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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 藍崇文(Chung-Wen Lan) | |
| dc.contributor.author | Kuan-Ming Yeh | en |
| dc.contributor.author | 葉冠銘 | zh_TW |
| dc.date.accessioned | 2021-06-08T04:40:03Z | - |
| dc.date.copyright | 2009-08-21 | |
| dc.date.issued | 2009 | |
| dc.date.submitted | 2009-08-13 | |
| dc.identifier.citation | Aoyama T. and K. Kuribayashi, “Novel criterion for splitting of plate-like crystal growing in undercooled silicon melts”, Acta Materialia 51 (2003), pp. 2297-2303 .
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Valerie R., “Special boundaries and grain boundary plane engineering ”, Scripta Materialia 54 (2006), pp. 1011-1015. Wang H., N. Usami, K. Fujiwara, K. Kutsukake, and K. Nakajima, “Microstructures of Si multicrystals and their impact on minority carrier diffusion length”, Acta Materialia 57 (2009), pp. 3268-3276. Wang T. Y., S.L. Hsu, C.C. Fei, K.M. Yei, W.C. Hsu, and C.W. Lan, “Grain control using spot cooling in multi-crystalline silicon crystal growth”, Journal of Crystal Growth 311 (2009), pp. 263-267. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/23062 | - |
| dc.description.abstract | 本論文中將提供一個簡易的長晶機制來控制晶粒生長與改善生長界面，以得到高品質的太陽能多晶矽。吾人使用active spot cooling的技術在坩堝底部控制晶粒誘導生長，並且配合熱場的側保溫使得生長界面呈現微凸狀，讓晶粒可以隨著生長高度逐漸放大。Active spot cooling是由一個導熱極佳的石墨棒，兩端接在坩堝與冷卻載台之間所組成，其冷卻載台有冷卻循環水流通且可以調控流量，進而控制冷卻速率。多晶矽晶粒因不同的冷卻速率而有不同的生長晶癖，藉由active spot cooling調控吾人能夠誘導生長Σ3孿生晶界。Σ3晶界是屬於一種電鈍性晶界，當光電轉換所展生的電子與電洞不易在此處產生再結合的效果，因而可以提高電池的轉換效率。另外，此裝置還可以變化冷卻速率，除了初始的快速冷卻生長，還可以後段降低冷卻速率減少缺陷與新的成核點產生。在生長機制的改良下，晶粒大小、缺陷密度分佈，還有少數載子壽命都能獲得改善。相較於沒有受控制的晶體，藉由冷卻控制可以得到較高比例的Σ3晶界，在太陽能電池應用可以獲得明顯的光電轉換效率提升。 | zh_TW |
| dc.description.abstract | We report simple ideas to control the grain orientation and solidification front to get high quality multi-crystalline silicon for solar cells. The method employed an active cooling spot to induce initial dendrite growth, and the solidification front was controlled to be slightly convex through crucible insulation. This active spot cooling employs a graphite rod at the bottom of crucible which served as an active cooling spot. According to silicon grain growth behavior, the undercooling caused by cooling spot at the initial crystal growth can induce grains with Σ3 grain boundary. The Σ3 grain boundary is electrically inactive so that it does not act as recombination center for solar cell. In addition, the cooling spot can control cooling rate to reduce new nucleation formation at the grain boundary during crystal growth. That is, it helps induced dendrite growth from the bottom to the whole crystal. As compared with non-controlled crystal, it was found that there were more twins and slip bands in controlled one. These areas often had high lifetime and low EPD density. Furthermore, grain size and lifetime of controlled crystal also enhance along the growth direction. As the results, the solar cell conversion efficiency is significantly improved. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T04:40:03Z (GMT). No. of bitstreams: 1 ntu-98-R96524015-1.pdf: 5011662 bytes, checksum: 828acee3f20e0479cbca5769c0fc127e (MD5) Previous issue date: 2009 | en |
