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完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.advisor | 吳肇欣(Chao-Hsin Wu) | |
dc.contributor.author | YU-EN JENG | en |
dc.contributor.author | 鄭宇恩 | zh_TW |
dc.date.accessioned | 2021-06-08T03:26:48Z | - |
dc.date.copyright | 2020-01-21 | |
dc.date.issued | 2019 | |
dc.date.submitted | 2020-01-17 | |
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Salahuddin, S. and S. Datta, Use of negative capacitance to provide voltage amplification for low power nanoscale devices. Nano letters, 2008. 8(2): p. 405- p.410. 9. Islam Khan, A., et al., Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures. Applied Physics Letters, 2011. 99(11): p. 113501. 10. Lomenzo, P.D., et al., Mixed Al and Si doping in ferroelectric HfO2 thin films. Applied Physics Letters, 2015. 107(24): p. 242903. 11. 陳露妮 and 陳英忠, 製程參數對Al/(Bi4Ti3O12+V2O5 )/Ba(Zr0.1Ti0.9)O3/Si 結構電特性之影響及其於非揮發性記憶元件之應用, in 電機工程學系研究所. 2006, 中山大學. 12. Kalinin, S.V., et al., Local polarization dynamics in ferroelectric materials. Reports on Progress in Physics, 2010. 73(5): p. 056502. 13. Wang, S. and L. Chen, Interfacial transport in lithium-ion conductors. Chinese Physics B, 2015. 25(1): p. 018202. 14. López-Juárez, R., F. González, and M.-E. Villafuerte-Castrejón, Lead-free ferroelectric ceramics with perovskite structure. 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dc.identifier.uri | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/21086 | - |
dc.description.abstract | 從摩爾定律開始探討,並且快速回顧半導體過去多年來的發展,並利用intel技術節點的演進,探討科學家們於每個技術節點上所遇到的問題以及克服之方法,並簡述未來可能應用之半導體材料及技術,包括二維材料及負電容電晶體。
本論文第一部分簡介鐵電材料的基本特性與電容放大的物理機制與原理,並利用 high-k 材料氧化鉿搭配鐵電材料氧化鋯的形式製作出金屬-絕緣體-金屬電容元件,利用快速電壓-電流量測分析與電容量測,並且成功驗證鐵電特性與電容放大特性。 第二部分以網路分析儀量測並計算鐵電電容在高頻時的的電容值,觀察鐵電材料的電容值與電容放大特性在高頻時的現象,隨後利用不同頻率與不同偏壓探討鐵電的頻率響應,並殘餘極化隨頻率的變化,最後利用朗道理論進行朗道常數的參數萃取,並利用其探討在高頻時的鐵電特性與電容放大之關係,與鐵電材料在時域上的現象,對鐵電材料進行暫態脈衝分析,可得一類似 RLC 震盪,並利用等效的RLC 電路,並萃取其等效電感,。 第三部分,首先簡述有晶種層之鐵電材料有較好的晶格結構,使之能有更好的薄膜、鐵電特性以及殘餘極化強度,並比較不同厚度與成長條件的鐵電材料氧化鉻與 High-k 電容組合造成電容放大倍率之差異,並觀察同一元件中,不同層的分別電容值,更直接的驗證電容放大的特性,最後利用不同偏壓與不同頻率探討鐵電的頻率響應,並與前兩章作比較其鐵電材料的殘餘極化在高頻時的差異。 | zh_TW |
dc.description.abstract | Starting from Moore's Law, a brief review of the development of semiconductors technology in recent years. From the development of Intel technology nodes, the problems of the scientists at the individual technology nodes and the odds they overcame are discussed. In addition, we briefly describe semiconductor materials and technologies that may be applied in the future, including negative capacitance transistors.
