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| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.advisor | 王立民(Li-Min Wang) | |
| dc.contributor.author | Jia-Wei Huang | en |
| dc.contributor.author | 黃家瑋 | zh_TW |
| dc.date.accessioned | 2021-06-08T03:54:42Z | - |
| dc.date.copyright | 2018-08-18 | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2018-08-16 | |
| dc.identifier.citation | [1] Hall, E. H., 1879, Am. J. Math. 2, 287
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| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/21951 | - |
| dc.description.abstract | 本研究以助熔劑成長法合成單晶鉀銠氧(KxRhO2)並且用能量散射光譜儀做元素分析，計算出樣品中鉀含量x的值。我們合成出兩種不同鉀含量的樣品- K0.52RhO2、K0.42RhO2並研究其電性、磁性以及霍爾效應。我們使用X射線繞射儀來量測其c軸晶格長度，K0.52RhO2、K0.42RhO2的c軸晶格長度分別為12.26 Å與12.28 Å。
接著我們試著把KxRhO2浸在鹽酸中試著讓水分子進入RhO2層之間，試著改變其結構看是否會出現超導現象。在水分子進入結構之後，其c軸晶格常數增加為13.67 Å，其晶格常數的改變來自於水分子進入結構中，導致c軸晶格常數增加。 在電性量測過程中，我們發現了電阻率與溫度間特別的關係。在K0.52RhO2與K0.42RhO2中低溫時出現了電阻率與溫度平方關係，高溫時電阻率與溫度則呈現1.5次方關係，其轉變溫度分別為177.46 K與168.53 K；加入水分子的樣品則在低溫即出現了電阻率與溫度1.5次方關係，當高溫時則轉變為電阻率與溫度呈線性關係，此一特別的物理現象可以鍵長漲落效應解釋之。 最後我們根據期刊Phys. Rev. Lett. 116, 256601(2016) 文章其理論預期非共面的自旋會出現拓樸霍爾效應，因此我們做了K0.52RhO2單晶拓樸霍爾效應的量測與計算，並觀察到類似拓樸霍爾效應的現象。 | zh_TW |
| dc.description.abstract | We synthesised single KxRhO2 crystals with a flux growth method and determine the composition of potassium with Energy-dispersive X-ray spectroscopy (EDS). We have synthesised two samples with different composition of potassium, K0.52RhO2 and K0.42RhO2, and study the magnetotransport properties and Hall effect of samples. We measured the lattice parameter of c-axis with X-ray Diffraction (XRD), and the lattice parameters of c-axis of K0.52RhO2 and K0.42RhO2 are 12.26 Å and 12.28 Å, respectively.
Then we tried to make H2O insert into the structure of KxRhO2 and wonder whether the KxRhO2 become superconducting. The lattice parameter of c-axis increased from 12.26 Å to 13.67 Å when the water was inserted into the RhO2 layer. The increasing in parameter of c-axis is due to the insertion of H2O molecules into the KxRhO2 structure. In electrical measurements, we found a special relationship between resistivity and temperature. In K0.52RhO2 and K0.42RhO2, the resistivity ρ(T) is proportional to T2 at low temperatures and is proportional to T1.5 at high temperatures. The transition temperature of K0.52RhO2 and K0.42RhO2 are 177.46 K and 168.53 K, respectively. This special phenomenon can be explained by locally cooperative bond-length fluctuation. The resistivity of samples containing the water is found to be proportional to the T1.5 at low temperatures and be proportional to the T1 at high