| dc.description.tableofcontents | 中文摘要 I
英文摘要 II 目錄 III 圖目錄 V 表目錄 VI 第一章 序論 1 1.1 簡介 1 1.2 文獻回顧 4 1.2.1 結晶矽生長方法 4 1.2.2 Σ3晶界結構與電性特性 6 1.2.3 不同晶粒在不同過冷度的生長特性 8 1.2.4 .多晶生長之晶向控制方法 11 1.3 研究動機 13 第二章 實驗藥品器材與步驟 15 2.1 實驗藥品 15 2.1.1 矽晶生長使用藥品 15 2.1.2 太陽能電池製作使用藥品 16 2.2 器材設備 20 2.2.1多晶鑄造高溫爐 20 2.2.2 晶體生長前後處理設備 23 2.2.3 太陽能電池製作設備 25 2.2.4 量測設備 29 2.3 實驗流程 32 2.3.1 晶體生長 32 2.3.2 晶體後處理 33 2.3.3 太陽能電池製作 34 第三章 研究結果與討論 36 3.1 晶體控制方法 36 3.2 晶體生長 36 3.2.1 Casting-1晶體生長 36 3.2.2 Casting-2晶體生長 39 3.2.3 Casting-3晶體生長 42 3.2.4 Casting-4晶體生長 45 3.2.5 Casting-5晶體生長 48 3.3 EBSD 晶向分析及生長模型討論 50 3.4 EPD晶體評價 54 3.5 晶粒大小與少數載子的分布比較 58 3.6 LBIC 量子效率量測 60 第四章 結論 62 參考文獻 64 附錄 71 圖目錄 圖 1-1 光電轉換效率與少數載子壽命的關係 2 圖 1-2 不同過冷度下dendrite的生長情形 9 圖 1-3 可視化dendrite生長與其生長模型 10 圖 1-4 Dendrite casting的晶粒控制生長示意圖 11 圖 1-5 Dendrite casting的控制生長結果 12 圖 1-6 Spot cooling控制生長結果 13 圖 2-1 多晶鑄造高溫爐 21 圖 2-2 箱型高溫爐 23 圖 2-3 內緣精密切割機 24 圖 2-4 研磨拋光機 25 圖 2-5 超純水製造系統 25 圖 2-6 超音波洗淨機 26 圖 2-7 真空烘箱 26 圖 2-8 旋轉塗佈機 27 圖 2-9 紅外線快速加熱爐 27 圖 2-10 高真空射頻濺鍍系統 28 圖 2-11 管狀高溫爐 28 圖 2-12 四點探針 29 圖 2-13 金相顯微鏡 30 圖 2-14 長晶爐之熱場配置 33 圖 3-1 Casting-1縱切圖 37 圖 3-2 Casting-1橫切圖 38 圖 3-3 Csating-2熱場配置圖 39 圖 3-4 Casting-2縱切圖 40 圖 3-5 Casting-2橫切圖 41 圖 3-6 保溫棉包覆石墨外坩堝 42 圖 3-7 Csating-3熱場配置圖 43 圖 3-8 Casting-3縱切圖 43 圖 3-9 Casting-3橫切圖 44 圖 3-10 Csating-4熱場配置圖 45 圖 3-11 Casting-4縱切圖 46 圖 3-12 Casting-4橫切圖 47 圖 3-13 Casting-5縱切圖 48 圖 3-14 Casting-5橫切圖 49 圖 3-15 EPD與EBSD的對照圖 51 圖 3-16 孿生晶界高解析分析圖 52 圖 3-17 EPD與少數載子壽命分析(lifetime mapping)的對照圖 56 圖 3-18 晶粒大小分布圖 59 圖 3-19 少數載子壽命分佈圖 60 圖 3-20 EPD與量子轉換效率(LBIC)對照圖 61 表目錄 表 1-1 矽的物理性質 3 表 3-1 不同位置的缺陷密度計算 58 | |
| dc.language.iso | zh-TW | |
| dc.subject | 多晶矽 | zh_TW |
| dc.subject | 單向凝固 | zh_TW |
| dc.subject | 晶粒控制 | zh_TW |
| dc.subject | 太陽能電池 | zh_TW |
| dc.subject | grain control | en |
| dc.subject | solar cell | en |
| dc.subject | directional solidification | en |
| dc.subject | multicrystalline silicon | en |
| dc.title | 太陽能多晶矽生長之晶粒與界面控制之研究 | zh_TW |
| dc.title | Grain and solidification front control of multicrystalline silicon crystal growth for photovoltaic applications | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 97-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 何國川(Kuo-Chuan Ho),張正陽(Jenq-Yang Chang),陳啟昌(Chii-Chang Chen) | |
| dc.subject.keyword | 多晶矽,單向凝固,晶粒控制,太陽能電池, | zh_TW |
| dc.subject.keyword | multicrystalline silicon,directional solidification,grain control,solar cell, | en |
| dc.relation.page | 72 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2009-08-13 | |
| dc.contributor.author-college | 工學院 | zh_TW |
| dc.contributor.author-dept | 化學工程學研究所 | zh_TW |
| 顯示於系所單位： | 化學工程學系 | |
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