The first part of this thesis briefly introduces the ferroelectric properties and physical mechanism of capacitance enlargement. The high-k material HfO2 was combined with the ferroelectric material ZrO2 to form a negative capacitance device, and use fast I-V measurement and C-V measurement to verify the ferroelectric properties and capacitance amplification characteristics. In the second part of this thesis, RF characteristic of ferroelectric capacitor was used to investigate ferroelectric properties and capacitance amplification at high frequency. And transient measurement of ferroelectric material can obtain a RLC-like oscillation and extract the equivalent inductance. Then, the frequency response of ferroelectrics was discussed by using different bias voltages and different frequencies. We used Landau theory to extra Landau coefficient, and the relationship between ferroelectric characteristics and capacitance amplification at high frequencies is discussed. In the third part, we first briefly describe that the ferroelectric material with HfO2 seed layer have better structure so that it can have better ferroelectric properties and capacitance amplification. By observing the capacitance of different layers in the same component, more directly verify the characteristics of capacitance amplification. Finally, frequency response of ferroelectrics was discussed by using different bias voltages and different frequencies and compare with the previous two chapters, the difference of the polarization at high frequencies. | en |
dc.description.provenance | Made available in DSpace on 2021-06-08T03:26:48Z (GMT). No. of bitstreams: 1 ntu-108-R06941070-1.pdf: 4588611 bytes, checksum: 2204e75ce79c91f240c25180adbb57b7 (MD5) Previous issue date: 2019 | en |
dc.description.tableofcontents | 口試委員審定書 I
誌謝 II 中文摘要 IV ABSTRACT V 目錄 VII 圖目錄 IX 第1章 緒論 1 1.1 摩爾定律 1 1.2 負電容電晶體 6 1.3 論文概述 9 第2章 氧化鋯鐵電材料之電容放大電特性分析 10 2.1 背景介紹 10 2.1介電極化與鐵電材料簡介 10 2.1.2鐵電材料之電容放大特性 14 2.2 鐵電材料與原子層沉積 17 2.3 金屬-絕緣體-金屬電容元件製作流程 19 2.4 金屬-絕緣體-金屬電容元件電特性分析 21 2.4.1電容元件之快速電壓-電流量測分析 21 2.4.2 電容元件之電容特性分析 25 2.5 本章結論與未來研究方向 28 第3章 鐵電材料的高頻量測分析與頻率響應 29 3.1 前言 29 3.2 金屬-絕緣體-金屬電容元件高頻量測分析 30 3.3 金屬-絕緣體-金屬電容元件鐵電遲滯曲線與頻率響應 34 3.3.1 PUND量測 34 3.3.2金屬-絕緣體-金屬電容元件在不同頻率下之鐵電遲滯曲線 36 3.3.3金屬-絕緣體-金屬電容元件在不同電壓下之鐵電遲滯曲線 40 3.4 鐵電材料之朗道係數參數萃取 42 3.5 金屬-絕緣體-金屬電容元件暫態脈衝分析 47 3.6 本章結論與未來發展 52 第4章 鐵電材料運用氧化鉿晶種層電特性分析 53 4.1前言 53 4.2 鐵電材料運用氧化鉿晶種層之電容元件製作流程 54 4.3 鐵電材料運用氧化鉿晶種層之電容元件電特性分析 56 4.3.1電容元件之快速電壓-電流量測分析 56 4.3.2電容元件之電容量測分析 59 4.4 鐵電材料運用氧化鉿晶種層之電容元件電特性分析鐵電遲滯曲線與頻率響應 63 第5章 結論 68 參考文獻 70 | |
dc.language.iso | zh-TW | |
dc.title | 鐵電材料電容放大與高頻頻率響應之研究 | zh_TW |
dc.title | Investigation of Ferroelectric Material Capacitance Enlargement and Frequency Response | en |
dc.type | Thesis | |
dc.date.schoolyear | 108-1 | |
dc.description.degree | 碩士 | |
dc.contributor.oralexamcommittee | 謝宗霖,陳敏璋,李峻霣 | |
dc.subject.keyword | 鐵電材料,負電容,氧化鋯,氧化鉿,頻率響應,電容放大, | zh_TW |
dc.subject.keyword | ferroelectric material,negative capacitance,HfO2,ZrO2,frequency response,capacitance enhancement, | en |
dc.relation.page | 74 | |
dc.identifier.doi | 10.6342/NTU202000160 | |
dc.rights.note | 未授權 | |
dc.date.accepted | 2020-01-17 | |
dc.contributor.author-college | 電機資訊學院 | zh_TW |
dc.contributor.author-dept | 光電工程學研究所 | zh_TW |
顯示於系所單位: | 光電工程學研究所 |
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