temperatures. Finally, based on the article of Phys. Rev. Lett. 116, 256601(2016),” Predicted Quantum Topological Hall Effect and Noncoplanar Antiferromagnetism K0.5RhO2”, which theoretically predicted that the topological hall effect can occur in non-coplanar spins, we did the measurement and calculation of topological hall effect in K0.52RhO2 single crystals. A topological-hall-effect-like phenomenon was observed. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T03:54:42Z (GMT). No. of bitstreams: 1 ntu-107-R05245014-1.pdf: 3555011 bytes, checksum: 54a3bdde80f1ea3ac9c855fc6f9d57ba (MD5) Previous issue date: 2018 | en |
| dc.description.tableofcontents | 口試委員會審定書 #
誌謝 i 中文摘要 ii ABSTRACT iii CONTENTS v LIST OF FIGURES viii LIST OF TABLES xii Chapter 1 序論 1 1.1 拓樸霍爾效應 1 1.2 文獻回顧 2 1.2.1 拓樸霍爾效應 2 1.2.2 KxRhO2文獻回顧 4 1.2.3 理論預測K0.5RhO2發生拓樸霍爾效應 6 1.3 研究動機 8 Chapter 2 理論背景與原理介紹 9 2.1 磁性介紹 9 2.1.1 鐵磁性(Ferromagnetism) 9 2.1.2 反鐵磁性(Antiferromagnetism) 9 2.1.3 順磁性(Paramagnetism) 9 2.1.4 抗磁性(Diamagnetism) 10 2.1.5 亞鐵磁性(Ferrimagnetism) 10 2.2 霍爾效應(Hall effect) 11 2.2.1 霍爾效應(Ordinary Hall effect) 11 2.2.2 異常霍爾效應(Anomalous Hall effect) 12 2.2.3 拓樸霍爾效應(Topological Hall effect) 14 2.3 電阻率與溫度次方關係 15 2.3.1 莫特絕緣體 15 2.3.2 莫特相變 16 2.3.3 locally cooperative bond-length fluctuation 16 Chapter 3 實驗方法 22 3.1 實驗流程 22 3.2 KxRhO2單晶樣品合成 23 3.2.1 氧化銠製作 23 3.2.2 製作KxRhO2單晶樣品 23 3.3 KxRhO2單晶樣品層間距離之改變 24 3.4 量測系統 26 3.4.1 XRD 26 3.4.2 EDS 28 3.5 SQUID 量測系統 31 Chapter 4 結果與討論 32 4.1 KxRhO2 x=0.52,x=0.42單晶樣品之研究 32 4.1.1 樣品結構 32 4.1.2 ρxy與磁場關係 33 4.1.3 ρxy與溫度關係 34 4.1.4 RH與溫度關係 35 4.1.5 載子濃度與溫度關係 37 4.1.6 載子遷移率與溫度關係 38 4.1.7 磁阻(MR)與磁場關係 38 4.1.8 磁阻(MR)與溫度關係 40 4.1.9 磁化強度與溫度關係 41 4.1.10 磁化強度與磁場關係 42 4.2 KxRhO2層間含水分子之特性研究 43 4.2.1 樣品結構 43 4.2.2 ρxy與磁場關係 45 4.2.3 磁阻(MR)與磁場關係 47 4.3 電阻與溫度次方關係 50 4.4 拓樸霍爾效應分析 56 Chapter 5 結論 59 REFERENCE 60 | |
| dc.language.iso | zh-TW | |
| dc.title | 鉀銠氧單晶之異常磁傳輸特性研究 | zh_TW |
| dc.title | Anomalous Magnetotransport Characteristics of
Single Crystal KxRhO2 | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 106-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 廖書賢,陳昭翰 | |
| dc.subject.keyword | 助熔劑成長法,鉀銠氧,電阻-溫度相依性,拓樸霍爾效應,非共平面自旋, | zh_TW |
| dc.subject.keyword | flux growth method,KxRhO2,topological hall effect,temperature dependence of resistivity,non-coplanar spins, | en |
| dc.relation.page | 62 | |
| dc.identifier.doi | 10.6342/NTU201803508 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2018-08-16 | |
| dc.contributor.author-college | 理學院 | zh_TW |
| dc.contributor.author-dept | 應用物理研究所 | zh_TW |
| 顯示於系所單位： | 應用物理研究所 | |
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