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  1. NTU Theses and Dissertations Repository
  2. 電機資訊學院
  3. 電子工程學研究所
請用此 Handle URI 來引用此文件: http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23436
完整後設資料紀錄
DC 欄位值語言
dc.contributor.advisor郭宇軒
dc.contributor.authorHao-Chan Huangen
dc.contributor.author黃浩展zh_TW
dc.date.accessioned2021-06-08T05:01:37Z-
dc.date.copyright2010-10-22
dc.date.issued2010
dc.date.submitted2010-10-18
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[52] F. van Laere, G. Roelkens, J. Schrauwen, D. Taillaert, P. Dumon, W. Bogaerts, D. van Thourhout, and R. Baets, 'Compact grating couplers between optical fibers and Silicon-on-Insulator photonic wire waveguides with 69% coupling efficiency,' in the 2006 National Fiber Optic Engineers Conference., pp. 1-3., Mar. 2006.
dc.identifier.urihttp://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23436-
dc.description.abstract近年來由於網路的普及,應用於光電轉換的元件也因此蓬勃發展。為使光電轉換元件積體化,光波導相關元件於是被廣泛使用。絕緣層上覆矽之中的矽與二氧化矽有很大的折射率差距,且其製程和現有的半導體製程相符,為一合適的光波導材料。而光纖與絕緣層上覆矽為基材之光波導間的尺寸差距使得耦合效率欠佳,故本論文提出一個不需要破壞性測試的垂直式光耦器-光柵耦合器以解決以上問題。
  
本論文首先就幾項影響因素討論光柵耦合器的設計,設計出操作於C-波段下的光柵耦合器。藉著模擬軟體FullWAVE,檢視在C-波段之下,由先前分析所設計之光柵耦合器在其擁有製程缺陷以及量測條件誤差下的表現。光柵結構可以在標準的半導體製程下配合電子束微影製作出來。且在電子顯微鏡以及原子力顯微鏡的檢視之下,其實際結構與設計參數相仿,因此驗證可以至出高度周期性結構。本研究展現模擬與製造皆有良好結果,固未來此光柵結構可用於實現緊密之光耦合。
zh_TW
dc.description.abstractIn recent years, the technology of the optoelectronic devices grows as the network is widely spread. The guided-optic device is developed for a compact optoelectronic integrated circuit. The SOI wafer is a promising material for guided optics due to the high refractive index mismatch between Si and SiO2 and the compatibility with CMOS fabrication. The huge mode difference between the fiber and the guided device limits the coupling efficiency, thus the grating coupler that needs no destructive testing is studied in this thesis to solve these problems.
The design of the grating coupler is investigated by various factors. The robust finite-difference time-domain (FDTD) software is used to simulate the grating coupler in this thesis. For the targeted C-band applications, the designed grating coupler is examined by the fabrication errors and the coupling errors under the simulations of FullWAVE. The grating structure is made by the standard CMOS fabrication with e-beam lithography, and detailed structure characterizations using SEM and AFM are performed, indicating highly-periodic structures can be fabricated. This study shows promising results in the simulation and fabrication of grating couplers for compact coupling in the future.
en
dc.description.provenanceMade available in DSpace on 2021-06-08T05:01:37Z (GMT). No. of bitstreams: 1
ntu-99-R97943049-1.pdf: 4164547 bytes, checksum: ddd4a6407dc0c2bebcf81089461b09bd (MD5)
Previous issue date: 2010
en
dc.description.tableofcontentsAbstract (Chinese) II
Abstract (English) III
Chapter 1: Introdution 1
1.1 Motivation 1
1.2 Optical Waveguide 1
1.3 Silicon-on-Insulator 3
1.4 Fiber-to-Waveguide Coupling 5
1.5 Organization of the Thesis 7
Chapter 2: Design and Anlaysis of Grating Coupler 8
2.1 Principle and Literature Review of Grating Coupler 8
2.1.1 Period Analysis 10
2.1.2 Filling Factor Analysis 12
2.1.3 Height Analysis 13
2.2 FullWAVE Simulation 14
2.2.1 Fabrication Error Analysis 17
2.2.2 Coupling Error Analysis 22
Chapter 3: Fabrication of Grating Coupler 24
3.1 Fabrication Procedure 24
3.1.1 Electron Beam Lithography 28
3.1.2 Reactive Ion Etching 31
3.2 Characterizations 33
3.2.1 SEM 34
3.2.2 AFM 36
Chapter 4: Conclusions 40
4.1 Summary 40
4.2 Future Work 42
References 43
dc.language.isoen
dc.subject電子束微影zh_TW
dc.subject光波導zh_TW
dc.subject絕緣層上覆矽zh_TW
dc.subject光柵耦合器zh_TW
dc.subject光柵zh_TW
dc.subject時域差分法zh_TW
dc.subjectfinite-difference time-domain methoden
dc.subjectE-beam lithographyen
dc.subjectWaveguideen
dc.subjectSilicon on Insulatoren
dc.subjectGrating coupleren
dc.subjectGratingen
dc.title絕緣層上覆矽之奈米光柵結構:設計與製作zh_TW
dc.titleSilicon on Insulator Based Nano Grating Structure:Design and Fabricationen
dc.typeThesis
dc.date.schoolyear99-1
dc.description.degree碩士
dc.contributor.oralexamcommittee李佳翰,盧奕璋
dc.subject.keyword光柵,光柵耦合器,絕緣層上覆矽,光波導,電子束微影,時域差分法,zh_TW
dc.subject.keywordGrating,Grating coupler,Silicon on Insulator,Waveguide,E-beam lithography,finite-difference time-domain method,en
dc.relation.page52
dc.rights.note未授權
dc.date.accepted2010-10-19
dc.contributor.author-college電機資訊學院zh_TW
dc.contributor.author-dept電子工程學研究所zh_TW
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