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| ???org.dspace.app.webui.jsptag.ItemTag.dcfield??? | Value | Language |
|---|---|---|
| dc.contributor.advisor | 管傑雄(Chieh-Hsiung Kuan) | |
| dc.contributor.author | Chen-Kai Yi | en |
| dc.contributor.author | 易振楷 | zh_TW |
| dc.date.accessioned | 2021-06-08T03:32:14Z | - |
| dc.date.copyright | 2019-08-22 | |
| dc.date.issued | 2019 | |
| dc.date.submitted | 2019-08-11 | |
| dc.identifier.citation | [1] 2016_Book_III-Nitride Ultraviolet Emitters
[2] Kneissl, M., et al. 'Advances in group III-nitride-based deep UV light-emitting diode technology.' Semiconductor Science and Technology 26.1 (2010): 014036. [3] Li, Yuan, et al. 'High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates.' Journal of Materials Chemistry C 6.42 (2018): 11255-11260. [4] Hirayama, Hideki, et al. 'Remarkable enhancement of 254‐280 nm deep ultraviolet emission from AlGaN quantum wells by using high‐quality AlN buffer on sapphire.' physica status solidi c 5.6 (2008): 2283-2285. [5] Hirayama, Hideki, et al. '222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire.' physica status solidi (a) 206.6 (2009): 1176-1182. [6] Lu, L., et al. 'Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition.' Journal of Applied Physics 104.12 (2008): 123525. [7] Shao, Yongliang, et al. 'Characterization of dislocation etch pits in HVPE-grown GaN using different wet chemical etching methods.' Journal of Alloys and Compounds 504.1 (2010): 186-191. [8] Usami, Shigeyoshi, et al. 'Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate.' Applied Physics Letters 112.18 (2018): 182106. [9] Hino, T., et al. 'Characterization of threading dislocations in GaN epitaxial layers.' Applied Physics Letters 76.23 (2000): 3421-3423. [10] Chen, Jian-Jhong, et al. 'Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates.' IEEE Photonics Technology Letters 20.13 (2008): 1193-1195. [11] Gao, Haiyong, et al. 'Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching.' Solid-State Electronics 52.6 (2008): 962-967 [12] Huang, Shih-Cheng, et al. 'Improved Output Power of 380 nm InGaN-Based LEDs Using a Heavily Mg-Doped GaN Insertion Layer Technique.' IEEE Journal of Selected Topics in Quantum Electronics 15.4 (2009): 1132-1136. [13] Shin, Hui-Youn, et al. 'Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate.' Journal of Crystal Growth 311.17 (2009): 4167-4170. [14] Feng, Z. H., et al. 'GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy.' Journal of crystal growth 272.1-4 (2004): 327-332. [15] Chakraborty, Arpan, et al. 'Nonpolar InGaN∕ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak.' Applied Physics Letters 85.22 (2004): 5143-5145. | |
| dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/21369 | - |
| dc.description.abstract | 內部量子效率(IQE)的提升對於近紫外光發光二極體(NUV-LED)之發光效率影響極為重要。目前之NUV-LED主動層材料為氮化鋁鎵，其IQE對於穿隧差排密度之敏感度較高。而其中材料晶體品質直接影響元件的內部量子效率(IQE)，因此對於材料晶體品質的分析與增進變得十分重要。
在本篇論文中，我們首先改善了用於分析晶體品質的蝕刻孔洞法(EPD)，使之能確切地計算出穿隧差排密度(TDD)，並實際應用於分析近紫外光發光二極體(NUV-LED)之緩衝層(Buffer layer)氮化鎵薄膜之缺陷密度。本研究利用圖案化藍寶石基板技術來提升磊晶晶體品質，在優化後的蝕刻孔洞法分析下，我們發現螺旋形差排與混和型差排密度，由2.09*106成功的減少至1.66*106 (cm-2)，整體減少了20.5%的缺陷密度。 該結果最終與鄭文逸同學的拉曼分析模型互相印證，成功證明利用圖案化藍寶石基板(Patterned Sapphire Substrates, PSSs) 可以大幅減少氮化鎵薄膜的穿隧差排密度(Threading Dislocation Density)以增加發光二極體主動層之磊晶品質。 | zh_TW |
| dc.description.abstract | The improvement of internal quantum efficiency (IQE) is significant for the luminous efficiency of near-ultraviolet light-emitting diodes (NUV-LEDs). Recently, the active layer material of NUV-LEDs is AlGaN, whose IQE is highly sensitive to the threading dislocation density. Since the IQE is strongly affected by the crystal quality, it is very important to improve and analyze the crystal quality of materials
