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標題: | 銦摻雜量子井結構對850奈米垂直共振腔面射型雷射之分析研究 The Investigation of Indium (In) Composition Quantum Well Structure on 850 nm Vertical-Cavity Surface-Emitting Laser |
作者: | I-Chien Chen 陳怡蒨 |
指導教授: | 吳肇欣(Chao-Hsin Wu) |
關鍵字: | 垂直共振腔面射型雷射,量子井結構,銦(In)摻雜,高頻特性,小訊號模型, Vertical Cavity Surface Emitting Laser (VCSEL),Quantum well structure,Indium (In) doping,RF characteristic,Small signal model, |
出版年 : | 2020 |
學位: | 碩士 |
摘要: | 本論文以探討有無摻雜銦(In)之量子井結構的短波長 850 奈米(nm)垂直共振腔面射型雷射(Vertical Cavity Surface Emitting Laser)的特性分析與討論,包含磊晶結構與量子井結構設計、製程步驟、變溫直流特性分析、變溫高頻特性量測、小訊號模型分析。 第一章我們會先介紹光通訊的優勢及垂直共振腔面射型雷射的優勢和未來展望,並探討 850 nm垂直共振腔面射型雷射在光通訊上的應用和我們的研究動機。 第二章會介紹我們的垂直共振腔面射型雷射之基本原理,並探討磊晶結構與量子井結構之設計、製程步驟、室溫下之直流特性分析。磊晶結構我們會設計兩種不同的量子井結構並會以軟體PIS3D來分析有無摻雜銦之量子井結構在微分增益方面的模擬結果做討論,再來會介紹垂直共振腔面射型雷射的製程步驟,最後會將製作出來的元件做室溫下的直流特性量測,探討量子井結構為GaAs/AlGaAs光孔直徑5.3 um和6.8 um與量子井結構為InGaAs/AlGaAs光孔直徑4.6 um和6 um之垂直共振腔面射型雷射元件在25°C下的直流特性,包含 L-I-V曲線、L-J-V曲線和光頻譜分析,並探討不同量子井結構的垂直共振腔面射型雷射元件在室溫下之直流特性的比較。 第三章我們將探討量子井結構為GaAs/AlGaAs光孔直徑5.3 um和6.8 um與量子井結構為InGaAs/AlGaAs光孔直徑4.6 um和6 um之垂直共振腔面射型雷射元件在25°C下的高頻特性,以及建立垂直共振腔面射型雷射的小訊號模型,由寄生電路模型和雷射本質物理模型組成。我們會先介紹電路模型中電路參數和萃取方法,再由速率方程式推導出雷射本質轉移函數,並了解本質函數中物理參數的意義及萃取方法,並探討室溫下的小訊號分析。 第四章我們將探討量子井結構為GaAs/AlGaAs光孔直徑5.3 um和6.8 um與量子井結構為InGaAs/AlGaAs光孔直徑4.6 um和6 um之垂直共振腔面射型雷射元件在變溫下(25°C、70°C、85°C)下的直流和高頻特性,以及變溫下的小訊號分析,最後探討如何優化量子井結構才能達到更快的調變速度。 The thesis focus on discussion of the characterization of the 850 nm Vertical Cavity Surface Emitting Laser with a quantum well structure with undoped and doped indium (In), including the layer structure, quantum well structure design, process flow, high temperature optical and electrical DC characterization, high temperature optical modulation characterization, small-signal model establishment and analysis. In the Chapter one, the advantages of the optical communication and the future prospects of VCSEL will be introduced, then we discuss the application of the 850 nm VCSEL and the research motivation. In the Chapter two, first we will discuss the fundamental physics of the VCSEL. Then, we research the layer structure, quantum well structure design, process flow, and room temperature DC characterization. We focus on the quantum well design of the layer structure. We design two different quantum well structures and use the software PIS3D to analyze the simulation results of the quantum well structure with undoped and doped indium in terms of differential gain, then introduce the fabrication of the VCSEL. In the last, we measure the DC characteristic of the fabricated VCSELs with the quantum well structure of GaAs/AlGaAs and aperture diameters of 5.3 um and 6.8 um and quantum well structure of InGaAs/AlGaAs aperture diameters of 4.6 um and 6 um at 25°C, and analyze the L-I-V curve, L-J-V cure, optical spectrum. We focus on discussion the comparison of the DC characteristics of VCSELs with the different quantum well structures at room temperature. In the Chapter three, we will measure the RF characteristic of the fabricated VCSELs with the quantum well structure of GaAs/AlGaAs and aperture diameters of 5.3 um and 6.8 um and quantum well structure of InGaAs/AlGaAs aperture diameters of 4.6 um and 6 um at 25°C. Then, we establish the small-signal model, including the parasitic electrical circuit model and physical intrinsic laser model. The electrical parameters in the circuit and the extraction method will be introduced. Then we derivate the laser IV intrinsic transfer function by rate equation, and recognize the meaning of the physical parameters and extraction method. Afterwards, we dicuss the analysis of small signal of VCSELs at room temperature. In the Chapter four, we will analyze the DC and RF characteristic of the VCSELs with the quantum well structure of GaAs/AlGaAs and aperture diameters of 5.3 um and 6.8 um and quantum well structure of InGaAs/AlGaAs aperture diameters of 4.6 um and 6 um under variable temperature (25°C, 70°C, 85°C). At last, the small-signal parameters of the VCSELs with the quantum well structure of GaAs/AlGaAs and aperture diameters of 5.3 um and 6.8 um and quantum well structure of InGaAs/AlGaAs aperture diameters of 4.6 um and 6 um at different injection current under variable temperature (25°C, 70°C, 85°C) are extracted. Then, we discuss how to improve the modulation speed by optimization of the quantum well structure. |
URI: | http://tdr.lib.ntu.edu.tw/jspui/handle/123456789/19110 |
DOI: | 10.6342/NTU202003819 |
全文授權: | 未授權 |
顯示於系所單位: | 光電工程學研究所 |
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