浴溫度與前驅物比例,可製備平整緻密且具高透光性之CdS薄膜。研究中發現前驅物比例對表面顆粒大小和光學特性有明顯的影響。以無氨CBD法製備之CdS薄膜可應用於CIGS緩衝層製程,可避免傳統CBD法所留下的高濃度氨水廢液,在工業化量產時減少對人體以及環境的傷害。 | zh_TW |
dc.description.abstract | Cd(S,Se) thin films were successfully synthesized on the glass substrates via the CBD method followed by a selenization process. The contents of selenium ions in Cd(S,Se) films were increased with increasing reaction temperatures and duration. The adjustable band gap values of Cd(S,Se) films were controlled with the selenium-ion contents. All the synthesized films exhibited the n-type characteristics via Hall effect measurement. The carrier concentration and the conductivity were significantly promoted with the selenization process.
CdS thin films were successfully synthesized on the glass substrates via the CBD route without using ammonia. The obtained films were demonstrated to exhibit a high transmittance via UV-Vis analysis. The particle sizes on the surface of the prepared films were dominated by the condition of deposition process. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T05:10:37Z (GMT). No. of bitstreams: 1 ntu-100-R98524068-1.pdf: 4098661 bytes, checksum: e9eb1152ded3699a0cacf8f8f6b88c43 (MD5) Previous issue date: 2011 | en |
dc.description.tableofcontents | 目錄
摘要………………………………………………………………….…………I Abstract………………………………………………………………………...II 目錄…………………………………………………………………………...III 圖目錄………………………………………………………………………...VI 表目錄………………………………………………………………………...IX 第一章 序論.......................................................................................................1 1.1 前言.......................................................................................................1 1.2 太陽電池介紹.......................................................................................2 1.2.1太陽能電池的歷史與發展..........................................................2 1.2.2 太陽能電池種類.........................................................................3 1.2.3 薄膜太陽能電池.........................................................................4 1.3 銅銦鎵硒太陽電池...............................................................................5 1.3.1 銅銦鎵硒太陽電池物理特性.....................................................5 1.3.2 銅銦鎵硒太陽電池結構.............................................................5 1.4 緩衝層...................................................................................................6 1.4.1 緩衝層材料與製程.....................................................................6 1.4.2 硫化鎘緩衝層特性.....................................................................7 1.5化學浴沉積法........................................................................................8 1.5.1 化學浴沉積法介紹.....................................................................8 1.5.2 反應機制.....................................................................................9 1.5.3 反應溶液參數影響.....................................................................9 1.5.4製程優勢與所面臨問題............................................................10 1.6 硫化鎘緩衝層的後退火處理.............................................................11 1.6.1 後退火對薄膜特性的影響.......................................................11 1.6.2 緩衝層之後退火對元件效率的影響.......................................11 1.7 研究動機.............................................................................................12 第二章 硒摻雜硫化鎘薄膜之製備與特性分析.............................................18 2.1 實驗方法.............................................................................................18 2.1.1 以化學浴沉積法製備硫化鎘薄膜...........................................18 2.1.2 以硒化法製備硒摻雜之硫化鎘薄膜.......................................19 2.1.3 硒硫化鎘薄膜之特性分析.......................................................20 2.2 結果與討論.........................................................................................20 2.2.1 硒化溫度對硒摻雜比例之影響與薄膜特性分析...................20 2.2.2 硒化時間對硒摻雜比例之影響與薄膜特性分析...................25 第三章 以無氨化學浴沉積法製備硫化鎘薄膜與其特性分析.....................44 3.1 實驗方法.............................................................................................45 3.1.1 以無氨化學浴沉積製備硫化鎘薄膜.......................................44 3.1.2 硫化鎘薄膜特性分析...............................................................45 3.2 結果與討論.........................................................................................45 3.2.1 不同起始濃度下之薄膜特性分析與探討...............................45 3.2.2不同沉積溫度下之薄膜特性分析與探討................................46 3.2.3不同硫鎘比例下之薄膜特性分析與探討................................47 第四章 結論.....................................................................................................58 參考文獻...........................................................................................................61 | |
dc.language.iso | zh-TW | |
dc.title | 硫硒化鎘與硫化鎘薄膜之製備與特性分析 | zh_TW |
dc.title | Preparation and Characterization of Cadmium Sulfoselenide and Cadmium Sulfide Thin Films | en |
dc.type | Thesis | |
dc.date.schoolyear | 99-2 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 萬本儒(Ben-Zu Wan),徐振哲(Cheng-Che Hsu) | |
dc.subject.keyword | 硫化鎘,硒化鎘,緩衝層,薄膜製備, | zh_TW |
dc.subject.keyword | CdS,CdSe,Buffer layer,Thin film, | en |
dc.relation.page | 66 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2011-07-11 | |
dc.contributor.author-college | 工學院 | zh_TW |
dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
顯示於系所單位: | 化學工程學系 |
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