In this thesis, we first modified the etch pits density (EPD) method for crystal quality analyzation, which made the calculation of the threading dislocation density (TDD) more precise. The method then directly applied to analyze the defect density of the NUV-LEDs buffer layer. In this study, we improve the crystal quality with pattern sapphire substrates, and analyze its crystal quality with the modified EPD method. The results show that the screw and mixed type dislocation density were successfully decreased from 2.09*106 to 1.66*106 (cm-2), totally 20.5% reduced. Finally, the results have compared to the investigation through Raman spectrum analyzation, which is executed by Wen-yi Zheng. The decrease of threading dislocation density of NUV-LEDs buffer layer with PSSs is cross-confirmed successfully. | en |
| dc.description.provenance | Made available in DSpace on 2021-06-08T03:32:14Z (GMT). No. of bitstreams: 1 ntu-108-R06943116-1.pdf: 2612209 bytes, checksum: cd5ae55d2ab13cf18ce60e7b62e21dc6 (MD5) Previous issue date: 2019 | en |
| dc.description.tableofcontents | 致謝 III
中文摘要 IV Abstract V 圖目錄 IX 第一章 緒論 1 1.1 前言 1 1.2 研究動機 2 1.3 論文架構 5 第二章 圖案化藍寶石基板理論基礎 6 2.1 藍寶石基板(Sapphire Substrate)介紹 6 2.2 氮化鎵(GaN) 9 第三章 實驗儀器與元件製備 10 3.1 製程儀器簡介 10 3.1.1 電漿輔助化學氣相沉積系統 （Plasma-Enhanced Chemical Vapor Deposition） 10 3.1.2 電子束蒸鍍機 (Electron Beam Evaporator） 12 3.1.3 電子束微影系統 (Electron Beam Lithography System） 13 3.1.4 反應式離子蝕刻 (Reactive Ion etching） 15 3.1.5 有機金屬化學氣象沉積 (Metal Organic Chemical Vapor Deposition) 15 3.2 量測儀器簡介 16 3.2.1 掃描式電子顯微鏡(SEM) 16 3.3 設計介紹 (本章節與鄭文逸同學合作，經指導教授同意共同撰寫) 18 3.4 樣品製備 (本章節與鄭文逸同學合作，經指導教授同意共同撰寫) 20 3.4.1 圖案化藍寶石基板製作 20 3.4.2 365nm AlGaN base UVLED結構磊晶 28 第四章 蝕刻孔洞法(EPD)優化實驗 29 4.1 文獻回顧與理論基礎 29 4.2 實驗設計與結果分析 31 4.2.1 蝕刻孔洞法實驗(第一階段) 32 4.2.2 第一階段實驗結果與分析 32 4.2.3 蝕刻孔洞法實驗(第二階段) 33 4.2.4 第二階段實驗結果與分析 34 4.3 問題探討與實驗改良 35 4.3.1 文獻回顧 35 4.3.2 蝕刻孔洞法改良(放大拍攝倍率) 36 4.3.3 疑問 37 第五章 實驗結果與分析 38 5.1 優化後的蝕刻孔洞法分析(Etch pits density) 38 5.2 結合拉曼頻譜分析 39 5.2.1 蝕刻孔洞法(Etch pits density)優點 39 5.2.2 蝕刻孔洞法(Etch pits density)結果與拉曼之比較 40 5.2.3 文獻回顧---不同型態差排之影響 40 5.2.4 螺旋差排與混和差排密度變化 42 5.2.5 圖案畫藍寶石基板對於內部量子效率的提升 44 5.3 設計封裝365nm LED之圖案化藍寶石基板 (本章節與鄭文逸同學合作，經指導教授同意共同撰寫) 44 5.3.1 第一道光罩---Mesa isolation 45 5.3.2 圖案設計介紹 46 5.3.3 圖案大小與Alignment mark設計 46 5.3.4 光罩對位問題 47 第六章 結論 48 參考文獻 49 | |
| dc.language.iso | zh-TW | |
| dc.title | 利用蝕刻孔洞法研究圖案化藍寶石基板上近紫外光
發光二極體的內部量子效率 | zh_TW |
| dc.title | Investigation of internal quantum efficiency in near-ultraviolet light-emitting diodes on patterned-sapphire substrates by the etch-pits method | en |
| dc.type | Thesis | |
| dc.date.schoolyear | 107-2 | |
| dc.description.degree | 碩士 | |
| dc.contributor.oralexamcommittee | 蘇文生(Vin-Cent Su),孫允武(Yuen-Wuu Suen),孫建文(Kien-Wen Sun),蘇炎坤(Yan-Kuin Su) | |
| dc.subject.keyword | 內部量子效率,氮化鎵,圖案化藍寶石基板,蝕刻孔洞法,近紫外光發光二極體, | zh_TW |
| dc.subject.keyword | Internal quantum efficiency,gallium nitride,patterned sapphire substrate,etched pits density,near-ultraviolet light-emitting diode, | en |
| dc.relation.page | 50 | |
| dc.identifier.doi | 10.6342/NTU201903041 | |
| dc.rights.note | 未授權 | |
| dc.date.accepted | 2019-08-12 | |
| dc.contributor.author-college | 電機資訊學院 | zh_TW |
| dc.contributor.author-dept | 電子工程學研究所 | zh_TW |
| Appears in Collections: | 電子工程學研究所 | |
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| File | Size | Format | |
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| ntu-108-1.pdf Restricted Access | 2.55 MB | Adobe PDF |
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