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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 林恭如 | |
| dc.contributor.author | Fan-Shuen Meng | en |
| dc.contributor.author | 孟繁舜 | zh_TW |
| dc.date.accessioned | 2021-06-08T04:44:12Z | - |
| dc.date.copyright | 2009-08-11 | |
| dc.date.issued | 2009 | |
| dc.date.submitted | 2009-08-03 | |
| dc.identifier.citation | Chapter 1
[1.1] Tang, Y. B., Chen, Z. H., Song, H. S., Lee, C. S., Cong, H. T., Cheng, H. M., Zhang, W. J., Bello, I. & Lee, S. T. Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells. Nano Lett. 8, 4191-4195 (2008). [1.2] Wong, M. H., Berenov, A., Qi, X., Kappers, M. J., Barber, Z. H., Illy, B., Lockman, Z., Ryan, M. P. & MacManus-Driscoll, J. L. Electrochemical growth of ZnO nano-rods on polycrystalline Zn foil. Nanotechnology 14, 968-973 (2003). [1.3] Zhou, Q., Liu, X. Y., Zhao, Y. M., Jia, N. Q., Liu, L., Yan, M. M. & Jiang, Z. Y. Single crystal tin nano-rod arrays electrodeposited by a soft template. Chem. Commun. 39, 4941-4942 (2005). [1.4] Chiu, W. Y., Huang, T. W., Wu, Y. H., Chan, Y. J., Hou, C. H., Chien, H. T. & Chen, C. C. A photonic crystal ring resonator formed by SOI nano-rods. Opt. Express 15, 15500-15506 (2007). [1.5] Huang, H. J., Yu, C. P., Chang, H. C., Chiu, K. P., Chen, H. M., Liu, R. S. & Tsai, D. P. 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Express 16, 2933-2941 (2008). [3.6] Hsu, C. H., Lo, H. C., Chen, C. F., Wu, C. T., Hwang, J. S., Das, D., Tsai, J., Chen, L. C. & Chen, K. H. Generally applicable aelf-masked dry etching technique for nanotip array fabrication. Nano Lett. 4, 471-475 (2004). [3.7] Pai, Y. H., Meng, F. S., Lin, C. J., Kuo, H. C., Hsu, S. H., Chang, Y. C. & Lin, G. -R. Aspect-ratio-dependent ultra-low reflection and luminescence of dry-etched Si nanopillars on Si substrate. Nanotech. 20, 035303 (2009). [3.8] Lin, G. -R., Chang, Y. C., Liu, E. S., Kuo, H. C. & Lin, H. S. Low refractive index Si nanopillars on Si substrate. Appl. Phys. Lett. 90, 181923 (2007). [3.9] Lowdermilk, W. H. & Milam, D. Graded-index antireflection surfaces for high-power laser applications. Appl. Phys. Lett. 36, 891-893 (1980). [3.10] Agnello, S. & Boizot, B. Transient visible-UV absorption in beta irradiated silica. J. Non-cryst. Solids. 322, 84-89 (2003). [3.11] Skuja, L. 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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23145 | - |
| dc.description.abstract | 在本論文中，錐狀和柱狀兩種不同型態之次波長半導體抗反射結構皆被證實具有超強的抗反射能力。在奈米錐狀結構相較於奈米柱狀結構在400-500 奈米波段展現了大約3%的超低反射率，此一結果與具有梯度漸變折射率之多層膜理論模型得出的結果相當一致。另一方陎，奈米柱狀結構在量測極限1700 nm之前，相對於奈米錐狀結構隨波長增加，反射率會趨近塊材之結果，依然保持著極低的反射率。更進一步，一系列具有不同尺寸之錐狀次波長半導體抗反射結構亦成功製備完成及加以研究。隨著奈米錐的高度增加至240 奈米，原先於TM模態入射下之角反射光譜的布魯斯特角現象會因極化率降低至52.9%而消失。此外，在具有梯度漸變折射率之多層膜理論模型取層數趨近於無窮的近似條件下，理論模擬的結果能與150奈米和210奈米厚之次波長半導體抗反射結構所展現之全波段反射光譜相吻合。雖然次波長半導體抗反射結構能有效壓制各波段之反射率，但實際將其製備於太陽能電池之半成品後所量測之I-V電性，並未隨抗反射能力的提升而優化，故我們直接將次波長半導體抗反射結構製備於石英基板上進行光學反射和穿透光譜分析，進而發現次波長半導體抗反射結構雖能有效降低表陎反射，但同時降低了穿透光的強度，導致太陽能光電轉換效率無法提升。 | zh_TW |
| dc.description.abstract | In this thesis, morphologically controlled Si nano-pillars/nano-rods based sub-wavelength semiconductor anti-reflective structure (SSAS) surface exhibits great anti-reflection (AR) ability are demonstrated. Extremely small reflectance dip of <3% at 400-500 nm for Si nano-pillars is extraordinary when comparing with Si nano-rods, in which the reflectance vs. L/lambda for Si nano-pillars coincides well with the graded-index multilayer based modeling spectrum. On the other hand, Si nano-rods preserve its flattened reflectance spectrum up to 1700 nm, whereas the Si nano-pillar surface reflectance monotonically increases to approach that of bulk Si. Furthermore, the SSAS surface with different geometrical factors are successfully fabricated and investigated. As the increasing the Si nano-pillar height to 240 nm, the Brewster angles phenomenon observed for the TM-mode reflectance completely diminishes due to the decreasing of polarization ratio to 52.9%. Besides, the simulation curves by employing graded refractive index model with infinite layers are in good agreement with the measured reflectance data of 150nm-thick and 210nm-thick SSAS surface. Although SSAS efficiently suppress the reflectance over a wide spectral bandwidth, the SSAS surface based solar cells with SSAS surface fabricated upon semi-manufactured cells directly still exhibit poor I-V characteristics with the improvement of AR ability. Then we fabricate SSAS surface directly upon quartz substrate to analyze the optical reflectance and transmittance. The reason that SSAS surface suppresses surface reflectance from 30% to 5% but the transmittance decreases from 15% to 3% simultaneously results in the energy conversion efficiency is still unimprovement. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T04:44:12Z (GMT). No. of bitstreams: 1 ntu-98-R96941016-1.pdf: 2050800 bytes, checksum: 9da0d2d70bdab6089243bb9f1841a488 (MD5) Previous issue date: 2009 | en |
| dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 iv ABSTRACT v CONTENTS vi LIST OF FIGURES ix LIST OF TABLES xi Chapter 1 Introduction 1 1.1 Introduction 1 1.2 Motivation 2 1.3 Organization of the Thesis 3 1.4 Reference 3 Chapter 2 Observation of Si Nano-pillar Height Dependent Near-Infrared Anti-reflection, Depolarization and Brewster Angle Shift 8 2.1 Introduction 8 2.2 Experiments 9 2.2.1 Fabrication of Nano-roughened Pillar Based SSAS Surface 9 2.3 Results and Discussions 10 2.3.1 The SEM Analysis of Si Nano-pillar Based SSAS Surface 10 2.3.2 Introduction of the Teoretical Multi-layered Model with Graded Refractive Index 11 2.3.3 Simulation Results of Nano-pillar Based SSAS Surface by Employing a Multi–layered Model with Graded Refractive Index 12 2.3.4 Analysis of Angular Dependent Reflectance Spectrum for Nano-pillar Based SSAS Surface 13 2.3.5 Depolarization Phenomenon of Nano-pillar Based SSAS Surface 15 2.3.6 Analysis of Wavelength Dependent Reflectance for Nano-pillar Based SSAS Surface 17 2.4 Summary 18 2.5 Reference 21 Chapter 3 Manipulative Depolarization and Reflectance Spectra of Morphologically Controlled Nano-Pillars and Nano-Rods 30 3.1 Introduction 30 3.2 Experiments 31 3.2.1 Ni Nano-dot Mask Assistant Dry Etching Process 31 3.2.2 Chemical Reaction Wet Etching Process 32 3.3 Results and Discussions 33 3.3.1 The SEM and TEM Analysis of Si Nano-pillars and Nano-rods 33 3.3.2 Analysis of Wavelength Dependent Reflectance Spectra 34 3.3.3 Theoretical Elucidation for Morphology Dependent Reflectance Spectra of Si Nano-pillars and Nano-rods Roughened Surfaces 35 3.3.4 Analysis of Depolarization Phenomena of Si Nano-pillars and Nano-rods Roughened Surfaces 37 3.4 Summary 39 3.5 Reference 41 Chapter 4 I-V Characteristics of SSAS Surface Based Solar Cells and Optical Properties of SSAS Surface 48 4.1 Introduction 48 4.2 Experiments 50 4.2.1 Fabrication of SSAS Surface Based Solar Cells 50 4.2.2 Preparation of Passivation Layers with Ultra-thin Teflon-like Films 51 4.2.3 Fabrication of SSAS Surface upon Quartz Substrate 51 4.3 Results and Discussions 51 4.3.1 I-V Characteristics of SSAS Surface Based Solar Cells 51 4.3.2 I-V Characteristics of SSAS surface Based Solar Cells with Ultra-thin Teflon-like Films as Passivation Layers 52 4.3.3 Optical Transmittance and Reflectance of SSAS Surface upon Quartz Substrate 53 4.4 Summary 54 4.5 Reference 55 Chapter 5 Conclusion 64 REFERENCE 67 作者簡介 77 Publication List 78 | |
| dc.language.iso | en | |
| dc.subject | 錐狀奈米柱 | zh_TW |
| dc.subject | 抗反射 | zh_TW |
| dc.subject | 柱狀奈米柱 | zh_TW |
| dc.subject | 去極化 | zh_TW |
| dc.subject | 形態調控 | zh_TW |
| dc.subject | 梯度漸變折射係數 | zh_TW |
| dc.subject | Graded Refractive Index | en |
| dc.subject | Depolarization | en |
| dc.subject | Anti-reflection | en |
| dc.subject | Morphological Control | en |
| dc.subject | Nano-pillar | en |
| dc.subject | Nano-rod | en |
| dc.title | 矽晶圓表面奈米糙化結構去極化角反射譜特性研究 | zh_TW |
| dc.title | The Depolarization and Angular Spectral Properties of Nano-Roughened Structures on Si Wafer | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 97-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 何志浩,葉哲良,張宏鈞 | |
| dc.subject.keyword | 柱狀奈米柱,錐狀奈米柱,形態調控,抗反射,去極化,梯度漸變折射係數, | zh_TW |
| dc.subject.keyword | Nano-rod,Nano-pillar,Morphological Control,Anti-reflection,Depolarization,Graded Refractive Index, | en |
| dc.relation.page | 78 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2009-08-04 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
| 顯示於系所單位： | 光電工程學研究所 | |
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